JPS63184941A - Magneto-optical disk - Google Patents
Magneto-optical diskInfo
- Publication number
- JPS63184941A JPS63184941A JP1638287A JP1638287A JPS63184941A JP S63184941 A JPS63184941 A JP S63184941A JP 1638287 A JP1638287 A JP 1638287A JP 1638287 A JP1638287 A JP 1638287A JP S63184941 A JPS63184941 A JP S63184941A
- Authority
- JP
- Japan
- Prior art keywords
- film
- magneto
- optical recording
- optical disk
- recording medium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000001681 protective effect Effects 0.000 claims abstract description 13
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 12
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 11
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 10
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- 229910052796 boron Inorganic materials 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 9
- 229910052689 Holmium Inorganic materials 0.000 claims description 6
- 229910052771 Terbium Inorganic materials 0.000 claims description 6
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 6
- 229910052727 yttrium Inorganic materials 0.000 claims description 6
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 229910052745 lead Inorganic materials 0.000 claims description 3
- -1 T is H f Inorganic materials 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 7
- 239000001301 oxygen Substances 0.000 abstract description 7
- 229910052760 oxygen Inorganic materials 0.000 abstract description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 6
- 239000002184 metal Substances 0.000 abstract description 6
- 229910052751 metal Inorganic materials 0.000 abstract description 6
- 230000007774 longterm Effects 0.000 abstract description 5
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 3
- 230000003647 oxidation Effects 0.000 abstract description 3
- 238000007254 oxidation reaction Methods 0.000 abstract description 3
- 229910044991 metal oxide Inorganic materials 0.000 abstract 2
- 150000004706 metal oxides Chemical class 0.000 abstract 2
- 239000000758 substrate Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910052793 cadmium Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920000306 polymethylpentene Polymers 0.000 description 1
- 239000011116 polymethylpentene Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、光磁気ディスク、特に新規な誘電体膜を有す
る光磁気ディスクに関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a magneto-optical disk, and particularly to a magneto-optical disk having a novel dielectric film.
光磁気記録媒体層に光ビームを照射して情報の記録、再
生及び消去を行なう光磁気ディスクは、凹き換え可能な
情報を高密度に記録することができるので、各方面への
広い用途が見込まれている。Magneto-optical disks, in which information is recorded, reproduced, and erased by irradiating a light beam onto a magneto-optical recording medium layer, can record rewritable information at high density, so they have wide applications in various fields. It is expected.
この種の光磁気ディスクの構造として、従来、ガラスや
ポリカーポ２−ト、アクリル、エポキシ、ポリメチルペ
ンテンなどの透明高分子材で形成される透明基板上に、
第１層として後記光磁気記録媒体層を保護すると共に情
報の読み出し光の内の光磁気記録媒体層で反射した光を
内部で多重反射（干渉）させ読み出し用反射光の見かけ
のカー回転角を増加させ再生Ｃ／Ｎを向上させる（エン
ハンスメント効果）、５ｉＯｚ、Ｓｉ○、Ｃｅ０ｇなど
の誘電体膜、第２層としてＴｂ−Ｆｅ系、Ｔｂ−Ｆｅ−
ｃｏ系、Ｇｄ−Ｔｂ−Ｆｅ系などの膜厚を３００人より
厚くした光磁気記録媒体層、及び第３層として前記光磁
気記録媒体層を保護する、５ｉＣ）ｚ、ｓｉ○、ＣａＣ
２などの誘電体膜若しくはＡｌ、Ｂｉ、Ｐｂなとの金属
膜が形成されてなるもの（特開昭５９− ＋−１００５
６号公報、特開昭５９−１２１３６８号公報）や、上記
透明基板上に、第１Ｎとして後記光磁気記録媒体層を保
護する誘電体膜、第２層として膜厚を３００Å以下とし
た光磁気記録媒体層、第３層として前記光磁気記録媒体
層を保護すると共にこの膜を透過した情報の読み出し光
をこの膜と後記金属膜との間で多重反射（干渉）させ読
み出し用反射光の見かけのファラデー回転角を増加させ
再生Ｃ／Ｎを向上させる（エンハンスメント効果）誘電
体膜、及び第４層として金属膜が形成されてなるもの（
特開昭６０−１２９９５１号公報、特開昭６０−２０９
９４７号公報）などが、充分実用化に値する光磁気ディ
スクという観点から最も有望なものとして知られている
。Conventionally, this type of magneto-optical disk has a structure on a transparent substrate made of a transparent polymer material such as glass, polycarbonate, acrylic, epoxy, or polymethylpentene.
As the first layer, it protects the magneto-optical recording medium layer, which will be described later, and internally causes multiple reflections (interference) of the light reflected by the magneto-optical recording medium layer, which is part of the light for reading information, and changes the apparent Kerr rotation angle of the reflected light for reading. dielectric film such as 5iOz, Si○, Ce0g, etc., to improve reproduction C/N (enhancement effect), Tb-Fe system, Tb-Fe-
A magneto-optical recording medium layer made of Co-based, Gd-Tb-Fe-based, etc. thicker than 300 mm, and a third layer that protects the magneto-optical recording medium layer, 5iC)z, si○, CaC
A dielectric film such as 2 or a metal film such as Al, Bi, Pb (Japanese Unexamined Patent Publication No. 59-1005)
6, JP-A No. 59-121368), a dielectric film for protecting the magneto-optical recording medium layer described later as the 1N layer, and a magneto-optic film having a thickness of 300 Å or less as the second layer on the transparent substrate. The recording medium layer serves as a third layer to protect the magneto-optical recording medium layer, and multiple-reflects (interferences) the information readout light that has passed through this film between this film and the metal film described below, thereby increasing the appearance of the readout reflected light. A dielectric film that increases the Faraday rotation angle and improves the reproduction C/N (enhancement effect), and a metal film as the fourth layer (
JP-A-60-129951, JP-A-60-209
No. 947) is known as the most promising one from the viewpoint of a magneto-optical disk sufficiently worthy of practical use.
