JPS63178576A - Semiconductor laser of buried structure - Google Patents
Semiconductor laser of buried structureInfo
- Publication number
- JPS63178576A JPS63178576A JP1081287A JP1081287A JPS63178576A JP S63178576 A JPS63178576 A JP S63178576A JP 1081287 A JP1081287 A JP 1081287A JP 1081287 A JP1081287 A JP 1081287A JP S63178576 A JPS63178576 A JP S63178576A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- doped
- semiconductor laser
- active region
- inp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 44
- 230000000903 blocking effect Effects 0.000 claims description 11
- 239000010936 titanium Substances 0.000 claims description 11
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 abstract description 8
- 239000012535 impurity Substances 0.000 abstract description 8
- 239000000758 substrate Substances 0.000 abstract description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- 238000005253 cladding Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 229910004356 Ti Raw Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、高速変調動作に適する埋込み構造半導体レー
ザに関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a buried structure semiconductor laser suitable for high-speed modulation operation.
（従来の技術）
半導体レーザは光フアイバ通信の光源として実用化が始
まっている。この用途に用いられる半導体レーザは、高
速変ＰＩが可能でかつ高い効率で発振することが望まし
い。特に、光ファイバの低損失化の進展にともない、１
００廟を越える無中継伝送が可能となりつつあるので、
このような要請はより強くなっている。(Prior Art) Semiconductor lasers have begun to be put into practical use as light sources for optical fiber communications. It is desirable that the semiconductor laser used for this purpose be able to change the PI at high speed and oscillate with high efficiency. In particular, with the progress in reducing the loss of optical fibers, 1
Since it is becoming possible to transmit without relays over 00 temples,
These demands are becoming stronger.
従来の半導体レーザの構造を第３図に示した（アプライ
ド・フィシ・ンクス・レターズ（八ｐｐｌ。The structure of a conventional semiconductor laser is shown in Figure 3 (Applied Physics Letters (8ppl.
Ｐｈｙｓ、 Ｌｅｔｔ、 ） ４８巻、 １９８６
年、 １５７２〜１５７３頁）。Phys, Lett, ) Volume 48, 1986
, pp. 1572-1573).
この素子では、半導体基板３５の上にｎバッファ層３３
、活性領域３１．ｐクラッド層３２．ｐキャップ層３８
が順次積層されており、活性領域３１の両側には、Ｆｅ
がドープされた斉抵抗Ｍ３４が配置されている。In this device, an n-buffer layer 33 is formed on a semiconductor substrate 35.
, active region 31. p cladding layer 32. p cap layer 38
are sequentially stacked, and on both sides of the active region 31, Fe
A resistor M34 doped with is arranged.
この半導体レーザのｐ側電極３６とｎ側電極３７に通電
すると、高抵抗層３４の抵抗率が非常に高いから電流は
活性領域３１に集中して流れる。この構造では、ｐｎ接
合は、活性領域３１を上下からはさんだ幅約１μｍの領
域にしか形成されない。そこで、この半導体レーザの静
電容量は約１ｐＦと非常に小さくなり、ｐｎ逆接合を電
流ブロック屑に用いた半導体レーザの静電容量に比べる
と約１７１ｏに低減できる。従って、時定数は非常に短
くなりＩ ＧＨ２以上の高速変調が可能となる。この半
導体レーザでは２ＧＨｚ程度の高速変調動作が得られた
。When current is applied to the p-side electrode 36 and n-side electrode 37 of this semiconductor laser, the current flows concentratedly in the active region 31 because the resistivity of the high-resistance layer 34 is very high. In this structure, the pn junction is formed only in a region with a width of about 1 μm between the active region 31 from above and below. Therefore, the capacitance of this semiconductor laser is very small, about 1 pF, and can be reduced to about 171° compared to the capacitance of a semiconductor laser using a pn inverse junction as the current block waste. Therefore, the time constant becomes extremely short and high-speed modulation of IGH2 or higher is possible. With this semiconductor laser, high-speed modulation operation of about 2 GHz was obtained.
