JPS63172482A - Optical integrated element - Google Patents
Optical integrated elementInfo
- Publication number
- JPS63172482A JPS63172482A JP62003304A JP330487A JPS63172482A JP S63172482 A JPS63172482 A JP S63172482A JP 62003304 A JP62003304 A JP 62003304A JP 330487 A JP330487 A JP 330487A JP S63172482 A JPS63172482 A JP S63172482A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- light
- photodetector
- receiving element
- groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 20
- 239000004065 semiconductor Substances 0.000 claims abstract description 54
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000013078 crystal Substances 0.000 abstract description 4
- 230000008878 coupling Effects 0.000 abstract description 3
- 238000010168 coupling process Methods 0.000 abstract description 3
- 238000005859 coupling reaction Methods 0.000 abstract description 3
- 238000002310 reflectometry Methods 0.000 abstract 1
- 238000004904 shortening Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- TUCNEACPLKLKNU-UHFFFAOYSA-N acetyl Chemical compound C[C]=O TUCNEACPLKLKNU-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
- H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Semiconductor Lasers (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は光集積化素子に関し、特に半導体レーザと受光
素子とが同一半導体基板上に形成された光集積化素子に
関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an optical integrated device, and particularly to an optical integrated device in which a semiconductor laser and a light receiving element are formed on the same semiconductor substrate.
（従来の技術）
光通信等の光源として種々の構造の化合物半導体レーザ
が用いられ、またこのような半導体レーザの光出力を検
出するため、半導体レーザを形成した基板と同一基板上
に受光素子を設け、この受光素子によシ半導体レーザの
光出力を検出して、半導体レーザの発光出力の適否を管
理することができる光集積化素子が、文献エレクトロニ
クス・Ｌ／ ／ −ス（ＥＬＥＣＴＲＯＮＩＣ８ＬＥＴ
ＴＥＲ８） 、 １９８０−４−２４゜Ｖｏｌ、 １６
．４９ 、 ｐ、 ｐ、 ３４２−３４３Ｋ ４記載サ
レテイるように、提案されている。(Prior art) Compound semiconductor lasers with various structures are used as light sources for optical communications, etc., and in order to detect the optical output of such semiconductor lasers, a light receiving element is installed on the same substrate as the substrate on which the semiconductor laser is formed. An optical integrated element that can control the suitability of the light output of the semiconductor laser by detecting the light output of the semiconductor laser using the light receiving element is disclosed in the literature Electronics L//-S (ELECTRONIC8LET).
TER8), 1980-4-24゜Vol, 16
．． 49, p, p, 342-343K 4.
通常の光集積化素子は、共振器と垂直方向に数十μｍ＠
の溝をエツチングによ多形成しこの溝によシ分離された
２つのダイオードの一方を半導体レーザ、他方を受光素
子として動作させる。すなわち、前者に順方向バイアス
、後者に逆方向バイアスを印加する事によシそれぞれ半
導体レーザ、受光素子として動作させる事ができる。A typical optical integrated device is several tens of μm in the direction perpendicular to the resonator.
A plurality of grooves are formed by etching, and one of the two diodes separated by the groove operates as a semiconductor laser and the other as a light receiving element. That is, by applying a forward bias to the former and a reverse bias to the latter, they can be operated as a semiconductor laser and a light receiving element, respectively.
このような構成では同一基板上に半導体レーザと受光素
子とを作製するため、それぞれを個別の素子で構成する
場合に比べ全体として小型にでき。In such a structure, since the semiconductor laser and the light receiving element are manufactured on the same substrate, the overall size can be made smaller than when each is formed from individual elements.
また半導体レーザの光軸と受光部が一致しているため位
置合わせが不要であるという利点がある。Another advantage is that alignment is not required because the optical axis of the semiconductor laser and the light receiving section are aligned.
