JPS63180465A - Polishing liquid - Google Patents
Polishing liquidInfo
- Publication number
- JPS63180465A JPS63180465A JP62009992A JP999287A JPS63180465A JP S63180465 A JPS63180465 A JP S63180465A JP 62009992 A JP62009992 A JP 62009992A JP 999287 A JP999287 A JP 999287A JP S63180465 A JPS63180465 A JP S63180465A
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- gallium arsenide
- sodium
- polishing liquid
- cyanurate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 74
- 239000007788 liquid Substances 0.000 title claims abstract description 27
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 12
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 claims abstract description 8
- 229910052938 sodium sulfate Inorganic materials 0.000 claims abstract description 8
- 235000011152 sodium sulphate Nutrition 0.000 claims abstract description 8
- 235000019832 sodium triphosphate Nutrition 0.000 claims abstract description 8
- 239000011734 sodium Substances 0.000 claims description 8
- 229910052708 sodium Inorganic materials 0.000 claims description 8
- -1 sodium chlorinated cyanurate Chemical class 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract description 23
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 21
- 239000000758 substrate Substances 0.000 abstract description 16
- 239000007795 chemical reaction product Substances 0.000 abstract description 7
- 239000004744 fabric Substances 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 4
- QWPPOHNGKGFGJK-UHFFFAOYSA-N hypochlorous acid Chemical compound ClO QWPPOHNGKGFGJK-UHFFFAOYSA-N 0.000 abstract description 3
- 239000003795 chemical substances by application Substances 0.000 abstract description 2
- 238000007517 polishing process Methods 0.000 abstract description 2
- QHFDHWJHIAVELW-UHFFFAOYSA-M sodium;4,6-dioxo-1h-1,3,5-triazin-2-olate Chemical class [Na+].[O-]C1=NC(=O)NC(=O)N1 QHFDHWJHIAVELW-UHFFFAOYSA-M 0.000 abstract 3
- GOLCXWYRSKYTSP-UHFFFAOYSA-N Arsenious Acid Chemical compound O1[As]2O[As]1O2 GOLCXWYRSKYTSP-UHFFFAOYSA-N 0.000 abstract 2
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 abstract 1
- 239000000047 product Substances 0.000 abstract 1
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 21
- 239000013078 crystal Substances 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 229910003460 diamond Inorganic materials 0.000 description 5
- 239000010432 diamond Substances 0.000 description 5
- 239000006061 abrasive grain Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 150000007973 cyanuric acids Chemical class 0.000 description 4
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000002480 mineral oil Substances 0.000 description 3
- 235000010446 mineral oil Nutrition 0.000 description 3
- 229910005540 GaP Inorganic materials 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 2
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical compound OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- CZIMGECIMULZMS-UHFFFAOYSA-N [W].[Na] Chemical compound [W].[Na] CZIMGECIMULZMS-UHFFFAOYSA-N 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002893 slag Substances 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- UNXRWKVEANCORM-UHFFFAOYSA-N triphosphoric acid Chemical compound OP(O)(=O)OP(O)(=O)OP(O)(O)=O UNXRWKVEANCORM-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の目的〕
（産業上の利用分野）
本発明は、化合物半導体、特に砒化ガリウム単結晶基板
の鏡面研磨に使用する研磨液に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to a polishing liquid used for mirror polishing a compound semiconductor, particularly a gallium arsenide single crystal substrate.
（従来の技術）
砒化ガリウム（ＧａＡｓ ）単結晶基板の研磨加工に用
いる研磨液としては種々のものがあるが、従来より多く
用いられている研磨液には、ダイヤモンドの微細砥粒を
含む鉱物油と、臭素（Ｂｒ）をメチルアルコールに溶解
させたＢｒメタノール溶液がある。(Prior Art) There are various polishing liquids used for polishing gallium arsenide (GaAs) single crystal substrates, but the most commonly used polishing liquid is mineral oil containing fine diamond abrasive grains. There is also a Br methanol solution in which bromine (Br) is dissolved in methyl alcohol.
このうち、ダイヤモンドの微細砥粒を・、含む鉱物油を
用いて、砒化ガリウム単結晶基板を研磨する場合は、ダ
イヤモンドの微細砥粒が砒化ガリウム単結晶基板の表面
を少しずつ除去する過程が繰り返し進行することによっ
て、平滑な表面が作製される。また、 Ｂｒメタノール
溶液を用いて、砒化ガリウム単結晶基板を研磨する場合
は、Ｂｒメタノール溶液が砒化ガリウムと化学反応を起
こし、即ち砒化ガリウムの構成成分であるＧａとＡｓと
を溶液中に溶かし込むいわゆるエツチング反応を起こし
、離合ガリウムを化学的に溶解することによってしだい
に平滑な表面が作製される。When polishing a gallium arsenide single crystal substrate using mineral oil containing diamond fine abrasive grains, the process in which the diamond fine abrasive particles gradually remove the surface of the gallium arsenide single crystal substrate is repeated. By proceeding, a smooth surface is created. In addition, when polishing a gallium arsenide single crystal substrate using a Br methanol solution, the Br methanol solution causes a chemical reaction with gallium arsenide, that is, Ga and As, which are the constituent components of gallium arsenide, are dissolved into the solution. By causing a so-called etching reaction and chemically dissolving the separated gallium, a smooth surface is gradually created.
