JPS63187328U - - Google Patents

Info

Publication number
JPS63187328U
JPS63187328U JP7913187U JP7913187U JPS63187328U JP S63187328 U JPS63187328 U JP S63187328U JP 7913187 U JP7913187 U JP 7913187U JP 7913187 U JP7913187 U JP 7913187U JP S63187328 U JPS63187328 U JP S63187328U
Authority
JP
Japan
Prior art keywords
processing chamber
electrode
plasma etching
etching apparatus
sample
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7913187U
Other languages
English (en)
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP7913187U priority Critical patent/JPS63187328U/ja
Publication of JPS63187328U publication Critical patent/JPS63187328U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
JP7913187U 1987-05-25 1987-05-25 Pending JPS63187328U (enrdf_load_stackoverflow)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7913187U JPS63187328U (enrdf_load_stackoverflow) 1987-05-25 1987-05-25

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7913187U JPS63187328U (enrdf_load_stackoverflow) 1987-05-25 1987-05-25

Publications (1)

Publication Number Publication Date
JPS63187328U true JPS63187328U (enrdf_load_stackoverflow) 1988-11-30

Family

ID=30928709

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7913187U Pending JPS63187328U (enrdf_load_stackoverflow) 1987-05-25 1987-05-25

Country Status (1)

Country Link
JP (1) JPS63187328U (enrdf_load_stackoverflow)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59135730A (ja) * 1983-01-24 1984-08-04 Hitachi Ltd 表面改質装置
JPS61174640A (ja) * 1985-01-29 1986-08-06 Fujitsu Ltd ドライエツチング方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59135730A (ja) * 1983-01-24 1984-08-04 Hitachi Ltd 表面改質装置
JPS61174640A (ja) * 1985-01-29 1986-08-06 Fujitsu Ltd ドライエツチング方法

Similar Documents

Publication Publication Date Title
EP0474244A3 (en) Plasma processing method
JPS63187328U (enrdf_load_stackoverflow)
US5144199A (en) Microwave discharge light source device
JPH03261062A (ja) プラズマ極微量元素質量分析装置
JPS5647572A (en) Etching method of indium oxide film
JPS647623A (en) Cleaning method for si surface by dry type
JPS60153127A (ja) プラズマエツチング装置
JPH0429220B2 (enrdf_load_stackoverflow)
JP3158911B2 (ja) 誘電体バリア放電ランプ装置
JPH079884B2 (ja) 光励起プロセス装置
JPH0263535U (enrdf_load_stackoverflow)
JPS61150339A (ja) ドライエツチング方法
JPS6237918U (enrdf_load_stackoverflow)
JPS6134496Y2 (enrdf_load_stackoverflow)
JPS60218846A (ja) ドライエツチング装置
JPS62128629U (enrdf_load_stackoverflow)
JPH0388258U (enrdf_load_stackoverflow)
JPS6464224A (en) Etching method
JPH0281036U (enrdf_load_stackoverflow)
JPH0263531U (enrdf_load_stackoverflow)
JPS61114532A (ja) プラズマ処理装置
JPS6276631A (ja) 光励起エツチング装置
JPH07105347B2 (ja) 光化学気相成長方法
JPH0461228A (ja) プラズマ反応装置
JPS6396924A (ja) 半導体装置の製造方法