（発明が解決しようとする問題点）
従来の高抵抗層を用いた第３図の半導体レーザでは、室
温（３０℃）における外部微分量子効率ηｄは片面で０
．２ｎＷ／ｎＡであり、最高光出力し１は１０〜２０１
冒程度であった。ｐｎｎ逆接合電流ブロック層とする半
導体レーザのηｄおよびＬＬｌがそれぞれ０．３１＋Ｗ
／ｌ＾、 ７０ｒａＷであるから、第３図の構造のηｄ
およびり、は小さな値であった。このように、従来の半
導体レーザでは、高い量子効率。(Problems to be Solved by the Invention) In the semiconductor laser shown in FIG. 3 using a conventional high-resistance layer, the external differential quantum efficiency ηd at room temperature (30°C) is 0 on one side.
．． 2nW/nA, maximum light output, 1 is 10-201
It was a blasphemy. ηd and LLl of the semiconductor laser used as the pnn reverse junction current blocking layer are each 0.31+W.
/l^, 70raW, so ηd of the structure shown in Figure 3
and were small values. Thus, conventional semiconductor lasers have high quantum efficiency.
光出力が得られない問題があった。There was a problem that optical output could not be obtained.
本発明の目的は、高効率、高出力が得られ、かつ高速変
調動作が可能な埋込み構造半導体レーザを提供すること
にある。An object of the present invention is to provide a buried structure semiconductor laser that can obtain high efficiency and high output, and can perform high-speed modulation operation.
（問題点を解決するための手段）
本発明が提供する手段は、活性領域を該活性領域の屈折
率より低い屈折率を有しかつ該活性領域の禁制帯幅より
大きい禁制帯幅を有する半導体で囲んだ埋込み構造半導
体レーザであって、前記活性領域の上側および下側の層
のうち一方がｎ型で他方がＰ型であり、前記活性領域を
該活性領域の長手軸の左右両側から埋込む領域はチタニ
ウムがドーピングされた高抵抗電流ブロック層で形成さ
れていることを特徴とする。(Means for Solving the Problems) The means provided by the present invention provides an active region in a semiconductor having a refractive index lower than the refractive index of the active region and a forbidden band width larger than the forbidden band width of the active region. A buried structure semiconductor laser surrounded by , wherein one of the upper and lower layers of the active region is n-type and the other is p-type, and the active region is buried from both left and right sides of the longitudinal axis of the active region. The doped region is characterized by being formed of a high resistance current blocking layer doped with titanium.
（作用）
Ｔｉがドーピングされた■−Ｖ族化合物半導体は、鉄（
Ｆｅ）がドーピングされたときと同様に半導体の伝導帯
下の深い位置（例えばＩｎＰに対しては０．６３ｅＶ
）に不純物単位が形成される。この不純物単位が半導体
のキャリアを捕獲して、キャリア濃度が激減し、半導体
が高抵抗化する。(Function) The ■-V group compound semiconductor doped with Ti is iron (
Similar to when Fe) is doped, the concentration is deep below the conduction band of the semiconductor (for example, 0.63 eV for InP).
) an impurity unit is formed. These impurity units capture carriers in the semiconductor, drastically reducing the carrier concentration and increasing the resistance of the semiconductor.
半導体の深い不純物単位は、キャリアの非発光再結合中
心として働く、従って、拡散係数の大きな不純物を用い
ると埋め込み成長中にその不純物が活性領域中に入り込
み半導体レーザの発光効率を減少させることになる。よ
って、高効率高出力動作する半導体レーザを得るには、
拡散係数の小さな不純物を埋め込み層に用いる必要があ
る。Deep impurity units in a semiconductor act as non-radiative recombination centers for carriers. Therefore, if an impurity with a large diffusion coefficient is used, the impurity will enter the active region during buried growth and reduce the luminous efficiency of the semiconductor laser. . Therefore, in order to obtain a semiconductor laser that operates with high efficiency and high power,
It is necessary to use an impurity with a small diffusion coefficient in the buried layer.
