JPS6318858B2 - - Google Patents
Info
- Publication number
- JPS6318858B2 JPS6318858B2 JP55177969A JP17796980A JPS6318858B2 JP S6318858 B2 JPS6318858 B2 JP S6318858B2 JP 55177969 A JP55177969 A JP 55177969A JP 17796980 A JP17796980 A JP 17796980A JP S6318858 B2 JPS6318858 B2 JP S6318858B2
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- layer
- patterned
- sub
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/167—X-ray
- Y10S430/168—X-ray exposure process
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electron Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB7943449A GB2066487B (en) | 1979-12-18 | 1979-12-18 | Alignment of exposure masks |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5698830A JPS5698830A (en) | 1981-08-08 |
| JPS6318858B2 true JPS6318858B2 (show.php) | 1988-04-20 |
Family
ID=10509905
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17796980A Granted JPS5698830A (en) | 1979-12-18 | 1980-12-16 | Method of manufacturing microminiature solidstate device |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4377627A (show.php) |
| JP (1) | JPS5698830A (show.php) |
| DE (1) | DE3046856A1 (show.php) |
| FR (1) | FR2472213A1 (show.php) |
| GB (1) | GB2066487B (show.php) |
| IE (1) | IE50699B1 (show.php) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH045663U (show.php) * | 1990-04-28 | 1992-01-20 |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4407933A (en) * | 1981-06-11 | 1983-10-04 | Bell Telephone Laboratories, Incorporated | Alignment marks for electron beam lithography |
| DE3235064A1 (de) * | 1982-09-22 | 1984-03-22 | Siemens AG, 1000 Berlin und 8000 München | Tunnelkathodenmaske fuer die elektronenlithografie, verfahren zu ihrer herstellung und verfahren zu ihrem betrieb |
| JPS6010727A (ja) * | 1983-06-30 | 1985-01-19 | Toshiba Corp | 位置合わせ方法 |
| US4608112A (en) * | 1984-05-16 | 1986-08-26 | The United States Of America As Represented By The Secretary Of The Air Force | Mask aligner for solar cell fabrication |
| US4547958A (en) * | 1984-05-16 | 1985-10-22 | The United States Of America As Represented By The Secretary Of The Air Force | VMJ Solar cell fabrication process using mask aligner |
| US4690880A (en) * | 1984-07-20 | 1987-09-01 | Canon Kabushiki Kaisha | Pattern forming method |
| GB2180669A (en) * | 1985-09-20 | 1987-04-01 | Phillips Electronic And Associ | An electron emissive mask for an electron beam image projector, its manufacture, and the manufacture of a solid state device using such a mask |
| US4713315A (en) * | 1986-12-09 | 1987-12-15 | Smith David V | Wire tag etching system |
| US4948706A (en) * | 1987-12-30 | 1990-08-14 | Hoya Corporation | Process for producing transparent substrate having thereon transparent conductive pattern elements separated by light-shielding insulating film, and process for producing surface-colored material |
| JP2794793B2 (ja) * | 1989-06-13 | 1998-09-10 | ソニー株式会社 | 露光用マスクの製造方法 |
| JPH0521310A (ja) * | 1991-07-11 | 1993-01-29 | Canon Inc | 微細パタン形成方法 |
| US5382483A (en) * | 1992-01-13 | 1995-01-17 | International Business Machines Corporation | Self-aligned phase-shifting mask |
| JP3334911B2 (ja) * | 1992-07-31 | 2002-10-15 | キヤノン株式会社 | パターン形成方法 |
| WO1994017449A1 (en) * | 1993-01-21 | 1994-08-04 | Sematech, Inc. | Phase shifting mask structure with multilayer optical coating for improved transmission |
| US5418095A (en) * | 1993-01-21 | 1995-05-23 | Sematech, Inc. | Method of fabricating phase shifters with absorbing/attenuating sidewalls using an additive process |
| US5411824A (en) * | 1993-01-21 | 1995-05-02 | Sematech, Inc. | Phase shifting mask structure with absorbing/attenuating sidewalls for improved imaging |
