JPH0222878A - Heat sink - Google Patents
Heat sinkInfo
- Publication number
- JPH0222878A JPH0222878A JP17187288A JP17187288A JPH0222878A JP H0222878 A JPH0222878 A JP H0222878A JP 17187288 A JP17187288 A JP 17187288A JP 17187288 A JP17187288 A JP 17187288A JP H0222878 A JPH0222878 A JP H0222878A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- laser element
- protruding part
- heat sink
- metal layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 42
- 229910052751 metal Inorganic materials 0.000 claims abstract description 15
- 239000002184 metal Substances 0.000 claims abstract description 15
- 230000003287 optical effect Effects 0.000 abstract description 13
- 238000000034 method Methods 0.000 abstract description 6
- 229910052710 silicon Inorganic materials 0.000 abstract description 3
- 239000010703 silicon Substances 0.000 abstract description 3
- 229910000679 solder Inorganic materials 0.000 abstract description 3
- 230000008878 coupling Effects 0.000 abstract description 2
- 238000010168 coupling process Methods 0.000 abstract description 2
- 238000005859 coupling reaction Methods 0.000 abstract description 2
- 238000002474 experimental method Methods 0.000 abstract description 2
- 238000001259 photo etching Methods 0.000 abstract description 2
- 238000007747 plating Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は、半導体レーザ素子を搭載するためのヒートシ
ンクに関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a heat sink for mounting a semiconductor laser element.
(従来の技術)
最近、半導体レーザ素子を搭載するためのヒートシンク
は、光通信、光計測等の分野で盛んに利用されるように
なってきた。このようなヒートシンクは、例えば特開昭
59−98566号公報に記載されている構成が知られ
ている。(Prior Art) Recently, heat sinks for mounting semiconductor laser elements have been widely used in fields such as optical communication and optical measurement. Such a heat sink is known, for example, as described in Japanese Patent Laid-Open No. 59-98566.
第3図には、従来のヒートシンク1に半導体レーザ素子
2を搭載した状態が示され、同図において3は半導体レ
ーザ素子の活性領域、4は負極印加用ワイヤ、5は正極
印加用ワイヤである。FIG. 3 shows a state in which a semiconductor laser device 2 is mounted on a conventional heat sink 1. In the figure, 3 is an active region of the semiconductor laser device, 4 is a negative electrode application wire, and 5 is a positive electrode application wire. .
半導体レーザ素子2を固定するのに、半導体レーザ素子
2の活性領域3が固定部分に近いアップサイドダウン方
法と、活性領域3が固定部分から遠くなるアップサイド
アップ方法の二方法があるが、通常半導体レーザ素子2
の固定には、パッケージの接地及び熱伝導等を考慮して
アップサイドアップ方法が採用されている。There are two methods for fixing the semiconductor laser device 2: an upside-down method in which the active region 3 of the semiconductor laser device 2 is close to the fixed portion, and an upside-up method in which the active region 3 is far from the fixed portion. Semiconductor laser element 2
An upside-up method is used to fix the package, taking into account grounding of the package and heat conduction.
(発明が解決しようとする課題)
しかしながら、上述のアップサイドアップ方法による半
導体レーザ素子の固定では、半導体レーザ素子の活性領
域がヒートシンクの上面の近傍に位置しているため、半
導体レーザ素子の後方から出射される背面光は、ヒート
シンクの上面で反射された受光素子への良好な結合が得
られず、また半導体レーザ素子の固定位置が規定されて
いないため、半導体レーザ素子の前面光も光学系への良
好な結合が得られず、半導体レーザ素子の安定な動作が
で台ないという問題点があった。(Problem to be Solved by the Invention) However, when fixing a semiconductor laser device using the above-mentioned upside-up method, the active region of the semiconductor laser device is located near the top surface of the heat sink. The emitted back light is reflected on the top surface of the heat sink and cannot be well coupled to the photodetector, and since the fixed position of the semiconductor laser element is not specified, the front light of the semiconductor laser element also enters the optical system. There was a problem in that good coupling of the semiconductor laser elements could not be obtained, and stable operation of the semiconductor laser device could not be achieved.
