JPS63180467A - Polishing liquid - Google Patents
Polishing liquidInfo
- Publication number
- JPS63180467A JPS63180467A JP62009994A JP999487A JPS63180467A JP S63180467 A JPS63180467 A JP S63180467A JP 62009994 A JP62009994 A JP 62009994A JP 999487 A JP999487 A JP 999487A JP S63180467 A JPS63180467 A JP S63180467A
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- gallium arsenide
- sodium
- polishing liquid
- reaction product
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 75
- 239000007788 liquid Substances 0.000 title claims abstract description 25
- 239000005708 Sodium hypochlorite Substances 0.000 claims abstract description 14
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 claims abstract description 14
- 235000019832 sodium triphosphate Nutrition 0.000 claims abstract description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 13
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 claims abstract description 9
- 229910052938 sodium sulfate Inorganic materials 0.000 claims abstract description 9
- 235000011152 sodium sulphate Nutrition 0.000 claims abstract description 9
- 239000000203 mixture Substances 0.000 claims description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract description 27
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 26
- 239000000758 substrate Substances 0.000 abstract description 16
- 239000007795 chemical reaction product Substances 0.000 abstract description 8
- 239000004744 fabric Substances 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 4
- 238000007517 polishing process Methods 0.000 abstract description 2
- GOLCXWYRSKYTSP-UHFFFAOYSA-N Arsenious Acid Chemical compound O1[As]2O[As]1O2 GOLCXWYRSKYTSP-UHFFFAOYSA-N 0.000 abstract 2
- 238000010494 dissociation reaction Methods 0.000 abstract 1
- 230000005593 dissociations Effects 0.000 abstract 1
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 abstract 1
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 21
- 239000000243 solution Substances 0.000 description 13
- 239000013078 crystal Substances 0.000 description 11
- 239000006061 abrasive grain Substances 0.000 description 6
- 229910003460 diamond Inorganic materials 0.000 description 6
- 239000010432 diamond Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000011734 sodium Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- -1 that is Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000002480 mineral oil Substances 0.000 description 3
- 235000010446 mineral oil Nutrition 0.000 description 3
- 229910052708 sodium Inorganic materials 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- 229910005540 GaP Inorganic materials 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- QWPPOHNGKGFGJK-UHFFFAOYSA-N hypochlorous acid Chemical compound ClO QWPPOHNGKGFGJK-UHFFFAOYSA-N 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 229910000108 silver(I,III) oxide Inorganic materials 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- UNXRWKVEANCORM-UHFFFAOYSA-I triphosphate(5-) Chemical compound [O-]P([O-])(=O)OP([O-])(=O)OP([O-])([O-])=O UNXRWKVEANCORM-UHFFFAOYSA-I 0.000 description 1
Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の目的〕
（産業上の利用分野）
本発明は、化合物半導体、特に砒化ガリウム単結晶基板
のｆｉ８面研磨に使用する研磨液に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to a polishing liquid used for fi8 surface polishing of a compound semiconductor, particularly a gallium arsenide single crystal substrate.
