JPS63189253A - Thermal head - Google Patents
Thermal headInfo
- Publication number
- JPS63189253A JPS63189253A JP2142887A JP2142887A JPS63189253A JP S63189253 A JPS63189253 A JP S63189253A JP 2142887 A JP2142887 A JP 2142887A JP 2142887 A JP2142887 A JP 2142887A JP S63189253 A JPS63189253 A JP S63189253A
- Authority
- JP
- Japan
- Prior art keywords
- heat
- resin layer
- thermal head
- layer
- resistant resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims abstract description 28
- 229910052751 metal Inorganic materials 0.000 claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 27
- 229920006015 heat resistant resin Polymers 0.000 claims abstract description 26
- 229920001721 polyimide Polymers 0.000 claims abstract description 16
- 239000009719 polyimide resin Substances 0.000 claims abstract description 16
- 150000004703 alkoxides Chemical class 0.000 claims abstract description 11
- 239000012212 insulator Substances 0.000 claims abstract description 10
- 238000005240 physical vapour deposition Methods 0.000 claims abstract description 7
- 229920005989 resin Polymers 0.000 claims abstract description 6
- 239000011347 resin Substances 0.000 claims abstract description 6
- 239000004962 Polyamide-imide Substances 0.000 claims abstract description 5
- 229920002312 polyamide-imide Polymers 0.000 claims abstract description 5
- 238000010438 heat treatment Methods 0.000 claims description 23
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- 238000012986 modification Methods 0.000 claims description 4
- 230000004048 modification Effects 0.000 claims description 4
- 238000000992 sputter etching Methods 0.000 claims description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims description 2
- 238000009832 plasma treatment Methods 0.000 claims description 2
- 239000007772 electrode material Substances 0.000 abstract description 9
- 239000000463 material Substances 0.000 abstract description 9
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract description 8
- 239000007789 gas Substances 0.000 abstract description 8
- 238000004544 sputter deposition Methods 0.000 abstract description 6
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 abstract description 6
- 238000001771 vacuum deposition Methods 0.000 abstract description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 2
- 239000000203 mixture Substances 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000004090 dissolution Methods 0.000 abstract 1
- 238000007733 ion plating Methods 0.000 abstract 1
- 238000007493 shaping process Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 56
- 239000002585 base Substances 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000003064 anti-oxidating effect Effects 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- 229910000640 Fe alloy Inorganic materials 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000005338 heat storage Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/315—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material
- B41J2/32—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads
- B41J2/335—Structure of thermal heads
Abstract
Description
【発明の詳細な説明】
［発明の目的コ
（産業上の利用分野）
本発明は、ファクシミリやプリンタ等の感熱記録装置に
用いられるサーマルヘッドに関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention (Field of Industrial Application) The present invention relates to a thermal head used in a thermal recording device such as a facsimile or a printer.
（従来の技術）
近年、サーマルヘッドは、受音、省保守、低ランニング
コスト等の利点を生かして、ファクシミリ、ワードプロ
セッサ用プリンター等の各種の記録装置に多用されるよ
うになってきている。一方、これらの機器は小型化、低
価格化が要請されており、このためサーマルヘッドにも
小型で安価なものが望まれている。(Prior Art) In recent years, thermal heads have come to be widely used in various recording devices such as facsimiles and word processor printers, taking advantage of their advantages such as sound reception, reduced maintenance, and low running costs. On the other hand, these devices are required to be smaller and lower in price, and therefore there is a demand for smaller and cheaper thermal heads.
ところで従来のサーマルヘッドは、Ａｊ２２Ｏｘの純度
が９０％以上のセラミック基板の上にグレーズガラス層
を形成したものを高抵抗基体として多用している。しか
しながら、このようなセラミックス基板は、その製造に
際して、原料粉末からアルカリ金属成分を除去する処理
、高温焼成、高温焼成時に生じた基板の反りをとるめな
の仕上げの研磨等の多くの工程を必要とするため、生産
コストが高くなるという問題があった。By the way, conventional thermal heads often use as a high-resistance substrate a ceramic substrate with Aj22Ox purity of 90% or more and a glazed glass layer formed on it. However, when manufacturing such ceramic substrates, many steps are required, such as treatment to remove alkali metal components from raw material powder, high-temperature firing, and finishing polishing to remove warpage of the substrate that occurs during high-temperature firing. Therefore, there was a problem in that production costs increased.
