JPS63188963U - - Google Patents
Info
- Publication number
- JPS63188963U JPS63188963U JP7888487U JP7888487U JPS63188963U JP S63188963 U JPS63188963 U JP S63188963U JP 7888487 U JP7888487 U JP 7888487U JP 7888487 U JP7888487 U JP 7888487U JP S63188963 U JPS63188963 U JP S63188963U
- Authority
- JP
- Japan
- Prior art keywords
- mos transistor
- high voltage
- voltage mos
- transistor
- double diffusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000009792 diffusion process Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7888487U JPS63188963U (OSRAM) | 1987-05-27 | 1987-05-27 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7888487U JPS63188963U (OSRAM) | 1987-05-27 | 1987-05-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63188963U true JPS63188963U (OSRAM) | 1988-12-05 |
Family
ID=30928241
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7888487U Pending JPS63188963U (OSRAM) | 1987-05-27 | 1987-05-27 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63188963U (OSRAM) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52117081A (en) * | 1976-03-29 | 1977-10-01 | Hitachi Ltd | Preparation of mis semiconductor device |
| JPS6016469A (ja) * | 1984-04-13 | 1985-01-28 | Hitachi Ltd | Ｍｉｓ半導体装置の製法 |
-
1987
- 1987-05-27 JP JP7888487U patent/JPS63188963U/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52117081A (en) * | 1976-03-29 | 1977-10-01 | Hitachi Ltd | Preparation of mis semiconductor device |
| JPS6016469A (ja) * | 1984-04-13 | 1985-01-28 | Hitachi Ltd | Ｍｉｓ半導体装置の製法 |