JPS63170803A - Manufacture of non-reducing dielectric ceramic - Google Patents
Manufacture of non-reducing dielectric ceramicInfo
- Publication number
- JPS63170803A JPS63170803A JP62002996A JP299687A JPS63170803A JP S63170803 A JPS63170803 A JP S63170803A JP 62002996 A JP62002996 A JP 62002996A JP 299687 A JP299687 A JP 299687A JP S63170803 A JPS63170803 A JP S63170803A
- Authority
- JP
- Japan
- Prior art keywords
- dielectric constant
- dielectric
- mol
- temperature
- change rate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000000919 ceramic Substances 0.000 title description 10
- 238000010304 firing Methods 0.000 claims description 6
- 229910052573 porcelain Inorganic materials 0.000 claims description 5
- 239000000843 powder Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 239000006104 solid solution Substances 0.000 description 4
- 229910002971 CaTiO3 Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910002113 barium titanate Inorganic materials 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000010953 base metal Substances 0.000 description 2
- 239000003985 ceramic capacitor Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- 229910002976 CaZrO3 Inorganic materials 0.000 description 1
- 229910000807 Ga alloy Inorganic materials 0.000 description 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000010410 dusting Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000002075 main ingredient Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 239000012856 weighed raw material Substances 0.000 description 1
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
（産業上の利用分野）
この発明は非還元性誘電体磁器の製造方法に関し、特に
たとえば積層コンデンサなどの誘電体材料として用いら
れる非還元性誘電体磁器の製造方法に関する。Detailed Description of the Invention (Industrial Application Field) The present invention relates to a method for manufacturing non-reducible dielectric ceramics, and particularly relates to a method for manufacturing non-reducible dielectric ceramics used as dielectric materials such as multilayer capacitors. .
（従来技術）
従来、積層コンデンサを製造する際には、その上面にた
とえば印刷することによって内部電極となる金属粉末層
が形成された誘電体グリーンシートを、複数枚積み重ね
て圧着、一体化した後、その一体化物を焼成するという
工程が採用されている。(Prior art) Conventionally, when manufacturing a multilayer capacitor, a plurality of dielectric green sheets, each of which has a metal powder layer that will become an internal electrode by printing on its top surface, are stacked, crimped, and integrated. , a process of firing the integrated product is adopted.
（発明が解決しようとする問題点）
従来の誘電体磁器は、低酸素分圧下で焼成すると還元さ
れ、その比抵°抗が著しく劣化するという性質を有して
いた。このため、その焼成は空気中等の高酸素分圧下で
、たとえば１，３００℃以上の高い温度で行われていた
。したがって、このような熱処理条件に耐え得る内部電
極の材料として、たとえばパラジウム、白金などの貴金
属を用いなければならなく、そのため、製造される積層
コンデンサの大容量化および低価格化の大きな妨げとな
っていた。(Problems to be Solved by the Invention) Conventional dielectric ceramics have the property that when fired under low oxygen partial pressure, they are reduced and their specific resistance deteriorates significantly. For this reason, the firing was performed under high oxygen partial pressure in air or the like at a high temperature of, for example, 1,300° C. or higher. Therefore, noble metals such as palladium and platinum must be used as materials for the internal electrodes that can withstand such heat treatment conditions, which is a major hindrance to increasing the capacity and lowering the price of manufactured multilayer capacitors. was.
そこで、本発明者らは、上述の問題を解決するために、
たとえばニッケルなどの卑金属を内部電極の材料として
使用することができるように、低酸素分圧下で焼成して
も還元されず高い比抵抗を有する誘電体磁器を創作した
。この誘電体磁器として、特公昭５６−４６６４１号公
報には、（（Ｂａ、 Ｃａ）０１ ｍ ・（Ｔｉ、
Ｚｒ）０２よりなる固溶体が開示されている。しかしな
がら、この公報に開示されている製造方法で製造された
誘電体磁器では、その磁器組成物が焼結過程で一様な固
溶体をなすため、そのキュリ一点が単一となり、そのた
め、その誘電率の温度変化率が大きかった。Therefore, in order to solve the above-mentioned problem, the present inventors
For example, we created dielectric porcelain that does not reduce even when fired under low oxygen partial pressure and has a high specific resistance so that base metals such as nickel can be used as materials for internal electrodes. As this dielectric porcelain, Japanese Patent Publication No. 56-46641 describes ((Ba, Ca)01 m ・(Ti,
A solid solution consisting of Zr)02 is disclosed. However, in the dielectric porcelain manufactured by the manufacturing method disclosed in this publication, since the porcelain composition forms a uniform solid solution during the sintering process, the Curie point is single, and therefore the dielectric constant The rate of temperature change was large.
