JPS63180466A - Polishing liquid - Google Patents
Polishing liquidInfo
- Publication number
- JPS63180466A JPS63180466A JP62009993A JP999387A JPS63180466A JP S63180466 A JPS63180466 A JP S63180466A JP 62009993 A JP62009993 A JP 62009993A JP 999387 A JP999387 A JP 999387A JP S63180466 A JPS63180466 A JP S63180466A
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- gallium arsenide
- mirror
- polishing liquid
- reaction product
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 76
- 239000007788 liquid Substances 0.000 title claims abstract description 25
- ZKQDCIXGCQPQNV-UHFFFAOYSA-N Calcium hypochlorite Chemical compound [Ca+2].Cl[O-].Cl[O-] ZKQDCIXGCQPQNV-UHFFFAOYSA-N 0.000 claims abstract description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000007844 bleaching agent Substances 0.000 claims abstract description 10
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 claims abstract description 9
- 229910052938 sodium sulfate Inorganic materials 0.000 claims abstract description 9
- 235000011152 sodium sulphate Nutrition 0.000 claims abstract description 9
- 235000019832 sodium triphosphate Nutrition 0.000 claims abstract description 9
- 239000000203 mixture Substances 0.000 claims description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract description 24
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 23
- 239000000758 substrate Substances 0.000 abstract description 15
- 239000007795 chemical reaction product Substances 0.000 abstract description 9
- 238000000034 method Methods 0.000 abstract description 4
- 239000004744 fabric Substances 0.000 abstract description 3
- 238000007517 polishing process Methods 0.000 abstract description 2
- GOLCXWYRSKYTSP-UHFFFAOYSA-N Arsenious Acid Chemical compound O1[As]2O[As]1O2 GOLCXWYRSKYTSP-UHFFFAOYSA-N 0.000 abstract 2
- 238000002156 mixing Methods 0.000 abstract 2
- 238000004061 bleaching Methods 0.000 abstract 1
- 238000010494 dissociation reaction Methods 0.000 abstract 1
- 230000005593 dissociations Effects 0.000 abstract 1
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 abstract 1
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 21
- 239000013078 crystal Substances 0.000 description 11
- 239000000843 powder Substances 0.000 description 7
- 239000006061 abrasive grain Substances 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 229910003460 diamond Inorganic materials 0.000 description 6
- 239000010432 diamond Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 239000011575 calcium Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000002480 mineral oil Substances 0.000 description 3
- 235000010446 mineral oil Nutrition 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910005540 GaP Inorganic materials 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- -1 hydrogen ions Chemical class 0.000 description 1
- QWPPOHNGKGFGJK-UHFFFAOYSA-N hypochlorous acid Chemical compound ClO QWPPOHNGKGFGJK-UHFFFAOYSA-N 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 210000003127 knee Anatomy 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の目的〕
（産業上の利用分野）
本発明は、化合物半導体、特に砒化ガリウム単結晶基板
の鏡面研磨に使用する研磨液に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to a polishing liquid used for mirror polishing a compound semiconductor, particularly a gallium arsenide single crystal substrate.
（従来の技術）
砒化ガリウム（Ｇａ Ａｓ ）単結晶基板の研磨加工に
用いる研磨液としては種々のものがあるが、従来より多
く用いられている研磨液には、ダイヤモンドの微細砥粒
を含む鉱物油と、臭素（Ｂｒ ）をメチルアルコールに
溶解させたＢｒメタノール溶液がある。このうち、ダイ
ヤモンドの微細砥粒を含む鉱物油を用いて、砒化ガリウ
ム単結晶基板を研磨する場合は、ダイヤモンドの微細砥
粒が砒化ガリウム単結晶基板の表面を少しずつ除去する
過程が繰り返し進行することによって、平滑な表面が作
製される。また、Ｂｒメタノール溶液を用いて、砒化ガ
リウム単結晶基板を研磨する場合は、Ｂｒメタノール溶
液が砒化ガリウムと化学反応を起こし、即ち砒化ガリウ
ムの構成成分であるＧａと胎とを溶液中に溶かし込むい
わゆるエツチング反応を起こし、離合ガリウムを化学的
に溶解することによってしだいに平滑な表面が作製され
る。(Prior Art) There are various polishing liquids used for polishing gallium arsenide (GaAs) single crystal substrates, but the polishing liquid that has been commonly used conventionally uses minerals containing fine diamond abrasive grains. There is an oil and a Br methanol solution in which bromine (Br) is dissolved in methyl alcohol. Among these, when polishing a gallium arsenide single crystal substrate using mineral oil containing fine diamond abrasive grains, the process in which the diamond fine abrasive grains gradually remove the surface of the gallium arsenide single crystal substrate progresses repeatedly. This creates a smooth surface. In addition, when polishing a gallium arsenide single crystal substrate using a Br methanol solution, the Br methanol solution causes a chemical reaction with gallium arsenide, that is, Ga and nitride, which are constituent components of gallium arsenide, are dissolved in the solution. By causing a so-called etching reaction and chemically dissolving the separated gallium, a smooth surface is gradually created.