ところで、前記ダイヤモンドの微細砥粒を含む鉱物油を
用いて砒化ガリウム単結晶基板を研磨する場合には、ダ
イヤモンドの微細砥粒による引っかき傷を基板表面に作
り、研磨加工後の基板表面に引っかき傷からなる損傷を
残留するという欠点があった。また、Ｂｒメタノール溶
液を用いて砒化ガリウム単結晶基板を研磨する場合には
、Ｂｒメタノールが砒化ガリウムを溶かし込む化学反応
による研磨加工であるため、基板表面の形状精度（平面
夏、平行度、表面粗さなど）が悪いという欠点があった
。By the way, when polishing a gallium arsenide single crystal substrate using mineral oil containing the aforementioned fine diamond abrasive grains, scratches are created on the substrate surface by the diamond fine abrasive grains, and scratches are left on the substrate surface after polishing. The disadvantage was that it left behind some damage. In addition, when polishing a gallium arsenide single crystal substrate using a Br methanol solution, the polishing process is based on a chemical reaction in which Br methanol dissolves gallium arsenide. It had the disadvantage of poor roughness, etc.).
（発明が解決しようとする問題点）
本発明は、上記実情にかんがみてなされたもので、その
目的とするところは、研磨加工後の基板表面に引っかき
傷等の損傷を残留することなしに、また、研磨加工後の
基板表面の形状精度が良好となる化合物半導体材料用の
研磨液を提供する −ことにある。(Problems to be Solved by the Invention) The present invention has been made in view of the above-mentioned circumstances, and its purpose is to eliminate damage such as scratches on the surface of the substrate after polishing. Another object of the present invention is to provide a polishing liquid for compound semiconductor materials that provides good shape accuracy on the surface of a substrate after polishing.
（問題点を解決するための手段と作用）化合物半導体材
料の研磨液において、水に少なくとも、塩素化シアヌル
酸ナトリウム（Ｃｓ Ｎｓ Ｏｓ Ｎ”Ｃ’ｘ） ＋ト
リポリりん酸ナトリウム（Ｎａ、Ｐ、０．。）、硫酸ナ
トリウム（Ｎ〜５０４）を混合してなり、損傷を生じる
ことなく１％精度研磨が可能となるものである。(Means and effects for solving the problem) In a polishing solution for compound semiconductor materials, at least sodium chlorinated cyanurate (Cs Ns Os N"C'x) + sodium tripolyphosphate (Na, P, 0 ), sodium sulfate (N~504), and enables polishing with a precision of 1% without causing damage.
（実施例） 以下、本発明の一実施例を図面を参照して詳述する。(Example) Hereinafter, one embodiment of the present invention will be described in detail with reference to the drawings.
本発明の実施例としては、塩素化シアヌル酸ナトリウム
（ジクロルインシアヌル酸ナトリウム）（Ｃｍ Ｎｓ
Ｏｎ Ｎ”Ｃ為）、 ）リボリりん酸ナトリ’ｙ Ａ
（ＮａｇＰｓＯｔｏ）−４ｉｔ＃ｌナトリウム（Ｎａｔ
８０．）を２３．＠、 ３９，９．３８．！ｉ’の割合
で調合したもの、また、上記３禎の薬品を２０ｇ。Examples of the present invention include sodium chlorinated cyanurate (sodium dichloroin cyanurate) (Cm Ns
On N”C), ) Sodium ribophosphate'y A
(NagPsOto)-4it#l Sodium (Nat
80. ) to 23. @, 39, 9.38. ! 20g of the above 3 medicines mixed at the ratio of i'.
３５９、４５９の割合で調合したもののそれぞれを２７
７７ ｃｃの純水に浴触し、それぞれの研磨液を研磨液
ｌ、研磨液２として、試験的に砒化ガリウムの研磨を行
った。第１表に研磨条件を示す。359 and 459 ratios, each of which is 27
Gallium arsenide was experimentally polished using 77 cc of pure water as polishing liquid 1 and polishing liquid 2, respectively. Table 1 shows the polishing conditions.