しかしながら、前記構造の光磁気ディスクにおいては、
前記記録情報のドロップアウトの防止及び再生Ｃ／Ｎ比
の向上が完全には達成されていなかった。However, in the magneto-optical disk with the above structure,
Prevention of dropout of recorded information and improvement of reproduction C/N ratio have not been completely achieved.
本発明の目的は、これらの問題点を解消し、長期の耐久
性、光磁気記録再生特性の何れもが優れた充分実用化に
値する光磁気ディスクを提供することにある。An object of the present invention is to solve these problems and provide a magneto-optical disk that is excellent in both long-term durability and magneto-optical recording and reproducing characteristics and is worthy of practical use.
（問題点を解決するための手段及び作用）本発明による
光磁気ディスクは、干渉膜と該干渉膜以外の保護膜とを
備えた光磁気ディスクにおいて、上記干渉膜としての誘
電体膜の組成がＡＯａ、ＤＯａ又はＡｘＤ１−、Ｏ，（
但し、ＡはＺｒ又はＣｒ、ＤはＨｆ又はＺｎ、ａ≧０．
５．０＜ｘ＜１）の何れかである第１メンバー、ＥＯｂ
（但し、ＥはＣｄ、Ｔｂ、 Ｄｙ、Ｈｏ、Ｙｂ又はＹの
何れか、０．６≦ｂ≦１．３）である、第２メンバ＋、
ＦＸ−Ｚ ｒ ＋−・Ｏｃ（但し、ＦはＹ又はＡＡ
。(Means and effects for solving the problems) A magneto-optical disk according to the present invention includes an interference film and a protective film other than the interference film, in which the composition of the dielectric film as the interference film is AOa, DOa or AxD1-, O, (
However, A is Zr or Cr, D is Hf or Zn, and a≧0.
The first member, EOb, which is either 5.0<x<1)
(However, E is any one of Cd, Tb, Dy, Ho, Yb or Y, 0.6≦b≦1.3), the second member +,
FX-Z r +-・Oc (However, F is Y or AA
.
０＜ｘ’＜１．０．６≦ｃ≦１．９）である第３メンバ
ー、ＧＮ、、ＨＮｄ又はＧ ｘ’ Ｈｌ−Ｘ・Ｎｄ （
但し、ＧはＺｒ、Ｂ又はＣｒの何れか、ＨはＨ≠Ａ＃又
はＴｉの何れか、Ｑ ＜ ｘ” ＜ ｌ、０．４≦ｄ≦
０゜９）の何れかである第４メンバー、Ｔａｇ、。0<x'<1.0.6≦c≦1.9), the third member GN, , HNd or G x' Hl−X・Nd (
However, G is either Zr, B or Cr, H is either H≠A# or Ti, Q < x” < l, 0.4≦d≦
The fourth member, Tag, which is either 0°9).
ＮｂＯ，又はＴ ａ ｙＮ ｂ １−ｙｏ、（但し、１
．５≦ｅ ＜ ２．５．０〈ｙく１）の何れかである第
５メンバー、 Ｂ ｉ、ｓｌ ＯＨ（但し、■はＧ ｅ
＋ Ｓ ＋ 。NbO, or T ayN b 1-yo, (however, 1
．． The fifth member, which is either 5≦e<2.5.0<y×1), B i, sl OH (however, ■ is G e
+S+.
Ｔｉ、Ｐｂ、Ｚｎ、Ａｌ、Ｂのうちの１種以上、１１≦
ｙ′≦１３．１６≦ｆ≦２３）である第６メンバー、Ｌ
ｉＮｂ０ｗ 、ＬｉＴａ０．又はＬ ｉ Ｎ ｂ、”Ｔ
ａ 、−ｙ・＋ｏ、 （但し、１．５≦ｇ＜３．０
＜３、０＜ｙ″＜１）の何れかである第７メンバー。One or more of Ti, Pb, Zn, Al, B, 11≦
y'≦13.16≦f≦23), the sixth member, L
iNb0w, LiTa0. Or L i N b, “T
a, -y・+o, (1.5≦g<3.0
<3, 0<y″<1).
Ａｓｓ ５ｅｔ−ｔ （但し、０．２≦２≦０．８）
である第８メンバーからなる群のうちの一つのメンバー
で表わされ、且つ上記保護膜としての誘電体膜の組成が
、ＪＯ，、ＬＯ，又はＪ、Ｌ、−、○ｈ （但し、Ｊは
Ｚｒ又はＣｒ５ＬはＩｆ又はＺｎ５ｈ≧０．５、Ｑ＜ｓ
＜１）の何れかである第１メンバー。Ass 5et-t (However, 0.2≦2≦0.8)
is represented by one member of the group consisting of the eighth member, and the composition of the dielectric film as the protective film is JO,, LO, or J, L, -, ○h (however, J is Zr or Cr5L is If or Zn5h≧0.5, Q<s
The first member that is any of <1).
Ｍｏ２（但し、ＭはＣｄ、Ｔｂ、Ｄｙ、Ｈｏ。Mo2 (where M is Cd, Tb, Dy, Ho.