また、通常の受光素子では入射光を効率よく結晶内で吸
収させるため、受光面に反射防止膜をつける。（反射防
止膜がない場合ＩｎＰ等の半導体では一般に３０％程度
の反射損失がある。）（発明が解決しようとする問題点
）
しかしながら、上記構成の光集積化素子では、半導体レ
ーザと受光素子とは数十μｍ幅の溝で分離されているの
で、受光素子の溝部分の受光面に反射防止膜を形成する
ことが困難である。このため受光感度が低下してしまう
という問題点がある。Furthermore, in order to efficiently absorb incident light within the crystal of a normal light receiving element, an antireflection film is applied to the light receiving surface. (If there is no antireflection film, semiconductors such as InP generally have a reflection loss of about 30%.) (Problem to be solved by the invention) However, in the optical integrated device with the above configuration, the semiconductor laser and the light receiving element are separated by grooves having a width of several tens of micrometers, so it is difficult to form an antireflection film on the light receiving surface of the groove portion of the light receiving element. Therefore, there is a problem that the light receiving sensitivity is reduced.
また受光面からの反射光が半導体レーザの特性を劣化さ
せる原因となる。In addition, reflected light from the light receiving surface causes deterioration of the characteristics of the semiconductor laser.
本発明は以上述べた受光素子、の受光面での反射の問題
を除去し、同−半導体基板上忙半導体レーザと受光素子
とを集積化した高性能な光集積化素子を提供することを
目的とする。An object of the present invention is to eliminate the problem of reflection on the light-receiving surface of the light-receiving element described above, and to provide a high-performance optical integrated element in which a semiconductor laser and a light-receiving element are integrated on the same semiconductor substrate. shall be.
（問題点を解決するための手段）
本発明は前記問題点を解決するために、半導体レーザと
モニタ用の受光素子とが同一半導体基板上に形成された
光集積化素子において、この受光素子の受光面を、前記
半導体レーザからの入射光に対してブリュースター角を
なす複数の面で構成したものである。(Means for Solving the Problems) In order to solve the above-mentioned problems, the present invention provides an optical integrated device in which a semiconductor laser and a monitoring light-receiving element are formed on the same semiconductor substrate. The light receiving surface is composed of a plurality of surfaces forming a Brewster angle with respect to the incident light from the semiconductor laser.
（作用）
本発明によれば、以上のように、同一半導体基板上に半
導体レーザと、受光面がこの半導体レーザからの入射光
に対してブリュースター角をなす複数の面で構成される
受光素子とを形成しているので、半導体レーザからの出
力光は受光素子部分に常にブリュースター角で入射する
ことになシ、入射光を効率よく結晶内で吸収させること
ができるものである。さらに、この受光面を複数設ける
ことによシ、発光部から受光面までの距離を短くでき、
結合効率を大きくすることができる。(Function) According to the present invention, as described above, a light-receiving element is formed of a semiconductor laser and a plurality of surfaces whose light-receiving surface forms a Brewster angle with respect to the incident light from the semiconductor laser on the same semiconductor substrate. As a result, the output light from the semiconductor laser does not always enter the light receiving element portion at Brewster's angle, and the incident light can be efficiently absorbed within the crystal. Furthermore, by providing multiple light-receiving surfaces, the distance from the light-emitting part to the light-receiving surface can be shortened.
The coupling efficiency can be increased.
（実施例）
第１図（−）及び（ｂ）は、それぞれ本発明の詳細な説
明するための光集積化素子の斜視図及び平面図であシ、
以下図面を用いて説明する。(Example) FIGS. 1(-) and 1(b) are a perspective view and a plan view, respectively, of an optical integrated device for detailed explanation of the present invention.
This will be explained below using the drawings.
第１図（ａ）において、ｌはＩｎＰ等の化合物半導体基
板、２は半導体レーザ、３は半導体レーザ２からの入射
光をモニタする受光素子、４は電極、５は溝である。通
常の半導体レーザ忙、第１図（、）に示すような形状の
２０μｍ程度幅の溝５を形成し。In FIG. 1(a), 1 is a compound semiconductor substrate such as InP, 2 is a semiconductor laser, 3 is a light receiving element for monitoring the incident light from the semiconductor laser 2, 4 is an electrode, and 5 is a groove. Using a conventional semiconductor laser, a groove 5 having a width of about 20 μm and having a shape as shown in FIG. 1 (2) is formed.