このため、最近、金属基板上に熱の放散および蓄熱をコ
ントロールする保温層としての役割と金属基板の絶縁層
としての役割を兼備えたポリイミド系樹脂からなる層を
形成したものを用いた小型で安価で印字性能に優れたた
て型のサーマルヘッドが提案されている（昭和６１年度
電子通信学会総合全国大会概要集（１９８６） 、 １
−１２５及び５− １２６）。For this reason, recent efforts have been made to develop compact designs using a layer made of polyimide resin formed on a metal substrate, which functions as a heat-retaining layer that controls heat dissipation and heat accumulation, as well as an insulating layer for the metal substrate. A vertical thermal head that is inexpensive and has excellent printing performance has been proposed (Summary of the 1986 Institute of Electronics and Communication Engineers National Conference (1986), 1
-125 and 5-126).
このような従来の金属基板上にポリイミド系樹脂層を形
成してなるサーマルヘッドの構造及び製造方法を第３図
および第４図を用いて説明する。The structure and manufacturing method of such a conventional thermal head in which a polyimide resin layer is formed on a metal substrate will be explained with reference to FIGS. 3 and 4.
但しここでは、たて型サーマルヘッドではなく平型サー
マルヘッドで説明する。However, here, a flat thermal head will be explained instead of a vertical thermal head.
第３図において、１はＦｅ合金等からなる金属基板であ
り、この上に蓄熱層と絶縁層とを兼ねるポリイミド樹脂
層２が形成されており、この上にＴａ−８１０２、Ｔｉ
−３ｉ０２、Ｃｒ ５ｔＯ２等からなる発熱抵抗体３
が形成されており、さらにこの発熱抵抗体３の上に発熱
部６となる開孔を形成する如く純ＡぶやＡＪ−３ｉ等か
らなる個別電極４および共通電極５が形成され、少なく
ともこの発熱部６を被覆するように５ｔｏ２からなる酸
化防止膜７とＴａ２Ｏ５からなる耐り耗膜８とが順次形
成されている。In FIG. 3, reference numeral 1 denotes a metal substrate made of Fe alloy, etc., on which a polyimide resin layer 2 serving as a heat storage layer and an insulating layer is formed, and on this, Ta-8102, Ti
-3i02, Cr 5tO2, etc. heating resistor 3
Furthermore, individual electrodes 4 and common electrodes 5 made of pure aluminum, AJ-3i, etc. are formed to form openings that will become heat generating parts 6 on this heat generating resistor 3, and at least this heat generating part 6 is formed. An oxidation prevention film 7 made of 5to2 and an abrasion resistant film 8 made of Ta2O5 are sequentially formed to cover the portion 6.
このようなサーマルヘッドは、例えば次のようにして作
られる。Such a thermal head is manufactured, for example, as follows.
すなわちまず、所定の寸法に切断された平面状の金属基
板１を洗浄し、必要に応じて表面処理を行う（第４図−
イ）０次いで、この金属基板１の上にフェス状のポリ・
イミド前駆体をロールコータ−やスピンオンコーターを
用いて所定の厚さに塗布し、乾燥およびキュアーを行い
脱水環化してイミド化を行いポリイミド樹脂層２を形成
する（第４図−口）０次に、このポリイミド樹脂層２上
に発熱抵抗体物質をスパッタリング法等により膜形成し
く第４図−八）、次いで電極物質を真空蒸着法等により
膜形成した後（第４図−二）、この電極物質膜の上に所
望の回路パターンのマスキング膜を形成し、ドライエツ
チング等の方法により電極物質および発熱抵抗体物質を
所望の形状に溶解除去して、個々の発熱抵抗体３、個別
電極４、共通電極５および発熱部６を形成する（第４図
−ホ）、この後、酸化防止膜１１および耐摩耗膜１２を
順次スパッタリング法等により形成しく第４図−へ）、
サーマルヘッドを完成させる。That is, first, a planar metal substrate 1 cut into predetermined dimensions is cleaned, and if necessary, surface treatment is performed (Fig. 4-
b) Next, on this metal substrate 1, a face-shaped poly
An imide precursor is applied to a predetermined thickness using a roll coater or a spin-on coater, dried, cured, dehydrated and cyclized, and imidized to form a polyimide resin layer 2 (Fig. 4 - Portion). Next, after forming a film of a heating resistor material on this polyimide resin layer 2 by sputtering or the like (Fig. 4-8), and then forming a film of an electrode material by a vacuum evaporation method or the like (Fig. 4-2), A masking film with a desired circuit pattern is formed on the electrode material film, and the electrode material and heating resistor material are dissolved and removed in a desired shape by a method such as dry etching to form individual heating resistors 3 and individual electrodes 4. , forming the common electrode 5 and the heat generating part 6 (FIG. 4-E), then forming the anti-oxidation film 11 and the wear-resistant film 12 sequentially by sputtering or the like (see FIG. 4-),
Complete the thermal head.