Ｙｂ又はＹの何れか、０．６≦ｋ≦１．３）である第２
メンバー＋ Ｑｓ’ Ｚ ｒ Ｉ−ｓ’ ＯＪ （但
し、ＱはＹ又はＡＪ、Ｑ＜ｓ’＜１．０．６≦２≦１．
９）である第３メンバー、ＲＮｍ、ＴＮｍ又はＲ、−Ｔ
、−、−Ｎ１１（但し、ＲはＺｒ、Ｂ又はＣｒの何れ
か、ＴはＨ≠／ｌ！又はＴｉの何れか、ＱＣｓ ＃＜
１．０．４≦ｍ≦０．９）の何れかである第４メンバー
。Either Yb or Y, 0.6≦k≦1.3)
Member + Qs' Z r I-s' OJ (However, Q is Y or AJ, Q<s'<1.0.6≦2≦1.
9), the third member RNm, TNm or R, -T
, -, -N11 (where R is Zr, B or Cr, T is H≠/l! or Ti, QCs #<
1.0.4≦m≦0.9).
’ｒａｏ、、Ｎｂ０ｎ又はＴ ａ ＬＮ ｂ Ｉ−ｔｏ
ｌｌ （但し、１．５≦ｎ ＜ ２．５．０＜ｔ＜１
）の何れかである第５メンバー、 Ｂ ｉｔ・ｖ Ｏｐ
（但し、ＶはＧｅ。'rao,, Nb0n or T a LN b I-to
ll (However, 1.5≦n<2.5.0<t<1
), the fifth member who is any of B it・v Op
(However, V is Ge.
Ｓｉ、Ｔｉ、Ｐｂ、Ｚｎ、Ａｎ、Ｂのうちの１種以上、
１１≦ｔ′≦１３．１６≦ｐ≦２３）である第６メンバ
ー、ＬｉＮｂ０Ｑ、ＬｉＴａ０．又はＬｉ Ｎ ｂｚ・
Ｔ ａ ＋−ｔ” Ｏｆｌ （但し、１．５≦ｑ＜３
．０＜ｔ’＜１）の何れかである第７メンバー。One or more of Si, Ti, Pb, Zn, An, B,
11≦t′≦13.16≦p≦23), LiNb0Q, LiTa0. Or Li N bz・
T a +-t” Ofl (However, 1.5≦q<3
．． The seventh member is any one of 0<t'<1).
Ａ ３ｕ Ｓ ＠＋−ｕ （但し、０．２≦Ｕ≦０．
８）である第８メンバーからなる群の一つのメンバーで
表わされる（但し、干渉膜を構成する第１メンバー（ｉ
＝１〜８）の１≠該干渉膜以外の保護膜を構成する第１
メンバー（ｊ−１〜８）のｊ）ことを特徴とするもので
ある。A 3u S @+-u (However, 0.2≦U≦0.
8) (provided that the first member (i
= 1 to 8) ≠ the first component constituting the protective film other than the interference film
j) of members (j-1 to j-8).
本発明において、前記干渉膜としての誘電体膜の組成は
、上述の如＜、ＡＯａ、ＤＯａ又はＡ−ＤＩ−−０−（
但し、ＡはＺｒ又はＣｒ、ＤはＨｆ又はＺ ｎ ％ ａ
≧０．５、Ｏ＜ｘ＜１）の何れかである第１メンバー、
ＥＯｂ （但し、ＥはＧｄ。In the present invention, the composition of the dielectric film as the interference film is as described above, AOa, DOa or A-DI--0-(
However, A is Zr or Cr, D is Hf or Z n % a
≧0.5, a first member which is either O<x<1),
EOb (However, E is Gd.
Ｔｂ、 Ｄｙ、Ｈｏ、Ｙｂ又はＹの何れか、０．６≦
ｂ≦１．３）である第２メンバー＋ Ｆ Ｘ’ Ｚ
’ Ｉ−に’ ＯＣ（但し、ＦはＹ又はＡ６、Ｑ＜ｘ’
＜ｌ、０．６≦ｃ≦１．９）である第３メンバー、ｃＮ
ａ 、ＨＮｄ又はＧＸ−Ｈｌ−Ｘ・・Ｎ４ （但し、Ｇ
はＺｒ、Ｂ又はＣｒの何れか、ＨはＨ≠Ａｎ又はＴｉの
何れか、Ｑ’ ＜ Ｘ ” ＜ ｌ、０．４≦ｄ≦０．
９）の何れかである第４メンバー、Ｔａｋｅ 、Ｎｂ０
ａ又はＴａ、Ｎｂ Ｉ−ｙｏ −（但し、１．５≦ｅ
＜ ２．５．０＜ｙ＜１）の何れかである第５メンバー
、Ｂｉ、・ＩＯｆ （但し、■はＧｅ、Ｓｉ、Ｔｉ、
Ｐｂ、Ｚｎ、Ａｌ。Any of Tb, Dy, Ho, Yb or Y, 0.6≦
b≦1.3) + F X' Z
'I-to' OC (However, F is Y or A6, Q<x'
<l, 0.6≦c≦1.9), the third member, cN
a, HNd or GX-Hl-X...N4 (However, G
is either Zr, B or Cr, H is either H≠An or Ti, Q'<X''<l, 0.4≦d≦0.
9) The fourth member, Take, Nb0
a or Ta, Nb I-yo - (however, 1.5≦e
< 2.5.0 < y < 1), Bi, ・IOf (where ■ is Ge, Si, Ti,
Pb, Zn, Al.