ところで、前記ダイヤモンドの微細砥粒を含む鉱物油を
用いて砒化ガリウム単結晶基板を研磨する場合には、ダ
イヤモンドの微細砥粒による引っかき傷を基板表面に作
り、研磨加工後の基板表面に引っかき傷からなる損傷を
残留するという欠点があった。また、Ｂｒメタノール溶
液を用いて砒化ガリウム単結晶基板を研磨する場合には
、Ｂｒメタノールが砒化ガリウムを溶かし込む化学反応
による研磨加工であるため、基板表面の形状精度（平面
変、平行度、表面粗さなど）が悪いという欠点があった
。By the way, when polishing a gallium arsenide single crystal substrate using mineral oil containing the aforementioned fine diamond abrasive grains, scratches are created on the substrate surface by the diamond fine abrasive grains, and scratches are left on the substrate surface after polishing. The disadvantage was that it left behind some damage. In addition, when polishing a gallium arsenide single crystal substrate using a Br methanol solution, the polishing process is based on a chemical reaction in which Br methanol dissolves gallium arsenide. It had the disadvantage of poor roughness, etc.).
（＠明が解決しようとする問題点）
本発明は、上記実情にかんがみてなされたもので、その
目的とするところは、研磨加工後の基板表面に引っかき
傷等の損傷を残留することなしに、また、研磨加工後の
基板表面の形状精度が良好となる化合物半導体材料用の
研磨液を提供することにある。(Problems to be solved by @Ming) The present invention was made in view of the above-mentioned circumstances, and its purpose is to prevent damage such as scratches from remaining on the surface of the substrate after polishing. Another object of the present invention is to provide a polishing liquid for compound semiconductor materials that provides good shape accuracy on the surface of a substrate after polishing.
（問題点を解決するための手段と作用）化合物半導体材
料の研磨液において、水に少なくともさらし粉（Ｃａ
（ＣＡＯ）ｔを主成分とする。）、トリポリりん酸ナト
リウム（Ｎ”ｓ ＰＳ ０１０ ） 、硫酸ナトリウム
（Ｎａ、 ８０．）を混合してなり、損傷を生じること
なく高精度研磨が可能となるものである。(Means and effects for solving the problem) In the polishing solution for compound semiconductor materials, at least a powder (Ca
(CAO)t is the main component. ), sodium tripolyphosphate (N"s PS 010 ), and sodium sulfate (Na, 80.), and enables high-precision polishing without causing damage.
（実施例） 以下、本発明の一実施例を図面を参照して詳述する。(Example) Hereinafter, one embodiment of the present invention will be described in detail with reference to the drawings.
本発明の実施例として、トリポリりん酸ナトリウム（Ｎ
ａｓ Ｐｓ Ｏｌｏ ） 、硫酸ナトリｆｙ Ａ （Ｎ
ａ、 ８０．）、純水をそれぞれ６．４ｔ、 ７．２ｐ
、 ５００−の割合で混合した溶液の中に、次亜塩素化
カルシウム（Ｃａ （ＣｔＯ）りを主成分（含有ｉ１６
５．１ ｖｏｌ ｌｌｙ ）とする高度さらし粉の混合
量を０．４ｆ４．４ｔの範囲で変化させて、研磨液とし
、試験的に砒化ガリウムの研磨を行った０第１表に研磨
条件を示す。As an example of the present invention, sodium tripolyphosphate (N
as Ps Olo), sodium sulfate fy A (N
a.80. ), 6.4t and 7.2p of pure water, respectively.
