JPS6384872A - Polishing agent for iii-v compound semiconductor - Google Patents
Polishing agent for iii-v compound semiconductorInfo
- Publication number
- JPS6384872A JPS6384872A JP61230446A JP23044686A JPS6384872A JP S6384872 A JPS6384872 A JP S6384872A JP 61230446 A JP61230446 A JP 61230446A JP 23044686 A JP23044686 A JP 23044686A JP S6384872 A JPS6384872 A JP S6384872A
- Authority
- JP
- Japan
- Prior art keywords
- polishing agent
- polishing
- acid salt
- sodium
- alkali metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 37
- 239000004065 semiconductor Substances 0.000 title claims description 20
- 150000001875 compounds Chemical class 0.000 title claims description 15
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 14
- 238000002156 mixing Methods 0.000 claims abstract description 5
- 229910000318 alkali metal phosphate Inorganic materials 0.000 claims description 12
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 9
- 150000007973 cyanuric acids Chemical class 0.000 claims description 8
- 229910052936 alkali metal sulfate Inorganic materials 0.000 claims description 7
- 150000003467 sulfuric acid derivatives Chemical class 0.000 claims description 6
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical group [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 claims description 4
- 239000001577 tetrasodium phosphonato phosphate Substances 0.000 claims description 4
- LWIHDJKSTIGBAC-UHFFFAOYSA-K tripotassium phosphate Chemical compound [K+].[K+].[K+].[O-]P([O-])([O-])=O LWIHDJKSTIGBAC-UHFFFAOYSA-K 0.000 claims description 4
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims description 3
- MOMKYJPSVWEWPM-UHFFFAOYSA-N 4-(chloromethyl)-2-(4-methylphenyl)-1,3-thiazole Chemical compound C1=CC(C)=CC=C1C1=NC(CCl)=CS1 MOMKYJPSVWEWPM-UHFFFAOYSA-N 0.000 claims description 2
- 229910005542 GaSb Inorganic materials 0.000 claims description 2
- 150000008064 anhydrides Chemical class 0.000 claims description 2
- CEJLBZWIKQJOAT-UHFFFAOYSA-N dichloroisocyanuric acid Chemical compound ClN1C(=O)NC(=O)N(Cl)C1=O CEJLBZWIKQJOAT-UHFFFAOYSA-N 0.000 claims description 2
- 229910000160 potassium phosphate Inorganic materials 0.000 claims description 2
- 235000011009 potassium phosphates Nutrition 0.000 claims description 2
- IFIDXBCRSWOUSB-UHFFFAOYSA-N potassium;1,3-dichloro-1,3,5-triazinane-2,4,6-trione Chemical compound [K+].ClN1C(=O)NC(=O)N(Cl)C1=O IFIDXBCRSWOUSB-UHFFFAOYSA-N 0.000 claims description 2
- FQENQNTWSFEDLI-UHFFFAOYSA-J sodium diphosphate Chemical compound [Na+].[Na+].[Na+].[Na+].[O-]P([O-])(=O)OP([O-])([O-])=O FQENQNTWSFEDLI-UHFFFAOYSA-J 0.000 claims description 2
- GCLGEJMYGQKIIW-UHFFFAOYSA-H sodium hexametaphosphate Chemical compound [Na]OP1(=O)OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])O1 GCLGEJMYGQKIIW-UHFFFAOYSA-H 0.000 claims description 2
- 235000019982 sodium hexametaphosphate Nutrition 0.000 claims description 2
- 235000019983 sodium metaphosphate Nutrition 0.000 claims description 2
- 239000001488 sodium phosphate Substances 0.000 claims description 2
- 229910000162 sodium phosphate Inorganic materials 0.000 claims description 2
- 235000011008 sodium phosphates Nutrition 0.000 claims description 2
- 229940048086 sodium pyrophosphate Drugs 0.000 claims description 2
- 229910052938 sodium sulfate Inorganic materials 0.000 claims description 2
- 235000011152 sodium sulphate Nutrition 0.000 claims description 2
- 235000019832 sodium triphosphate Nutrition 0.000 claims description 2
- 235000019818 tetrasodium diphosphate Nutrition 0.000 claims description 2