Ｆｅは拡散し易いことが知られている０例えば、ＩｎＰ
系のＦｅドープ成長では成長中にＦｅが他の成長層へ拡
散し、その拡散距離が数回に達することが知られている
（エレクトロニクス・レターズ（Ｅｌｅｃｔｒｏｎ、
Ｌｅｔｔ、 ） １４巻、 １９７８年、７１５〜
７１６頁）、それに対し、ＴｉドープＩｎＰについて本
ｗＢ発明者が行った実験ではＴｉの拡散は極く小さいも
のであった。従って、本発明の半導体レーザでは、Ｔｉ
がドーピングされた半導体の埋め込み成長中に活性領域
へのＴｉの拡散は極めて少ない。その結果高効率、高出
力の発振が得られる。Fe is known to be easily diffused. For example, InP
It is known that in Fe-doped growth of systems, Fe diffuses to other growth layers during growth, and the diffusion distance reaches several times (Electronics Letters,
Lett, ) 14 volumes, 1978, 715-
(p. 716), on the other hand, in experiments conducted by the inventor of this wB on Ti-doped InP, the diffusion of Ti was extremely small. Therefore, in the semiconductor laser of the present invention, Ti
Diffusion of Ti into the active region during buried growth of a semiconductor doped with Ti is extremely low. As a result, high efficiency and high output oscillation can be obtained.
（実施例） 以下本発明について図面を参照して詳細に説明する。(Example) The present invention will be described in detail below with reference to the drawings.
第１図は本発明の第１の実施例の半導体レーザを示す断
面図である。活性領域１１はノンドープＩ ｎＧａＡｓ
Ｐ （エネルギーギャップＥｇ＝０．９５ｅＶ） 、ｐ
クラッド層１２は亜鉛（Ｚｎ）を１×１０１８０リドー
ブしたＩｎＰ、ｐキャブ１層１８は亜鉛を８Ｘ １０１
０１８ａ’ドープしなＩｎＧａＡｓＰ（Ｅ ｇ ＝ １
．１３ｅＶ）眉、ｎバッファＭ１３は硫黄（Ｓ＞をｌ
Ｘ １０１１０１８ａドープしたＩｎＰ層、高抵抗電流
ブロック層１４はチタニウム（Ｔｉ）をＩ Ｘ １０１
６ｃｍ＋−３ドープしたＩｎＰ層から構成されている。FIG. 1 is a sectional view showing a semiconductor laser according to a first embodiment of the present invention. The active region 11 is made of non-doped InGaAs.
P (energy gap Eg=0.95eV), p
The cladding layer 12 is InP with 1×10180 redoped zinc (Zn), and the p-cab 1 layer 18 is made of 8×101 zinc.
018a'-doped InGaAsP (E g = 1
．． 13eV), n buffer M13 is sulfur (S>l)
X 1011018a doped InP layer, high resistance current blocking layer 14 is titanium (Ti) I
It consists of a 6 cm+-3 doped InP layer.
そして半導体基板１５にはＳドープＩｎＰ基板が用いら
れている。As the semiconductor substrate 15, an S-doped InP substrate is used.
この半導５体レーザは以下に述べる方法で製作された。This semiconductor five-body laser was manufactured by the method described below.
初めに、通常の方法で得られたダブルへテロ（ＤＨ＞結
晶を第１図に示されるようにストライブ状にケミカルエ
ツチングで活性領域を横幅約１ミクロンのメサ状にする
。その後、ハイドライド気相成長法によって、Ｔｉドー
プＩｎＰからなる高抵抗電流ブロック層１４を形成した
。ハイドライド気相成長法によってＴ１ドープＩｎＰ屑
を形成する場合、Ｉｎ原料としてＩｎメタルとＨＣＩガ
スを高温で反応させて得られるＩｎＣ！Ｊガスを用い、
Ｐ原料としてＰＨ３ガスを用い、Ｔｉ原料としてＴ ｉ
Ｃ４２４を用いた。First, a double hetero (DH> crystal) obtained by a conventional method is chemically etched into stripes as shown in Fig. 1 to form the active region into a mesa shape with a width of about 1 micron. A high-resistance current blocking layer 14 made of Ti-doped InP was formed by a phase growth method.When forming T1-doped InP scraps by a hydride vapor phase growth method, a high-resistance current blocking layer 14 made of Ti-doped InP was formed by reacting In metal and HCI gas as an In raw material at high temperature. Using InC!J gas,
PH3 gas is used as the P raw material, and Ti is used as the Ti raw material.