このような金属基板上にポリイミド樹脂層を配置してな
る高抵抗基体を用いたサーマルヘッドは、従来のアルミ
ナ基板上にクレーズガラスを形成してなる高抵抗基体を
用いたサーマルヘッドと比較して、熱効率に優れており
、また価格的にも低コスト化が可能であり、さらに曲げ
加工の容易さからたて型のサーマルヘッドを形成するこ
とが可能で小型化しやすいという特徴を有しており、産
業界が模索中の小型で安価な高性能のサーマルヘッドに
合致し、実用化が期待されている。A thermal head using a high-resistance base made of a polyimide resin layer arranged on a metal substrate has a higher resistance than a conventional thermal head using a high-resistance base made of craze glass formed on an alumina substrate. , it has excellent thermal efficiency and can be lowered in price, and it is also easy to bend, making it possible to form a vertical thermal head, making it easy to miniaturize. , which matches the industry's search for a compact, inexpensive, high-performance thermal head, and is expected to be put into practical use.
（発明が解決しようとする問題点）
しかしながら、このような金属基板上にポリイミド系樹
脂層を配置してなる高抵抗基体を用いたサーマルヘッド
の実用化に当たって、解決すべき問題点も多い。(Problems to be Solved by the Invention) However, there are many problems that need to be solved in order to put into practical use a thermal head using a high-resistance substrate formed by disposing a polyimide resin layer on a metal substrate.
それらの１つとして、電極物質膜および発熱抵抗体物質
膜にエツチング処理を施して所望のパターーンの回路を
形成する際に、発熱抵抗体３とポリイミド樹脂層２の間
のドライエツチングガスに対するエツチング選択比が小
さくポリイミド樹脂層２をも一緒に溶解してしまい、ま
たマスキング膜のアッシング時にも同様にポリイミド樹
脂層に損傷を与えてしまうという問題があった。One of them is the etching selection for the dry etching gas between the heating resistor 3 and the polyimide resin layer 2 when etching the electrode material film and the heating resistor material film to form a circuit with a desired pattern. There was a problem in that the ratio was small and the polyimide resin layer 2 was also dissolved, and the polyimide resin layer was similarly damaged during ashing of the masking film.
さらに、真空中でこのポリイミド樹脂層の上に発熱抵抗
体を着膜させる際に、ポリイミド樹脂層内からガス放出
が起こるという問題もあり、このガスの影響により従来
のセラミックス基板上にグレーズガラスを形成した高抵
抗基体に比べて、抵抗値の制御が難しいという問題も生
じている。Furthermore, when depositing a heating resistor on top of this polyimide resin layer in a vacuum, there is also the problem that gas is released from within the polyimide resin layer. Another problem has arisen in that it is difficult to control the resistance value compared to the formed high-resistance substrate.
本発明はこのような問題点を解決するためになされたも
ので、電極物質膜および発熱抵抗体物質膜を所望の回路
パターンに溶解除去するあたって、ポリイミド樹脂層に
損傷を与えることなく、かつ抵抗値の制御が容易な小型
で安価な高性能のサーマルヘッドを提供することを目的
とする。The present invention was made to solve these problems, and it is possible to dissolve and remove the electrode material film and heating resistor material film into a desired circuit pattern without damaging the polyimide resin layer. The purpose of the present invention is to provide a small, inexpensive, and high-performance thermal head whose resistance value can be easily controlled.