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical group [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 claims description 2
- 229910005540 GaP Inorganic materials 0.000 claims 1
- 229910000673 Indium arsenide Inorganic materials 0.000 claims 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 abstract description 5
- 239000000460 chlorine Substances 0.000 abstract description 5
- 229910052801 chlorine Inorganic materials 0.000 abstract description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical class OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 abstract 4
- 239000002184 metal Substances 0.000 abstract 4
- 150000003016 phosphoric acids Chemical class 0.000 abstract 4
- OWIKHYCFFJSOEH-UHFFFAOYSA-N Isocyanic acid Chemical compound N=C=O OWIKHYCFFJSOEH-UHFFFAOYSA-N 0.000 abstract 3
- XLJMAIOERFSOGZ-UHFFFAOYSA-N anhydrous cyanic acid Natural products OC#N XLJMAIOERFSOGZ-UHFFFAOYSA-N 0.000 abstract 3
- 238000000034 method Methods 0.000 description 11
- 239000007864 aqueous solution Substances 0.000 description 10
- 239000000126 substance Substances 0.000 description 5
- 230000005693 optoelectronics Effects 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 239000003082 abrasive agent Substances 0.000 description 3
- 230000002378 acidificating effect Effects 0.000 description 3
- 238000003486 chemical etching Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- 229920005830 Polyurethane Foam Polymers 0.000 description 1
- 229920000297 Rayon Polymers 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- MGNCLNQXLYJVJD-UHFFFAOYSA-N cyanuric chloride Chemical compound ClC1=NC(Cl)=NC(Cl)=N1 MGNCLNQXLYJVJD-UHFFFAOYSA-N 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 150000004677 hydrates Chemical class 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000002075 main ingredient Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- -1 organic acid salts Chemical class 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000011496 polyurethane foam Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000002964 rayon Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、発光ダイオード、半導体レーザー、電子デバ
イス、光電子集積回路等に用いられる周期率表の第ｍ−
ｖ族物質から成る化合物半導体の化学的及び機械的研磨
に用いる研磨剤に関する。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention is directed to light emitting diodes, semiconductor lasers, electronic devices, optoelectronic integrated circuits, etc.
The present invention relates to a polishing agent used for chemical and mechanical polishing of compound semiconductors made of group V materials.
更に詳しく述べると、使用時に水溶液とし、第ｍ−ｖ族
物質例えばＧ ａ Ａ ｓ ｓ Ｇ ａ Ｐ ｓ Ｉ
ｎ Ａ ｓ −。More specifically, when used, it is made into an aqueous solution, and a group m-v substance such as Ga As s Ga P s I
nA s-.
ＩｎＰ等から成る化合物半導体の表面研磨をスクラッチ
及び傷の発生が少なく高速鏡面仕上げ加工を成らしめる
研磨剤に関する。The present invention relates to an abrasive that can polish the surface of a compound semiconductor made of InP or the like to a high-speed mirror finish with less occurrence of scratches and flaws.
（従来の技術）
エレクトロニクス技術はシリコン半導体によるＩＣ回路
によるコンピュータ技術が社会的ニーズへの対応に限界
がある事から、シリコンデバイス性能を越えた第ｍ−ｖ
族化合物半導体による光電子集積回路、高速電子デバイ
ス、オプトエレクトロニクスデバイス等が注目されてい
る。(Conventional technology) Electronics technology has reached the m-v range beyond the performance of silicon devices because computer technology based on IC circuits using silicon semiconductors has limitations in responding to social needs.
Optoelectronic integrated circuits, high-speed electronic devices, optoelectronic devices, etc. using group compound semiconductors are attracting attention.
