JPS63181491A - Heat sink - Google Patents

Heat sink

Info

Publication number
JPS63181491A
JPS63181491A JP1466487A JP1466487A JPS63181491A JP S63181491 A JPS63181491 A JP S63181491A JP 1466487 A JP1466487 A JP 1466487A JP 1466487 A JP1466487 A JP 1466487A JP S63181491 A JPS63181491 A JP S63181491A
Authority
JP
Japan
Prior art keywords
heat sink
semiconductor laser
laser element
monitor light
fixed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1466487A
Other languages
Japanese (ja)
Inventor
Hidehiko Negishi
根岸 英彦
Tomoko Abe
阿部 友子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP1466487A priority Critical patent/JPS63181491A/en
Publication of JPS63181491A publication Critical patent/JPS63181491A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To obtain a stable metal fixing of a semiconductor laser and to allow monitor light of a semiconductor laser element to be connected to a photodetector with high efficiency by causing the semiconductor laser element to form a metallic layer having a high thermal conductivity at its whole plane and further to prepare an inclined part at its fixed plane. CONSTITUTION:After Ti and Ni are deposited at the whole plane of a heat sink 11, a soldering plating is performed and then a semiconductor laser element 13 is fixed to a heat sink with metal (solder). There is an inclined part 12 at a fixed plane of the laser element 13 having the heat sink 11. Monitor light in the rear of the laser element 13 is not reflected to the heat sink 11 and is taken out in the rear. If only an angle of inclination theta at the inclined part 12 of the heat sink 11 is more than 15 deg., the monitor light will be favorably connected to a photodetector. Although the whole plane of the heat sink 11 is treated by solder plating, it may be as well to be treated at more than three faces such as upper, lower, and side faces. Thus a stable metal fixing of the semiconductor laser element is obtained and the monitor light in the rear of the laser element is connected to the photodetector with high efficiency.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、半導体レーザ素子との固定を金属により行い
、かつ半導体レーザ素子のモニタ光を効率良く受光素子
に結合させることを目的としたヒートシンクに関するも
のである。
DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a heat sink that is fixed to a semiconductor laser element using metal and is intended to efficiently couple monitor light from the semiconductor laser element to a light receiving element. It is.

従来の技術 最近、半導体レーザ素子を搭載するためのヒートシンク
は、光通信等の分野で盛んに利用されるようになってき
た。このヒートシンクは、例えば、特開昭59−985
68号公報に記載されている構成が知られている。
BACKGROUND OF THE INVENTION Recently, heat sinks for mounting semiconductor laser elements have been widely used in fields such as optical communications. This heat sink is, for example, JP-A-59-985
A configuration described in Japanese Patent No. 68 is known.

以下、第3図を参照して、従来のヒートシンクについて
説明する。第3図において、1はヒートシンク、2は半
導体レーザ素子、3はこの半導体レーザ素子2の活性領
域、4は負極印加用ワイヤ、5は正極印加用ワイヤであ
る。半導体レーザ素子2を固定する方法には、半導体レ
ーザ素子2の活性領域3が固定部分に近いアップサイド
ダウン方法と、活性領域3が固定部分から遠くなるアン
プサイドアップ方法の三方法がある。通常半導体レーザ
素子2の固定には、パッケージの接地を考慮して、アッ
プサイドアップ方法が採用されていた。
Hereinafter, a conventional heat sink will be explained with reference to FIG. In FIG. 3, 1 is a heat sink, 2 is a semiconductor laser element, 3 is an active region of this semiconductor laser element 2, 4 is a negative electrode application wire, and 5 is a positive electrode application wire. There are three methods for fixing the semiconductor laser device 2: an upside-down method in which the active region 3 of the semiconductor laser device 2 is close to the fixed portion, and an amplifier side-up method in which the active region 3 is far from the fixed portion. Normally, an upside-up method has been adopted for fixing the semiconductor laser element 2 in consideration of the grounding of the package.

発明が解決しようとする問題点 しかし、上述のアップサイドアップ方法では、半導体レ
ーザ素子2の活性領域3が、ヒートシンク1の上面の近
傍に位置しているため、半導体レーザ素子2の後方から
出射されるモニタ光は、ヒートシンク1の上面で反射さ
れて、受光素子への良好な結合が得られず、半導体レー
ザ素子2の安定動作ができないという問題が生じていた
Problems to be Solved by the Invention However, in the upside-up method described above, since the active region 3 of the semiconductor laser device 2 is located near the top surface of the heat sink 1, the light is emitted from the rear of the semiconductor laser device 2. The monitor light is reflected by the upper surface of the heat sink 1, and good coupling to the light receiving element cannot be obtained, resulting in a problem that stable operation of the semiconductor laser element 2 cannot be achieved.

本発明は、上記問題を解決するもので、半導体レーザの
安定な金属固定を可能とするとともに、半導体レーザ素
子のモニタ光を高効率で受光素子に結合させることを可
能とするヒートシンクを提供することを目的とするもの
である。
The present invention solves the above problems, and provides a heat sink that enables stable metal fixation of a semiconductor laser and also enables highly efficient coupling of monitor light from a semiconductor laser element to a light receiving element. The purpose is to

問題点を解決するための手段 この問題点を解決するために本発明は、全ての面に金属
層を有し、かつ半導体レーザ素子の固定面に傾斜部を設
けたものである。
Means for Solving the Problem In order to solve this problem, the present invention has a metal layer on all surfaces and a sloped portion on the fixed surface of the semiconductor laser element.