そこで、本発明者は、鋭意努力の結果、ＢａＴｉＯ３に
Ｚｒ０ｚおよびＣａＯ等を焼結過程で完全には固溶させ
ないことによって、誘電率の温度変化率を小さくするこ
とができることを見出した。As a result of diligent efforts, the inventors of the present invention have found that the temperature change rate of the dielectric constant can be reduced by not completely dissolving Zr0z, CaO, etc. in BaTiO3 during the sintering process.
それゆえに、この発明の主たる目的は、非酸化性雰囲気
中で焼成しても、還元されて半導体化することなく高い
比抵抗を示し、かつ、高い誘電率を有し、しかも、誘電
率の温度変化率が小さい非還元性誘電体磁器を製造する
ことができる、非還元性誘電体磁器の製造方法を提供す
ることである。Therefore, the main object of the present invention is to exhibit a high resistivity without being reduced and turned into a semiconductor even when fired in a non-oxidizing atmosphere, and to have a high dielectric constant, and also to It is an object of the present invention to provide a method for manufacturing non-reducible dielectric ceramics that can manufacture non-reducible dielectric ceramics with a small rate of change.
（問題点を解決するための手段）
この発明は、ＢａＯとＴｉＯ□とのモル比がＢａＯ／Ｔ
ｉＯ２比で１．００２〜１．０５の範囲にある仮焼され
たＢａＴｘＯｚ、仮焼された等モル比のＣａＴｉ０．お
よび仮焼された等モル比のＣａＺｒＯｓを、ＢａＴｉＯ
３が８２゜０〜９３．０モル％、ＣａＴｉＯｘが６．０
〜１４．０モル％、およびＣａＺｒ０ｉが１．０〜８．
０モル％の範囲で配合したものを主成分として準備し、
主成分１００モル部に、副成分としてマンガン酸化物お
よび二酸化けい素を、それぞれ、ＭｎＯ□および５ｉＯ
７に換算して、ＭｎＯ，が０．１〜４．０モル部、およ
びＳｉｎ、が０．１〜３．０モル部の範囲で添加し、さ
らに、主成分に副成分を添加したものを焼成する、非還
元性誘電体磁器の製造方法である。(Means for solving the problem) This invention provides that the molar ratio of BaO and TiO□ is BaO/T
Calcined BaTxOz with iO2 ratio in the range of 1.002-1.05, calcined CaTi0. and calcined CaZrOs in equimolar ratios, BaTiO
3 is 82°0 to 93.0 mol%, CaTiOx is 6.0
~14.0 mol%, and CaZr0i is 1.0~8.
Prepared as the main ingredient in a range of 0 mol%,
MnO□ and 5iO
7, MnO is added in a range of 0.1 to 4.0 mol parts, and Sin is added in a range of 0.1 to 3.0 mol parts, and a subcomponent is added to the main component. This is a method for producing non-reducible dielectric ceramics by firing.
（発明の効果）
この発明によれば、非酸化性雰囲気中でたとえば１，２
７０〜１，３６０℃の温度で焼成しても、還元されて半
導体化することなく１０”９口以上の高い比抵抗を示し
、３，０００以上の高い誘電率をもち、しかも、−５５
℃〜＋１２５℃の広い温度範囲において誘電率の温度変
化率が一１５％〜＋１５％の範囲と小さい、非還元性誘
電磁器を製造することができる。(Effect of the invention) According to the invention, for example, 1,2
Even when fired at a temperature of 70 to 1,360°C, it does not reduce and become a semiconductor, exhibiting a high specific resistance of 10"9 or more, and a high dielectric constant of 3,000 or more, and -55
It is possible to produce a non-reducible dielectric ceramic whose temperature change rate of dielectric constant is as small as 115% to +15% over a wide temperature range of 125°C to 125°C.