第１表
しかして、研磨治具（１）に切削された直径７６．２１
１１の砒化ガリウム１取（２）を＠１図の様に５枚はり
つけ、８０ｇｆ／α２の圧力をかけて研磨を行った。第
２回に研磨液１．研磨液２を用いて、砒化ガリウム結晶
片を研磨した場合の研磨液供給量と研磨速度の関係を示
す。この結果、研磨液（Ａ）、研磨液（Ｂ）の双方とも
供給流量の増加に伴い研磨速度は大きくなり、また、研
磨速度はいずれの流量の場合にも研磨液（Ａ）を用いた
方が大きくなっている。これは研磨液（Ａ）が研磨液（
Ｂ）に比べ、塩素化シアヌル酸ナトリウムの割合が多い
からであり、研磨速度を大きくするには塩素化シアヌル
酸の分量を多くすることによって可能である。Firstly, the diameter cut into the polishing jig (1) is 76.21
Five sheets of gallium arsenide No. 11 (2) were attached as shown in Figure @1 and polished by applying a pressure of 80 gf/α2. Polishing liquid 1. The relationship between the supply amount of polishing liquid and the polishing speed when polishing a gallium arsenide crystal piece using polishing liquid 2 is shown. As a result, the polishing speed increases as the supply flow rate increases for both polishing liquid (A) and polishing liquid (B), and at any flow rate, the polishing rate increases when polishing liquid (A) is used. is getting bigger. This means that the polishing liquid (A) is the polishing liquid (
This is because the proportion of sodium chlorinated cyanurate is higher than in B), and the polishing rate can be increased by increasing the amount of chlorinated cyanuric acid.
第３図ないし第５図に、塩素化シアヌル酸、トリポリり
ん酸ナトリウム、硫酸ナトリウム、純水からなる本発明
における研磨液を用いて砒化ガリウムを研磨したときの
研磨モデルを示す。すなわち、塩素化シアヌル酸ナトリ
ウムが純水に溶解することによって生ずる次亜塩素酸（
ＣｔＯ−）によって砒化ガリウム（３）の表面に、Ｇａ
！ｏ３． Ａｓ、 ｏ、からなる反応生成物（４）が形
成され、次いで、研磨布（５）によって前記反応生成物
（４）の一部（他より凸状の部分）が、ぬぐいとられる
。すると、ぬぐいとられた部分は砒化ガリウム面が露出
するため、再度Ｇａ、０．、Ａａ！Ｏ，からなる反応生
成物（６）が形成され、次いで研磨布（５）によってこ
の反応生成物（６）がぬぐい取られる。この過程が繰り
返され行なわれることＫよって研磨が進行し、平滑な鏡
面状態が形成される。FIGS. 3 to 5 show polishing models for polishing gallium arsenide using the polishing liquid of the present invention comprising chlorinated cyanuric acid, sodium tripolyphosphate, sodium sulfate, and pure water. In other words, hypochlorous acid (
Ga on the surface of gallium arsenide (3) by CtO-)
! o3. A reaction product (4) consisting of As, O, is formed, and then a part of the reaction product (4) (the part that is more convex than the rest) is wiped off with a polishing cloth (5). Then, the gallium arsenide surface of the wiped part is exposed, so Ga, 0. , Aa! A reaction product (6) consisting of O, is formed, which is then wiped off with a polishing cloth (5). As this process is repeated, polishing progresses and a smooth mirror surface is formed.
このようにして、研磨が進行するため、本発明における
研磨液を用いての研磨の場合には研磨液として前記ダイ
ヤモンドの微細砥粒を含む鉱物油を用いての研磨におい
て問題となる基板表面に残留する引っかき傷などの損傷
を生ずることなく研磨が可能であり、また、前記Ｂｒメ
タノール溶液を用いての研磨において問題となる基板表
面の形状精度の悪化なしに研磨が可能である。また、研
磨液成分としてのトリポリりん酸ナトリウムは、反応生
成物を生成させる前記次亜塩素酸（ＣＬＯ−）が研磨液
中で一部はＣ＾に他部はＣ幻−に分解し、さらに純水中
の水素イオンと反応して、（Ｊ！、ＨＣＪ−が生成され
研磨速度が不安定になる過程を妨げる作用をし、安定し
た研磨作用をさせるため、必要不可欠な成分である。ま
た、硫酸ナトリウムについては、含まない場合、即ち、
塩素化シアヌル酸ナトリウム、トリポリりん酸、純水か
らなる場合においても研磨可能であるが、硫酸ナトリウ
ムは純水に容易にＮａ＋とＳＯｘ”−に解離し、他の化
学反応を容易にする作用があるため、混合させた方が良
い。As the polishing progresses in this manner, in the case of polishing using the polishing liquid in the present invention, the substrate surface is Polishing is possible without causing damage such as residual scratches, and polishing is also possible without deterioration of the shape accuracy of the substrate surface, which is a problem in polishing using the Br methanol solution. In addition, in sodium tripolyphosphate as a polishing liquid component, the above-mentioned hypochlorous acid (CLO-), which generates a reaction product, decomposes in the polishing liquid, partially into C^ and the other part into C-, and further. It reacts with hydrogen ions in pure water to prevent the process of generating (J!, HCJ-, which makes the polishing rate unstable), and is an essential component in order to achieve a stable polishing action. , for sodium sulfate, if not included, i.e.
Polishing is also possible with a mixture of sodium chloride cyanurate, tripolyphosphoric acid, and pure water, but sodium sulfate easily dissociates into Na+ and SOx"- in pure water, and has the effect of facilitating other chemical reactions. Therefore, it is better to mix them.
また、純水については、研磨欣の溶液となるためこれも
必要不可欠な成分である。また、本発明に８ける研磨液
は、塩素化シアヌル酸、トリポリりん酸ナトリウム、硫
酸ナトリウム、純水心らなっているため、塩素化シアヌ
ル戚、トリポリりん酸ナトリウム、Ｗ酸ナトリウムが固
体状薬品であるので、保存時においてはこの３ａ［のみ
をあらかじめ調合しておき、研磨液として使用するさい
に純水に溶解して使用することができる。Furthermore, pure water is also an essential component as it becomes a solution for the polishing slag. Furthermore, since the polishing liquid according to the present invention consists of chlorinated cyanuric acid, sodium tripolyphosphate, sodium sulfate, and pure water, the chlorinated cyanuric acid family, sodium tripolyphosphate, and sodium tungsten are solid chemicals. Therefore, during storage, only 3a can be prepared in advance, and when used as a polishing liquid, it can be used by dissolving it in pure water.
なお、以上の実施例は化合物半導体の１種である砒化ガ
リウムの研磨についてであるが、燐化ガリウム、燐化イ
ンジウムなどの化合物半導体の研磨における研磨液どし
て使用可能である。Note that although the above embodiment concerns polishing gallium arsenide, which is a type of compound semiconductor, it can be used as a polishing liquid for polishing compound semiconductors such as gallium phosphide and indium phosphide.
〔発明の効果〕 番
本発明の研磨液は、被加工物に損傷を与えることなく、
高精度の研磨加工を可能とする。ことに、砒化ガリウム
、燐化ガリウム１１１化インジウムなどの化合物半導体
のメカニカル−ケミカルボリジング用の研ｍ液として格
別の効果を奏する。[Effects of the Invention] The polishing liquid of the present invention can be used without damaging the workpiece.
Enables high-precision polishing. In particular, it is particularly effective as a polishing solution for mechanical-chemical boriding of compound semiconductors such as gallium arsenide, gallium phosphide, and indium 111ide.
第１図は本発明の一実施例の研磨液による研磨の説明図
、第２図は同じく研磨液供給量と研磨速度との関係を示
すグラフ、第３図ないし第５図は同じく研磨機構を示す
図である。
（１）：研磨治具。
（２）：砒化ガリウム基板。
ｔ４） 、 （６） ：反応生成物。
（５）：研磨布。
代理人 弁理士 則 近 憲 重
囲 竹 花 喜久男
１１ＬＨ
第５図
Ａ’Ａ Ａ４針流量 （ｍ）ｋｎｌ’ｎ ）第 ２ 国Fig. 1 is an explanatory diagram of polishing using a polishing liquid according to an embodiment of the present invention, Fig. 2 is a graph showing the relationship between the supply amount of the polishing liquid and the polishing speed, and Figs. 3 to 5 similarly illustrate the polishing mechanism. FIG. (1): Polishing jig. (2): Gallium arsenide substrate. t4), (6): reaction product. (5): Polishing cloth. Agent Patent Attorney Nori Ken Ken Shigeki Takehana Kikuo 11LH Figure 5 A'A A4 needle flow rate (m)knl'n) 2nd country
Claims (1)
りん酸ナトリウムと硫酸ナトリウムとを混合してなるこ
とを特徴とする研磨液。A polishing liquid comprising a mixture of at least sodium chlorinated cyanurate, sodium tripolyphosphate, and sodium sulfate in water.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62009992A JPS63180465A (en) | 1987-01-21 | 1987-01-21 | Polishing liquid |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62009992A JPS63180465A (en) | 1987-01-21 | 1987-01-21 | Polishing liquid |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63180465A true JPS63180465A (en) | 1988-07-25 |
Family
ID=11735356
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62009992A Pending JPS63180465A (en) | 1987-01-21 | 1987-01-21 | Polishing liquid |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63180465A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6384872A (en) * | 1986-09-29 | 1988-04-15 | Nissan Chem Ind Ltd | Polishing agent for iii-v compound semiconductor |
-
1987
- 1987-01-21 JP JP62009992A patent/JPS63180465A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6384872A (en) * | 1986-09-29 | 1988-04-15 | Nissan Chem Ind Ltd | Polishing agent for iii-v compound semiconductor |
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