［発明の槙成］
（問題を解決するための手段）
本発明のサーマルヘッドは、高熱伝導性の支持基板と、
この支持基板上に形成された耐熱樹脂層と、この耐熱樹
脂層上に形成された多数の発熱抵抗体と、これら各発熱
抵抗体に接続された導電体とを少なくとも備えてなるサ
ーマルヘッドにおいて、前記耐熱樹脂層と前記発熱抵抗
体との間に無機絶縁物からなる下地層を形成したことを
特徴としている。[Makinari of the Invention] (Means for Solving the Problem) The thermal head of the present invention includes a highly thermally conductive support substrate,
A thermal head comprising at least a heat-resistant resin layer formed on this support substrate, a large number of heating resistors formed on this heat-resistant resin layer, and a conductor connected to each of these heating resistors, The present invention is characterized in that a base layer made of an inorganic insulator is formed between the heat-resistant resin layer and the heating resistor.
本発明における下地層は、例えば５ｉｏ２、Ａｉ２Ｏｇ
、ＴｉＯ２、Ｔａ２Ｏ５等の無機絶縁物からなるもの
である。この下地層の形成方法としては、スパッタリン
グ法、イオンブレーティング法、真空蒸着法等の物理的
蒸着法（ＰＶＤ法）、常圧および減圧化学的気相成長法
（ＣＶＤ法）、金属アルコキシド法等が挙げられる。な
お、金属アルコキシド法は、金属アルコキシドを含有す
る溶液を被着させ焼成することにより金属酸化物層を形
成する方法である。The base layer in the present invention is, for example, 5io2, Ai2Og
, TiO2, Ta2O5, or other inorganic insulators. Methods for forming this underlayer include sputtering method, ion blasting method, physical vapor deposition method (PVD method) such as vacuum evaporation method, normal pressure and low pressure chemical vapor deposition method (CVD method), metal alkoxide method, etc. can be mentioned. Note that the metal alkoxide method is a method of forming a metal oxide layer by depositing and firing a solution containing a metal alkoxide.
また、下地層の厚さとしては、１０００〜１００００人
の範囲が好ましく、下地層の厚さが１０００人未満では
、耐熱樹脂層の十分な保護および抵抗値の安定化の効果
が得られず、１００００人を越えてもそれ以上の効果が
得られないばかりが、物理的蒸着法や化学的気相成長法
を使用した場合には、膜形成に要する時間が長くなり、
また金属アルコキシド法を使用した場合には、−回の作
業で形成することが困難となる。Further, the thickness of the base layer is preferably in the range of 1,000 to 10,000. If the thickness of the base layer is less than 1,000, sufficient protection of the heat-resistant resin layer and stabilization of the resistance value cannot be obtained. Even if the number of people exceeds 10,000, no further effect will be obtained, but if physical vapor deposition or chemical vapor deposition is used, the time required to form the film will be longer.
Furthermore, when the metal alkoxide method is used, it is difficult to form the layer in two operations.
（作 用）
本発明のサーマルヘッドにおいて、耐熱樹脂層と発熱抵
抗体との間に無機絶縁物からなる下地層を形成している
ので、電極物質および発熱抵抗体物質を所望の回路パタ
ーンに溶解除去する際に、耐熱樹脂層を損傷する恐れが
なくなり、またこの下地層によりガスを発生させること
なく、発熱抵抗体を形成できるので、抵抗値の制御が容
易となる。(Function) In the thermal head of the present invention, since a base layer made of an inorganic insulator is formed between the heat-resistant resin layer and the heating resistor, the electrode material and the heating resistor material are dissolved into a desired circuit pattern. There is no risk of damaging the heat-resistant resin layer during removal, and the heating resistor can be formed without generating gas from this underlayer, making it easier to control the resistance value.
（実施例） 次に、本発明の一実施例を図面を参照して説明する。(Example) Next, one embodiment of the present invention will be described with reference to the drawings.
