JPS59103394A - Laser diode with detector - Google Patents
Laser diode with detectorInfo
- Publication number
- JPS59103394A JPS59103394A JP21277182A JP21277182A JPS59103394A JP S59103394 A JPS59103394 A JP S59103394A JP 21277182 A JP21277182 A JP 21277182A JP 21277182 A JP21277182 A JP 21277182A JP S59103394 A JPS59103394 A JP S59103394A
- Authority
- JP
- Japan
- Prior art keywords
- laser
- face
- section
- detector
- photodetector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
- H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/02—ASE (amplified spontaneous emission), noise; Reduction thereof
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は光検出器とレーザとが同一基板上に形成しであ
る検出器付レーザダイオードに係り、特に両者の間の不
要な光学的相互作用(クロス) −り)を防止し得る検
出器付レーザダイオードに関する。[Detailed Description of the Invention] [Field of Application of the Invention] The present invention relates to a laser diode with a detector in which a photodetector and a laser are formed on the same substrate, and particularly relates to a laser diode with a detector in which a photodetector and a laser are formed on the same substrate. The present invention relates to a laser diode with a detector that can prevent (cross) - ri).
従来のこの種の検出器付レーザダイオードの一例は、I
nP/InGaAsPを用いたダブルへテロ構造の化合
物半導体の結晶にストライプ状の金属電極が付けてあシ
、か?当該結晶の中央部で該電極に直交する方向に化学
的あるいは物理的な蝕刻によって蝕刻溝部が形成してあ
り、該溝部に対して片側の部分をレーザとして、また他
方の側の部分を光検出器として用いるものである。なお
、該光検出部とレーザとは同一断面形状を持っているが
、電気的には逆方向にバイアス電圧を掛けて用いられる
(ビー・アイ・ミラとケイ・イガによる、アブライド・
フィジックス・レターズ(B、I。An example of a conventional laser diode with a detector of this type is I
A striped metal electrode attached to a double heterostructure compound semiconductor crystal using nP/InGaAsP? An etched groove is formed in the center of the crystal by chemical or physical etching in a direction perpendicular to the electrode, and one side of the groove is used as a laser and the other side is used for optical detection. It is used as a vessel. Although the photodetector and the laser have the same cross-sectional shape, they are electrically used by applying bias voltages in opposite directions (as described in Abride by B.I. Mira and K. Iga).
Physics Letters (B, I.
Miller and K、 Iga、Appl、Ph
ys、Lett、 )の37巻4号339頁(1980
年)。Miller and K, Iga, Appl, Ph.
Lett, Vol. 37, No. 4, p. 339 (1980
Year).
しかしながら、上で例示したような化合物半導体レーザ
と光検出器とがモノリシックに、即ち同一基板(チップ
)上に形成された従来の検出器付レーザダイオードにあ
っては、両者の間の光学的な相互作用のため、光検出器
とレーザとがダブルキャビティを形成し、不要のレーザ
発振を起こす場合が多々ある。However, in conventional laser diodes with detectors in which a compound semiconductor laser and a photodetector are monolithically formed on the same substrate (chip) as exemplified above, the optical Due to the interaction, the photodetector and laser often form a double cavity, causing unwanted laser oscillation.
本発明はこのような従来技術の実情に鑑みてなされたも
ので、その目的は光検出器とレーザとが同一基板上に形
成しであるものにおいて、両者の間の不要な光学的相互
作用を防止することができる検出器付レーザダイオード
を提供するにある。The present invention has been made in view of the actual state of the prior art, and its purpose is to eliminate unnecessary optical interaction between a photodetector and a laser when they are formed on the same substrate. The object of the present invention is to provide a laser diode with a detector that can prevent the above problems.