また、この発明の実施例によれば、さらに、誘電損失が
１．００％未満と小さく、かつ、＋２０℃の温度におけ
る誘電率を基準とした一２５℃〜＋８５℃の温度範囲に
おける誘電率の温度変化率が±１０％未満と小さい、優
れた特性が得られた。Further, according to the embodiment of the present invention, the dielectric loss is as small as less than 1.00%, and the dielectric constant in the temperature range of -25°C to +85°C is based on the dielectric constant at +20°C. Excellent characteristics were obtained with a small temperature change rate of less than ±10%.
したがって、高い誘電率、低い誘電損失および良好な誘
電率温度特性をすべて満足し、かつ、小型で大容量のコ
ンデンサの誘電体材料などとして極めて有用な非還元性
誘電体磁器を製造することができる。しかも、この非還
元性誘電体磁器をたとえば積層セラミックコンデンサの
誘電体材料として用いれば、たとえばニッケルなどの卑
金属を内部電極とした安価な積層セラミックコンデンサ
を得ることができる。Therefore, it is possible to produce a non-reducible dielectric ceramic that satisfies all of high permittivity, low dielectric loss, and good permittivity-temperature characteristics, and is extremely useful as a dielectric material for small, large-capacity capacitors. . Moreover, if this non-reducible dielectric ceramic is used as a dielectric material for a multilayer ceramic capacitor, for example, an inexpensive multilayer ceramic capacitor can be obtained in which internal electrodes are made of a base metal such as nickel.
この発明の上述の目的、その他の目的、特徴および利点
は、以下の実施例の詳細な説明から一層明らかとなろう
。The above objects, other objects, features and advantages of the present invention will become more apparent from the detailed description of the following embodiments.
（実施例）
まず、ＢａＣＯ３とＴｉ０ｚとを、ＢａＣＯ３／ＴｉＯ
２が１゜００２〜１．０５の範囲になるように秤量し、
それらをボールミルで十分に混合して、この混合物を１
２００℃で１時間仮焼した後微粉砕して、ＢａＴｉＯ３
を得た。(Example) First, BaCO3 and TiOz were mixed into BaCO3/TiO
Weigh so that 2 is in the range of 1°002 to 1.05,
Mix them thoroughly with a ball mill and make 1
After calcining at 200℃ for 1 hour, finely pulverized to form BaTiO3
I got it.
これと同様にして、等モルのＣａＣ０，およびＴｉ０ｚ
から仮焼、微粉砕されたＣａＴｔＯｓの粉末と、等モル
のＣａＣ０，およびＺｒ０ｚから仮焼、微粉砕されたＣ
ａＺｒ（ｈの粉末とを、それぞれ得た。Similarly, equimolar amounts of CaC0 and Ti0z
CaTtOs powder calcined and finely pulverized from CaTtOs and equimolar CaC0, and calcined and finely pulverized C from Zr0z.
aZr (h powder) was obtained.
これらの粉末のＸ−ｒａｙ回折像により、これらの粉末
が均一な結晶性を有することを確認した。The X-ray diffraction images of these powders confirmed that these powders had uniform crystallinity.
このようにして得られたＢａＴｉ０＝、 ＣａＴｉＯ３
およびＣａＺｒＯ３の各粉末と、ＭｎＯ，および５ｉＯ
ｔとを、別表１に示した組成比率の誘電体が得られるよ
うに秤量した。なお、表１では、この発明の範囲外の組
成比の数値に下線を付した。BaTi0=, CaTiO3 thus obtained
and each powder of CaZrO3, MnO, and 5iO
t and were weighed so as to obtain a dielectric having the composition ratio shown in Attached Table 1. In Table 1, numerical values of composition ratios outside the scope of the present invention are underlined.
さらに、この秤量原料に酢酸ビニル系有機バインダ５重
量％を加えて湿式混合してから、蒸発。Furthermore, 5% by weight of a vinyl acetate organic binder was added to this weighed raw material, wet mixed, and then evaporated.