第１図に示すように、この実施例のサーマルヘッドは、
Ｃｒを１６重量％含有するＦｅ合金からなる厚さ０．ｌ
ｌ１ｎ程度の金属基板９上に蓄熱層と絶縁層を兼ねるポ
リイミド樹脂またはポリアミドイミド樹脂、あるいはこ
れらの混合物からなる耐熱樹脂層１０が形成されており
、この耐熱樹脂層１０の上に５１０２ 、ＡＪ２２ＯＢ
、ＴｉＯ２、Ｔａ２Ｏ５等の無機絶縁物からなる下地
層１１が形成されている。さらにこの下地層１１の上に
Ｔ ａ −３ｉ０２．Ｔｉ−８ｉＯ２、Ｃｒ−１ｉｏ２
等からなる発熱抵抗体１２が形成されており、この発熱
抵抗体１２の上に発熱部１５となる開孔を形成する如＜
ＡＪ２やＡＪ−８ｉ−Ｃｕからなる個別電極１３および
共通電極１４が形成され、少なくともこの発熱部１５を
被覆するように８１０２からなる酸化防止膜１６および
Ｔａ２Ｏ５からなる耐摩耗ＷＡ２３が形成されている。As shown in FIG. 1, the thermal head of this embodiment is
Thickness: 0.0mm made of Fe alloy containing 16% by weight of Cr. l
A heat-resistant resin layer 10 made of polyimide resin, polyamide-imide resin, or a mixture thereof, which serves as a heat storage layer and an insulating layer, is formed on a metal substrate 9 of about l1n.
A base layer 11 made of an inorganic insulator such as , TiO2, Ta2O5, etc. is formed. Further, on this base layer 11, T a -3i02. Ti-8iO2, Cr-1io2
A heat-generating resistor 12 is formed, and an opening that becomes a heat-generating portion 15 is formed on the heat-generating resistor 12.
Individual electrodes 13 and common electrodes 14 made of AJ2 or AJ-8i-Cu are formed, and an anti-oxidation film 16 made of 8102 and a wear-resistant WA 23 made of Ta2O5 are formed so as to cover at least this heat generating part 15.
そしてこのサーマルヘッドは、個別電極１３と共通電［
＃１４との間に所定の時間間隔でパルス電圧を印加する
ことにより発熱部１５の発熱抵抗体１２が発熱し印字記
録が行なわれる。And this thermal head connects the individual electrode 13 and the common electrode [
By applying a pulse voltage at predetermined time intervals between #14 and #14, the heating resistor 12 of the heating section 15 generates heat and printing is performed.
このサーマルヘッドは、例えば次のようにして製造され
る。This thermal head is manufactured, for example, as follows.
まず、Ｆｅ−１６重量％Ｃｒ合金からなる金属基板９を
所定の寸法に切断し、脱脂洗浄して乾燥後、乾水素雰囲
気中において６００°Ｃ〜８００℃で熱処理を行う（第
２図−イ）０次いで、この金属基板９上にポリアミドイ
ミドまたはポリアミドイミドワニスをローラーコーター
やスピンオンコーターを用いて、焼成後に２Ｏ〜３０μ
他の膜厚となるように所定Ｊｌ塗布し、乾燥、焼成を行
ない耐熱樹脂層１０を形成する（第２図−口）。First, a metal substrate 9 made of Fe-16 wt% Cr alloy is cut into predetermined dimensions, degreased, cleaned, dried, and then heat treated at 600°C to 800°C in a dry hydrogen atmosphere (Fig. 2-I). )0 Next, polyamide-imide or polyamide-imide varnish is coated on this metal substrate 9 using a roller coater or a spin-on coater, and after baking, a coating of 20 to 30 μm is applied.
The heat-resistant resin layer 10 is formed by applying a predetermined amount of Jl to a different thickness, drying, and baking (FIG. 2-port).
この後、耐熱樹脂層１０と下地層１１との接着性を良好
にするために、耐熱樹脂層１０の表面に例えばプラズマ
処理、スパッタエツチング処理、紫外線照射処理または
オゾンガス照射処理、もしくはこれらの組み合せからな
る表面改質処理を行なうことが好ましく、特に０２ガス
を１〜５ｉｏ１％添加したＡｒガスを用いたスパッタエ
ツチング処理が有効である（第２図−八）。Thereafter, in order to improve the adhesion between the heat-resistant resin layer 10 and the base layer 11, the surface of the heat-resistant resin layer 10 is subjected to, for example, plasma treatment, sputter etching treatment, ultraviolet irradiation treatment, ozone gas irradiation treatment, or a combination thereof. It is preferable to carry out surface modification treatment, and sputter etching treatment using Ar gas to which 1 to 5 io1% of 02 gas is added is particularly effective (FIG. 2-8).
