JP2006194873A5 - - Google Patents

Claims (6)

In order to reduce charged particulate deposition on the conductive surfaces (100a, 100b) that define the wetted portion of the coolant flow path in the reactor ,
Providing a conductive surface;
Said conductive surface, under conditions sufficient to form a first organometallic precursor compound substantially continuous base dielectric layer on the conductor surface by decomposing, exposing the precursor compound A base insulating layer forming step of forming a base insulating layer (102) by:
Said conductive surface, sufficient to form a substantially continuous outer dielectric layer on the first organometallic precursor compound different from the second to decompose the organic metal precursor compound the conductive surface An outer insulating layer forming step of forming an outer insulating layer (104) different from the base insulating layer (102) by exposing the second organometallic precursor compound to the second organometallic precursor compound under the following conditions :
A charged particle deposition reduction method comprising:
The insulating base layer forming step includes
The base insulating layer (102) is formed using a CVD process that maintains the conductive surface at a first deposition temperature between about 400 ° C. and about 500 ° C. and a first deposition pressure of about 20 mTorr or less. Forming step;
Forming an outer insulating layer (104) using a CVD process that maintains the base insulating layer at a second deposition temperature between about 400 ° C. and about 500 ° C. and a second deposition pressure of about 20 mTorr or less. And steps to
Including
Said base insulating layer (102) is _{TiO 2, Ta 2 O 5,} SiO 2, Al 2 O 3, ZrO 2, Nb 2 O 5, SrBi 2, Ta 2 O 3, Y 2 O 3, HfO 2, BaO, Consisting essentially of a first insulating material selected from the group consisting of SrO, SrTiO ₃ , PbTiO ₃ and PbZrO ₃ and having a base layer thickness between about 0.1 μm and about 2 μm;
It said outer insulating layer (104) is _{TiO 2, Ta 2 O 5,} SiO 2, Al 2 O 3, ZrO 2, Nb 2 O 5, SrBi 2, Ta 2 O 3, Y 2 O 3, HfO2, BaO, SrO , Consisting essentially of a second insulating material selected from the group consisting of SrTiO ₃ , PbTiO ₃ and PbZrO ₃ and having an outer layer thickness between about 0.5 μm and about 3 μm Charged particle deposition reduction method. Further, the base insulating layer (102) and the outer insulating layer (104) are formed using a CVD process. The reduction method according to claim 1,
Forming the insulating base layer using an ALD process (102),
Reduction method characterized by further including the step of forming said outer insulating layer by using the CVD process (104). The reduction method according to claim 1,
The base insulating layer (102) is formed by atomic layer deposition (ALD), chemical vapor deposition (CVD), physical vapor deposition (PVD), plasma enhanced physical vapor deposition (PEPVD), sputtering, plasma spray coating ( Formed using a method selected from the group consisting of APS, VPS and LPPS) and high velocity flame spraying (HVOF) processes;
The outer insulating layer (104) is formed by atomic layer deposition (ALD), chemical vapor deposition (CVD), physical vapor deposition (PVD), plasma enhanced physical vapor deposition (PEPVD), sputtering, electric arc spray ( A reduction method characterized in that it is formed using a method selected from the process group of EAS), plasma spray coating (APS, VPS and LPPS) and high velocity flame spraying (HVOF). The base insulating layer (102) consists essentially of Ta ₂ O ₅ and has a base layer thickness of between about 0.1 μm and about 2 μm;
The method of claim 2, wherein the outer insulating layer (104) consists essentially of TiO ₂ and has an outer layer thickness of between about 0.5 μm and about 3 μm. An apparatus for defining a coolant flow path in a nuclear reactor,
A base material (100) having a surface (100a, 100b) that is electrically conductive and configured to define a portion of the coolant flow path;
A substantially continuous base insulating layer (102) formed on the surface;
A conductive outer surface insulating layer (104) formed substantially continuously on the insulating base layer and defining a wetted portion of the coolant flow path ;
It said base insulating layer (102) is _{TiO 2, Ta 2 O 5,} SiO 2, Al 2 O 3, ZrO 2, Nb 2 O 5, SrBi 2, Ta 2 O 3, Y 2 O 3, HfO2, BaO, SrO , SrTiO ₃ , PbTiO _3, and PbZrO ₃ , consisting essentially of a first insulating material and having a base layer thickness between about 0.1 μm and about 2 μm, insulating layer (104) is _{TiO 2, Ta 2 O 5,} SiO 2, Al 2 O 3, ZrO 2, Nb 2 O 5, SrBi 2, Ta 2 O 3, Y 2 O 3, HfO2, BaO, SrO, SrTiO _3, PbTiO ₃ and consists essentially of a second insulating material selected from the group consisting of PbZrO _3, and, to characterized in that it has an outer layer thickness of between about 0.5μm and about 3μm Apparatus.