Ｂのうちの１種以上、１１≦ｙ゛≦１３．１６≦ｆ≦２
３）である第６メンバー、ＬｉＮｂ０．。One or more of B, 11≦y゛≦13.16≦f≦2
3), the sixth member, LiNb0. .
ＬｉＴａｏ、又はＬ ｉＮ ｂ、ｓ＋Ｔ ａ 、−、・
Ｏ，（但し、１．５≦ｇ＜３．０＜３、０＜ｙ″＜１＞
の何れかである第７メンバー、Ａ ３＋１ Ｓ ｅ＋−
ｍ （但し、０．２≦２≦０．８）である第８メンバ
ーからなる群のうちの一つのメンバーで表わされる必要
がある。それは、この成分がａ、ｂ、ｃ、ｄ、ｅ、≠ｇ
の幅広い範囲で安定であるため外部から酸素が混入して
もこれを吸収し、光磁気記録媒体層の酸化を防止する保
護膜としての効果が公知の誘電体膜に比べて大きいため
である。又、特にＢｉｙ・１０．。LiTao, or LiN b, s+T a , -, ・
O, (however, 1.5≦g<3.0<3, 0<y″<1>
The seventh member, which is either A 3+1 S e+-
m (where 0.2≦2≦0.8), it is necessary to represent one member of the group consisting of the eighth member. It means that these components are a, b, c, d, e, ≠g
This is because it is stable over a wide range of temperatures, so even if oxygen is mixed in from the outside, it absorbs it, and is more effective as a protective film for preventing oxidation of the magneto-optical recording medium layer than known dielectric films. Also, especially Biy・10. .
Ｌ １Ｎｂｏ、 、 Ｌ １Ｔａｏ、 、
Ｌ ｉ Ｎｂｙ”Ｔａ＋−ｙ”０９又はＡ Ｓ
＊ Ｓ ｅ １−ｔの何れかの場合は、読み出しに必要
な反射率（情報の強さ）を確保しつつも再生Ｃ／Ｎ （
情報のコントラスト）を向上させるエンハンスメント効
果を有効に利用するのに最適な屈折率を有しており、干
渉膜としての効果が公知の誘電体膜に比べて大きいため
である。L 1Nbo, , L 1Tao, ,
L i Nby”Ta+-y”09 or A S
* In the case of S e 1-t, the reproduction C/N (
This is because it has an optimal refractive index for effectively utilizing the enhancement effect that improves the contrast of information, and its effect as an interference film is greater than that of known dielectric films.
ａ−Ｈに条件が設定されるのは、次の理由による。即ち
、下限未満では誘電体膜中に金属が形成されて均質で透
明な膜が形成されず、一方上限を超えると酸素又は窒素
が過剰となり、この過剰の酸素又は窒素が光磁気記録媒
体層内に混入して特性を劣化させる。ｙ′の条件設定も
同様である。The reason why conditions are set for aH is as follows. That is, below the lower limit, metal is formed in the dielectric film and a homogeneous and transparent film cannot be formed.On the other hand, when the upper limit is exceeded, oxygen or nitrogen becomes excessive, and this excess oxygen or nitrogen forms in the magneto-optical recording medium layer. It mixes with the product and deteriorates its characteristics. The conditions for y' are set in the same way.
２に条件が設定されるのは、次の理由による。The reason why condition 2 is set is as follows.
即ち、２が０．２未満又は０．８より大きいときは結晶
化してしまって安定な非晶質が形成されず粒界ノイズを
生じたりして特性の劣化を引き起こす。That is, when 2 is less than 0.2 or greater than 0.8, crystallization occurs and stable amorphous is not formed, resulting in grain boundary noise and deterioration of characteristics.
更に、この誘電体膜は、膜厚が２００〜１２００人に形
成されるのが望ましい、ｌ！厚が２００人未満では、ピ
ンホールなどによる膜の不均一性が増し光磁気記録媒体
層の酸化による情報のドロップアウトが生じてこの媒体
層を保護する効果が不充分である。一方、膜厚が１２０
０人を超えると、膜厚のバラツキが増大し、エンハンス
メント効果を有効に利用できなくなる。Furthermore, this dielectric film is desirably formed to have a thickness of 200 to 1200 mm. If the thickness is less than 200 mm, non-uniformity of the film due to pinholes and the like increases, information dropout occurs due to oxidation of the magneto-optical recording medium layer, and the effect of protecting this medium layer is insufficient. On the other hand, the film thickness is 120
If the number exceeds 0, the variation in film thickness increases and the enhancement effect cannot be used effectively.
干渉膜以外の保護膜としての誘電体膜の組成は、上述の
如く、Ｊｏｂ 、ＬＯ，又はＪ、Ｌ、−、ｏｈ（但し、
ＪはＺｒ又はＣｒ、ＬはＨｆ又はＺ ｎ ｓｈ≧０．５
．０＜ｓ＜１）の何れかである第１メンバー、ＭＯｋ（
但し、ＭはＧｄ、Ｔｂ、［）ｙ。The composition of the dielectric film as a protective film other than the interference film is Job, LO, or J, L, -, oh (however,
J is Zr or Cr, L is Hf or Z n sh≧0.5
．． The first member, MOk(
However, M is Gd, Tb, [)y.