次にこの耐熱樹脂層１０上に！３１０２、Ａぶ２”
ＯＢ 、ＴｉＯ２、Ｔａ２Ｏ５等の無機絶縁物からな
る下地層１１をＰＶＤ法、ＣＶＤ法または金属アルコキ
シド法により形成する（第２図−二）。Next, on this heat-resistant resin layer 10! 3102, Abu2”
A base layer 11 made of an inorganic insulator such as OB, TiO2, Ta2O5, etc. is formed by a PVD method, a CVD method, or a metal alkoxide method (FIG. 2-2).
下地層の形成に際して、それぞれの形成方法番こよって
付着力は、ＰＶＤ法＞ＣＶＤ法〉金属アルコキシド法の
順であったが、耐熱樹脂層の表面改質処理によって十分
な表面の親水化を行なえば、金属アルコキシド法によっ
ても十分な付着強度が得られた。これは次式に示すよう
に、金属アルコキシドと被着物との間の接着反応が被着
物表面に吸着したＯＨ基を介して行なわれるがらである
。When forming the base layer, the adhesion strength was in the order of PVD method > CVD method > metal alkoxide method depending on the formation method, but the surface was made sufficiently hydrophilic by surface modification treatment of the heat-resistant resin layer. For example, sufficient adhesion strength was obtained by the metal alkoxide method. This is because the adhesion reaction between the metal alkoxide and the adherend is carried out via the OH groups adsorbed on the surface of the adherend, as shown in the following formula.
またコスト的には、真空を必要とせず設備費の安い金属
アルコキシド法が最もコストメリットが認められた。In terms of cost, the metal alkoxide method, which does not require a vacuum and has low equipment costs, was found to have the most cost advantage.
次いで、この下地層１１の上にスパッタリングやその他
の公知の方法によりＴ ａ −Ｓ ｉ Ｏ２、Ｃｒ−５
ｉ０２ 、Ｔｉ−３ｉＯ２等からなる発熱抵抗体物質を
膜形成しく第２図−ホ）、次いで電極物質のＡＪやＡ、
ｇ−３ｉ二ＣｕあるいはＡｕ等を真空蒸着法等により膜
形成した後（第２図−へ）、発熱部１５となる開孔が形
成されるような所望の回路パターンのマスキング膜を形
成してドライエツチング処理を行ない個々の発熱抵抗体
１２、個別電極１３および共通電極１４を形成する（第
２図−ト）。この後、酸化防止膜１６および耐摩耗膜１
７をスパッタリングやその他公知の方法で形成しく第２
図−千）、サーマルヘッドを完成させる。Next, T a -S i O2, Cr-5 is deposited on this base layer 11 by sputtering or other known methods.
A heating resistor material made of iO2, Ti-3iO2, etc. is formed into a film (Fig. 2-E), and then electrode materials AJ, A,
g-3i After forming a film of Cu, Au, etc. by a vacuum evaporation method (see Fig. 2), a masking film with a desired circuit pattern in which openings that will become the heat generating part 15 are formed is formed. A dry etching process is performed to form individual heating resistors 12, individual electrodes 13, and common electrode 14 (see FIG. 2). After this, the anti-oxidation film 16 and the wear-resistant film 1
7 by sputtering or other known methods.
Figure - 1,000), complete the thermal head.
すなわちこの実施例によれば、耐熱樹脂層と発熱抵抗体
との間仁無機絶縁物からなる下地層を形成しているので
、電極物質および発熱抵抗体物質を所望の回路パターン
に溶解除去する際に、この下地層が耐熱樹脂層の保護層
の役割をするため、耐熱樹脂層を損傷する恐れがなくな
り、また発熱抵抗体物質の真空中における形成時にガス
を発生することがなくなるため、抵抗値の安定化の役割
もはたし、良好なサーマルヘッドが得られる。That is, according to this embodiment, since a base layer made of an inorganic insulating material is formed between the heat-resistant resin layer and the heat-generating resistor, when the electrode material and the heat-generating resistor material are dissolved and removed to form a desired circuit pattern, In addition, since this base layer acts as a protective layer for the heat-resistant resin layer, there is no risk of damaging the heat-resistant resin layer, and gas is not generated when the heating resistor material is formed in vacuum, so the resistance value It also plays a stabilizing role and provides a good thermal head.