乾燥および整粒の工程を経て粉末を得た。そして、この
粉末を２０００ ｋｇ／ｃｄの圧力で直径１０鶴。A powder was obtained through drying and sizing steps. This powder was then compressed into a diameter of 10 pieces under a pressure of 2000 kg/cd.
厚さ１１１に成形して成形物を得た。A molded product was obtained by molding to a thickness of 111 mm.
この成、彫物を、ジルコニア粉末を敷粉としてアルミナ
質の匣に入れて、Ｈ，／Ｎアの体積比率が３／１００の
還元性ガス雰囲気中において、ｌ。This completed carving was placed in an alumina box with zirconia powder as a dusting powder, and placed in a reducing gas atmosphere with a volume ratio of H,/NA of 3/100.
２７０℃〜１，３６０℃の温度で焼成して、素子を得た
。A device was obtained by firing at a temperature of 270° C. to 1,360° C.
得られた素子の両面に、Ｉｎ −Ｇａ合金を塗布して、
電極を形成し、各試料を得た。Applying In-Ga alloy to both sides of the obtained element,
Electrodes were formed and each sample was obtained.
そして、各試料の誘電率ε、誘電損失ｔａｎ δ。Then, the dielectric constant ε and dielectric loss tan δ of each sample.
誘電率の温度変化率および比抵抗の電気的特性を次の条
件で測定した。The electrical characteristics of the temperature change rate of dielectric constant and specific resistance were measured under the following conditions.
誘電率εおよび誘電損失ｔａｎ δは、１ｋＨｚの周波
数で２５℃の温度で測定した。The dielectric constant ε and the dielectric loss tan δ were measured at a frequency of 1 kHz and a temperature of 25°C.
誘電率の温度変化率は、＋２５℃の温度における誘電率
を基準とした一５５℃〜＋１２５℃の温度範囲の誘電率
の温度変化率（Δｃ ／ Ｃ２５）と、＋２０℃の温度
における誘電率を基準とした一２５℃〜＋８５℃の温度
範囲の誘電率の温度変化率（ΔＣ／ Ｃ２゜）とを、そ
れぞれ測定した。The temperature change rate of the dielectric constant is the temperature change rate of the dielectric constant (Δc/C25) in the temperature range of -55℃ to +125℃ based on the dielectric constant at a temperature of +25℃, and the dielectric constant at a temperature of +20℃. The temperature change rate (ΔC/C2°) of the dielectric constant was measured in a temperature range of −25° C. to +85° C. as a reference.
比抵抗は、２５℃の温度において、ＤＣ，５００Ｖを２
分間印加した後測定した。Specific resistance is DC, 500V at 25°C.
Measurements were taken after applying the voltage for a minute.
上述の測定結果を別表２に示した。なお、表２では、特
性の悪い数値に下線を付した。この場合、誘電率εにつ
いては３，０００未満のものを、誘電損失ｔａｎ δに
ついては１％以上のものを、誘電率の温度変化率（ΔＣ
／Ｃｚｓ）については−１５〜＋１５％の範囲外のもの
を、誘電率の温度変化率（ΔＣ／Ｃ２６）については−
１０〜＋１０％の範囲外のものを、比抵抗については１
０１２Ω・ｃｍ未満のものを、それぞれ、特性の悪いも
のとして示した。The above measurement results are shown in Attached Table 2. In Table 2, numerical values with poor characteristics are underlined. In this case, the dielectric constant ε is less than 3,000, the dielectric loss tan δ is 1% or more, and the temperature change rate of the dielectric constant (ΔC
/Czs) outside the range of -15 to +15%, and temperature change rate of dielectric constant (ΔC/C26) -
Those outside the range of 10 to +10%, 1 for specific resistance
Those with a value of less than 0.012 Ω·cm were respectively shown as having poor characteristics.
つまり、試料番号１のように、主成分として使用したＢ
ａＴｉＯ３において、ＢａＯ／ＴｉＯ□のモル比カ月、
００２未満であると、還元焼成により比抵抗が小さくな
りまた誘電率の温度変化率が大きくなる。In other words, as in sample number 1, B used as the main component
In aTiO3, the molar ratio of BaO/TiO□ is
If it is less than 002, the specific resistance becomes small due to reduction firing and the temperature change rate of the dielectric constant becomes large.
一方、試料番号４のように、ＢａＯ／Ｈｏｔのモル比が
１．０５をを超えると、誘電率が小さくなりかつ焼結性
が悪くなる。On the other hand, when the BaO/Hot molar ratio exceeds 1.05, as in Sample No. 4, the dielectric constant becomes small and the sinterability deteriorates.
また、試料番号８のようにＢａＴｉ０．が８２モル％未
満では誘電率が小さくなり、試料番号１０のようにＢａ
Ｔｉ０ｉＡ’ ９３モル％を超えると誘電率の温度特性
が悪（なる。In addition, as in sample number 8, BaTi0. When Ba is less than 82 mol%, the dielectric constant becomes small, and Ba
If TiOiA' exceeds 93 mol%, the temperature characteristics of the dielectric constant will be poor.
試料番号５およびｌＯのようにＣａＴｉＯ３が６モル％
未満であると誘電率の温度変化率が一１５％を超え、試
料番号７のようにＣａＴｉ０．が１４モル％を超えると
誘電率が小さくなる。CaTiO3 is 6 mol% like sample number 5 and lO
If it is less than 1, the temperature change rate of dielectric constant exceeds 115%, and as in sample number 7, CaTi0. If it exceeds 14 mol%, the dielectric constant becomes small.
また、試料番号６のようにＣａＺｒ０ａが１モル％未満
であると誘電率の温度変化率が一１５％を超え、試料番
号９のようにＣａＺｒ０ｉが８モル％を超えると誘電率
が小さくなる。Further, when CaZr0a is less than 1 mol% as in Sample No. 6, the temperature change rate of the dielectric constant exceeds 115%, and when CaZr0i exceeds 8 mol% as in Sample No. 9, the dielectric constant becomes small.
一方、試料番号１９のようにＭｎＯ，が０．１モル部未
満であると誘電率が小さくなりかつ誘電率の温度特性が
悪くなり、試料番号２２のようにＭｎＯ□が４モル部を
超えると誘電率が小さくなる。On the other hand, when MnO is less than 0.1 mol part as in sample number 19, the dielectric constant becomes small and the temperature characteristics of the dielectric constant become poor, and when MnO□ exceeds 4 mol parts as in sample number 22. Dielectric constant decreases.
試料番号２３のようにＳｉＯ□が０．１モル部未満であ
ると、焼結性が低下しかつ誘電率の温度変化率が大きく
なり、試料番号２６のようにＳｉＯ□が３モル部を超え
ると、誘電率が小さくなりかつ誘電率の温度変化率が大
きくなる。When SiO □ is less than 0.1 mol part as in sample number 23, the sinterability decreases and the temperature change rate of the dielectric constant increases, and as in sample number 26, SiO □ exceeds 3 mol parts. Then, the dielectric constant becomes small and the rate of change of the dielectric constant with temperature becomes large.
また、参照例として特公昭５６−４６６４１号公報に開
示されているように、ＢａＴｉＯ３，ＣａＴｉＯ３およ
びＣａＺｒ０ｉの各成分を経ることなく作成した（（Ｂ
ａ、 Ｃａ）０） ｍ ・（Ｔｉ、 Ｚｒ）Ｏｚより
なる固溶体の組成と、その誘電率、誘電損失、誘電率の
温度変化率および比抵抗とを、それぞれ、別表１と別表
２とに試料番号２８として示した。この試料番号２８に
対応する本発明の実施例の組成およびその電気的特性を
、別表１および別表２に、試料番号２７として示した。In addition, as a reference example, as disclosed in Japanese Patent Publication No. 56-46641, BaTiO3, CaTiO3, and CaZr0i were prepared without passing through each component ((B
a, Ca)0) The composition of the solid solution consisting of m ・(Ti, Zr)Oz, its dielectric constant, dielectric loss, temperature change rate of dielectric constant, and specific resistance are shown in Attached Table 1 and Attached Table 2, respectively. It is shown as number 28. The composition and electrical characteristics of an example of the present invention corresponding to sample number 28 are shown as sample number 27 in Attached Tables 1 and 2.