第ｍ−ｖ族化合物半導体としてはＧａＡｓ、ＧａＰ、Ｇ
ａｒｂ、ＡＩＰ、ＡＩＡＳ％ ＩｎＡｓ１１ｎＰ、Ｉｎ
５ｂＳＧａＡＩＡｓ、ＧａＡｓＰ等が挙げられる。また
それらの用途は発光ダイオード、半導体レーザー、太陽
電池、マイクロ波ダイオード、光電子集積回路及び磁気
半導体素子等極めて広範囲である。Examples of m-v group compound semiconductors include GaAs, GaP, and G.
arb, AIP, AIAS% InAs11nP, In
Examples include 5bSGaAIAs, GaAsP, and the like. Moreover, their applications are extremely wide-ranging, including light-emitting diodes, semiconductor lasers, solar cells, microwave diodes, optoelectronic integrated circuits, and magnetic semiconductor devices.
上述の第ｍ−ｖ族の化合物の中でもＧａＡｓはＩＣ基板
とデバイスの両分野で開発が積極的に行われている。こ
れらの用途の為のＧａＡｓ基板の工業的製法は、ボート
法或いは引き上げ法等で、ＧａＡｓのバルク結晶成長さ
せ、その様にして得られた塊からスライス、ウェファ−
を得て機械適研磨と化学的エチングを組み合わせた研摩
法で鏡面仕上げが行れている。Among the m-v group compounds mentioned above, GaAs is actively being developed in both the fields of IC substrates and devices. The industrial method for manufacturing GaAs substrates for these uses is to grow GaAs bulk crystals using a boat method or pulling method, and then slice and wafer the resulting lumps.
A mirror finish is achieved using a polishing method that combines mechanical polishing and chemical etching.
この化合物半導体の研磨法としては従来から下記の方法
が用いられている。Conventionally, the following method has been used as a polishing method for compound semiconductors.
自由回転するスピンドルで支持されている集積用ブロッ
クに研磨すべく半導体のウェハーまたはスライスを固定
する。これを、回転するターンテーブルに支持されてい
るポリウレタン製研磨布に押し付けることで行われるが
、この際に高速、平滑化を目的として化学的エツチング
を組み合わせる。この化学的エツチングの方法としては
、半導体表面と反応して機械研磨により表面から除去可
能とならしめる化学的研磨剤が選ばれる。A semiconductor wafer or slice is secured for polishing to an integration block supported by a freely rotating spindle. This is done by pressing it against a polyurethane polishing cloth supported on a rotating turntable, and at this time chemical etching is also combined for high speed and smoothing purposes. For this chemical etching method, a chemical polishing agent is chosen which reacts with the semiconductor surface and makes it possible to remove it from the surface by mechanical polishing.
従来から知られている化学的研磨剤としては次のような
ものがある。Conventionally known chemical polishing agents include the following.
■有効塩素２．４〜４．６ ｇ ／ ｊ！のＮａＣｌ０
１Ｋｃｉｏ水溶液と炭酸ソーダ（米国特許３３４２６５
２号）
■０．００１〜０．０５％のＢｒ、を溶解するメタノー
ル液、（英国特許９４５９３３号）■塩化シアヌルをア
ルカリ水溶液に溶解した溶液。（特開昭５７−１９６７
２３号）
■酸性条件下で塩素を遊離する化合物の水溶液を使用（
特公昭５７−３５５７４）
〔発明が解決すべき問題点〕
上述の従来のＧａＡｓの化学的研磨剤のうち、■ではＮ
ａＣｊ！Ｏの濃度が高い場合には加工速度は高いが、表
面が酸化される欠点があった。また■では危険度の高い
Ｂｒ、を用いるし、また加工度が遅い欠点がある。■は
水溶液の安定性が低く研磨速度が極端に遅い欠点がある
。■は研磨時に酸性水溶液を使用するため、有効塩素の
安定性が低（なる。また特に酸性条件下ではウェハーの
表面にスクラッチを生ずる欠点がある。■Effective chlorine 2.4-4.6 g/j! of NaCl0
1Kcio aqueous solution and soda carbonate (US Patent 334265)
No. 2) ■ A methanol solution that dissolves 0.001 to 0.05% Br. (British Patent No. 945933) ■ A solution in which cyanuric chloride is dissolved in an alkaline aqueous solution. (Unexamined Japanese Patent Publication No. 57-1967
No. 23) ■Using an aqueous solution of a compound that liberates chlorine under acidic conditions (
(Japanese Patent Publication No. 57-35574) [Problems to be solved by the invention] Among the conventional chemical polishing agents for GaAs mentioned above, in
aCj! When the concentration of O is high, the processing speed is high, but there is a drawback that the surface is oxidized. In addition, method (2) uses Br, which is highly dangerous, and also has the drawback of slow processing. (2) has the disadvantage that the aqueous solution has low stability and the polishing speed is extremely slow. Method (2) uses an acidic aqueous solution during polishing, so the stability of available chlorine is low.It also has the disadvantage of causing scratches on the surface of the wafer, especially under acidic conditions.