なお、この実施例においては、金属基板上に保温層とし
て耐熱樹脂層を形成したものについて説明したが、支持
基板としては金属に限らすセラミックスやガラスであっ
ても本発明の効果は同様に期待できる。ただし、金属基
板を支持基板として用いた場合は、この金属基板自体を
共通電極に用いることもできることや、曲げ加工が可能
なことからサーマルヘッドの小型化に大きく寄与する。In this example, a heat-resistant resin layer was formed as a heat insulating layer on a metal substrate. However, the effect of the present invention can be expected to be achieved even if the supporting substrate is not limited to metal but ceramics or glass. can. However, when a metal substrate is used as a support substrate, this metal substrate itself can be used as a common electrode and can be bent, which greatly contributes to miniaturization of the thermal head.
［発明の効果］
以上説明したように本発明においては、耐熱樹脂層と発
熱抵抗体との間に無機絶縁物からなる下地層を形成して
いるので、耐熱樹脂層に損傷を与えることがなくなり、
さらに抵抗値の制御も容易となり、小型でかつ安価で、
性能に優れたサーマルヘッドを提供することができる。[Effects of the Invention] As explained above, in the present invention, since the base layer made of an inorganic insulator is formed between the heat-resistant resin layer and the heating resistor, the heat-resistant resin layer is not damaged. ,
Furthermore, it is easier to control the resistance value, and it is small and inexpensive.
A thermal head with excellent performance can be provided.
第１図は本発明の一実施例のサーマルヘッドを示す斜視
図、第２図は本発明の一実施例のサーマルヘッドの製造
方法を示すフローチャート図、第３図は従来のサーマル
ヘッドを示す斜視図、第４図は従来のサーマルヘッドの
製造方法を示すフローチャート図である。
９・・・・・・・・・金属基板
１０・・・・・・・・・耐熱樹脂層
１１・・・・・・・・・下地層
１２・・・・・・・・・発熱抵抗体
１３・・・・・・・・・個別電極
１４・・・・・・・・・共通電極
１５・・・・・・・・・発熱部
１６・・・・・・・・・酸化防止膜
１７・・・・・・・・・耐摩耗膜
出願人 株式会社 東芝
同 東芝電子デバイス
エンジニアリング株式会社
代理人 弁理士 須 山 佐 −
第１図
第２図FIG. 1 is a perspective view showing a thermal head according to an embodiment of the present invention, FIG. 2 is a flowchart showing a method for manufacturing a thermal head according to an embodiment of the present invention, and FIG. 3 is a perspective view showing a conventional thermal head. 4 are flowcharts showing a conventional method for manufacturing a thermal head. 9...Metal substrate 10...Heat-resistant resin layer 11...Underlayer 12...Heating resistor 13...Individual electrode 14...Common electrode 15...Heating part 16...Anti-oxidation film 17・・・・・・・・・Abrasion resistant film Applicant: Toshiba Corporation Toshiba Electronic Device Engineering Co., Ltd. Agent Patent attorney: Satoshi Suyama - Figure 1 Figure 2
Claims (7)
された耐熱樹脂層と、この耐熱樹脂層上に形成された多
数の発熱抵抗体と、これら各発熱抵抗体に接続された導
電体とを少なくとも備えてなるサーマルヘッドにおいて
、 前記耐熱樹脂層と前記発熱抵抗体との間に無機絶縁物か
らなる下地層を形成したことを特徴とするサーマルヘッ
ド。(1) A support substrate with high thermal conductivity, a heat-resistant resin layer formed on this support substrate, a large number of heat-generating resistors formed on this heat-resistant resin layer, and a conductive material connected to each of these heat-generating resistors. 1. A thermal head comprising: a base layer made of an inorganic insulator between the heat-resistant resin layer and the heating resistor.