この目的を達成するために本発明は、光検出部とレーザ
部とを分離する溝部の形状を工夫したものであり、レー
ザ部の光出力端面に近接対向して設置された光検出部の
光入力端面を、レーザ部の光出力端面に対して平行に配
置していないことを特徴としている。また、望ましくは
、レーザ部光出力端面と光検出部光入力端面との成す角
度が10°から30°の範囲内にある。さらに望ましく
は、両者の端面間の距離(両者のそれぞれの端面におけ
る活性層の幅方向の中点を結ぶ線分の長さ)が500μ
mよシ狭くなっている。In order to achieve this object, the present invention devises the shape of the groove that separates the photodetector and the laser section, so that the light of the photodetector, which is installed close to and opposite to the light output end face of the laser section, is devised. It is characterized in that the input end face is not arranged parallel to the light output end face of the laser section. Further, desirably, the angle formed by the light output end face of the laser section and the light input end face of the photodetector section is within the range of 10° to 30°. More preferably, the distance between the end faces of both (the length of the line segment connecting the midpoint in the width direction of the active layer on each end face of both) is 500 μm.
It's getting narrower than m.
以下、本発明の一実施例を図面に基づいて説明する。第
1図は本発明の一実施例の検出器付レーザダイオードの
斜視図である。第1図に示す本実施例の検出器付レーザ
ダイオードは、InP/InGaAsp あるいはG
a A、 s / G a kth s によって
作られたダブルへテロ構造の結晶に、湿式化学蝕刻によ
って、図示のような蝕刻溝が形成しである。この図にお
いて、1はレーザ(レーザ部)、2は光検出器(光検出
部)、3はレーザ部ストライブ電極、4は光検出部スト
ライプ電極、5はGaAtAs あるいはInGaAs
P等のレーザ部活性層、6は同じ< G a A lk
s あるいはI n G a A s P等の光検
出部活性層、7はレーザ部光出力端面、8は光検出部光
入力端面、9は溝部、11はレーザ部光出力端面7と光
検出部光入力端面8との成す角就、12はレーザ部光出
力端面7と光検出部光入力端面8との距離、即ちレーザ
部光出力端面7におけるレーザ部活性層50幅方向の中
点と光検出部光入力端面8における光検出部活性層6の
幅方向の中点とを結ぶ線分の長さである。本発明の検出
器付レーザダイオードは、レーザ部光出力端面7と光検
出器部光入力端面8とが平行に配置されないように、即
ちレーザ部光出力端面7と光検出部光入力端面8との成
す角度11が例えば、15°、20°、30°等の値を
取るように64部9を作成しである。この溝部9の蝕刻
は、ストライプ状電!(4,5)の形成後に、ホトレジ
ストを用いて、角度11が所定の値を成す各端面(7゜
8)のパターンを形成した後、適当な蝕刻液もしくは、
Cl3を用いた反応性イオンビームエツチングによって
行った。上記蝕刻液としては、I n P / I n
G a A s P 結晶の場合は、HCl−CH5
COOH: H2C)+ (1: 2 : 1 )の溶
液を用い、GaAs/GaAtAs 結晶の場合は、
N H40HあるいはH3P04 (CヨッテpH調節
したH 202水溶液、あるいはB r 2− CH3
0Hの溶液、またはH3po。Hereinafter, one embodiment of the present invention will be described based on the drawings. FIG. 1 is a perspective view of a laser diode with a detector according to an embodiment of the present invention. The laser diode with detector of this embodiment shown in FIG. 1 is InP/InGaAsp or G
Etched grooves as shown in the figure are formed by wet chemical etching on the double heterostructure crystal produced by aA,s/Gakths. In this figure, 1 is a laser (laser section), 2 is a photodetector (photodetection section), 3 is a laser section stripe electrode, 4 is a photodetection section stripe electrode, and 5 is GaAtAs or InGaAs.