作  用 半導体レーザ素子の固定に、前記ヒートシンクを用いる
ことにより、前記半導体レーザ素子の安定な金属固定が
可能であり、同時に、前記半導体レーザ素子のモニタ光
を前記受光素子に高効率で結合させることを可能となる
ものである。
By using the heat sink to fix the semiconductor laser element, the semiconductor laser element can be stably fixed to metal, and at the same time, the monitor light of the semiconductor laser element can be coupled with high efficiency to the light receiving element. This makes it possible to

実施例 以下、本発明の一実施例を図面に基づき説明する。第1
図は斜視図であり、第2図は側面図である。図において
、11はヒートシンク、12は傾斜部、13は半導体レ
ーザ素子、14は半導体レーザ素子の活性領域、15は
負極用ワイヤ、16は正極用ワイヤである。ヒートシン
ク11には、全面にTi、Ni蒸着後、ノ・ンダメッキ
が施こされておシ、半導体レーザ素子13とヒートシン
ク11の固定は、金属(ハンダ)により実施している。
EXAMPLE Hereinafter, an example of the present invention will be described based on the drawings. 1st
The figure is a perspective view, and FIG. 2 is a side view. In the figure, 11 is a heat sink, 12 is an inclined portion, 13 is a semiconductor laser element, 14 is an active region of the semiconductor laser element, 15 is a negative electrode wire, and 16 is a positive electrode wire. The entire surface of the heat sink 11 is subjected to Ti and Ni vapor deposition, followed by solder plating, and the semiconductor laser element 13 and the heat sink 11 are fixed with metal (solder).

さらに、ヒートシンク11の半導体レーザ素子13の固
定面には、傾斜部12があり、半導体レーザ素子13の
後方モニタ光が、ヒートシンク11に反射されることな
く後方に取り出せる構成になっている。ヒートシンク1
1の傾斜部12の傾斜角は、半導体レーザ素子13の遠
視野像測定により決定されるが、実験によシ傾斜角θは
、15度以上であれば、モニタ光と受光素子との良好な
結合が得られている。本実施例では、ヒートシンク11
は、低抵抗のシリコンを使用したが、他に熱伝導率の高
い材質であればよい。また、ヒートシンク11は全ての
面にハンダメッキが施こされているが、上面、下面及び
側面の3面以上であれば問題ない。
Further, the surface of the heat sink 11 on which the semiconductor laser element 13 is fixed has an inclined part 12, so that the rear monitor light of the semiconductor laser element 13 can be taken out to the rear without being reflected by the heat sink 11. heat sink 1
The inclination angle of the inclination part 12 of No. 1 is determined by far-field image measurement of the semiconductor laser element 13, but according to experiments, if the inclination angle θ is 15 degrees or more, good communication between the monitor light and the light receiving element is achieved. A bond is obtained. In this embodiment, the heat sink 11
Although low-resistance silicon was used, any other material with high thermal conductivity may be used. Further, although all surfaces of the heat sink 11 are solder plated, there is no problem as long as the three or more surfaces of the top surface, bottom surface, and side surfaces are used.

発明の効果 以上のよ、うに、本発明によれば、半導体レーザ素子の
安定な金属固定ができるだけでなく、半導体レーザ素子
の後方モニタ光を受光素子に高効率で結合できるヒート
シンクを提供することが可能となり、実用面での効果は
大である。
Effects of the Invention As described above, according to the present invention, it is possible to provide a heat sink that can not only stably fix a semiconductor laser element to metal, but also can couple the rear monitor light of the semiconductor laser element to a light receiving element with high efficiency. This has become possible and has great practical effects.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図及び第2図はそれぞれ本発明の一実施例によるヒ
ートシンクを示す斜視図及び側面図、第3図は従来のヒ
ートシンクを示す斜視図である。 11・・・・・・ヒートシンク、12・・・・・・lt
l+部、13・・・・半導体レーザ素子、14・・・・
・・活性領域。 代理人の氏名 弁理士 中 尾 敏 男 ほか1名TI
−ヒートシンク I2−傾斜部 13−半導体レーザ素子 I4−5古 性4Ilrli 第1図 第2図   13
1 and 2 are a perspective view and a side view, respectively, of a heat sink according to an embodiment of the present invention, and FIG. 3 is a perspective view of a conventional heat sink. 11...Heat sink, 12...lt
l+ part, 13... semiconductor laser element, 14...
...Active region. Name of agent: Patent attorney Toshio Nakao and one other TI
- Heat sink I2 - Inclined part 13 - Semiconductor laser element I4-5 Oldness 4Ilrli Fig. 1 Fig. 2 13

Claims (1)

【特許請求の範囲】[Claims] 高い熱伝導率を有しかつ全ての面に金属層を形成し、さ
らに半導体レーザ素子の固定面に傾斜部を設けたことを
特徴とするヒートシンク。
A heat sink having high thermal conductivity, having a metal layer formed on all surfaces, and further having an inclined portion on the surface on which a semiconductor laser element is fixed.
JP1466487A 1987-01-23 1987-01-23 Heat sink Pending JPS63181491A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1466487A JPS63181491A (en) 1987-01-23 1987-01-23 Heat sink

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1466487A JPS63181491A (en) 1987-01-23 1987-01-23 Heat sink

Publications (1)

Publication Number Publication Date
JPS63181491A true JPS63181491A (en) 1988-07-26

Family

ID=11867480

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1466487A Pending JPS63181491A (en) 1987-01-23 1987-01-23 Heat sink

Country Status (1)

Country Link
JP (1) JPS63181491A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0766355A1 (en) * 1995-09-29 1997-04-02 Siemens Aktiengesellschaft Method of mounting a semiconductor laser device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0766355A1 (en) * 1995-09-29 1997-04-02 Siemens Aktiengesellschaft Method of mounting a semiconductor laser device
US5943553A (en) * 1995-09-29 1999-08-24 Siemens Aktiengesellschaft Applying semiconductor laser mirror layers after securing support plate to laser body

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