JPS63177428A - Sealing method for semiconductor device with resin - Google Patents

Sealing method for semiconductor device with resin

Info

Publication number
JPS63177428A
JPS63177428A JP840387A JP840387A JPS63177428A JP S63177428 A JPS63177428 A JP S63177428A JP 840387 A JP840387 A JP 840387A JP 840387 A JP840387 A JP 840387A JP S63177428 A JPS63177428 A JP S63177428A
Authority
JP
Japan
Prior art keywords
resin
sealing
frame
melting point
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP840387A
Other languages
Japanese (ja)
Inventor
Seiichi Mimura
誠一 三村
Tatsuo Mizuno
達夫 水野
Toshio Yonemura
米村 俊雄
Fumihiro Honda
本田 文博
Yoshiaki Yamada
義明 山田
Hitoshi Inada
稲田 斉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP840387A priority Critical patent/JPS63177428A/en
Publication of JPS63177428A publication Critical patent/JPS63177428A/en
Pending legal-status Critical Current

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  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

PURPOSE:To obtain the stability of coating area and coating shape and to improve the productivity by surrounding the outer periphery of a predetermined range including a semiconductor chip secured to a substrate with a high meltingpoint resin frame, attaching a low melting-point resin plate to the top, heating the resin to melt it, thereby preventing the resin from extending after the sealing resin is coated. CONSTITUTION:A semiconductor chip 2 is bonded to a predetermined position on a semiconductor device substrate 1, and a predetermined range including the chip 2 is sealed with resin. In such a resin sealing method, the outer periphery of the predetermined range including the chip 2 is surrounded by a resin frame 5 made of high melting point resin, a low melting-point resin plate 6 formed in a plate state is attached to the top of the frame 5, they are simultaneously heated to be melted to seal the chip 2. The heating temperature of the resin is set, for example, to a point higher than the melting point of the plate 6 and lower than the melting point of the frame 5. Thus, the sealing resin does not flow over the predetermined coating range to obtain a stable sealing shape.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、半導体装置の製造工程において、半導体基
板上にダイボンド、ワイヤボンドされた1個又は複数個
の半導体チップ表面と、その周辺の所定部位を樹脂を用
いて封止する際の樹脂封止方法に関するものである。
[Detailed Description of the Invention] [Industrial Application Field] This invention relates to the surface of one or more semiconductor chips die-bonded or wire-bonded on a semiconductor substrate and a predetermined area around the semiconductor chip in the manufacturing process of a semiconductor device. The present invention relates to a resin sealing method when sealing a portion using resin.

〔従来の技術〕[Conventional technology]

従来のこの種の樹脂封止方法を第4図について説明する
。第4図において、1はガラスエポキシ材等を主とする
半導体装置基板、2はこの半導体装置基板1の所定部位
(1個又は複数個)にグイボンドされた半導体チップ、
3はこの半導体チップ2の表面電極と半導体装置基板1
に設けられたリードパターン間を電気的に接続する為の
金又はアルミニウム細線でなるワイヤ、4は半導体チッ
プ2及びワイヤ3を保護封止する為の封止用樹脂である
A conventional resin sealing method of this type will be explained with reference to FIG. In FIG. 4, 1 is a semiconductor device substrate mainly made of glass epoxy material, etc.; 2 is a semiconductor chip bonded to a predetermined portion (one or more) of the semiconductor device substrate 1;
3 is the surface electrode of this semiconductor chip 2 and the semiconductor device substrate 1
Wires made of thin gold or aluminum wires are used to electrically connect the lead patterns provided on the semiconductor chip 2 and the wires 3, and a sealing resin 4 is used to protect and seal the semiconductor chip 2 and the wires 3.

次に動作について説明する。まず半導体基板1上の所定
部位に設けられたベースに半導体チップ2をAu−5i
、Pb−5n半田等をロウ材に用いて固着し、次に半導
体チップ2の表面K iと半導体装置基板1に設けられ
たリードパターン間をワイヤ3を用いてワイヤボンドを
施し、電気的接続を行う。
Next, the operation will be explained. First, the semiconductor chip 2 is mounted on a base provided at a predetermined location on the semiconductor substrate 1.
, Pb-5n solder or the like is used as a brazing material, and then wire bonding is performed using a wire 3 between the surface K i of the semiconductor chip 2 and the lead pattern provided on the semiconductor device substrate 1 to establish an electrical connection. I do.