Calcium hypochlorite (Ca (CtO)) as the main component (containing i16
Table 1 shows the polishing conditions in which gallium arsenide was polished experimentally using a polishing solution in which the mixed amount of high-level bleaching powder (5.1 vol lly) was varied within the range of 0.4f4.4t.
研磨治具（１）に切削された１００−の砒化ガリウム結
晶（２）を第１図の様に１２枚対象にはりつけ、９５ｔ
ｆ／ｃ−の圧力をかけて研磨を行った。第２図に研磨液
分の高度さらし粉の分量と研磨速度との関係を示す。第
２図より、研磨速度は研磨液中の高度さら“し粉の分量
がｔｐまでは急激に増加し、その後、はぼ一定になって
いる。この結果、本発明における研磨液組成においては
、高度さらし粉の分量を増加させることによって研磨速
度を制御できるといえる。また、研磨速度を安定化させ
るためには、１を以上の高度さらし粉が必要である。As shown in Figure 1, 12 gallium arsenide crystals (2) cut into a polishing jig (1) were attached to the target, and 95t.
Polishing was performed by applying a pressure of f/c-. FIG. 2 shows the relationship between the amount of highly bleached powder in the polishing liquid and the polishing speed. From FIG. 2, the polishing rate increases rapidly until the amount of highly exposed powder in the polishing solution reaches tp, and then becomes almost constant.As a result, in the polishing solution composition of the present invention, It can be said that the polishing rate can be controlled by increasing the amount of high-level bleaching powder.Also, in order to stabilize the polishing rate, a high-level bleaching powder of 1 or more is required.
次に、高度さらし粉、トリポリりん酸ナトリウム、硫酸
ナトリウム、−純水を４．４Ｐ、 ６．４ｆ、 ７．２
ｆ、 ５００−の割合で混合した溶液に、希Ｈ，８０，
ならびに水酸化ナトリウムを加えて溶液中のｐＨを変化
させたものを研磨液とし、砒化ガリウム結晶の研磨を行
った。Next, add highly bleached powder, sodium tripolyphosphate, sodium sulfate, and pure water to 4.4P, 6.4f, 7.2
f, diluted H, 80,
The pH of the solution was changed by adding sodium hydroxide as a polishing liquid, and gallium arsenide crystals were polished.
研磨条件は第１表に準じて行った。第３図に、前記研磨
液のｐＨ値と研磨速度との関係を示す。第３図中の注釈
は螢光打丁での目視による研磨表面の状態である。第３
図より、研磨速度に対して研磨液のｐＨ値は大きな影響
を及ぼし、ｐｉ−１値の増加に伴い研磨速度は指数関数
的に増加する。また、研磨後の砒化ガリウム結晶表面は
ｐ Ｈ＝ ｌ Ｏ，５以下ではＡ面であるが、ｐＨ＝１
１．５以上では黒色膜が形成されている。この結果、高
度さらし粉を用いた研磨液の適正ｐＨ値はＰＨ＝８〜ｔ
ｉの範囲であるといえる。第４図ないし第６図は、高度
さらし粉、トリポリりん酸ナトリウム、硫酸ナトリウム
、純水からなる本発明における研磨液を用いて砒化ガリ
ウムを研磨したときの研磨モデルである。すなわち、研
磨液成分中の高度さらし粉の主成分であルＣａ （Ｃ１
０）ｔは、純水中で解離してＣａ 、 Ｃ４０−に分解
する。そしてＣｔＯ−によって砒化ガリウム（３）表面
に反応生成物（４）としてのＧａ、 ｏ３．入Ｓ、０．
が形成される。次いで、研磨布（５）によって前記反応
生成物（４）の一部（他より凸状の部分）が、ぬぐい取
られる。すると、ぬぐい取られた部分は砒化ガリウム面
が露出するため、再度Ｇａ、 ０． 、入Ｓ、０．から
なる反応生成物（６）が形成され、次いで研磨布（５）
によってこの反応生成物（６）がぬぐい取られる。この
過程が繰り返されて行なわれることによって研磨が進行
し、平滑な鏡面状態が形成される。The polishing conditions were as shown in Table 1. FIG. 3 shows the relationship between the pH value of the polishing liquid and the polishing rate. The annotations in FIG. 3 indicate the condition of the polished surface visually observed with a fluorescent knife. Third
From the figure, the pH value of the polishing liquid has a large effect on the polishing rate, and the polishing rate increases exponentially as the pi-1 value increases. Furthermore, the surface of the gallium arsenide crystal after polishing is A-plane at pH=lO,5 or less, but when pH=1