本発明は、この従来の問題点を解決するために従来に無
い新しい研磨剤を提供することを目的とするものである
。The object of the present invention is to provide a new abrasive that has not been seen before in order to solve these conventional problems.
本発明者等は上述の問題点を解決するために鋭意検討の
結果、塩素化イソシアヌル酸のアルカリ性水溶液が、加
工速度も早く、スクラッチの発生も少なく非常に優れた
鏡面が得られることを見出し本発明の研磨剤を見出した
。In order to solve the above-mentioned problems, the inventors of the present invention conducted extensive research and discovered that an alkaline aqueous solution of chlorinated isocyanuric acid can be used at a high processing speed and produces an excellent mirror surface with few scratches. We have discovered an inventive abrasive.
即ち、本発明は塩素化イソシアヌル酸、アルカリ金属の
燐酸塩と硫酸塩を主成分とし、その配合比は塩素化イソ
シアヌル酸が１０〜４０重量％、アルカリ金属の燐酸塩
と硫酸塩が６０〜９０重量％であり、且つアルカリ金属
の燐酸塩は硫酸塩１重量部に対して０．３〜２重量部で
あることを特徴とする第ｍ−ｖ族化合物半導体の研磨剤
に関する。That is, the main components of the present invention are chlorinated isocyanuric acid, alkali metal phosphates and sulfates, and the blending ratio is 10 to 40% by weight of chlorinated isocyanuric acid and 60 to 90% by weight of alkali metal phosphates and sulfates. % by weight, and the alkali metal phosphate is present in an amount of 0.3 to 2 parts by weight per 1 part by weight of the sulfate.
以下更に本発明の詳細な説明する。The present invention will be further explained in detail below.
第ｍ−ｖ族化合物化合物半導体としては先にも述べたが
、ＧａＡｓ、ＧａＰ５ ＧａＳｂ、ＡＩ Ｐ％ＡｌＡｓ
、ＩｎＡｓ５ＩｎＰ、ＩｎＳｂ、ＧａＡｌＡ３％ Ｇａ
ＡｓＰ等が挙げられる。As mentioned earlier, the m-v group compound semiconductors include GaAs, GaP5 GaSb, AI P%AlAs
, InAs5InP, InSb, GaAlA3% Ga
Examples include AsP.
本発明で使用する主成分である塩素化イソシアヌル酸と
してはジクロロイソシアヌル酸ナトリウムの無水物及び
水和物、或いはジクロロイソシアヌル酸カリウムが好ま
しい。他の主成分であるアルカリ金属の燐酸塩と硫酸塩
としてはつぎのものが使用される。アルカリ金属の燐酸
塩としては燐酸ナトリウム、燐酸カリウム、トリポリ燐
酸ナトリウム、ヘキサメタ燐酸ナトリウム、ピロ燐酸ナ
トリウム、メタ燐酸ナトリウム等が挙げられる。As the chlorinated isocyanuric acid which is the main component used in the present invention, anhydrides and hydrates of sodium dichloroisocyanurate, or potassium dichloroisocyanurate are preferable. The following are used as the other main ingredients, alkali metal phosphates and sulfates. Examples of the alkali metal phosphates include sodium phosphate, potassium phosphate, sodium tripolyphosphate, sodium hexametaphosphate, sodium pyrophosphate, and sodium metaphosphate.