次に樹fIFj4を半導体チップ2の上部から樹脂封止
範囲内に別途ディスペンサ(図示しない)により所定量
塗布する。この封止用樹脂4は、通常、常温では粘性を
有する液体であり、所定形状に塗布しり後、キュア炉を
通って加熱されることにより硬化される。
Next, a predetermined amount of the resin fIFj4 is applied from the top of the semiconductor chip 2 within the resin sealing range using a separate dispenser (not shown). This sealing resin 4 is normally a viscous liquid at room temperature, and after being applied to a predetermined shape, it is cured by being heated through a curing furnace.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

ところが以上述べた方法によって実装を行うと、次の様
な問題点がある。即ちディスペンサにより樹脂の滴下を
行ったとき、滴下したa脂4の塗布範囲が時間と共に広
がり、その広がる範囲は、樹脂の粘度、量、比重、表面
張力等の関係から、一般的には時間の関数で求まるが、
実際には樹脂成分の均一化は難しく、製造ロットにより
、ばらつきを生じさせる。またディスペンス量を常に均
一化することも難しい。
However, when implemented using the method described above, the following problems arise. That is, when resin is dripped with a dispenser, the applied area of the dropped a-liquid 4 expands over time, and the expanding area generally changes over time due to the relationship between the viscosity, amount, specific gravity, surface tension, etc. of the resin. It can be found by a function, but
In reality, it is difficult to make the resin components uniform, and variations occur depending on the manufacturing lot. It is also difficult to always make the dispense amount uniform.

ここで最も大きな問題となっているのは、封止用樹脂は
、キュア炉で高温加熱することにより硬化することであ
る。これは装置がトラブル等によって停止した場合、そ
のまま放置しておくと、塗布作業からキュア炉へ投入す
るまでの間は常に滴下した樹脂は広がり、第5図に示す
様に必要以上の範囲まで樹脂が広がって所定の塗布形状
に対し、塗布後・の面積や高さにばらつきを生じさせ塗
布範囲の規格を超えるものがあり、生産性が悪く、品質
の安定が保たれないという問題があった。
The biggest problem here is that the sealing resin is cured by heating at high temperatures in a curing furnace. This is because if the equipment is stopped due to some trouble, if left as it is, the dripped resin will always spread out from the coating process until it is put into the curing furnace, and as shown in Figure 5, the resin will spread beyond the necessary range. The coating spreads out, causing variations in the area and height after coating for a given coating shape, and in some cases exceeds the specifications for the coating area, resulting in poor productivity and problems with consistent quality. .

この発明は上記の様な問題点を解決するためになされた
もので、封止用樹脂の塗布後に、樹脂が広がるのを防ぎ
、塗布面積、塗布形状の安定性を得るとともに、生産性
の向上が図り得る封止方法を得ることを目的とする。
This invention was made to solve the above-mentioned problems, and it prevents the resin from spreading after applying the sealing resin, stabilizes the applied area and shape, and improves productivity. The purpose is to obtain a sealing method that can achieve this.

〔問題点を解決するための手段〕[Means for solving problems]

この発明に係る半導体装置の樹脂封止方法は、半導体装
置基板に固着された半導体チップを含む所定範囲の外周
部を高融点の樹脂で作られた所定の高さをもつ枠により
囲み、このm脂枠の上部に板状に形成された低融点の樹
脂を取付け、これらの融点の異なる2種類の樹脂に熱を
加えて溶融させ、半導体チップを含む所定の範囲を封止
するようにしたものである。
A method for resin-sealing a semiconductor device according to the present invention includes surrounding the outer periphery of a predetermined area including a semiconductor chip fixed to a semiconductor device substrate with a frame having a predetermined height made of a high melting point resin. A plate-shaped low melting point resin is attached to the top of the resin frame, and these two types of resin with different melting points are heated and melted to seal a predetermined area including the semiconductor chip. It is.

〔作用〕[Effect]

この発明に係る封止方法を用いることにょゆ、封止用樹
脂が所定範囲を超えて流れ広がるのを防止することがで
きる。
By using the sealing method according to the present invention, it is possible to prevent the sealing resin from flowing and spreading beyond a predetermined range.

〔実施例〕〔Example〕

第1図〜第3図はこの発明の一実施例を示すもので、第
1図と第2図は加熱して樹脂を溶融させる前の状態を示
す斜視図と断面図、第3図は加熱して封止された半導体
装置基板の断面図である。
Figures 1 to 3 show an embodiment of the present invention. Figures 1 and 2 are a perspective view and a sectional view showing the state before heating and melting the resin, and Figure 3 is a heating FIG. 2 is a cross-sectional view of a semiconductor device substrate sealed in a manner similar to that shown in FIG.

図において、5は枠形状をした高融点の樹脂、6はその
上に載置される板状に形成された低融点の樹脂である。
In the figure, 5 is a frame-shaped high melting point resin, and 6 is a plate-shaped low melting point resin placed thereon.

以上の様に、半導体チップ2を含む所定の樹脂封止範囲
の外周部を高融点の樹脂でなる枠5を固着して囲み、こ
のW脂の枠5の上部に板状に形成された低融点の樹脂6
を取付け、これらを同時にキュア炉を通して加熱すると
、成る一定温度で低融点の樹脂6が先に溶融し、これが
低粘度の液体になっても、高融点の樹脂の枠で形成され
た凸部で、その広がりは阻止され、所定の塗布範囲を超
えて流れ出すことはなく、安定した封止形状が得られる
As described above, the outer periphery of a predetermined resin-sealed area containing the semiconductor chip 2 is fixedly surrounded by a frame 5 made of a high melting point resin, and a plate-shaped plate is placed on the upper part of this W resin frame 5. melting point resin 6
When the resin 6 is attached and heated simultaneously through a curing furnace, the low melting point resin 6 melts first at a constant temperature, and even if it becomes a low viscosity liquid, the convex part formed by the high melting point resin frame melts first. , its spread is prevented and it does not flow out beyond the predetermined application range, resulting in a stable sealed shape.