本発明は上記の点にかんがみ、半導体レーザ素子の固定
位置が規正され、しかも安定な固定ができ、半導体レー
ザ素子からの前面光を光学系に。In view of the above points, the present invention allows the fixing position of a semiconductor laser element to be regulated and is stably fixed, and allows the front light from the semiconductor laser element to be transmitted to an optical system.
背面光を受光素子に高効率で結合できるようにしたヒー
トシンクを提供するものである。The present invention provides a heat sink that can couple back light to a light receiving element with high efficiency.
(課題を解決するための手段)
そこで本発明は、半導体レーザ素子固定用凸部を設け、
該凸部上面に上記レーザ素子固着用金属層を形成させた
ものである。(Means for Solving the Problems) Therefore, the present invention provides a protrusion for fixing a semiconductor laser element,
The metal layer for fixing the laser element is formed on the upper surface of the convex portion.
(作 用)
半導体レーザ素子固定用凸部を設け、その上面に固着用
金属層を設けたので、該固着用金属層に半導体レーザ素
子を固着することにより、半導体レーザ素子の固定位置
が規定され、安定な金属固定ができ、しかも凸部上に固
定されることにより半導体レーザ素子の背面光はヒート
シンク上面で反射されることなく受光素子に良好に結合
され。(Function) Since the convex part for fixing the semiconductor laser element is provided and the fixing metal layer is provided on the upper surface thereof, the fixing position of the semiconductor laser element can be defined by fixing the semiconductor laser element to the fixing metal layer. The semiconductor laser element can be stably fixed to the metal, and by being fixed on the convex portion, the back light of the semiconductor laser element is well coupled to the light receiving element without being reflected on the upper surface of the heat sink.
その前面光も光学系に良好に結合される。Its front light is also well coupled into the optical system.
(実施例)
第1図は半導体レーザ素子を搭載した状態を示す本発明
の実施例の斜視図、第2図は光学系、受光素子系を含ん
だ同側面図を示し、ヒートシンク11は低抵抗の高い熱
伝導率を有するシリコンにより作られ、その上面には半
導体レーザ素子固定用凸部12が設けられる。この凸部
12はフォトエツチングにより正確かつ高精度に形成さ
れる。また凸部12の上面全面にTi、Ni蒸着後、ハ
ンダメツキによる金属層13が形成されている。14は
半導体レーザ素子、15は半導体レーザ素子14の活性
領域。(Embodiment) Fig. 1 is a perspective view of an embodiment of the present invention showing a state in which a semiconductor laser element is mounted, Fig. 2 is a side view of the same including an optical system and a light receiving element system, and the heat sink 11 has a low resistance. It is made of silicon having a high thermal conductivity, and a convex portion 12 for fixing a semiconductor laser element is provided on its upper surface. This convex portion 12 is formed accurately and with high precision by photoetching. Further, a metal layer 13 is formed on the entire upper surface of the convex portion 12 by depositing Ti and Ni and then solder plating. 14 is a semiconductor laser device; 15 is an active region of the semiconductor laser device 14;
16は負極用ワイヤ、17は正極用ワイヤ、18は半導
体レーザ素子固定用凸部12からの前面光、19は同背
面光、20は光学レンズ、21は光学レンズ固定台、2
2は受光素子、23は受光素子固定台である。16 is a wire for the negative electrode, 17 is a wire for the positive electrode, 18 is the front light from the convex portion 12 for fixing the semiconductor laser element, 19 is the back light, 20 is the optical lens, 21 is the optical lens fixing stand, 2
2 is a light receiving element, and 23 is a light receiving element fixing base.
ハンダメツキによる金属層13によって半導体レーザ素
子13が凸部12に位置規制されて固着される。The semiconductor laser element 13 is positioned and fixed to the convex portion 12 by the metal layer 13 formed by soldering.
凸部12の高さは半導体レーザ素子14の遠視野像測定
により決定されるが、実験により5#IIm以上であれ
ば、前面光18と光学レンズ20、背面光19と受光素
子22との良好な結合が得られる。The height of the convex portion 12 is determined by measuring the far-field image of the semiconductor laser element 14, but according to an experiment, if it is 5#IIm or more, the front light 18 and the optical lens 20, the back light 19 and the light receiving element 22 are in good condition. A strong bond is obtained.
上記実施例では、ヒートシンク11には低抵抗のシリコ
ンを使用したが、他の熱伝導率の高い材質のものを用い
てもよく、また凸部12上面の金属層13にはハンダメ
ツキを用いたが、半導体レーザ素子14を安定に固定で
きれば他の金属で形成してもよい。In the above embodiment, low-resistance silicon was used for the heat sink 11, but other materials with high thermal conductivity may be used, and solder plating was used for the metal layer 13 on the top surface of the convex portion 12. However, other metals may be used as long as the semiconductor laser element 14 can be stably fixed.
(発明の効果)
以上のように本発明によれば、半導体レーザ素子固定用
凸部を設け、該凸部上面に金属層を形成させたことによ
り、半導体レーザ素子の固定位置が凸部上に規正され、
しかも安定な金属固定ができ、また半導体レーザ素子か
らの前面光を光学系に、背面光を受光素子に表面からの
反射をなくして高効率で結合することができる。(Effects of the Invention) As described above, according to the present invention, the protrusion for fixing the semiconductor laser element is provided and the metal layer is formed on the upper surface of the protrusion, so that the fixing position of the semiconductor laser element is placed on the protrusion. regulated,
Moreover, stable metal fixation is possible, and the front light from the semiconductor laser element can be coupled to the optical system and the back light to the light receiving element with high efficiency by eliminating reflection from the surface.
第1図は半導体レーザ素子を固定した状態を示す本発明
の実施例の斜視図、第2図は光学系、受光素子系を含む
同側面図、第3図は半導体レーザ素子を固定した状態を
示す従来のヒートシンクの斜視図である。
11・・・ヒートシンク、12・・・半導体レーザ素子
固定用凸部、 13・・・金属層。
14・・・半導体レーザ素子。
特許出願人 松下電器産業株式会社
第
図
第
図
11°°° ヒートシンク
、13・・・奮[1
12・・・平場1トレーグ米4r司良刑凸仰14・・・
キ導俸し−ブー隈3
第
図FIG. 1 is a perspective view of an embodiment of the present invention showing a state in which a semiconductor laser device is fixed, FIG. 2 is a side view of the same including an optical system and a light receiving element system, and FIG. 3 is a state in which a semiconductor laser device is fixed. 1 is a perspective view of a conventional heat sink shown in FIG. DESCRIPTION OF SYMBOLS 11... Heat sink, 12... Convex part for fixing a semiconductor laser element, 13... Metal layer. 14... Semiconductor laser element. Patent Applicant: Matsushita Electric Industrial Co., Ltd. Figure 11°°° Heat sink, 13...Iku [1 12...Hiraba 1 Treig Rice 4r Tsuji Ryogei Convex 14...
Guidance - Boo Kuma 3 Figure
Claims (1)
レーザ素子固着用金属層を形成したことを特徴とするヒ
ートシンク。A heat sink characterized in that a convex part for fixing a semiconductor laser element is provided, and the metal layer for fixing the laser element is formed on the upper surface of the convex part.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17187288A JPH0222878A (en) | 1988-07-12 | 1988-07-12 | Heat sink |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17187288A JPH0222878A (en) | 1988-07-12 | 1988-07-12 | Heat sink |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0222878A true JPH0222878A (en) | 1990-01-25 |
Family
ID=15931357
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17187288A Pending JPH0222878A (en) | 1988-07-12 | 1988-07-12 | Heat sink |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0222878A (en) |
-
1988
- 1988-07-12 JP JP17187288A patent/JPH0222878A/en active Pending
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