JPH06338221A - Dielectric ceramic composition for high frequency - Google Patents

Dielectric ceramic composition for high frequency

Info

Publication number
JPH06338221A
JPH06338221A JP5129546A JP12954693A JPH06338221A JP H06338221 A JPH06338221 A JP H06338221A JP 5129546 A JP5129546 A JP 5129546A JP 12954693 A JP12954693 A JP 12954693A JP H06338221 A JPH06338221 A JP H06338221A
Authority
JP
Japan
Prior art keywords
value
dielectric
dielectric ceramic
ceramic composition
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5129546A
Other languages
Japanese (ja)
Inventor
Yoshihiro Okawa
善裕 大川
Seiichiro Hirahara
誠一郎 平原
Shigesato Koyasu
茂吏 子安
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP5129546A priority Critical patent/JPH06338221A/en
Publication of JPH06338221A publication Critical patent/JPH06338221A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To provide a dielectric ceramic composition having a high dielectric constant and a high Q value in a high frequency region. CONSTITUTION:A dielectric ceramic composition is composite oxide including Ba, Zn, Mg, Nb and W. The composition satisfies a composition formula in molar ratio of the metal elements expressed by aBaO.bZnO.cMgO-dNb2 O5.eWO3, wherein 0.40<=(a)<=0.70, 0<(b)<=0.30, 0<(c)<=0.35, 0<(d)<=0.30, and 0<(e)<=0.35.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、マイクロ波、ミリ波等
の高周波領域において高い誘電率及び高いQ値を有する
新規な誘電体磁器組成物に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a novel dielectric ceramic composition having a high dielectric constant and a high Q value in a high frequency region such as microwave and millimeter wave.

【0002】[0002]

【従来技術】マイクロ波やミリ波等の高周波領域におい
て、誘電体磁器は誘電体共振器やMIC用誘電体基板等
に広く利用されている。
2. Description of the Related Art Dielectric ceramics are widely used for dielectric resonators, dielectric substrates for MICs, etc. in a high frequency range such as microwaves and millimeter waves.

【0003】従来より、この種の誘電体磁器としては、
例えばBaO−ZnO−Nb系材料、Sr(Zr,N
b,Ta)系材料、BaZnTa−CaTiO3 系材料
等が知られている。
Conventionally, as a dielectric ceramic of this type,
For example, BaO—ZnO—Nb based material, Sr (Zr, N
b, Ta) based materials, BaZnTa—CaTiO 3 based materials and the like are known.

【0004】上記材料では、誘電率が20〜40、1G
Hzに換算したQ値が10000〜40000および共
振周波数の温度係数(τf)の絶対値が20〜100p
pm/℃付近の特性を有している。
The above materials have a dielectric constant of 20-40, 1G.
The Q value converted to Hz is 10,000 to 40,000 and the absolute value of the temperature coefficient (τf) of the resonance frequency is 20 to 100 p.
It has characteristics near pm / ° C.

【0005】[0005]

【発明が解決しようとする問題点】しかしながら、近年
では使用機器の多用化により使用周波数がより高くな
り、このような高周波数領域での誘電特性、特に高Q値
が要求されるようになっているが、前述したような従来
の誘電体材料ではQ値が10000〜40000と未だ
低く、実用的レベルの高Q値が得られていないのが現状
であった。
However, in recent years, the frequency of use has become higher due to the diversification of equipment used, and dielectric characteristics, particularly high Q value, in such a high frequency region have been required. However, in the conventional dielectric materials as described above, the Q value is still as low as 10,000 to 40,000, and the high Q value of a practical level has not been obtained at present.

【0006】従って、本発明は高周波領域において高い
Q値を有し、共振周波数の温度係数(τf)の制御に優
れた新規な誘電体磁器組成物を提供することを目的とす
るものである。
Therefore, an object of the present invention is to provide a novel dielectric ceramic composition having a high Q value in a high frequency region and excellent in controlling the temperature coefficient (τf) of the resonance frequency.

【0007】[0007]

【問題点を解決するための手段】本発明者等は、上記問
題点に対して検討を加えた結果、モル比による組成式を
aBaO・bZnO・cMgO・dNb2 5 ・eWO
3 と表わした時に、a,b,c,d,eを所定値に設定
すると、優れた誘電特性が得られることを知見し本発明
に至った。
The present inventors have [Problems To achieve the ## result of adding considered for the problems, the molar aBaO · bZnO · cMgO · dNb 2 O 5 · the composition formula by ratio eWO
The inventors of the present invention found that excellent dielectric properties can be obtained by setting a, b, c, d, and e to predetermined values when expressed as 3 .

【0008】即ち、本発明の誘電体磁器組成物は、B
a、Zn、Mg、Nb、Wを含有する複合酸化物であっ
て、これらの金属元素のモル比による組成式をaBaO
・bZnO・cMgO・dNb2 5 ・eWO3 と表し
た時、前記a,b,c,d,eが0.40≦a≦0.7
0、0<b≦0.30、0<c≦0.35、0<d≦
0.30、0<e≦0.35、a+b+c+d+e=
1.00を満足する組成物である。
That is, the dielectric ceramic composition of the present invention comprises B
It is a composite oxide containing a, Zn, Mg, Nb, and W, and the composition formula based on the molar ratio of these metal elements is aBaO.
- when expressed as bZnO · cMgO · dNb 2 O 5 · eWO 3, wherein a, b, c, d, e is 0.40 ≦ a ≦ 0.7
0, 0 <b ≦ 0.30, 0 <c ≦ 0.35, 0 <d ≦
0.30, 0 <e ≦ 0.35, a + b + c + d + e =
It is a composition satisfying 1.00.

【0009】本発明の誘電体磁器組成物において、Ba
Oのモル比を0.40≦a≦0.70に設定したのは、
aが0.40よりも小さい場合にはQ値が低下し、0.
70よりも大きい場合には焼結が困難となる傾向にある
からである。特に、0.43≦a≦0.67とすること
が好ましい。
In the dielectric ceramic composition of the present invention, Ba
The molar ratio of O is set to 0.40 ≦ a ≦ 0.70 because
When a is smaller than 0.40, the Q value decreases, and 0.
This is because if it is larger than 70, sintering tends to be difficult. In particular, it is preferable that 0.43 ≦ a ≦ 0.67.

【0010】また、ZnOのモル比を0<b≦0.30
としたのは、bが0の場合にはQ値が低下するからであ
り、0.30より大きい場合にはQ値が低下し、焼結が
困難となるからである。特に、0.02≦b≦0.27
とすることが好ましい。
Further, the molar ratio of ZnO is 0 <b ≦ 0.30.
The reason is that, when b is 0, the Q value decreases, and when it is larger than 0.30, the Q value decreases and it becomes difficult to sinter. In particular, 0.02 ≦ b ≦ 0.27
It is preferable that

【0011】MgOのモル比を0<c≦0.35とした
のは、cが0の場合にはQ値が低下するからであり、
0.35より大きい場合には、Q値が低下し、焼結が困
難となるからである。特に、0.025≦c≦0.32
とすることが好ましい。
The reason for setting the molar ratio of MgO to 0 <c ≦ 0.35 is that when c is 0, the Q value decreases.
This is because if it is larger than 0.35, the Q value decreases and it becomes difficult to sinter. In particular, 0.025 ≦ c ≦ 0.32
It is preferable that

【0012】Nb2 5 のモル比を0<d≦0.30と
したのは、dが0の場合にはQ値が低下するからであ
り、0.30より大きい場合にはQ値が低下し、焼結が
困難となるからである。特に0.02≦d≦0.27と
することが好ましい。
The reason for setting the molar ratio of Nb 2 O 5 to 0 <d ≦ 0.30 is that the Q value decreases when d is 0, and when the d value is larger than 0.30, the Q value becomes smaller. This is because it becomes low and sintering becomes difficult. It is particularly preferable to set 0.02 ≦ d ≦ 0.27.

【0013】WO3 のモル比を0<e≦0.35とした
のは、eが0の場合にはQ値が低下するからであり、
0.35より大きい場合にはQ値が低下し、焼結が困難
となるからである。特に0.005≦e≦0.32とす
ることが好ましい。
The reason for setting the WO 3 molar ratio to 0 <e ≦ 0.35 is that the Q value decreases when e is 0.
This is because if it is larger than 0.35, the Q value is lowered and it becomes difficult to sinter. It is particularly preferable to set 0.005 ≦ e ≦ 0.32.

【0014】また、本発明の誘電体材料は、Ba、Z
n、Mg、Nb、Wを含有する複合酸化物であり、主に
ペロブスカイト型結晶相からなるものであって、他にペ
ロブスカイト型結晶相以外のものを含んでも良い。この
ような結晶を有する材料はそれ自体焼結体等の多結晶体
でもあるいは単結晶体のいずれの形態でも良い。
The dielectric material of the present invention is made of Ba, Z
It is a complex oxide containing n, Mg, Nb, and W, and is mainly composed of a perovskite type crystal phase, and may contain other than the perovskite type crystal phase. The material having such a crystal may itself be a polycrystal such as a sintered body or a single crystal.

【0015】本発明に基づき磁器を作成する方法として
は、例えばBa、Zn、Mg、Nb、Wの酸化物あるい
は焼成により酸化物を生成する炭酸塩、硝酸塩等の金属
塩を原料として用い、これらを前述した範囲になるよう
に秤量した後、ボールミルで湿式粉砕し、脱水乾燥す
る。この後、混合物を500〜1500℃で0.1〜1
00時間仮焼処理し、仮焼物をボールミルに入れ,溶媒
および有機バインダーとともに混合粉砕し、造粒あるい
は整粒する。そして、この仮焼粉末を、例えば、所定の
圧力でプレス成形し所定の形状に成形し、大気中におい
て1300〜1750℃で0.1〜200時間焼成する
ことにより相対密度90%以上の誘電体磁器を得ること
ができる。
As a method for producing a porcelain based on the present invention, for example, an oxide of Ba, Zn, Mg, Nb, W or a metal salt such as a carbonate or a nitrate which produces an oxide by firing is used as a raw material. Is weighed so as to fall within the above-mentioned range, wet-milled with a ball mill, and dehydrated and dried. After this, the mixture is heated at 500-1500 ° C. for 0.1-1.
After calcining for 00 hours, the calcined product is placed in a ball mill, mixed and pulverized with a solvent and an organic binder, and granulated or sized. Then, the calcinated powder is press-molded at a predetermined pressure to have a predetermined shape and fired in the atmosphere at 1300 to 1750 ° C. for 0.1 to 200 hours to obtain a dielectric having a relative density of 90% or more. You can get porcelain.

【0016】また、Ba、Zn、Nbの酸化物あるいは
焼成により酸化物を生成する炭酸塩、硝酸塩等の金属塩
と、Ba、Mg、Wの酸化物あるいは焼成により酸化物
を生成する炭酸塩、硝酸塩等の金属塩とを上記した組成
となるように別々に秤量し、さらにボールミルでの湿式
粉砕、脱水乾燥、500〜1500℃で0.1〜100
時間の仮焼処理をそれぞれ別個に行い、それぞれの化合
物をボールミルに同時に入れ、溶媒および有機バインダ
ーとともに混合粉砕する。後の工程は上記と同様の方法
を採ることによっても、本発明の誘電体磁器組成物を得
ることができる。
In addition, oxides of Ba, Zn, Nb or metal salts such as carbonates and nitrates that produce oxides by firing, oxides of Ba, Mg, W or carbonates that produce oxides by firing, Metal salts such as nitrates are separately weighed so as to have the above composition, and further wet-milled in a ball mill, dehydrated and dried, and 0.1 to 100 at 500 to 1500 ° C.
Temporal calcination treatments are performed separately, and the respective compounds are simultaneously put into a ball mill and mixed and pulverized with a solvent and an organic binder. The dielectric ceramic composition of the present invention can also be obtained by adopting the same method as the above in the subsequent steps.

【0017】[0017]

【実施例】以下、本発明を次の実施例で説明する。The present invention will be described in the following examples.

【0018】原料として純度99%以上のBaCO3
ZnO、MgCO3 、Nb2 5 およびWO3 の粉末を
用いて、これらを表1に示す割合に秤量し、これをゴム
で内張りしたボールミルに水と共に入れ、湿式混合し
た。次いで、この混合物を脱水、乾燥した後、1200
℃で2時間仮焼し、当該仮焼物をボールミルに水、有機
バインダーを入れ湿式粉砕した。
BaCO 3 having a purity of 99% or more as a raw material,
Powders of ZnO, MgCO 3 , Nb 2 O 5 and WO 3 were used and weighed in the proportions shown in Table 1 and put into a ball mill lined with rubber together with water and wet mixed. Then, the mixture is dehydrated and dried, and then 1200
It was calcined for 2 hours at 0 ° C., and the calcined product was wet-ground by adding water and an organic binder to a ball mill.

【0019】その後、この粉砕物を乾燥した後、50番
メッシュの網を通して造粒し、得られた粉末を1ton
/cm2 の圧力で12mmφ×8mmの寸法からなる円
板に成形した。更に、この円板を1400〜1650℃
×6時間の条件で焼成して磁器試料を得た。この磁器試
料を加工して8mmφ×5mmの寸法からなる円板を得
た。
Thereafter, the pulverized product was dried and then granulated through a mesh of No. 50 mesh to obtain 1 ton of the obtained powder.
A disk having a size of 12 mmφ × 8 mm was formed at a pressure of / cm 2 . Furthermore, this disk is 1400 to 1650 ℃
It was fired under the condition of × 6 hours to obtain a porcelain sample. This porcelain sample was processed to obtain a disk having a size of 8 mmφ × 5 mm.

【0020】かくして得られた磁器試料について、周波
数7〜12GHzにおける比誘電率(εr),Q値を誘
電体共振器法にて測定し、また25℃から85℃までの
温度範囲における共振周波数の温度変化率から共振周波
数の温度係数(τf)を計算した。Q値はマイクロ波誘
電体において一般に成立するQ値×測定周波数f=一定
の関係から1GHzでのQ値に換算した。それらの結果
を表1に示した。
With respect to the thus obtained porcelain sample, the relative permittivity (εr) and Q value at a frequency of 7 to 12 GHz were measured by the dielectric resonator method, and the resonance frequency in the temperature range from 25 ° C to 85 ° C was measured. The temperature coefficient (τf) of the resonance frequency was calculated from the temperature change rate. The Q value was converted into the Q value at 1 GHz from the relationship of Q value generally established in the microwave dielectric × measurement frequency f = constant. The results are shown in Table 1.

【0021】[0021]

【表1】 [Table 1]

【0022】表1によれば、配合組成が本発明の範囲を
逸脱する試料No.15〜24はQ値が1000以下あ
るいは焼結不良を生じた。これに対して、本発明の試料
は比誘電率15〜40、Q値45000以上、共振周波
数の温度係数が絶対値で36.8ppm/℃以下が達成
された。しかも共振周波数の温度係数が0の値(試料N
o.2)が得られ、本発明の誘電体磁器の温度係数を0付
近で調製することが容易であり、例えば、誘電体共振器
用の誘電体磁器として使用した場合に優れた特性を有す
ることが判る。
According to Table 1, the sample No. whose compounding composition deviates from the scope of the present invention. In Nos. 15 to 24, the Q value was 1000 or less, or sintering failure occurred. On the other hand, the sample of the present invention achieved a relative dielectric constant of 15 to 40, a Q value of 45,000 or more, and a temperature coefficient of resonance frequency of 36.8 ppm / ° C. or less in absolute value. Moreover, the temperature coefficient of the resonance frequency is 0 (Sample N
o.2) is obtained, and it is easy to adjust the temperature coefficient of the dielectric porcelain of the present invention near 0, and for example, it has excellent characteristics when used as a dielectric porcelain for a dielectric resonator. I understand.