一方を半導体レーザ２、他方を受光素子３として動作さ
せる。ここで、溝５は半導体レーザ２側ではレーザの光
軸に垂直に形成され半導体レーザ２の反射面として用い
られる。また、溝５の受光素子３側は次式（１）で与え
られる曲線群となるようにエツチングを行なう。One is operated as a semiconductor laser 2 and the other as a light receiving element 3. Here, the groove 5 is formed perpendicular to the optical axis of the laser on the semiconductor laser 2 side and is used as a reflection surface of the semiconductor laser 2. Further, the groove 5 on the light receiving element 3 side is etched so as to form a group of curves given by the following equation (1).
。
ｒ ＝ ａｉｅ” （ｉ ＝１ ｓ ２ ＊ ３・
”） ・・・（１）ここで第１図（ｂ）に示すように
、ｒは半導体レーザの出射点からの距離、θは半導体レ
ーザのストライブ方向と出射光とのなす角、ｎは受光素
子３の光吸収層の半導体の屈折率、町は定数とする。こ
の時、受光素子の材料に対するブリュースター角をＯＮ
として
一〇、＝ｎ ・・・（２）
の関係が成立すれば半導体レーザ２からの出力光は受光
素子３部分に常にブリュースター角で入射することにな
シ、原理的に反射率は０となる。例えば受光部をＩｎＧ
ａＡｓＰ （パンドギ−ｗ ｙ ７’ ０．９５ｅＶ）
とすると屈折率は３．５１、すなわちｂ＝３．５１とす
ればよい。この時θ、＝７４°となる。このときのエツ
チングは、従来例の場合と同様、ＨＣｌ ：ＣＨ３ＣＯ
０Ｈ： Ｈ２Ｏ２＝１ ： ２ ： １の混合エツチン
グを用い、１５°Ｃでエツチング、水洗、乾燥をくシ返
す多段エツチング法を用いてもよいし、リアクティブイ
オンエツチング、プラズマエツチング法等を用いてもよ
い。. r = aie” (i = 1 s 2 * 3・
(1) As shown in Figure 1(b), r is the distance from the emission point of the semiconductor laser, θ is the angle between the stripe direction of the semiconductor laser and the emitted light, and n is The refractive index of the semiconductor of the light absorption layer of the light-receiving element 3 is a constant.At this time, the Brewster angle with respect to the material of the light-receiving element is ON.
As 10, = n...(2)
If the following relationship holds true, the output light from the semiconductor laser 2 will always be incident on the light receiving element 3 at the Brewster's angle, and the reflectance will be zero in principle. For example, the light receiving part is made of InG.
aAsP (pandogi-w y 7' 0.95eV)
Then, the refractive index should be 3.51, that is, b=3.51. At this time, θ=74°. Etching at this time was performed using HCl:CH3CO as in the conventional case.
A multi-stage etching method using a mixed etching ratio of 0H:H2O2=1:2:1 and repeating etching, washing with water, and drying at 15°C may be used, or a reactive ion etching method, a plasma etching method, etc. may be used. Good too.
以上のように本発明の実施例によれば、半導体レーザ２
と受光素子３の集積化において、従来半導体レーザのス
トライプと垂直に溝を切っていたのに対し、半導体レー
ザ２側を垂直、受光素子３側を入射光に対してブリュー
スター角をなすように溝５を形成しているので、受光素
子３は半導体レーザ２からの入射光を効率よく結晶内で
吸収することができる。さらに、このように複数の受光
面を形成することによシ、発光部から受光面までの距離
を短くできるため、結合効率を大きくすることができる
。さらに、本発明の実施例忙よれば、従来の製造方法を
用いることができ、高性能な光集積化素子を容易に形成
することができる。As described above, according to the embodiment of the present invention, the semiconductor laser 2
In integrating the light receiving element 3 and the semiconductor laser stripe, conventionally the grooves were cut perpendicular to the stripes of the semiconductor laser, but the grooves were cut perpendicularly to the semiconductor laser 2 side and at a Brewster's angle to the light receiving element 3 side with respect to the incident light. Since the groove 5 is formed, the light receiving element 3 can efficiently absorb the incident light from the semiconductor laser 2 within the crystal. Furthermore, by forming a plurality of light-receiving surfaces in this manner, the distance from the light-emitting section to the light-receiving surface can be shortened, so that the coupling efficiency can be increased. Further, according to the embodiments of the present invention, conventional manufacturing methods can be used, and a high-performance integrated optical device can be easily formed.