（従来の技術）
砒化ガリウム（ＧａＡｓ ）単結晶基板の研磨加工に用
いる研磨液としては楕々のものがあるが、従来より多く
用いられている研磨液には、ダイヤモンドの微細砥粒を
含む鉱物１油と、臭素（Ｂｒ）をメチルアルコールに溶
解させたＢｒメタノール溶液がある。このうち、ダイヤ
モンドの微細砥粒を含む鉱物油を用いて、砒化ガリウム
単結晶基板を研磨する場合は、ダイヤモンドの微細砥粒
が砒化ガリウム単結晶基板の表面を少しずつ除去する過
程が繰り返し進行することによって、平滑な表面が作製
される。また、Ｂｒメタノール溶液を用いて、砒化ガリ
ウム単結晶基板を研磨する場合は、Ｂｒメタノール溶液
が砒化ガリウムと化学反応を起こし、即ち砒化ガリウム
の構成成分であるＧａとＡｓとを溶液中に溶かし込む、
いわゆるエツチング反応を起こし、砒化ガリウムを化学
的に溶解することによってしだいに平滑な表面が作製さ
れる。(Prior Art) There are various types of polishing liquids used for polishing gallium arsenide (GaAs) single crystal substrates, but the polishing liquids that have been commonly used include minerals containing fine diamond abrasive grains. 1 oil and a Br methanol solution in which bromine (Br) is dissolved in methyl alcohol. Among these, when polishing a gallium arsenide single crystal substrate using mineral oil containing fine diamond abrasive grains, the process in which the diamond fine abrasive grains gradually remove the surface of the gallium arsenide single crystal substrate progresses repeatedly. This creates a smooth surface. In addition, when polishing a gallium arsenide single crystal substrate using a Br methanol solution, the Br methanol solution causes a chemical reaction with gallium arsenide, that is, Ga and As, which are the constituent components of gallium arsenide, are dissolved in the solution. ,
By causing a so-called etching reaction and chemically dissolving the gallium arsenide, a smooth surface is gradually created.
ところで、前記ダイヤモンドの微細砥粒を含む鉱物油を
用いて砒化ガリウム単結晶基板を研磨する場合には、ダ
イヤモンドの微細砥粒による引っかき傷を基板表面に作
り、研磨加工後の基板表面に引っかき傷からなる損傷を
残留するという欠点があった。また、Ｂｒメタノール溶
液を用いて砒化ガリウム単結晶基板を研磨する場合には
、 Ｂｒメタノールが砒化ガリウムを溶かし込む化学反
応による研磨加工であるため、基板表面の形状精度（平
回度、平行度９表面粗さなど）が悪いという欠点があり
九。By the way, when polishing a gallium arsenide single crystal substrate using mineral oil containing the aforementioned fine diamond abrasive grains, scratches are created on the substrate surface by the diamond fine abrasive grains, and scratches are left on the substrate surface after polishing. The disadvantage was that it left behind some damage. In addition, when polishing a gallium arsenide single crystal substrate using a Br methanol solution, the polishing process is based on a chemical reaction in which Br methanol dissolves gallium arsenide, so the shape accuracy of the substrate surface (flatness, parallelism 9 It has the disadvantage of poor surface roughness (surface roughness, etc.).
（発明が解決しようとする問題点）
本発明は、上記実情にかんがみてなされたもので、その
目的とするところは、研磨加工後の基板表面に引っかき
傷等の損傷ヲＩＡ留することなしに、また、研磨加工後
の基板表面の形状精度が良好となる化合物半導体材料用
の研磨液を提供することにある。(Problems to be Solved by the Invention) The present invention has been made in view of the above-mentioned circumstances, and its purpose is to eliminate damage such as scratches on the surface of the substrate after polishing. Another object of the present invention is to provide a polishing liquid for compound semiconductor materials that provides good shape accuracy on the surface of a substrate after polishing.
（問題点を解決するための手段と作用）化合物半導体材
料の研磨液において水に少なくとも次亜塩素酸ナトリウ
ム（ＮａＣＪＯ） 、 ）リボリりん酸ナトリウム（
Ｎａ、Ｐ、０．。）、硫酸ナトリウム（Ｎａ、８０．）
を混合してなり、損傷を生じることなく高精度研磨が可
能となるものである。(Means and effects for solving the problem) In the polishing solution for compound semiconductor materials, at least sodium hypochlorite (NaCJO), ) sodium ribophosphate (
Na, P, 0. . ), sodium sulfate (Na, 80.)
This makes it possible to perform high-precision polishing without causing damage.
（実施例） 以下、本発明の一実施例を図面を参照して詳述する。(Example) Hereinafter, one embodiment of the present invention will be described in detail with reference to the drawings.
