JPS63178924U - - Google Patents
Info
- Publication number
- JPS63178924U JPS63178924U JP7045587U JP7045587U JPS63178924U JP S63178924 U JPS63178924 U JP S63178924U JP 7045587 U JP7045587 U JP 7045587U JP 7045587 U JP7045587 U JP 7045587U JP S63178924 U JPS63178924 U JP S63178924U
- Authority
- JP
- Japan
- Prior art keywords
- conductor
- thyristor
- gate turn
- diode
- terminal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004020 conductor Substances 0.000 claims description 9
- 239000012212 insulator Substances 0.000 claims description 3
- 239000003990 capacitor Substances 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 2
Landscapes
- Power Conversion In General (AREA)
Description
第１図は本考案の実施例を示す側面図、第２図
は本考案の他の実施例を示す側面図、第３図はス
ナバ回路を示す回路図、第４図はターンオフ時の
電圧、電流を示す波形図である。
２……ゲートターンオフサイリスタ、３……ダ
イオード、２１，３１……アノード側電極、２２
，３２……カソード側電極、４，５……積層フイ
ン、６……導体、７……絶縁体、８……コンデン
サ。
Fig. 1 is a side view showing an embodiment of the present invention, Fig. 2 is a side view showing another embodiment of the invention, Fig. 3 is a circuit diagram showing a snubber circuit, Fig. 4 is a voltage at turn-off, FIG. 3 is a waveform diagram showing current. 2... Gate turn-off thyristor, 3... Diode, 2 1 , 3 1 ... Anode side electrode, 2 2
, 3 2 ... cathode side electrode, 4, 5... laminated fin, 6... conductor, 7... insulator, 8... capacitor.
Claims (1)
の平形ダイオードとを同一方向に電流が流れる向
きで互いに接近させて並行に配置し、前記ゲート
ターンオフサイリスタ及びダイオードの各アノー
ド側電極に一面側が圧接するよう共通の導電性の
放熱フインを設けると共に、互いの間に絶縁体が
介在された板状の第１の導体及び板状の第２の導
体を、第１の導体が絶縁体及び第２の導体の他端
部を介して前記ダイオードのカソード側電極に圧
接されるように設け、前記第１の導体の一端部及
び第２の導体の一端部を夫々スナバ回路のコンデ
ンサの一方の端子及び他方の端子に接続し、前記
第１の導体の他端部を前記ゲートターンオフサイ
リスタのカソード側電極に圧接したことを特徴と
するゲートターンオフサイリスタの保護装置。 A flat gate turn-off thyristor and a flat diode of the snubber circuit are arranged in parallel and close to each other with current flowing in the same direction, and have a common conductivity so that one side is pressure-contacted with the anode side electrode of each of the gate turn-off thyristor and the diode. A plate-shaped first conductor and a plate-shaped second conductor are provided with an insulator interposed between them, and the first conductor is connected to the insulator and the other end of the second conductor. is provided so as to be in pressure contact with the cathode side electrode of the diode through the conductor, and one end of the first conductor and one end of the second conductor are connected to one terminal and the other terminal of a capacitor of the snubber circuit, respectively. . A protection device for a gate turn-off thyristor, wherein the other end of the first conductor is pressed against a cathode electrode of the gate turn-off thyristor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7045587U JPS63178924U (en) | 1987-05-12 | 1987-05-12 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7045587U JPS63178924U (en) | 1987-05-12 | 1987-05-12 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63178924U true JPS63178924U (en) | 1988-11-18 |
Family
ID=30912106
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7045587U Pending JPS63178924U (en) | 1987-05-12 | 1987-05-12 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63178924U (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6126325B2 (en) * | 1982-04-02 | 1986-06-20 | Kao Kk |
-
1987
- 1987-05-12 JP JP7045587U patent/JPS63178924U/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6126325B2 (en) * | 1982-04-02 | 1986-06-20 | Kao Kk |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5984849U (en) | Semiconductor and heat sink assemblies | |
| JPS63178924U (en) | ||
| JPS5875490U (en) | GTO protection circuit | |
| JPS6232555U (en) | ||
| JPS6126325U (en) | snubber circuit | |
| JPS6197855U (en) | ||
| JPS6442627U (en) | ||
| JPS6247148U (en) | ||
| JPS5950447U (en) | Stack of semiconductor conversion equipment | |
| JPS62104592U (en) | ||
| JPS6082842U (en) | Gate drive circuit for self-extinguishing thyristor | |
| JPS593558U (en) | GTO element protection device | |
| JPH0371660U (en) | ||
| JPH01118461U (en) | ||
| JPH0367421U (en) | ||
| JPH0173951U (en) | ||
| JPS5868040U (en) | Assembly structure of thyristor and its snubber circuit | |
| JPH03112951U (en) | ||
| JPS61119363U (en) | ||
| JPS61183550U (en) | ||
| JPS636753U (en) | ||
| JPS63102328U (en) | ||
| JPS6284922U (en) | ||
| JPS6130258U (en) | Pressure contact type semiconductor device | |
| JPS6153941U (en) |