（発明の効果）
以上のように本発明の構造によれば、受光部分における
反射がなくなり、受光素子の感度が向上するとともに反
射光による半導体レーザの特性劣化を除去でき、半導体
レーザと受光素子とを近接して同一基板上に集積化した
高性能な光集積化素子を実現することができる。(Effects of the Invention) As described above, according to the structure of the present invention, reflection at the light-receiving part is eliminated, the sensitivity of the light-receiving element is improved, and characteristic deterioration of the semiconductor laser due to reflected light can be eliminated, and the semiconductor laser and the light-receiving element are It is possible to realize a high-performance optical integrated device in which these elements are closely integrated on the same substrate.
第１図（、）及び（ｂ）は、それぞれ本発明の詳細な説
明するための光集積化素子の斜視図及び平面図である・
１・・・化合物半導体基板、２・・・半導体レーザ、３
・・・受光素子、４・・・電極、５・・・溝。
特許出願人 沖電気工業株式会社
（（１）斜視図
（ｂ）′＋面凹
突紗１１ｔ？ＭｔｂＡｓａ＆１ｌｄ４ｓｉｉｓ！第１図1(a) and (b) are a perspective view and a plan view, respectively, of an optical integrated device for explaining the present invention in detail. 1... Compound semiconductor substrate, 2... Semiconductor laser, 3
... Light receiving element, 4... Electrode, 5... Groove. Patent applicant: Oki Electric Industry Co., Ltd. ((1) Perspective view (b)' + Concave surface gusset 11t? MtbAsa & 1ld4siis! Figure 1
Claims (1)
れた光集積化素子において、 前記受光素子の受光面が、前記半導体レーザからの入射
光に対してブリュースター角をなす複数の面で構成され
てなることを特徴とする光集積化素子。[Claims] In an optical integrated device in which a semiconductor laser and a light receiving element are formed on the same semiconductor substrate, a light receiving surface of the light receiving element forms a Brewster angle with respect to the incident light from the semiconductor laser. An optical integrated device characterized by being composed of a plurality of surfaces.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62003304A JPS63172482A (en) | 1987-01-12 | 1987-01-12 | Optical integrated element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62003304A JPS63172482A (en) | 1987-01-12 | 1987-01-12 | Optical integrated element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63172482A true JPS63172482A (en) | 1988-07-16 |
Family
ID=11553618
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62003304A Pending JPS63172482A (en) | 1987-01-12 | 1987-01-12 | Optical integrated element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63172482A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03105985A (en) * | 1989-09-20 | 1991-05-02 | Matsushita Electron Corp | Semiconductor photodetector and optical semiconductor device using same |
| WO1997048137A1 (en) * | 1996-06-13 | 1997-12-18 | The Furukawa Electric Co., Ltd. | Semiconductor waveguide type photodetector and method for manufacturing the same |
-
1987
- 1987-01-12 JP JP62003304A patent/JPS63172482A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03105985A (en) * | 1989-09-20 | 1991-05-02 | Matsushita Electron Corp | Semiconductor photodetector and optical semiconductor device using same |
| WO1997048137A1 (en) * | 1996-06-13 | 1997-12-18 | The Furukawa Electric Co., Ltd. | Semiconductor waveguide type photodetector and method for manufacturing the same |
| US6177710B1 (en) | 1996-06-13 | 2001-01-23 | The Furukawa Electric Co., Ltd. | Semiconductor waveguide type photodetector and method for manufacturing the same |
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