本発明の実施例としては、次亜塩素酸ナトリウム水溶液
（ＮａＣｊＯ） （有効塩素濃度１２．４６Ｗｔ’１０
）、トリポリりん酸ナトリウム（ＮａｓＰｓＯｌｏ）
、硫酸ナトリウム（Ｎ〜８０４）を２０ｇ、 ６．４，
９．７．２９の割合で調合し、上記調合物を５００ｍＡ
！、の純水に溶解したものを研磨液とし、試験的に砒化
ガリウムの研磨を行った。第１表に研磨条件を示す。As an example of the present invention, sodium hypochlorite aqueous solution (NaCjO) (effective chlorine concentration 12.46Wt'10
), sodium tripolyphosphate (NasPsOlo)
, 20g of sodium sulfate (N~804), 6.4,
9.7.29 and apply the above formulation at 500 mA.
! , was dissolved in pure water as a polishing liquid, and gallium arsenide was experimentally polished. Table 1 shows the polishing conditions.
第 １ 表
しかして、研磨治具（１）に切削された１ＱＱｕ＋”の
砒化ガリウム結晶（２）・・・を第１図の様に１２枚対
象にはりつけ、９５．＠ｆ／ｃＩｒＬ”の圧力をかけて
研磨を行った。Table 1 Twelve 1QQu+" gallium arsenide crystals (2)... cut into the polishing jig (1) were attached to the target as shown in Figure 1, and a pressure of 95.@f/cIrL" was applied. Polishing was performed using
この結果、上記研磨条件において、２５μｍ研磨したと
ころ、表面粗さ０．００４μｍＲｍａｘの鏡面状態が得
られた。次に、トリポリりん酸ナトリウム、＊Ｈす）
９ ’ｙ ムｒ純水をそれぞれ６．４ｇ、 ７．２，９
．５００ｍＪの割合で混合した溶液の中に、次亜塩素酸
ナトリウムのｍ度を０．１〜０．４５ｗｔ％の範囲で変
化させて、砒化ガリウム結晶の研磨を行った。研磨条件
は第１表に準じて行りた。第２図に研磨液中の次亜塩素
酸ナトリウム濃度と研磨速度との関係を示す。この結果
、砒化ガリウムの研磨速度は、研磨液中の次亜塩素酸ナ
トリウム濃度を大きくすることによりて増大させること
が可能となる。次に、次亜塩素酸ナトリウム水溶液、硫
酸ナトリウム、純水をそれぞれ２０．！ｉ＋、 ７．２
，９．５００ｒＭの割合で混合した溶液の中に、）リポ
リりん酸ナトリウムを０．６〜４，６ｗｔ％の範囲で変
化させて、砒化ガリウム結晶の研磨を行った。研磨条件
は、第１表に準じて行った。第３図に、研磨液中のトリ
ポリりん酸ナトリウム濃度と研磨速度との関係を示す。As a result, when polished by 25 μm under the above polishing conditions, a mirror surface state with a surface roughness of 0.004 μm Rmax was obtained. Next, sodium tripolyphosphate, *Hsu)
9'y 6.4g of pure water, 7.2,9
．． Gallium arsenide crystals were polished by varying the m degree of sodium hypochlorite in the range of 0.1 to 0.45 wt% in a solution mixed at a rate of 500 mJ. The polishing conditions were as shown in Table 1. FIG. 2 shows the relationship between the concentration of sodium hypochlorite in the polishing liquid and the polishing rate. As a result, the polishing rate of gallium arsenide can be increased by increasing the concentration of sodium hypochlorite in the polishing liquid. Next, add 20% of each of sodium hypochlorite aqueous solution, sodium sulfate, and pure water. ! i+, 7.2
, 9.500 rM, and the gallium arsenide crystal was polished by varying the amount of sodium lipolyphosphate in the range of 0.6 to 4.6 wt%. The polishing conditions were as shown in Table 1. FIG. 3 shows the relationship between the concentration of sodium tripolyphosphate in the polishing liquid and the polishing rate.