C424 was used.
この半導体レーザの室温における閾電流は１８ｒＤＡと
低く、かつ外部微分量子効率ηｄは０．２７１１Ｗ／
ｎＡ。The threshold current of this semiconductor laser at room temperature is as low as 18 rDA, and the external differential quantum efficiency ηd is 0.2711 W/
nA.
最高光出力し１１は５５ｎＷであり、高効率、高出力が
得られた。また、変調特性では６ ＧＨｚ以上の高速変
調動作が得られた。The highest optical output was 55 nW for No. 11, and high efficiency and high output were obtained. Furthermore, in terms of modulation characteristics, high-speed modulation operation of 6 GHz or higher was obtained.
第２図は本発明の第２の実施例の半導体レーザを示す断
面図である。第１図に示した第１の実施例と異なる点は
、活性領域２１の横幅を１１ＪＩｉ程度に制御するため
にＩｎＧａＡｓＰを選択エツチングさせてくびれさせた
点である。このようなくびれ部２９を有するメサに第１
の実施例と同じ方法でＴｉドープＩｎＰＭ１をハイドラ
イド気相成長法で埋め込むと、くびれ部２９に高抵抗電
流ブロック層２４が形成される。この実施例では、第１
の実施例に比べて、溝形状によらず活性層幅を任意の幅
に制御することが可能である。FIG. 2 is a sectional view showing a semiconductor laser according to a second embodiment of the present invention. The difference from the first embodiment shown in FIG. 1 is that InGaAsP is selectively etched to form a constriction in order to control the width of the active region 21 to about 11JIi. A first mesa with such a constriction 29
When Ti-doped InPM 1 is buried by hydride vapor phase epitaxy in the same manner as in the embodiment, a high-resistance current blocking layer 24 is formed in the constricted portion 29. In this example, the first
Compared to the embodiment described above, it is possible to control the active layer width to an arbitrary width regardless of the groove shape.
この半導体レーザは第１の実施例と同様に高速動作が得
られた。室温におけるηｄは０．２７ｎＷ／ｌ＾。This semiconductor laser achieved high-speed operation similarly to the first example. ηd at room temperature is 0.27 nW/l^.
Ｌｌは６０１Ｗであり、やはり高効率、高出力が得られ
な。Ll is 601W, so high efficiency and high output cannot be obtained.
上記第１．第２の実施例では、活性領域に波長１．３ミ
クロンで発振する組成のＩｎＧａＡｓＰを用いたが、こ
の組成に限定されないのは明らかである。Above 1. In the second embodiment, InGaAsP having a composition that oscillates at a wavelength of 1.3 microns is used in the active region, but it is clear that the composition is not limited to this.
上記第１．第２の実施例では、高抵抗電流ブロック層に
ＩｎＰが用いられたが、ＩｎＧａＡｓＰでも良い。Above 1. In the second embodiment, InP was used for the high resistance current blocking layer, but InGaAsP may also be used.
上記第１．第２の実施例では、ＩｎＧａＡｓＰ／ Ｉ
ｎ Ｐ半導体材料が用いられたが、ＧａＡρＡｓ／Ｇａ
Ａｓ、Ｉ ｎＧａＡｕＡｓ／Ｉ ｎＰ等の他の■−ｖ族
半導体材料からなる半導体レーザにも本発明は同様に適
用可能である。Above 1. In the second example, InGaAsP/I
Although nP semiconductor materials were used, GaAρAs/Ga
The present invention is similarly applicable to semiconductor lasers made of other ■-v group semiconductor materials such as As and InGaAuAs/InP.
上記第１．第２の実施例では、活性領域の下側をｎ型、
上側をｐ型としたが、本発明では下側をｐ型、上側をｎ
型としても良い。Above 1. In the second embodiment, the lower side of the active region is of n-type,
Although the upper side is p-type, in the present invention, the lower side is p-type and the upper side is n-type.