〔発明の効果〕〔Effect of the invention〕

以上のようにこの発明によれば、融点の異なる2種類の
枠状樹脂とこれに載置される板状樹脂を用いて加熱溶融
させるようにしたもので、封止樹脂が所定の塗布範囲を
超えて流れ出すことがなく、安定した封止形状が得られ
、またキュア炉による樹脂硬化作業に行く間に広がり過
ぎた樹脂を取り除く作業も不要となり、生産性並びに品
質の向上ニ大いに寄与するという効果がある。
As described above, according to the present invention, two types of frame-shaped resins having different melting points and a plate-shaped resin placed on the frame-shaped resin are heated and melted, and the sealing resin covers a predetermined application area. A stable sealing shape is obtained without overflowing, and there is no need to remove resin that has spread too much during the resin curing process in a curing oven, which greatly contributes to improving productivity and quality. There is.

【図面の簡単な説明】 第1図はこの発明の一実施例を示す斜視図で、加熱して
樹脂を溶融させる前の状態を示し、第2図は第1図の断
面図であり、第3図は封止された半導体装置基板の断面
図である。第4図は従来の樹脂封止方法を示す斜視図、
第5図は従来のIa脂封止方法によって発生した不良例
を説明するための斜視図である。 図中、1は半導体装置基板、2は半導体チップ、3はワ
イヤ、5は高融点の樹脂枠、6は低融点のIl!月旨板
である。 尚、図中同一符号は同−又は相当部分を示す。
[BRIEF DESCRIPTION OF THE DRAWINGS] FIG. 1 is a perspective view showing an embodiment of the present invention, showing the state before heating and melting the resin, and FIG. 2 is a cross-sectional view of FIG. FIG. 3 is a cross-sectional view of the sealed semiconductor device substrate. FIG. 4 is a perspective view showing a conventional resin sealing method;
FIG. 5 is a perspective view for explaining an example of a failure caused by the conventional Ia resin sealing method. In the figure, 1 is a semiconductor device substrate, 2 is a semiconductor chip, 3 is a wire, 5 is a high melting point resin frame, and 6 is a low melting point Il! This is a monthly board. Note that the same reference numerals in the figures indicate the same or corresponding parts.

Claims (3)

【特許請求の範囲】[Claims] (1)半導体装置基板上の所定部位に半導体チップを接
着し、この半導体チップを含む所定の周囲を樹脂で封止
する樹脂封止方法において、上記半導体チップを含む所
定範囲の外周部を、高融点の樹脂で作られた樹脂枠で囲
み、さらにこの樹脂枠の上部に、板状に形成された低融
点の樹脂板を取付け、これらを同時に加熱して溶融させ
ることにより、上記半導体チップを封止することを特徴
とする半導体装置の樹脂封止方法。
(1) In a resin sealing method in which a semiconductor chip is bonded to a predetermined location on a semiconductor device substrate and a predetermined area including the semiconductor chip is sealed with resin, a predetermined area of the outer periphery including the semiconductor chip is The semiconductor chip is sealed by surrounding it with a resin frame made of melting point resin, and then attaching a plate-shaped low melting point resin plate to the top of the resin frame, and simultaneously heating and melting them. 1. A method for resin-sealing a semiconductor device.
(2)樹脂の加熱温度を、樹脂板の融点より高く、樹脂
枠の融点より低く設定したことを特徴とする特許請求の
範囲第1項記載の半導体装置の樹脂封止方法。
(2) A method for resin-sealing a semiconductor device according to claim 1, wherein the heating temperature of the resin is set higher than the melting point of the resin plate and lower than the melting point of the resin frame.
(3)樹脂枠は四角形に形成されている特許請求の範囲
第1項または第2項記載の半導体装置の樹脂封止方法。
(3) A resin sealing method for a semiconductor device according to claim 1 or 2, wherein the resin frame is formed in a rectangular shape.
JP840387A 1987-01-16 1987-01-16 Sealing method for semiconductor device with resin Pending JPS63177428A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP840387A JPS63177428A (en) 1987-01-16 1987-01-16 Sealing method for semiconductor device with resin

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP840387A JPS63177428A (en) 1987-01-16 1987-01-16 Sealing method for semiconductor device with resin

Publications (1)

Publication Number Publication Date
JPS63177428A true JPS63177428A (en) 1988-07-21

Family

ID=11692206

Family Applications (1)

Application Number Title Priority Date Filing Date
JP840387A Pending JPS63177428A (en) 1987-01-16 1987-01-16 Sealing method for semiconductor device with resin

Country Status (1)

Country Link
JP (1) JPS63177428A (en)

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