Laser part active layer such as P, 6 is the same < G a A lk
s or an active layer of the photodetection section such as InGaAsP, 7 is the laser section light output end face, 8 is the light input end face of the photodetection section, 9 is the groove, 11 is the laser section light output end surface 7 and the photodetection section The angle 12 formed with the light input end surface 8 is the distance between the laser section light output end surface 7 and the photodetector section light input end surface 8, that is, the distance between the widthwise midpoint of the laser section active layer 50 on the laser section light output end surface 7 and the light This is the length of a line segment connecting the light input end face 8 of the detection section to the midpoint in the width direction of the active layer 6 of the photodetection section. The laser diode with a detector of the present invention is arranged such that the laser section light output end surface 7 and the photodetector section light input end surface 8 are not arranged in parallel; The 64 portions 9 are created so that the angle 11 formed by the angle 11 takes a value of, for example, 15°, 20°, 30°, etc. This etching of the groove portion 9 is a striped electric pattern! After forming (4, 5), use a photoresist to form a pattern of each end face (7°8) in which the angle 11 has a predetermined value, and then apply an appropriate etching solution or
This was done by reactive ion beam etching using Cl3. As the above-mentioned etching solution, I n P / I n
In the case of G a A s P crystal, HCl-CH5
Using a solution of COOH: H2C) + (1:2:1), in the case of GaAs/GaAtAs crystal,
N H40H or H3P04 (pH adjusted H202 aqueous solution, or B r 2- CH3
0H solution, or H3po.
: H2O2: HOCH2CH20H(エチレングリ
コール)の(1:1:3)の溶液を用いた。: H2O2: A solution of HOCH2CH20H (ethylene glycol) (1:1:3) was used.
本発明者の実験の結果、両端面が平行な配置が取っであ
る検出器付レーザダイオードに比較して、出力及びモー
ドの安定したレーザ発振が得られた。As a result of the inventor's experiments, laser oscillation with stable output and mode was obtained compared to a laser diode with a detector, which has both end faces parallel to each other.
なお、両端面<7.8)の成す角度11が10゜以上の
場合、光検出器2へ入射した光が該光検出器2の内部に
おいて反射した後、レーザ1に向っで光がffとんど出
て来ないことが、反射に関するプレネルの法則から導か
れる。また、該角度11があまり大きくなく、例えば4
5°以下である場合、レーザ1からの光が光検出部光入
力端面8によって反射されずに光検出器2の内部へ入る
量が大きくなることが、やはシフレネルの法則から導か
れる。即ち、本発明においては、特に該角度が10°か
ら30°の範囲内にある姿合が最も効率良く光の検出が
行われると同時に、レーザ1と光検出器2との間の不要
な相互作用が少なくて済む。Note that when the angle 11 formed by both end surfaces <7.8) is 10° or more, the light incident on the photodetector 2 is reflected inside the photodetector 2, and then the light is directed toward the laser 1 and becomes ff. It is derived from Plenel's law regarding reflection that it rarely occurs. Also, the angle 11 is not very large, for example 4
When the angle is 5° or less, it is derived from Schiffrenel's law that the amount of light from the laser 1 that enters the inside of the photodetector 2 without being reflected by the light input end face 8 of the photodetector section increases. That is, in the present invention, light is detected most efficiently especially when the angle is within the range of 10° to 30°, and at the same time unnecessary mutual interaction between the laser 1 and the photodetector 2 is avoided. It has less effect.
また、前記距離12は短い稈元の検出効率が良いが、そ
の値が500μrnより小さければ実用可能であること
が本発明者によって確められている。Furthermore, although the distance 12 has a good detection efficiency for short culms, the inventor has confirmed that it is practical if the distance is smaller than 500 μrn.
上記のように、本発明の検出器付レーザダイオードは、
光演出部光入力端面をレーザ部光出力端面に対して平行
に配置していないことにより、当該レーザダイオードの
出力及びモードが安定し、単体レーザに匹敵する性能を
得ることができる効果がある。As mentioned above, the laser diode with detector of the present invention has the following features:
Since the light input end face of the light production section is not arranged parallel to the light output end face of the laser section, the output and mode of the laser diode are stabilized, and there is an effect that performance comparable to that of a single laser can be obtained.