Ｈｏ、Ｙｂ又はＹの何れか、０．６≦ｋ≦１，３）であ
る第２メンバー、 Ｑｓ’ Ｚ ｒ ＋−ｓ’ ０２．
、 （但し、ＱはＹ又はＡ１、Ｏ＜Ｓ”＜１．０．６
≦ｌ≦１．９）である第３メンバー、ＲＮ、、ＴＮい又
はＲ，−Ｔ１１−Ｎ＝ （但し、ＲはＺｒ、Ｂ又はＣ
ｒの何れか、ＴはＨ≠Ａｌ又はＴｉの何れか、０くｓ＃
〈１．０．４≦ｍ≦０．９）の何れかである第４メンバ
ー、Ｔ ａ Ｏｎ 、Ｎ ｂ Ｏｎ又はＴ ａ ｔ Ｎ
ｂ ＋−ｔＯ，（但し、１．５≦、１＜２．５、Ｑ＜
ｔ＜１）の何れかである第５メ７バ 、Ｂｉｔ□ＶＯｐ
（但し、ＶはＧｅ、Ｓｉ、Ｔｉ、Ｐｂ、Ｚｎ、Ａｌ
、！、Ｂのうちの１種以上、１１≦ｔ′≦１３．１６≦
ｐ≦２３）である第６メンバー、ＬｉＮｂ０９゜Ｌ ｉ
Ｔ ａ Ｏｑ又はＬｉ Ｎ ｂｔ−Ｔａ＋−ｔ”Ｏａ
（但し、１．５≦ｑ＜３、Ｑ ＜ ｔ、 ” ＜
１ ）の何れかである第７メンバー、 Ａ Ｓｕ Ｓ
ｅ＋−ｕ （但し、０．２≦Ｕ≦０．８）である第８
メンバーからなる群の一つのメンバーで表わされる必要
がある。それは、この成分は、保護膜としての効果が公
知の誘電体膜に比べて大きいからである。その理由は、
前記干渉膜としての保護膜の場合と同様である。又、上
記組成に条件が設定されるのも同様である。a second member of Ho, Yb or Y, 0.6≦k≦1,3), Qs' Z r +-s' 02.
, (However, Q is Y or A1, O<S"<1.0.6
≦l≦1.9), the third member RN, TN or R, -T11-N= (However, R is Zr, B or C
Any of r, T is either H≠Al or Ti, 0xs#
A fourth member that is any of <1.0.4≦m≦0.9), T a On , N b On or T at N
b +-tO, (1.5≦, 1<2.5, Q<
t<1), Bit□VOp
(However, V is Ge, Si, Ti, Pb, Zn, Al
,! , one or more of B, 11≦t′≦13.16≦
p≦23), the sixth member, LiNb09°L i
T a Oq or Li N bt-Ta+-t”Oa
(However, 1.5≦q<3, Q<t, ”<
1) The 7th member who is any of A Su S
The eighth which is e+-u (however, 0.2≦U≦0.8)
Must be represented by one member of a group of members. This is because this component has a greater effect as a protective film than known dielectric films. The reason is,
This is the same as in the case of the protective film as the interference film. Further, conditions are similarly set for the above composition.
そして、この保護膜の膜厚は２００Å以上に形成される
の、が望ましい。膜厚が、２００人未満では、ピンホー
ル等による膜の不均一性が増し光磁気記録媒体膜を保護
する効果が充分得られない。The thickness of this protective film is preferably 200 Å or more. If the film thickness is less than 200, non-uniformity of the film due to pinholes etc. will increase and a sufficient effect of protecting the magneto-optical recording medium film will not be obtained.
又、本発明において、干渉膜を構成する第１メンバーの
１≠該干渉膜以外の保護膜を構成する第１メンバーのｊ
としたのは、既にｉ＝Ｊの光磁気ディスクの発明を本出
則人は本発明と同様の目的を達成できるものとして出願
したためである。尚、本発明における各膜は、高周波ス
パッタリング。Further, in the present invention, 1 of the first member constituting the interference film≠j of the first member constituting the protective film other than the interference film
The reason for this is that the inventor has already filed an application for the invention of a magneto-optical disk with i=J as a device capable of achieving the same object as the present invention. In addition, each film in the present invention is formed by high frequency sputtering.
直流スパッタリング、真空蒸着などにより形成すること
ができる。It can be formed by direct current sputtering, vacuum evaporation, or the like.
以下、本発明の実施例を比較例、従来例と共に説明する
。厚さ１．２Ｎのポリカーボネートの溝付透明基板上に
高周波スパッタリング法によりまず第１層を、次に第２
層として膜厚７５０人でＴ ｂｏ、ｚｙＦ ｅｏ、ｂｓ
ｃ Ｏｏ、ｏｅなる組成ノ光ｍ 気記録媒体層を、更に
第３ＦＷを形成した。この際の第１層及び第３Ｎの成分
１組成及び膜厚を下記表に示す。Examples of the present invention will be described below along with comparative examples and conventional examples. First, the first layer was deposited on a grooved transparent substrate of polycarbonate with a thickness of 1.2N by high frequency sputtering method, and then the second layer was deposited on the substrate.
T bo, zyF eo, bs with a film thickness of 750 as a layer
A recording medium layer having a composition of Oo and oe was formed, and a third FW was further formed. The composition and film thickness of the first layer and the third N component are shown in the table below.
又、このようにして得られた光磁気ディスクに対して、
記録周波数２ＭＨｚ、 レーザーパワー４ｍＷで記録
し、再生レーザーパワー１ｍｗで再生した。そして、再
生した初期Ｃ／Ｎを、第１ＮとしてＳｉＯを用いた場合
（試験磁１、従来例）に対する相対値Ａで、及び光磁気
ディスクを温度６０℃、相対湿度９０％の雰囲気中に１
０００時間暴露した後に再生した経時Ｃ／Ｎを、夫々の
試験における再生した初期Ｃ／Ｈに対する相対値Ｂで下
記表に示す。Moreover, for the magneto-optical disk obtained in this way,
Recording was performed with a recording frequency of 2 MHz and a laser power of 4 mW, and reproduction was performed with a reproduction laser power of 1 mW. Then, the reproduced initial C/N was set at a relative value A to the case where SiO was used as the first N (test magnet 1, conventional example), and the magneto-optical disk was placed in an atmosphere with a temperature of 60°C and a relative humidity of 90%.
The regenerated C/N after 000 hours of exposure is shown in the table below as a relative value B to the regenerated initial C/H in each test.
上記表から明らかように、何れの実施例においても、初
期Ｃ／Ｎ相対値が１．０以上で、且つ経時Ｃ／Ｎ相対値
が０．９５より大きい。即ち、非常に高い光磁気記録再
生特性を有し、長期の耐久性に優れた光磁気ディスクが
得られている。しかし、従来例及び比較例では、何れも
、光磁気記録再生特性、長期の耐久性共に優れた光磁気
ディスクは得られていない。As is clear from the above table, in all Examples, the initial relative C/N value was 1.0 or more, and the relative C/N value over time was greater than 0.95. That is, a magneto-optical disk having very high magneto-optical recording and reproducing characteristics and excellent long-term durability has been obtained. However, in both the conventional example and the comparative example, a magneto-optical disk excellent in both magneto-optical recording and reproducing characteristics and long-term durability has not been obtained.
本発明は、以上説明した各実施例の構成に限るものでは
なく、例えば、第３層としての誘電体膜若しくは金属膜
の上に更に紫外線硬化樹脂を塗布した構成のもの、前記
実施例の構成の光磁気ディスクを対向させスペーサによ
り対向空間を形成し、この空間内に不活性ガスを充填し
た構成のものなどが実現可能である。The present invention is not limited to the configurations of the embodiments described above, but includes, for example, a configuration in which an ultraviolet curing resin is further applied on a dielectric film or a metal film as a third layer, and the configuration of the embodiments described above. It is possible to realize a configuration in which two magneto-optical disks face each other to form a facing space using a spacer, and this space is filled with an inert gas.
以上詳細に説明したように、本発明による光磁気ディス
クは、非常に高い光磁気記録再生特性を有し、長期の耐
久性に優れているという重要な利点を有している。As described above in detail, the magneto-optical disk according to the present invention has the important advantages of having extremely high magneto-optical recording and reproducing characteristics and excellent long-term durability.
Claims (1)
クにおいて、上記干渉膜としての誘電体膜の組成がＡＯ
＿ａ、ＤＯ＿ａ又はＡ＿ｘＤ＿１＿−＿ｘＯ＿ａ（但し
、ＡはＺｒ又はＣｒ、ＤはＨｆ又はＺｎ、ａ≧０．５、
０＜ｘ＜１）の何れかである第１メンバー、ＥＯ＿ｂ（
但し、ＥはＧｄ、Ｔｂ、Ｄｙ、Ｈｏ、Ｙｂ又はＹの何れ
か、０．６≦ｂ≦１．３）である第２メンバー、Ｆ＿ｘ
′Ｚｒ＿１＿−＿ｘ′Ｏ＿ｃ（但し、ＦはＹ又はＡｌ、
０＜ｘ′＜１、０．６≦ｃ≦１．９）である第３メンバ
ー、ＧＮ＿ｄ、ＨＮ＿ｄ又はＧ＿ｘ″Ｈ＿１＿−＿ｘ″
Ｎ＿ｄ（但し、ＧはＺｒ、Ｂ又はＣｒの何れか、ＨはＨ
ｆ、Ａｌ又はＴｉの何れか、０＜ｘ″＜１、０．４≦ｄ
≦０．９）の何れかである第４メンバー、ＴａＯ＿ｅ、
ＮｂＯ＿ｅ又はＴａ＿ｙＮｂ＿１＿−＿ｙＯｅａ（但し
、１．５≦ｅ＜２．５、０＜ｙ＜１）の何れかである第
５メンバー、Ｂｉ＿ｙ′ＩＯ＿ｆ（但し、ＩはＧｅ、Ｓ
ｉ、Ｔｉ、Ｐｂ、Ｚｎ、Ａｌ、Ｂのうちの１種以上、１
１≦ｙ′≦１３、１６≦ｆ≦２３）である第６メンバー
、ＬｉＮｂＯ＿ｇ、ＬｉＴａＯ＿ｇ又はＬｉＮｂ＿ｙ″
Ｔａ＿１＿−＿ｙ″Ｏ＿ｇ（但し、１．５≦ｇ＜３、０
＜ｙ″＜１）の何れかである第７メンバー、Ａｓ＿ｚＳ
ｅ＿１＿−＿ｚ（但し、０．２≦ｚ≦０．８）である第
８メンバーからなる群のうちの一つのメンバーで表わさ
れ、且つ上記保護膜としての誘電体膜の組成が、ＪＯ＿
ｈ、ＬＯ＿ｈ又はＪ＿ｓＬ＿１＿−＿ｓＯ＿ｈ（但し、
ＪはＺｒ又はＣｒ、ＬはＨｆ又はＺｎ、ｈ≧０．５、０
＜ｓ＜１）の何れかである第１メンバー、ＭＯ＿ｋ（但
し、ＭはＧｄ、Ｔｂ、Ｄｙ、Ｈｏ、Ｙｂ又はＹの何れか
、０．６≦ｋ≦１．３）である第２メンバー、Ｑ＿ｓ′
Ｚｒ＿１＿−＿ｓ′Ｏｌ（但し、ＱはＹ又はＡｌ、０＜
ｓ′＜１、０．６≦ｌ≦１．９）である第３メンバー、
ＲＮ＿ｍ、ＴＮ＿ｍ又はＲ＿ｓ″Ｔｉ＿１＿−＿ｓ−″
Ｎ＿ｍ（但し、ＲはＺｒ、Ｂ又はＣｒの何れか、ＴはＨ
ｆ、Ａｌ、又はＴｉの何れか、０＜ｓ″＜１、０．４≦
ｍ≦０．９）の何れかである第４メンバー、ＴａＯ＿ｎ
、ＮｂＯ＿ｎ又はＴａ＿ｔＮｂ＿１＿−＿ｔＯ＿ｍ（但
し、１．５≦ｎ＜２．５、０＜ｔ＜１）の何れかである
第５メンバー、Ｂｉ＿ｔ′ＶＯ＿ｐ（但し、ＶはＧｅ、
Ｓｉ、Ｔｉ、Ｐｂ、Ｚｎ、Ａｌ、Ｂのうちの１種以上、
１１≦ｔ′≦１３、１６≦ｐ≦２３）である第６メンバ
ー、ＬｉＮｂＯ＿ｑ、ＬｉＴａＯ＿ｑ又はＬｉＮｂ Qｔ″Ｔａ＿１＿−＿ｔＯ＿ｑ（但し、１．５≦ｑ＜３
、０＜ｔ″＜１）の何れかである第７メンバー、Ａｓ＿
ｕＳｅ＿１＿−＿ｕ（但し、０．２≦ｕ≦０．８）であ
る第８メンバーからなる群の一つのメンバーで表わされ
る｛但し、干渉膜を構成する第ｉメンバー（ｉ＝１〜８
）のｉ≠該干渉膜以外の保護膜を構成する第ｊメンバー
（ｊ＝１〜８）のｊ｝ことを特徴とする光磁気ディスク
。[Claims] In a magneto-optical disk comprising an interference film and a protective film other than the interference film, the composition of the dielectric film as the interference film is AO.
_a, DO_a or A_xD_1_-_xO_a (However, A is Zr or Cr, D is Hf or Zn, a≧0.5,
The first member, EO_b(
However, E is any one of Gd, Tb, Dy, Ho, Yb, or Y, the second member, F_x, which satisfies 0.6≦b≦1.3)
'Zr_1_-_x'O_c (However, F is Y or Al,
0<x′<1, 0.6≦c≦1.9), GN_d, HN_d or G_x″H_1_−_x″
N_d (However, G is Zr, B or Cr, H is H
f, either Al or Ti, 0<x″<1, 0.4≦d
≦0.9), the fourth member TaO_e,
The fifth member is either NbO_e or Ta_yNb_1_-_yOea (1.5≦e<2.5, 0<y<1), Bi_y'IO_f (I is Ge, S
one or more of i, Ti, Pb, Zn, Al, B, 1
1≦y′≦13, 16≦f≦23), LiNbO_g, LiTaO_g or LiNb_y″
Ta_1_-_y″O_g (1.5≦g<3,0
<y″<1), the seventh member As_zS
e_1_-_z (however, 0.2≦z≦0.8), and the composition of the dielectric film as the protective film is JO_
h, LO_h or J_sL_1_-_sO_h (however,
J is Zr or Cr, L is Hf or Zn, h≧0.5, 0
<s<1), the second member is MO_k (where M is any of Gd, Tb, Dy, Ho, Yb, or Y, 0.6≦k≦1.3). , Q_s′
Zr_1_-_s'Ol (however, Q is Y or Al, 0<
s′<1, 0.6≦l≦1.9), a third member;
RN_m, TN_m or R_s"Ti_1_-_s-"
N_m (However, R is Zr, B or Cr, T is H
f, Al, or Ti, 0<s″<1, 0.4≦
m≦0.9), the fourth member TaO_n
, NbO_n or Ta_tNb_1_-_tO_m (however, 1.5≦n<2.5, 0<t<1), Bi_t'VO_p (however, V is Ge,
One or more of Si, Ti, Pb, Zn, Al, B,
11≦t′≦13, 16≦p≦23), LiNbO_q, LiTaO_q or LiNb Qt″Ta_1_−_tO_q (however, 1.5≦q<3
, 0<t″<1), the seventh member As_
uSe_1_-_u (however, 0.2≦u≦0.8) {However, the i-th member (i=1 to 8
) i≠j of the j-th member (j=1 to 8) constituting a protective film other than the interference film}.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1638287A JPS63184941A (en) | 1987-01-27 | 1987-01-27 | Magneto-optical disk |
| EP87903436A EP0324853B1 (en) | 1986-05-30 | 1987-05-29 | Magneto-optical disk |
| DE8787903436T DE3778905D1 (en) | 1986-05-30 | 1987-05-29 | MAGNETOOPTIC PLATE. |
| PCT/JP1987/000347 WO1987007422A1 (en) | 1986-05-30 | 1987-05-29 | Magneto-optical disk |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1638287A JPS63184941A (en) | 1987-01-27 | 1987-01-27 | Magneto-optical disk |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63184941A true JPS63184941A (en) | 1988-07-30 |
Family
ID=11914729
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1638287A Pending JPS63184941A (en) | 1986-05-30 | 1987-01-27 | Magneto-optical disk |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63184941A (en) |
Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59104737A (en) * | 1982-12-03 | 1984-06-16 | Seiko Instr & Electronics Ltd | Optical magnetic disc |
| JPS6010431A (en) * | 1983-06-29 | 1985-01-19 | Canon Inc | Optical recording medium |
| JPS6055537A (en) * | 1983-09-06 | 1985-03-30 | Nippon Kogaku Kk <Nikon> | Magneto-optical reproduction method using asymmetric kerr effect and recording medium and reproducer using said reproduction method |
| JPS60172158A (en) * | 1984-02-15 | 1985-09-05 | Mitsubishi Electric Corp | Fluorescent lamp |
| JPS60183742A (en) * | 1984-03-02 | 1985-09-19 | Toshiba Corp | Semiconductor package |
| JPS60188907A (en) * | 1984-03-09 | 1985-09-26 | Hitachi Ltd | Optical resin composition and optical element |
| JPS6134747A (en) * | 1984-07-27 | 1986-02-19 | Hitachi Ltd | Photoelectromagnetic multilayered film medium |
| JPS61123677A (en) * | 1984-10-22 | 1986-06-11 | ディーエスエム ナムローゼ フェンノートシャップ | Radiant ray curable liquid coating composition |
| JPS61211853A (en) * | 1985-03-18 | 1986-09-19 | Nec Corp | Photomagnetic recording medium |
| JPS621068A (en) * | 1985-06-20 | 1987-01-07 | Fujitsu Ltd | Screen switching system |
| JPS622337A (en) * | 1985-06-27 | 1987-01-08 | Toshiba Corp | Memory extending system |
| JPS624143A (en) * | 1985-06-28 | 1987-01-10 | Oki Electric Ind Co Ltd | Cash disposing device at cage |
| JPS628951A (en) * | 1985-07-04 | 1987-01-16 | ジ−メンス・アクチエンゲゼルシヤフト | Device for guiding paper in printer |
-
1987
- 1987-01-27 JP JP1638287A patent/JPS63184941A/en active Pending
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59104737A (en) * | 1982-12-03 | 1984-06-16 | Seiko Instr & Electronics Ltd | Optical magnetic disc |
| JPS6010431A (en) * | 1983-06-29 | 1985-01-19 | Canon Inc | Optical recording medium |
| JPS6055537A (en) * | 1983-09-06 | 1985-03-30 | Nippon Kogaku Kk <Nikon> | Magneto-optical reproduction method using asymmetric kerr effect and recording medium and reproducer using said reproduction method |
| JPS60172158A (en) * | 1984-02-15 | 1985-09-05 | Mitsubishi Electric Corp | Fluorescent lamp |
| JPS60183742A (en) * | 1984-03-02 | 1985-09-19 | Toshiba Corp | Semiconductor package |
| JPS60188907A (en) * | 1984-03-09 | 1985-09-26 | Hitachi Ltd | Optical resin composition and optical element |
| JPS6134747A (en) * | 1984-07-27 | 1986-02-19 | Hitachi Ltd | Photoelectromagnetic multilayered film medium |
| JPS61123677A (en) * | 1984-10-22 | 1986-06-11 | ディーエスエム ナムローゼ フェンノートシャップ | Radiant ray curable liquid coating composition |
| JPS61211853A (en) * | 1985-03-18 | 1986-09-19 | Nec Corp | Photomagnetic recording medium |
| JPS621068A (en) * | 1985-06-20 | 1987-01-07 | Fujitsu Ltd | Screen switching system |
| JPS622337A (en) * | 1985-06-27 | 1987-01-08 | Toshiba Corp | Memory extending system |
| JPS624143A (en) * | 1985-06-28 | 1987-01-10 | Oki Electric Ind Co Ltd | Cash disposing device at cage |
| JPS628951A (en) * | 1985-07-04 | 1987-01-16 | ジ−メンス・アクチエンゲゼルシヤフト | Device for guiding paper in printer |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4670323A (en) | Magneto-optic recording medium having a metal oxide recording layer | |
| JPS63184941A (en) | Magneto-optical disk | |
| US4788095A (en) | Metal oxide magnetic substance and a magnetic film consisting thereof and their uses | |
| JPS63173250A (en) | Magneto-optical disk | |
| JPS62232738A (en) | Photomagnetic recording medium | |
| JPS60124901A (en) | Metal oxide magnetic material and magnetic film | |
| JPS63171447A (en) | Magneto-optical disk | |
| JPS63160037A (en) | Magneto-optical disk | |
| JPH02195543A (en) | Magneto-optical disk | |
| JPS62246160A (en) | Medium for photomagnetic recording | |
| JPS63179433A (en) | Magneto-optical disk | |
| JPS62232736A (en) | Photomagnetic recording medium | |
| JPS60158604A (en) | Metal oxide magnetic substance and magnetic film | |
| JPS63269348A (en) | Magneto-optical recording medium | |
| JPS62200551A (en) | Photomagnetic recording medium | |
| JPS62239447A (en) | Magneto-optical recording medium | |
| JPS60220909A (en) | Metal oxide magnetic body and magnetic film | |
| JPS6310354A (en) | Magneto-optical recording medium | |
| JPS60263357A (en) | Photomagnetic recording medium | |
| JPH02110842A (en) | Magneto-optical recording medium and magneto-optical recording method | |
| JPS6284442A (en) | Optical recording medium | |
| JP2960767B2 (en) | Magneto-optical recording medium | |
| JPS60211903A (en) | Magnetic substance and magnetic film for photomagnetic recording medium | |
| JPS63173248A (en) | Magneto-optical disk | |
| JPS62200550A (en) | Photomagnetic recording medium |