第３図より、研磨速度は研縛液中のトリポリりん酸ナト
リウム濃度が１，３ｗｔ％までは急故に増加し、その後
一定になっている。この結果、本発明における研ｍ液組
成においてトリポリりん酸ナトリウムは研磨速度の安定
化作用をし、溶液中のトリポリりん酸ナトリウム濃度は
１．３ｗｔ％以上必要であるといえる。From FIG. 3, the polishing rate suddenly increases until the concentration of sodium tripolyphosphate in the polishing liquid reaches 1.3 wt%, and then becomes constant. As a result, it can be said that in the polishing solution composition of the present invention, sodium tripolyphosphate has a stabilizing effect on the polishing rate, and the concentration of sodium tripolyphosphate in the solution is required to be 1.3 wt% or more.
第４図乃至第６図は、次亜塩素酸ナトリウム。Figures 4 to 6 show sodium hypochlorite.
トリポリりん酸ナトリウム、硫酸ナトリウム、純水から
なる本発明における研磨液を用いて砒化ガリウムを研磨
したときの研磨モデルである。すなわち、研磨液成分中
の次亜塩素酸ナトリウムは純水中で解離してＮａ”、
ＣＬＯ−に分解する。そしてＣＪＯ−によりて砒化ガリ
ウム（２）の表面に反応生成物としテ（Ｄ Ｇａ、Ｏｎ
、 Ａｇ２Ｏ，膜（３）が形成される。次いで、研磨
布（４）によって前記反応生成物の一部（他より凸状の
部分）が、ぬぐい取られる。すると、ぬぐいとられた部
分は砒化ガリウム（２）面が露出するため、再度Ｇａ、
０． 、 Ａｓ、０．からなる反応生成物（５）が形成
され、次いで研磨布によってこの反応生成物（５）がぬ
ぐい取られる。この過程が繰り返されて行なわれること
によって研磨が進行し、平滑な鏡面状態が形成される。This is a polishing model when gallium arsenide is polished using a polishing liquid according to the present invention consisting of sodium tripolyphosphate, sodium sulfate, and pure water. In other words, sodium hypochlorite in the polishing liquid component dissociates in pure water and becomes Na'',
Decomposes into CLO-. Then, using CJO-, a reaction product (D Ga, On
, Ag2O, a film (3) is formed. Next, a part of the reaction product (a part that is more convex than the rest) is wiped off with a polishing cloth (4). Then, the gallium arsenide (2) surface of the wiped part is exposed, so Ga,
0. , As, 0. A reaction product (5) is formed, which is then wiped off with a polishing cloth. By repeating this process, polishing progresses and a smooth mirror surface is formed.
このようにして、研磨が進行するため、本発明における
研磨液を用いての研磨の場合には前記ダイヤモンドの微
細砥粒を含む鉱物油を用いての研磨において問題となる
基板表面に残留する引っかき傷などの損傷を生ずること
なしに研磨が可能であり、また、前記Ｂｒメタノール溶
液を用いての研磨において問題となる基板表面の形状精
度の悪化なしに研磨が可能である。また、研磨液成分と
してのトリポリりん酸ナトリウムは、反応生成物を生成
させる前記次亜塩素酸（ＣＺＯ−）が研磨液中で分解し
、また、純水中の水素イオンとの反応によってＣ１０，
ＨＣｊが生成され、研磨速度が不安定になる過程を妨げ
る作用をし、安定した研磨作用をさせるため必要不可欠
な成分であり、前記試験結果によれば、研磨液中のトリ
ポリりん酸濃度は１．３ｗｔ％以上必要であるといえる
。また、硫酸ナトリウムについては、含まない場合、即
ち、次亜塩素酸ナトリウム、トリポリりん酸ナトリウム
、純水からなる場合においても研磨可能であるが、硫酸
ナトリウムは純水に容易にＮａ＋とＳ Ｏｘ”−に解離
し、他の化学反応を容易にする作用があるため、混合さ
せた方が良い。また、純水については、研磨液の溶液と
なるため、これも必要不可欠な成分である。As polishing progresses in this manner, when polishing using the polishing liquid of the present invention, scratches remain on the substrate surface, which is a problem when polishing using mineral oil containing fine diamond abrasive grains. Polishing is possible without causing damage such as scratches, and also without deterioration of the shape accuracy of the substrate surface, which is a problem in polishing using the Br methanol solution. In addition, in sodium tripolyphosphate as a polishing liquid component, the hypochlorous acid (CZO-) that generates reaction products decomposes in the polishing liquid, and also reacts with hydrogen ions in pure water to produce C10,
It acts to prevent the process in which HCj is generated and the polishing rate becomes unstable, and is an essential component for stable polishing action.According to the above test results, the concentration of tripolyphosphate in the polishing liquid is 1. It can be said that .3wt% or more is necessary. Regarding sodium sulfate, polishing is possible even when it does not contain sodium hypochlorite, sodium tripolyphosphate, and pure water, but sodium sulfate easily dissolves Na+ and SOx in pure water. Since it dissociates into - and has the effect of facilitating other chemical reactions, it is better to mix it.Also, pure water is an essential component because it becomes a solution for the polishing liquid.