| US5733708A (en) * | 1995-10-02 | 1998-03-31 | Litel Instruments | Multilayer e-beam lithography on nonconducting substrates |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3245794A (en) * | 1962-10-29 | 1966-04-12 | Ihilco Corp | Sequential registration scheme |
| US3607267A (en) * | 1967-10-09 | 1971-09-21 | Motorola Inc | Precision alignment of photographic masks |
| DE1614635A1 (de) * | 1967-10-23 | 1970-03-26 | Siemens Ag | Verfahren zum Herstellen von Fotolackmasken fuer Halbleiterzwecke |
| US3742229A (en) * | 1972-06-29 | 1973-06-26 | Massachusetts Inst Technology | Soft x-ray mask alignment system |
| CS159563B1 (show.php) * | 1972-12-28 | 1975-01-31 | ||
| GB1520925A (en) * | 1975-10-06 | 1978-08-09 | Mullard Ltd | Semiconductor device manufacture |
| DE2600137A1 (de) * | 1976-01-03 | 1977-07-07 | Ernst Prof Dipl Phys Froeschle | Elektronenstrahlbelichtungsverfahren fuer halbleiterbauelemente |
| GB1557064A (en) * | 1976-09-09 | 1979-12-05 | Mullard Ltd | Masks suitable for use in electron image projectors |
| DE2642634A1 (de) * | 1976-09-22 | 1978-03-23 | Siemens Ag | Verfahren zum justieren von belichtungsmasken relativ zu einer substratscheibe |
| DE2708674C3 (de) * | 1977-02-28 | 1980-07-24 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum Justieren einer Belichtungsmaske relativ zu einer Substratscheibe bei der Fotolithografie |
-
1979
- 1979-12-18 GB GB7943449A patent/GB2066487B/en not_active Expired
-
1980
- 1980-12-12 DE DE19803046856 patent/DE3046856A1/de active Granted
- 1980-12-15 FR FR8026537A patent/FR2472213A1/fr active Granted
- 1980-12-15 IE IE2623/80A patent/IE50699B1/en unknown
- 1980-12-15 US US06/216,340 patent/US4377627A/en not_active Expired - Fee Related
- 1980-12-16 JP JP17796980A patent/JPS5698830A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH045663U (show.php) * | 1990-04-28 | 1992-01-20 |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2066487A (en) | 1981-07-08 |
| IE802623L (en) | 1981-06-18 |
| GB2066487B (en) | 1983-11-23 |
| FR2472213B1 (show.php) | 1983-10-07 |
| DE3046856C2 (show.php) | 1992-03-05 |
| US4377627A (en) | 1983-03-22 |
| DE3046856A1 (de) | 1981-09-03 |
| FR2472213A1 (fr) | 1981-06-26 |
| IE50699B1 (en) | 1986-06-25 |
| JPS5698830A (en) | 1981-08-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6318858B2 (show.php) | ||
| US5275896A (en) | Single-alignment-level lithographic technique for achieving self-aligned features | |
| JPS6323657B2 (show.php) | ||
| KR100289373B1 (ko) | 리쏘그래피용 마스크 및 그 제조방법 | |
| EP0543569B1 (en) | Fabrication of phase-shifting lithographic masks | |
| US5300378A (en) | Method of producing a phase shifting mask | |
| US5589303A (en) | Self-aligned opaque regions for attenuating phase-shifting masks | |
| JP2641362B2 (ja) | リソグラフィー方法および位相シフトマスクの作製方法 | |
| US4117301A (en) | Method of making a submicrometer aperture in a substrate | |
| US6096459A (en) | Method for repairing alternating phase shifting masks | |
| JPH0219970B2 (show.php) | ||
| US6630408B1 (en) | Self alignment process to fabricate attenuated shifting mask with chrome border | |
| JPH09218500A (ja) | レジストパターンの作製方法 | |
| US5851734A (en) | Process for defining resist patterns | |
| JPH0653106A (ja) | 微細レジストパターンの形成方法 | |
| JP3395102B2 (ja) | 電子線描画用ステンシルマスク | |
| JPS59141230A (ja) | パタ−ン形成方法 | |
| EP0104235A4 (en) | METHOD OF FORMING A HYBRID LITHOGRAPHIC PROTECTION MATERIAL WITH ELECTRONIC / OPTICAL RADIUS. | |
| KR100219399B1 (ko) | 반도체용 포토마스크제조방법 | |
| JPH0822114A (ja) | 位相反転マスクの製造方法 | |
| KR0151228B1 (ko) | 고립된 다수의 패턴을 형성하기 위한 포토마스크 | |
| JPS6222262B2 (show.php) | ||
| JPH04318852A (ja) | レジスト・パターン形成方法 | |
| JPS627688B2 (show.php) | ||
| JPS6156867B2 (show.php) |