またアルカリ金属の燐酸塩としては無水硫酸ナトリウム
、水和硫酸ナトリウムが好ましい。Further, as the alkali metal phosphate, anhydrous sodium sulfate and hydrated sodium sulfate are preferable.
これらの主成分の配合比は、塩素化イソシアヌル酸１０
〜４０重量％、アルカリ金属の燐酸塩と硫酸塩６０〜９
０重量％であり、且つアルカリ金属の燐酸塩は硫酸塩１
ｊｌｉｉ部に対して０．３〜２重量部である。The blending ratio of these main components is 10 parts of chlorinated isocyanuric acid
~40% by weight, alkali metal phosphates and sulfates 60-9
0% by weight, and the alkali metal phosphate is sulfate 1
The amount is 0.3 to 2 parts by weight per part Jlii.
本発明の研磨剤は使用時には水に溶解させしようするの
だが、その際の活性塩素の濃度は０．２〜１．０になる
ようにする。When the polishing agent of the present invention is used, it is intended to be dissolved in water, and the concentration of active chlorine at that time is adjusted to 0.2 to 1.0.
このように水溶液を調整した時に研磨材水溶液のｐＨは
８．５〜９．５のアルカリ性になる。When the aqueous solution is adjusted in this manner, the abrasive aqueous solution has an alkaline pH of 8.5 to 9.5.
本発明の研磨材はこれらの主成分の他にシリカ粉末、シ
リカゾル或いは有機酸の塩又は無機塩等を添加しても良
い。In addition to these main components, the abrasive material of the present invention may contain silica powder, silica sol, organic acid salts, inorganic salts, and the like.
以下に本発明を実施例で更に詳しく説明するが、本発明
の技術的範囲はこれに限定されるものではない。The present invention will be explained in more detail below with reference to Examples, but the technical scope of the present invention is not limited thereto.
実施例１〜８及び比較例１〜９
表−１に示す研磨剤を調合し、その２％水溶液でＧａＡ
ｓの研磨効果を調べた。結果を併せて表−１に示す。研
磨方法は半導体基板の研磨テストに使用されるテスト装
置を用いつぎのような条件で行い、研磨効果の評価方法
も以下に記す。Examples 1 to 8 and Comparative Examples 1 to 9 The abrasives shown in Table 1 were prepared, and a 2% aqueous solution thereof was used to polish GaA.
The polishing effect of s was investigated. The results are also shown in Table-1. The polishing method was performed under the following conditions using a test device used for semiconductor substrate polishing tests, and the method for evaluating the polishing effect is also described below.
比較例として表−２に示す研磨材を用い実施例と同様に
評価を行った。As a comparative example, the abrasives shown in Table 2 were used and evaluated in the same manner as in the examples.
研磨用パッド；ポリウレタンフォーム
回転速度：４５０ｒｐｍ
ウェハー；＜１００＞ＧａＡｓ４．６〜５．１ｃｍウェ
ハー保持バット；レーヨン布
研磨液供給速度； ３０〜５０ｍｌ ７ｍ”、ｍ ｉ
ｎ（ウェハーの単位面積当たり）
ウェハー保持圧；約２Ｋｇ／ｃｍ”
〔研磨効果の評価方法〕
研磨速度；研磨前と研磨後のＧａＡｓのウェハーの厚み
を測定し、ウェハーストイツク除去速度即ち１分間当た
りの研磨速度の３回の平均値より算出した。結果を表−
１及び表−２に示す。Polishing pad; polyurethane foam rotation speed: 450 rpm Wafer; <100> GaAs 4.6-5.1 cm wafer holding bat; rayon cloth polishing liquid supply rate; 30-50 ml 7 m", m i
n (per unit area of wafer) Wafer holding pressure: Approximately 2 kg/cm" [Method for evaluating polishing effect] Polishing speed: Measure the thickness of the GaAs wafer before and after polishing, and determine the wafer stock removal rate, that is, 1 minute. Calculated from the average value of the three polishing speeds.The results are shown in Table-
1 and Table 2.