It can also be used as a mold.
（発明の効果）
本発明による半導体レーザは、高抵抗電流ブロック層に
ドープされた不純物が拡散定数の小さいＴｉであるから
活性領域の発光効率が低下せず、この半導体レーザは高
効率、高出力で発振する。(Effects of the Invention) In the semiconductor laser according to the present invention, since the impurity doped in the high resistance current blocking layer is Ti, which has a small diffusion constant, the luminous efficiency of the active region does not decrease, and this semiconductor laser has high efficiency and high output. oscillates.
さらに、電流ブロック層が高抵抗であるから、静電容量
が非常に小さく高速の変調が可能である。Furthermore, since the current blocking layer has a high resistance, the capacitance is very small and high-speed modulation is possible.
第１図は本発明の第１の実施例の半導体レーザを示す断
面図であり、第２図は本発明の第２の実施例の半導体レ
ーザを示す断面図であり、第３図は従来の半導体レーザ
を示す断面図である。
１１、２１．３１・・・活性領域、１２．２２．３２・
・・ｐクラッド層、１３．２３．３３・・・ｎバッファ
層、１４．２４・・・高抵抗電流ブロック層、１５．２
５．３５・・・半導体基板、１６゜２６、３６−ｐ ０
１ｌＩ電極、１７．２７．３７−ｎ側電極、１８゜２８
、３８・・・ｐキヤツプ層、２９・・・くびれ部、３４
・・・Ｆｅがドープされた高抵抗層。FIG. 1 is a sectional view showing a semiconductor laser according to a first embodiment of the present invention, FIG. 2 is a sectional view showing a semiconductor laser according to a second embodiment of the present invention, and FIG. FIG. 2 is a cross-sectional view showing a semiconductor laser. 11, 21.31...active region, 12.22.32.
...p cladding layer, 13.23.33...n buffer layer, 14.24...high resistance current blocking layer, 15.2
5.35...Semiconductor substrate, 16°26, 36-p 0
1lI electrode, 17.27.37-n side electrode, 18°28
, 38...p cap layer, 29... constriction, 34
...High resistance layer doped with Fe.
Claims (1)
つ該活性領域の禁制帯幅より大きい禁制帯幅を有する半
導体で囲んだ埋込み構造半導体レーザにおいて、前記活
性領域の上側および下側の層のうち一方がｎ型で他方が
ｐ型であり、前記活性領域を該活性領域の長手軸の左右
両側から埋込む領域はチタニウムがドーピングされた高
抵抗電流ブロック層で形成されていることを特徴とする
埋込み構造半導体レーザ。In a buried structure semiconductor laser in which an active region is surrounded by a semiconductor having a refractive index lower than the refractive index of the active region and a forbidden band width larger than the forbidden band width of the active region, One of the layers is n-type and the other is p-type, and the regions that bury the active region from both left and right sides of the longitudinal axis of the active region are formed of a high resistance current blocking layer doped with titanium. Features a buried structure semiconductor laser.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62010812A JP2522281B2 (en) | 1987-01-20 | 1987-01-20 | Embedded structure semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62010812A JP2522281B2 (en) | 1987-01-20 | 1987-01-20 | Embedded structure semiconductor laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63178576A true JPS63178576A (en) | 1988-07-22 |
| JP2522281B2 JP2522281B2 (en) | 1996-08-07 |
Family
ID=11760757
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62010812A Expired - Fee Related JP2522281B2 (en) | 1987-01-20 | 1987-01-20 | Embedded structure semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2522281B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6167072A (en) * | 1997-06-06 | 2000-12-26 | University Of Florida | Modulated cap thin p-clad semiconductor laser |
-
1987
- 1987-01-20 JP JP62010812A patent/JP2522281B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6167072A (en) * | 1997-06-06 | 2000-12-26 | University Of Florida | Modulated cap thin p-clad semiconductor laser |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2522281B2 (en) | 1996-08-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |