JPS6319630A - Optical switch - Google Patents

Optical switch

Info

Publication number
JPS6319630A
JPS6319630A JP16362286A JP16362286A JPS6319630A JP S6319630 A JPS6319630 A JP S6319630A JP 16362286 A JP16362286 A JP 16362286A JP 16362286 A JP16362286 A JP 16362286A JP S6319630 A JPS6319630 A JP S6319630A
Authority
JP
Japan
Prior art keywords
optical
refractive index
optical waveguide
optical branching
light wave
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16362286A
Other languages
Japanese (ja)
Inventor
Hiroaki Inoue
宏明 井上
Hiroyoshi Matsumura
宏善 松村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP16362286A priority Critical patent/JPS6319630A/en
Publication of JPS6319630A publication Critical patent/JPS6319630A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To improve quenching characteristics and to facilitate manufacture by providing a refractive index variation part on at least one of both sides of an optical branching part. CONSTITUTION:When the refractive index of the refractive index variation part 4 is decreased, a light wave incident on the optical branching part 5 from an optical waveguide 2 or 3 travels straight and is projected on an optical waveguide 8 or 7. The optical branching part 5 has the refractive index variation part 4, so the light wave incident from the optical waveguide 2 or 3 advances in a beeline without spreading in this area nor leaking to the optical waveguides 7 and 8, so the quenching characteristics are improved. Further, when the light wave incident from the optical waveguide 2 or 3 is reflected by the optical branching part 5 and projected on the optical waveguide 7 or 8, deterioration in quenching ratio is prevented by increasing the width of the optical branching part 4 and the width of the refractive index variation part 6. Consequently, an optical branching structure is obtained which has an excellent quenching ratio and is easily manufactured.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は少なくとも2本の光導波路による交差型光スイ
ッチに係り、特に良好な消光比を得ることが出き1作製
が容易な光分岐部構造に関する。
[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a crossing type optical switch using at least two optical waveguides, and particularly relates to an optical branching section that can obtain a good extinction ratio and is easy to manufacture. Regarding structure.

〔従来の技術〕[Conventional technology]

従来の交差型光スイッチは、井上他、昭和60年度電子
通信学会半導体・材料部門全国大会予稿集、57−4に
記載のように光分岐部の中央部に屈折率変化部分を設け
、屈折率を低下させた時、光が反射し、屈折率を変化さ
せない時、光が透過する構造となっていた。
Conventional cross-type optical switches provide a refractive index changing portion in the center of the optical branching section, as described in Inoue et al., Proceedings of the 1985 IEICE Semiconductor and Materials Division National Conference, 57-4. When the refractive index was lowered, light was reflected, and when the refractive index remained unchanged, light was transmitted.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

上記従来技術は、光波が光分岐部へ入射した際、光分枝
部中央部に設けられた屈折率変化部の屈折率を制御して
、光波の透過9反射状態を実現しているが、光導波路が
シングルモード導波路のように、1μm〜数μmの幅し
か持たない時には、中央部の寸法は0.2〜1μm程度
の幅で作製しなければならず(精度良く作製することは
きわめて困難である。)、又、この時、屈折率変化部の
幅が狭いと、光波は完全に反射されることなく一部の光
波が、望まれない光路側の光導波路へもれてしまい、消
光比が劣化する。又、屈折率変化部の幅を大きくするた
めには光分岐部の幅も拡大する必要があり、その時も同
様に消光比が劣化するという問題があった。
In the above-mentioned conventional technology, when a light wave enters the light branching part, the refractive index of the refractive index changing part provided at the center of the light branching part is controlled to achieve a transmission/reflection state of the light wave. When the optical waveguide has a width of only 1 μm to several μm, such as a single-mode waveguide, the central part must be manufactured with a width of about 0.2 to 1 μm (it is extremely difficult to manufacture it with high precision). ), and at this time, if the width of the refractive index changing part is narrow, the light waves will not be completely reflected and some of the light waves will leak into the optical waveguide on the side of the optical path where it is not desired. Extinction ratio deteriorates. Furthermore, in order to increase the width of the refractive index changing section, it is necessary to increase the width of the optical branching section, and there is also the problem that the extinction ratio deteriorates at that time as well.

本発明の目的は、シングルモード光導波路を用いても、
良好な消光特性を持ち、かつ作製が容易な交差型光スイ
ッチを実現することにある。
The purpose of the present invention is to
The object of the present invention is to realize a cross-type optical switch that has good extinction characteristics and is easy to manufacture.

〔問題点を解決するための手段〕[Means for solving problems]

上記目的は、第1図に示すように、屈折率変化部4を光
分岐部5に設けることにより達成される。
The above object is achieved by providing the refractive index changing section 4 in the light branching section 5, as shown in FIG.

〔作用〕[Effect]

第1図に示した屈折率変化部4の屈折率を低下させると
、光波が光導波路2又は3から光分岐部5へ入射した時
、光波は直進し、光導波路8,7へ各々出射する。その
際光分岐部5が屈折率変化部4を持つことにより、光導
波路2又は3から入射した光波がこの領域内で広がらず
、光導波路7゜8へ漏れることなく、直進するため第2
図に示した従来型より消光性が向上する。更に、光導波
路2又は3から入射した光波を光分岐部5で反射させ、
光導波路7,8へ出射させる際には、第2図に示した従
来例と同様に、光分枝部中央に屈折率変化部6を設ける
ことにより達成されるが、この際、光導波路をシングル
モード化し光専波路幅を1μm程度のオーダの大きさと
しても、光分岐部4の幅、屈折率変化部6の幅を大きく
してやれば、消光比劣化を防ぐことができる。その結果
、従来例では、光波を直進させる際の消光比が劣化する
が、本発明では屈折率変化部4を持つため、消光比劣化
は生じない。
When the refractive index of the refractive index changing section 4 shown in FIG. 1 is lowered, when a light wave enters the optical branching section 5 from the optical waveguide 2 or 3, the light wave travels straight and exits to the optical waveguides 8 and 7, respectively. . At this time, since the optical branching section 5 has the refractive index changing section 4, the optical wave incident from the optical waveguide 2 or 3 does not spread within this region and travels straight without leaking to the optical waveguide 7°8.
The extinction property is improved compared to the conventional type shown in the figure. Furthermore, the light wave incident from the optical waveguide 2 or 3 is reflected by the optical branching section 5,
When outputting the light to the optical waveguides 7 and 8, this is achieved by providing a refractive index changing section 6 at the center of the optical branch, as in the conventional example shown in FIG. Even if a single mode is used and the optical special wave path width is on the order of 1 μm, deterioration of the extinction ratio can be prevented by increasing the width of the optical branching section 4 and the width of the refractive index changing section 6. As a result, in the conventional example, the extinction ratio deteriorates when the light wave travels straight, but in the present invention, since the refractive index changing section 4 is provided, the extinction ratio does not deteriorate.

〔実施例〕〔Example〕

以下、本発明の実施例を第1図、第3図により説明する
。第3図は、第1図のA−A’断面図である。まず、キ
ャリヤ密度が2 X 101♂】−3のn型InP基板
1の表面に、通常のエツチング法を用いて、光導波路を
形成するために溝14を設けた1次に液相エピタキシ法
を用いて、バンドギャップエネルギの波長換算値が1.
45 μmのn−InGaAsP光導波層、9およびn
 −I n P層10を順次形成した。続いてn−In
P層10の一部にZn拡散を行って電流経路11(注入
電流に対しては電流狭窄層となっている)を形成した、
最後にCr −A uを蒸着して電極13.15を設け
、A u −G e −N iを蒸着して電極12を設
けて光スイッチを完成した。
Embodiments of the present invention will be described below with reference to FIGS. 1 and 3. FIG. 3 is a sectional view taken along line AA' in FIG. First, a groove 14 was formed on the surface of an n-type InP substrate 1 with a carrier density of 2×101♂]-3 using a normal etching method to form an optical waveguide. The wavelength conversion value of the bandgap energy is 1.
45 μm n-InGaAsP optical waveguide layer, 9 and n
-I n P layers 10 were sequentially formed. Then n-In
Zn was diffused into a part of the P layer 10 to form a current path 11 (which serves as a current confinement layer for the injected current).
Finally, Cr--Au was deposited to provide electrodes 13.15, and Au-Ge-Ni was deposited to provide electrodes 12, completing the optical switch.

この光スイッチの光導波路2に波長1.55μmの光を
入射して光導波路7,8から出射する光の強度を測定し
て、光スイツチング特性を調べた。
Light with a wavelength of 1.55 μm was incident on the optical waveguide 2 of this optical switch, and the intensity of the light emitted from the optical waveguides 7 and 8 was measured to examine the optical switching characteristics.

まず、どの電極にも電流を流さない時、光波は主に光導
波路8から出射したが、光導波路7からもわずかに出射
し、その2つの光強度比、即ち消去比は15dBであっ
た。ここで屈折率変化部4に対応する電極13に電流を
流して屈折率変化部4の屈折率を低下させると消光比が
23ciBに向上した6次に、屈折率変化部6に対応す
る電極15 ・にのみ電流を流すと、屈折率変化部6の
屈折率が低下し、光波は主に先導波路7から出射し、光
路切り換えが生じ、スイッチング特性が確認できた。
First, when no current was applied to any electrode, light waves were mainly emitted from the optical waveguide 8, but also slightly emitted from the optical waveguide 7, and the ratio of the two light intensities, that is, the erasure ratio, was 15 dB. Here, when a current is applied to the electrode 13 corresponding to the refractive index changing part 4 to lower the refractive index of the refractive index changing part 4, the extinction ratio is improved to 23 ciB. - When a current was applied only to the refractive index changing portion 6, the refractive index of the refractive index changing portion 6 was lowered, and the light wave was mainly emitted from the leading waveguide 7, an optical path switching occurred, and the switching characteristics were confirmed.

この時の消光比は21dBであった。The extinction ratio at this time was 21 dB.

本実施例では屈折率の変化に半導体材料に電流を注入し
た際に示じる屈折率変化現象を利用したが、電気光学効
果等の電圧によって誘起される屈折率変化を用いても良
く、屈折率変化を行なうのに如何なる手法を用いても同
様の効果がある。又、材料としてはTnP系、GaAs
系の半導体材料だけでなく、他の半導体材料−LiNb
Osのような酸化物など、屈折率変化を生じさせうるあ
らゆる材料が使用できることは言うまでもない。
In this example, the refractive index change phenomenon that occurs when a current is injected into a semiconductor material is used to change the refractive index, but it is also possible to use a refractive index change induced by a voltage such as an electro-optic effect. Any technique used to effect the rate change will have a similar effect. In addition, the materials include TnP type, GaAs
As well as other semiconductor materials - LiNb
It goes without saying that any material that can cause a change in refractive index can be used, such as oxides such as Os.

〔発明の効果〕〔Effect of the invention〕

本発明によれば、消光比の大きい実用的な光スイッチが
、極度に微細な加工技術を用いることなく提供できるの
で、光伝送・通信シス′テムの構築が容易となり、した
がってその産業上の効果は極めて大きいものである。
According to the present invention, a practical optical switch with a large extinction ratio can be provided without using extremely fine processing technology, making it easy to construct an optical transmission/communication system, and thus improving its industrial effects. is extremely large.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の概要および実施例を示す図、第2図は
従来例の概要を示す図、および第3図は第1図のA−A
’断面図である。
FIG. 1 is a diagram showing an outline and an embodiment of the present invention, FIG. 2 is a diagram showing an outline of a conventional example, and FIG. 3 is an A-A diagram in FIG. 1.
'This is a cross-sectional view.

Claims (1)

【特許請求の範囲】[Claims] 1、基板上に形成した光導波路が交差する光分岐部分の
一部の屈折率を変化させて光路の切り換えを行う光スイ
ッチにおいて、該屈折率変化部分を光分岐部分の両脇の
少なくとも一方に設けたことを特徴とする光スイッチ。
1. In an optical switch that switches the optical path by changing the refractive index of a part of the optical branching part where the optical waveguides formed on the substrate intersect, the refractive index changing part is placed on at least one of both sides of the optical branching part. An optical switch characterized by the following:
JP16362286A 1986-07-14 1986-07-14 Optical switch Pending JPS6319630A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16362286A JPS6319630A (en) 1986-07-14 1986-07-14 Optical switch

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16362286A JPS6319630A (en) 1986-07-14 1986-07-14 Optical switch

Publications (1)

Publication Number Publication Date
JPS6319630A true JPS6319630A (en) 1988-01-27

Family

ID=15777426

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16362286A Pending JPS6319630A (en) 1986-07-14 1986-07-14 Optical switch

Country Status (1)

Country Link
JP (1) JPS6319630A (en)

Similar Documents

Publication Publication Date Title
US4813757A (en) Optical switch including bypass waveguide
JP2583480B2 (en) Optical switch and optical switch array
US4778235A (en) Optical switch
JPS62174728A (en) Optical switch
US4784451A (en) Waveguide optical switches
JPS6319630A (en) Optical switch
JPS58114476A (en) Semiconductor laser
JPS62297826A (en) Optical switch
JPS6145230A (en) Optical switch
JPS63194235A (en) Optical switch
JPH023024A (en) Semiconductor optical switch
JPS60173519A (en) Semiconductor optical switch
JPS62297825A (en) Optical switch
JPS6374039A (en) Optical switch
JPS63202722A (en) Optical switch
JPH0355525A (en) Waveguide type optical switch
JPH02308125A (en) Waveguide type optical switch
JPS60212727A (en) Loading type directional coupler
JPH02298923A (en) Semiconductor optical switch
JPH09105959A (en) Optical switch
JPH08234245A (en) Semiconductor 1x3 optical device
JPH0719002B2 (en) Light switch
JPH04190332A (en) Waveguide path type light switch
JPH0293435A (en) Optical switch
JPS62136625A (en) Manufacture of optical switch