スクラッチの発生程度の評価；微分緩衝型顕微鏡を用い
てウェファ−表面を観察した。また暗室に於いて、黒い
紙の上に研磨後のウェファ−を置き斜めから集光灯によ
り光を照射し、鏡面で反射せしめ、表面の乱反射の有無
の程度によりスクラッチの発生の程度を調べた。Evaluation of the degree of scratch occurrence: The wafer surface was observed using a differential buffer microscope. In addition, in a dark room, the polished wafer was placed on black paper and light was irradiated diagonally with a condensing lamp to reflect it off the mirror surface, and the degree of scratch generation was examined by the presence or absence of diffuse reflection on the surface. .
結果を表−１及び表−２に示す。The results are shown in Table-1 and Table-2.
評価結果の記号は以下の意味である。The symbols in the evaluation results have the following meanings.
○ スクラッチ全くない。○ There are no scratches at all.
口 〃 極めて少ない △ ｊ かなり少ない × 〃 幾分多い ×× ＃ かなり多いMouth: Very few △ ｀ Quite few × Somewhat more XX ＃ Quite a lot
Claims (5)
硫酸塩を主成分とし、その配合比は塩素化イソシアヌル
酸が１０〜４０重量％、アルカリ金属の燐酸塩と硫酸塩
が６０〜９０重量％であり、且つアルカリ金属の燐酸塩
は硫酸塩１重量部に対して０．３〜２重量部であること
を特徴とする第III−Ｖ族化合物半導体の研磨剤。(1) Chlorinated isocyanuric acid, mainly composed of alkali metal phosphates and sulfates, with a blending ratio of 10 to 40% by weight of chlorinated isocyanuric acid and 60 to 90% by weight of alkali metal phosphates and sulfates. A polishing agent for Group III-V compound semiconductors, characterized in that the alkali metal phosphate is present in an amount of 0.3 to 2 parts by weight per 1 part by weight of the sulfate.
ＧａＳｂ、ＡｌＰ、ＡｌＡｓ、ＩｎＡｓ、ＩｎＰ、Ｉｎ
Ｓｂ、ＧａＡｌＡｓ、ＧａＡｓＰであることを特徴とす
る特許請求の範囲第（１）項記載の第III−Ｖ族化合物
半導体の研磨剤。(2) Group III-V compound semiconductor is GaAs, GaP,
GaSb, AlP, AlAs, InAs, InP, In
A polishing agent for Group III-V compound semiconductors according to claim (1), characterized in that the polishing agent is Sb, GaAlAs, or GaAsP.
ナトリウムの無水物及び水和物、或いはジクロロイソシ
アヌル酸カリウムであることを特徴とする特許請求の範
囲第（１）項記載の第III−Ｖ族化合物半導体の研磨剤
。(3) The Group III-V compound semiconductor according to claim (1), wherein the chlorinated isocyanuric acid is an anhydride or hydrate of sodium dichloroisocyanurate, or potassium dichloroisocyanurate. abrasive.
リウム、トリポリ燐酸ナトリウム、ヘキサメタ燐酸ナト
リウム、ピロ燐酸ナトリウム、メタ燐酸ナトリウムであ
ることを特徴とする特許請求の範囲第（１）項記載の第
III−Ｖ族化合物半導体の研磨剤。(4) The claim set forth in claim (1), wherein the alkali metal phosphate is sodium phosphate, potassium phosphate, sodium tripolyphosphate, sodium hexametaphosphate, sodium pyrophosphate, or sodium metaphosphate.
Polishing agent for III-V compound semiconductors.