【0023】尚、本発明の磁器組成物に、Ta2 5
の他の材料を添加しても良い。また、表1において焼結
不良とはクラック,変形,未焼結,蒸発,その他の焼結
不良を含む。
Incidentally, other materials such as Ta 2 O 5 may be added to the porcelain composition of the present invention. Further, in Table 1, defective sintering includes cracks, deformation, unsintered, evaporation, and other defective sintering.

【0024】[0024]

【発明の効果】以上詳述した通り、本発明によれば、B
a、Zn、Mg、Nb、Wを含有する複合酸化物であっ
て、これらの金属元素のモル比による組成式をaBaO
・bZnO・cMgO・dNb2 5 ・eWO3 と表し
た時、a,b,c,d,eを所定値とすることにより、
高周波領域において高い誘電率およびQ値を得ることが
できる。それにより、マイクロ波やミリ波領域において
使用される共振器用材料やMIC用誘電体基板材料,電
子部品等に充分適用することができる。
As described above in detail, according to the present invention, B
It is a composite oxide containing a, Zn, Mg, Nb, and W, and the composition formula based on the molar ratio of these metal elements is aBaO.
- when expressed as bZnO · cMgO · dNb 2 O 5 · eWO 3, a, b, c, d, by the e with a predetermined value,
A high dielectric constant and Q value can be obtained in a high frequency region. As a result, it can be sufficiently applied to resonator materials used in the microwave and millimeter wave regions, dielectric substrate materials for MIC, electronic parts, and the like.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】Ba、Zn、Mg、Nb、Wを含有する複
合酸化物であって、これらの金属元素のモル比による組
成式をaBaO・bZnO・cMgO・dNb2 5
eWO3 と表した時、前記a,b,c,d,eが 0.40≦a≦0.70 0 <b≦0.30 0 <c≦0.35 0 <d≦0.30 0 <e≦0.35 a+b+c+d+e=1.00 を満足することを特徴とする高周波用誘電体磁器組成
物。
1. A Ba, Zn, Mg, Nb, a composite oxide containing W, composition formula by molar ratio aBaO · bZnO · cMgO · dNb 2 O 5 · of these metal elements
When expressed as eWO 3 , a, b, c, d, and e are 0.40 ≦ a ≦ 0.70 0 <b ≦ 0.30 0 <c ≦ 0.35 0 <d ≦ 0.30 0 < e ≦ 0.35 a + b + c + d + e = 1.00 is satisfied, the dielectric ceramic composition for high frequencies.
JP5129546A 1993-05-31 1993-05-31 Dielectric ceramic composition for high frequency Pending JPH06338221A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5129546A JPH06338221A (en) 1993-05-31 1993-05-31 Dielectric ceramic composition for high frequency

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5129546A JPH06338221A (en) 1993-05-31 1993-05-31 Dielectric ceramic composition for high frequency

Publications (1)

Publication Number Publication Date
JPH06338221A true JPH06338221A (en) 1994-12-06

Family

ID=15012190

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JPH06338221A (en)

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005272248A (en) * 2004-03-25 2005-10-06 Tdk Corp Dielectric ceramic composition, method for producing the same, and dielectric resonator
EP3016111A1 (en) * 2014-10-27 2016-05-04 TDK Corporation Dielectric composition and electronic component
CN105541299A (en) * 2014-10-27 2016-05-04 Tdk株式会社 Dielectric composition and electronic component
JP2016084268A (en) * 2014-10-27 2016-05-19 Tdk株式会社 Dielectric composition and electronic component
US9567263B2 (en) 2014-10-27 2017-02-14 Tdk Corporation Dielectric composition and electronic component
JP2020161625A (en) * 2019-03-26 2020-10-01 Tdk株式会社 Dielectric film and electronic component
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