、ＴｉＯ＿２、またはＴａ＿２Ｏ＿５であることを特徴
とする特許請求の範囲第１項記載のサーマルヘッド。(2) The inorganic insulator is SiO_2, Al_2O_3
, TiO_2, or Ta_2O_5. The thermal head according to claim 1.
範囲であることを特徴とする特許請求の範囲第１項また
は第２項記載のサーマルヘッド。(3) The thermal head according to claim 1 or 2, wherein the underlayer has a thickness in a range of 1000 to 10000 Å.
または金属アルコキシド法により形成されてなることを
特徴とする特許請求の範囲第１項ないし第３項のいずれ
か１項記載のサーマルヘッド。(4) The base layer is formed by a physical vapor deposition method, a chemical vapor deposition method, or a metal alkoxide method, according to any one of claims 1 to 3. thermal head.
ミドイミド樹脂からなることを特徴とする特許請求の範
囲第１項ないし第４項のいずれか１項記載のサーマルヘ
ッド。(5) The thermal head according to any one of claims 1 to 4, wherein the heat-resistant resin layer is made of polyimide resin or polyamide-imide resin.
ていることを特徴とする特許請求の範囲第５項記載のサ
ーマルヘッド。(6) The thermal head according to claim 5, wherein the surface of the heat-resistant resin layer is subjected to a surface modification treatment.
ッチング処理、紫外線照射処理またはオゾンガス照射処
理、もしくはこれらの組み合せからなることを特徴とす
る特許請求の範囲第６項記載のサーマルヘッド。(7) The thermal head according to claim 6, wherein the surface modification treatment comprises plasma treatment, sputter etching treatment, ultraviolet irradiation treatment, ozone gas irradiation treatment, or a combination thereof.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2142887A JPS63189253A (en) | 1987-01-31 | 1987-01-31 | Thermal head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2142887A JPS63189253A (en) | 1987-01-31 | 1987-01-31 | Thermal head |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63189253A true JPS63189253A (en) | 1988-08-04 |
Family
ID=12054719
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2142887A Pending JPS63189253A (en) | 1987-01-31 | 1987-01-31 | Thermal head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63189253A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0433093A2 (en) * | 1989-12-15 | 1991-06-19 | Sharp Kabushiki Kaisha | Thermal head for thermal recording machine |
-
1987
- 1987-01-31 JP JP2142887A patent/JPS63189253A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0433093A2 (en) * | 1989-12-15 | 1991-06-19 | Sharp Kabushiki Kaisha | Thermal head for thermal recording machine |
| US5252988A (en) * | 1989-12-15 | 1993-10-12 | Sharp Kabushiki Kaisha | Thermal head for thermal recording machine |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2006194873A5 (en) | ||
| TW515853B (en) | Improved anode formulation and methods of manufacture | |
| KR970013180A (en) | Electrostatic chuck member and manufacturing method thereof | |
| JP2637804B2 (en) | Substrate with plating | |
| JPS63189253A (en) | Thermal head | |
| US4720419A (en) | Substrates for electronic devices | |
| JPS63297066A (en) | Thermal head and production thereof | |
| JPH0679444B2 (en) | Electric film | |
| JPS62286248A (en) | Electrostatic chuck plate and manufacture thereof | |
| JPS63116867A (en) | Thermal head | |
| JP2597564B2 (en) | Thermal head | |
| JPH01145386A (en) | Graphite crucible | |
| JPS60200877A (en) | Formation of metal compound membrane | |
| JPS63166554A (en) | Thermal head and manufacture thereof | |
| JPS63302069A (en) | Thermal head | |
| JPS63189255A (en) | Thermal head | |
| JPS63246260A (en) | Thermal head | |
| JPS63302068A (en) | Thermal head | |
| JPH0278576A (en) | Heat-resistant insulating substrate and thermal head | |
| JPS6358707A (en) | Manufacture of electric film | |
| JPH02236911A (en) | Ceramics coating member | |
| JPS58181868A (en) | Crystallized enamel base plate | |
| JPS6120358A (en) | Substrate for mounting semiconductor element | |
| JPH02267286A (en) | Enameled substrate | |
| JPH03138164A (en) | Thermal head and its manufacture |