If it is 1.5 or more, a black film is formed. As a result, the appropriate pH value of polishing liquid using high-level bleaching powder is PH = 8 ~ t
It can be said that it is within the range of i. FIGS. 4 to 6 are polishing models for polishing gallium arsenide using the polishing liquid of the present invention comprising high-grade bleaching powder, sodium tripolyphosphate, sodium sulfate, and pure water. In other words, Ca (C1
0) t dissociates in pure water and decomposes into Ca and C40-. Then, by CtO-, Ga as a reaction product (4) is formed on the surface of gallium arsenide (3), o3. Enter S, 0.
is formed. Next, a part of the reaction product (4) (a part that is more convex than the rest) is wiped off with a polishing cloth (5). Then, the gallium arsenide surface of the wiped off area is exposed, so Ga, 0. , Enter S, 0. A reaction product (6) consisting of
This reaction product (6) is wiped off. By repeating this process, polishing progresses and a smooth mirror surface is formed.
このようにして研磨が進行するため、本発明における研
磨液を用いての研磨の場合には前記ダイヤモンドの微細
砥粒を含む鉱物油を用いての研磨において問題となる基
板表面に残留する引っかき傷などの損傷を生ずることな
しに研磨が可能であり、また、前記Ｂｒメタノール溶液
を用いての研磨において問題となる基板表面の形状精度
の悪化なしに研磨が可能である。また、研磨液成分とし
てのトリポリりん酸ナトリウムは、反応生成物を生成さ
せる前記次亜塩素酸（（、ｔＯ″″）が研磨液中で分解
し、さらに純水中の水素イオンと反応して、Ｃｔ、。Because polishing proceeds in this manner, when polishing using the polishing liquid of the present invention, scratches remain on the substrate surface, which is a problem when polishing using mineral oil containing fine diamond abrasive grains. Polishing is possible without causing damage such as, and polishing is also possible without deteriorating the shape accuracy of the substrate surface, which is a problem in polishing using the Br methanol solution. In addition, in sodium tripolyphosphate as a polishing liquid component, the above-mentioned hypochlorous acid ((, tO''), which generates a reaction product, decomposes in the polishing liquid and further reacts with hydrogen ions in pure water. , Ct.
ＨＣｌが生成されて研磨速度が不安定になる過程を妨げ
る作用をし、安定した研磨作用をさせるために、必要不
可欠な成分である。また、硫酸ナトリウムについては含
まない場合、即ち、高度さらし粉、トリポリりん酸ナト
リウム、純水からなる場合においても研磨可能であるが
、硫酸ナトリウムは純水に容易にＮａ＋とＳＯニーに解
離し、他の化学反応を容易にする作用があるため、混合
させた方が良い。また、純水については、研磨液の溶液
となるため、これも必要不可欠な成分である。It acts to prevent the process in which HCl is generated and the polishing rate becomes unstable, and is an essential component for stable polishing action. In addition, polishing is possible even when it does not contain sodium sulfate, that is, when it consists of highly bleached powder, sodium tripolyphosphate, and pure water, but sodium sulfate easily dissociates into Na + and SO knee in pure water, and other It is better to mix them because they have the effect of facilitating chemical reactions. Further, pure water is also an essential component since it becomes a solution of the polishing liquid.
なお、本発明での研磨液の一成分である高度さらし粉は
、Ｃａ（ＣＡＯ）、 （次亜塩素化カルシウム）を主成
分（含有量６５．１ｖｏ１％） とする白色粉状の薬
品でのＣａ （ＣｔＯ）を濃度が７３．６ｗｔチと高度
さらし粉よりも高い、トヨクロンＰＴＧ（商品名；製造
元、東洋曹達工業株式会社） なる白色顆粒状の薬品を
用いても研磨液の一成分として満足する。さらに、以上
の実施例は化合物半導体の１種である砒化ガリウムの研
磨についてであるが、燐化ガリウム、燐化インジウムな
どの化合物半導体の研磨における研磨液として使用可能
である。In addition, the highly bleached powder, which is one component of the polishing liquid in the present invention, is a white powder chemical containing Ca (CAO), (calcium hypochlorite) as its main component (content 65.1 vol%). Even if a white granular chemical called Toyoclone PTG (trade name; manufacturer, Toyo Soda Kogyo Co., Ltd.), which has a concentration of (CtO) of 73.6 wt, which is higher than that of high-level bleaching powder, is used, it is satisfactory as a component of the polishing liquid. Furthermore, although the above embodiments are about polishing gallium arsenide, which is a type of compound semiconductor, it can be used as a polishing liquid for polishing compound semiconductors such as gallium phosphide and indium phosphide.
本発明の研磨液は、被加工物に損傷を与えることなく、
高精度の研磨加工を可能とする。ことに、砒化ガリウム
、燐化ガリウム、燐化インジウムなどの化合物半導体用
のメカニカル・ケミカルボリジング用の研磨液として格
別の効果を奏する。The polishing liquid of the present invention does not damage the workpiece.
Enables high-precision polishing. In particular, it is particularly effective as a polishing liquid for mechanical/chemical boriding of compound semiconductors such as gallium arsenide, gallium phosphide, and indium phosphide.
第１図は本発明の一実施例の研磨液による研磨の説明図
、第２図は同じく研磨液中の高度さらし粉の分量と研磨
速度との関係を示すグラフ、第３図は同じく研磨液のｐ
Ｈ値と研磨速度との関係を示すグラフ、第４図ないし第
６図は同じく研磨モデルの説明図である。
（１）：研磨治具。
（２）：砒化ガリウム結晶。
（４）、 ｔ６） ：反応生成物。
（５）：研磨布。
代理人 弁理士 則 近 憲 佑
同 竹 花 喜久男
第 １ 図
高度ごらし＃っ扮−１（？）
第２図
高度さらし衿系縛磨旋ｎＰＨイ直
ｇｓ４図
第５図FIG. 1 is an explanatory diagram of polishing using a polishing liquid according to an embodiment of the present invention, FIG. 2 is a graph showing the relationship between the amount of high-level bleaching powder in the polishing liquid and the polishing speed, and FIG. p
Graphs showing the relationship between the H value and the polishing rate, FIGS. 4 to 6, are also explanatory diagrams of the polishing model. (1): Polishing jig. (2): Gallium arsenide crystal. (4), t6): reaction product. (5): Polishing cloth. Agent Patent Attorney Nori Ken Yudo Takehana Kikuo No. 1 Figure Altitude View #pp-1 (?) Figure 2 Altitude Exposed Collar System Tied-up Rotation nPH Straight Gs4 Figure Figure 5
Claims (1)
硫酸ナトリウムとを混合してなることを特徴とする研磨
液。A polishing liquid comprising a mixture of at least bleaching powder, sodium tripolyphosphate, and sodium sulfate in water.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62009993A JPS63180466A (en) | 1987-01-21 | 1987-01-21 | Polishing liquid |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62009993A JPS63180466A (en) | 1987-01-21 | 1987-01-21 | Polishing liquid |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63180466A true JPS63180466A (en) | 1988-07-25 |
Family
ID=11735381
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62009993A Pending JPS63180466A (en) | 1987-01-21 | 1987-01-21 | Polishing liquid |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63180466A (en) |
-
1987
- 1987-01-21 JP JP62009993A patent/JPS63180466A/en active Pending
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