第1図は本発明の一実施例の検出器付レーザダイオード
の斜視図である。
1・・・レーザ、2・・・光検出器、3・・・レーザ部
ストラ第 1 目
479FIG. 1 is a perspective view of a laser diode with a detector according to an embodiment of the present invention. 1...Laser, 2...Photodetector, 3...Laser part strut 1st eye 479
Claims (1)
によって分離される光検出部とレーザ部とを同一基板上
に有し、該溝部の深さ方向のレーザ部側の壁がレーザ部
光出力端面、該端面に近接対向する光検出部側の壁が光
検出部光入力端面である検出器付レーザダイオードにお
いて、前記光検出部光入力端面を、レーザ部光出力端面
に対して平行に配置していないことを特徴とする検出器
付レーザダイオード。 2、前記レーザ部光出力端面と光検出部光入力端面との
成す角度が106から30’の範囲内にあることを特徴
とする特許請求の範囲第1項記載の検出器付レーザダイ
オード。 3、前記レーザ部光出力端面および光検出部光入力端面
におけるそれぞれの活性層の幅方向の中点どうしを結ぶ
線分の長さが500μmよシ小さいことを特徴とする特
許請求の範囲第1項または第2項記載の検出器付レーザ
ダイオード。[Claims] 1. A photodetecting section and a laser section separated by a groove formed in a portion of a layered crystal of a compound semiconductor are provided on the same substrate, and a laser section is provided on the laser section side in the depth direction of the groove. In a laser diode with a detector, in which a wall is a light output end face of the laser section, and a wall on the side of the photodetector that is close to and opposite to the end face is a light input end face of the photodetector, the light input end face of the photodetector section is connected to the light output end face of the laser section. A laser diode with a detector characterized in that the laser diode is not arranged parallel to the detector. 2. The laser diode with a detector according to claim 1, wherein the angle formed by the light output end face of the laser section and the light input end face of the photodetector section is within the range of 106 to 30'. 3. The first aspect of the present invention is characterized in that the length of the line segment connecting the midpoints in the width direction of the active layers of the laser part light output end face and the photodetector part light input end face is smaller than 500 μm. A laser diode with a detector according to item 1 or 2.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21277182A JPS59103394A (en) | 1982-12-06 | 1982-12-06 | Laser diode with detector |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21277182A JPS59103394A (en) | 1982-12-06 | 1982-12-06 | Laser diode with detector |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS59103394A true JPS59103394A (en) | 1984-06-14 |
Family
ID=16628122
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP21277182A Pending JPS59103394A (en) | 1982-12-06 | 1982-12-06 | Laser diode with detector |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59103394A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6139966U (en) * | 1984-08-16 | 1986-03-13 | ソニー株式会社 | Semiconductor composite equipment |
JPS62195191A (en) * | 1986-02-21 | 1987-08-27 | Nippon Telegr & Teleph Corp <Ntt> | Light emitting/receiving device |
JPS63200358U (en) * | 1987-06-11 | 1988-12-23 | ||
JPH03179792A (en) * | 1989-07-27 | 1991-08-05 | Internatl Business Mach Corp <Ibm> | Monolithic semiconductor laser diode and photodiode structure |
EP0722207A1 (en) * | 1995-01-13 | 1996-07-17 | Siemens Aktiengesellschaft | Optical integration of semiconductor laser and monitoring detector |
JP2007529087A (en) * | 2003-07-10 | 2007-10-18 | サンドビック インテレクチュアル プロパティー アクティエボラーグ | Electric heating element including radiant tube |
-
1982
- 1982-12-06 JP JP21277182A patent/JPS59103394A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6139966U (en) * | 1984-08-16 | 1986-03-13 | ソニー株式会社 | Semiconductor composite equipment |
JPS62195191A (en) * | 1986-02-21 | 1987-08-27 | Nippon Telegr & Teleph Corp <Ntt> | Light emitting/receiving device |
JPS63200358U (en) * | 1987-06-11 | 1988-12-23 | ||
JPH03179792A (en) * | 1989-07-27 | 1991-08-05 | Internatl Business Mach Corp <Ibm> | Monolithic semiconductor laser diode and photodiode structure |
EP0722207A1 (en) * | 1995-01-13 | 1996-07-17 | Siemens Aktiengesellschaft | Optical integration of semiconductor laser and monitoring detector |
JP2007529087A (en) * | 2003-07-10 | 2007-10-18 | サンドビック インテレクチュアル プロパティー アクティエボラーグ | Electric heating element including radiant tube |
JP4728233B2 (en) * | 2003-07-10 | 2011-07-20 | サンドビック インテレクチュアル プロパティー アクティエボラーグ | Electric heating element including radiant tube |
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