なお、以上の実施例は化合物半導体の１ｍである砒化ガ
リウムの研磨についてであるが、燐化ガリウム、燐化イ
ンジウムなどの化合物半導体の研磨における研磨液とし
て使用可能である。Although the above embodiment concerns polishing of 1 m of gallium arsenide compound semiconductor, it can be used as a polishing liquid for polishing compound semiconductors such as gallium phosphide and indium phosphide.
本発明の研磨液は、被加工物に損傷を与えることなく高
精度の研磨加工を可能にする。とくに、砒化ガリウム、
燐化ガリウム、燐化インジウムなどの化合物半導体のメ
カニカルΦケミカルボリジング用の研磨液として格別の
効果を奏する。The polishing liquid of the present invention enables highly accurate polishing without damaging the workpiece. In particular, gallium arsenide,
It is particularly effective as a polishing liquid for mechanical Φ chemical boriding of compound semiconductors such as gallium phosphide and indium phosphide.
第１図は本発明の一実施例の研磨液による研磨の説明図
、第２図は研磨液中の次亜塩素酸ナトリウム濃度と砒化
ガリウム研磨速度との関係を示す図、第３図は研磨液中
のトリポリりん酸ナトリウム濃度と砒化ガリウム研磨速
度との関係を示す図、第４図乃至第６図は本発明の一実
施例の研磨液による研磨機構の説明図である。
（１）：研磨治具。
（２）：砒化ガリウム結晶。
（３）：膜。
（４）：研磨布。
（５）：反応生成物。
代理人 弁理士 則 近 憲 型
開 竹 花 喜久男
第５図
第６１！１Fig. 1 is an explanatory diagram of polishing using a polishing liquid according to an embodiment of the present invention, Fig. 2 is a diagram showing the relationship between the concentration of sodium hypochlorite in the polishing liquid and the gallium arsenide polishing rate, and Fig. 3 is a diagram showing the polishing A diagram showing the relationship between the concentration of sodium tripolyphosphate in the solution and the polishing rate of gallium arsenide, and FIGS. 4 to 6 are explanatory diagrams of a polishing mechanism using a polishing solution according to an embodiment of the present invention. (1): Polishing jig. (2): Gallium arsenide crystal. (3): Membrane. (4): Polishing cloth. (5): Reaction product. Agent Patent Attorney Nori Chika Kikuo Takehana Figure 5 61!1
Claims (1)
ナトリウムと硫酸ナトリウムとを混合してなることを特
徴とする研磨液。A polishing liquid comprising a mixture of at least sodium hypochlorite, sodium tripolyphosphate, and sodium sulfate in water.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62009994A JPS63180467A (en) | 1987-01-21 | 1987-01-21 | Polishing liquid |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62009994A JPS63180467A (en) | 1987-01-21 | 1987-01-21 | Polishing liquid |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63180467A true JPS63180467A (en) | 1988-07-25 |
Family
ID=11735410
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62009994A Pending JPS63180467A (en) | 1987-01-21 | 1987-01-21 | Polishing liquid |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63180467A (en) |
-
1987
- 1987-01-21 JP JP62009994A patent/JPS63180467A/en active Pending
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