和硫酸ナトリウムであることを特徴とする特許請求の範
囲第（１）項記載の第III−Ｖ族化合物半導体の研磨剤
。(5) A polishing agent for Group III-V compound semiconductors according to claim (1), wherein the alkali metal sulfate is anhydrous sodium sulfate or hydrated sodium sulfate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61230446A JPH0767666B2 (en) | 1986-09-29 | 1986-09-29 | Group III-V compound semiconductor polishing agent |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61230446A JPH0767666B2 (en) | 1986-09-29 | 1986-09-29 | Group III-V compound semiconductor polishing agent |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6384872A true JPS6384872A (en) | 1988-04-15 |
| JPH0767666B2 JPH0767666B2 (en) | 1995-07-26 |
Family
ID=16908013
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61230446A Expired - Lifetime JPH0767666B2 (en) | 1986-09-29 | 1986-09-29 | Group III-V compound semiconductor polishing agent |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0767666B2 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63180465A (en) * | 1987-01-21 | 1988-07-25 | Toshiba Corp | Polishing liquid |
| US5032203A (en) * | 1988-01-22 | 1991-07-16 | Nippon Telegraph & Telephone Corp. | Apparatus for polishing |
| JP2006210298A (en) * | 2004-12-27 | 2006-08-10 | Moshi:Kk | Ultraviolet lamp |
| JP2007067153A (en) * | 2005-08-31 | 2007-03-15 | Yamaguchi Seiken Kogyo Kk | Semiconductor wafer polishing solution composition and method for polishing semiconductor wafer |
| JP2009164634A (en) * | 2001-06-08 | 2009-07-23 | Cree Inc | High surface quality gan wafer, and method of manufacturing the same |
| EP1997587A3 (en) * | 2007-05-29 | 2010-01-20 | Sumitomo Electric Industries, Ltd. | Method of polishing compound semiconductor substrate, compound semiconductor substrate, method of manufacturing compound semiconductor epitaxial substrate, and compound semiconductor epitaxial substrate |
| JP2013115151A (en) * | 2011-11-25 | 2013-06-10 | Fujimi Inc | Polishing composition |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5035387B2 (en) | 2010-05-10 | 2012-09-26 | 住友電気工業株式会社 | Abrasive, compound semiconductor manufacturing method and semiconductor device manufacturing method |
-
1986
- 1986-09-29 JP JP61230446A patent/JPH0767666B2/en not_active Expired - Lifetime
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63180465A (en) * | 1987-01-21 | 1988-07-25 | Toshiba Corp | Polishing liquid |
| US5032203A (en) * | 1988-01-22 | 1991-07-16 | Nippon Telegraph & Telephone Corp. | Apparatus for polishing |
| JP2009164634A (en) * | 2001-06-08 | 2009-07-23 | Cree Inc | High surface quality gan wafer, and method of manufacturing the same |
| JP2014042067A (en) * | 2001-06-08 | 2014-03-06 | Cree Inc | HIGH SURFACE QUALITY GaN WAFER, AND METHOD OF MANUFACTURING THE SAME |
| JP2014042068A (en) * | 2001-06-08 | 2014-03-06 | Cree Inc | HIGH SURFACE QUALITY GaN WAFER, AND METHOD OF MANUFACTURING THE SAME |
| JP2006210298A (en) * | 2004-12-27 | 2006-08-10 | Moshi:Kk | Ultraviolet lamp |
| JP2007067153A (en) * | 2005-08-31 | 2007-03-15 | Yamaguchi Seiken Kogyo Kk | Semiconductor wafer polishing solution composition and method for polishing semiconductor wafer |
| JP4555752B2 (en) * | 2005-08-31 | 2010-10-06 | 山口精研工業株式会社 | Semiconductor wafer polishing liquid composition and semiconductor wafer polishing method |
| EP1997587A3 (en) * | 2007-05-29 | 2010-01-20 | Sumitomo Electric Industries, Ltd. | Method of polishing compound semiconductor substrate, compound semiconductor substrate, method of manufacturing compound semiconductor epitaxial substrate, and compound semiconductor epitaxial substrate |
| US8133815B2 (en) * | 2007-05-29 | 2012-03-13 | Sumitomo Electric Industries, Ltd. | Method of polishing compound semiconductor substrate, compound semiconductor substrate, method of manufacturing compound semiconductor epitaxial substrate, and compound semiconductor epitaxial substrate |
| JP2013115151A (en) * | 2011-11-25 | 2013-06-10 | Fujimi Inc | Polishing composition |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0767666B2 (en) | 1995-07-26 |
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