なお、特公昭５６−４６６４１号公報においては副成分
を含有していないが、試料番号２８については副成分と
してＭｎＯ２，５ｔＱｚをそれぞれ１モル部、２モル部
添加含有させた。In addition, although no subcomponent was contained in Japanese Patent Publication No. 56-46641, sample No. 28 contained 1 mol part and 2 mol part of MnO2, 5tQz as a subcomponent, respectively.
試料番号２７および２８の結果を比較して明らかなよう
に、試料番号２８では、単一固溶体をなし誘電率が低く
、単一のキュリ一点をもつため誘電率の温度変化率が大
きいという欠点を有しているが、それに対して、本発明
の範囲内の試料番号２７では、高い誘電率と平坦な誘電
率の温度変化率を示すことがわかる。As is clear from comparing the results of sample numbers 27 and 28, sample number 28 is a single solid solution, has a low dielectric constant, and has a single Curie point, so it has the disadvantage that the rate of change in dielectric constant with temperature is large. However, in contrast, it can be seen that sample number 27 within the scope of the present invention exhibits a high dielectric constant and a flat temperature change rate of the dielectric constant.
さらに、別表２から明らかなように、本発明に−よれば
、誘電率が３．０００以上で、誘電損失が１．００％未
満で、しかも、＋２５℃の温度における誘電率を基準と
した一５５℃〜＋１２５℃の温度範囲の誘電率の温度変
化率が±１５％未満であり、かつ、＋２０℃の温度にお
ける誘電率を基準とした一２５℃〜＋８５℃の温度範囲
の誘電率の温度変化率が±１０％未満である、優れた特
性が得られることがわかる。Further, as is clear from Attached Table 2, according to the present invention, the dielectric constant is 3.000 or more, the dielectric loss is less than 1.00%, and the dielectric constant at a temperature of +25°C is The temperature change rate of the dielectric constant in the temperature range of 55°C to +125°C is less than ±15%, and the temperature of the dielectric constant in the temperature range of -25°C to +85°C based on the dielectric constant at a temperature of +20°C. It can be seen that excellent characteristics with a change rate of less than ±10% can be obtained.
特許出願人 株式会社 村田製作所 代理人 弁理士 岡 １） 全 啓 （ほか１名）Patent applicant Murata Manufacturing Co., Ltd. Agent: Patent Attorney Oka 1) Zenhiro (1 other person)
Claims (1)
で１．００２〜１．０５の範囲にある仮焼されたＢａＴ
ｉＯ＿３、仮焼された等モル比のＣａＴｉＯ＿３および
仮焼された等モル比のＣａＺｒＯ＿３を、 ＢａＴｉＯ＿３が８２．０〜９３．０モル％、ＣａＴｉ
Ｏ＿３が６．０〜１４．０モル％、およびＣａＺｒＯ＿
３が１．０〜８．０モル％ の範囲で配合したものを主成分として準備し、前記主成
分１００モル部に、副成分としてマンガン酸化物および
二酸化けい素を、それぞれ、ＭｎＯ＿２およびＳｉＯ＿
２に換算して、 ＭｎＯ＿２が０．１〜４．０モル部、およびＳｉＯ＿２
が０．１〜３．０モル部 の範囲で添加し、さらに 前記主成分に前記副成分を添加したものを焼成する、非
還元性誘電体磁器の製造方法。[Claims] Calcined BaT in which the molar ratio of BaO and TiO_2 is in the range of 1.002 to 1.05 in terms of BaO/TiO_2 ratio.
iO_3, calcined CaTiO_3 in an equimolar ratio and calcined CaZrO_3 in an equimolar ratio, BaTiO_3 is 82.0-93.0 mol%, CaTi
O_3 is 6.0 to 14.0 mol%, and CaZrO_
MnO_2 and SiO_
2, MnO_2 is 0.1 to 4.0 mol parts, and SiO_2
A method for producing non-reducible dielectric porcelain, which comprises adding 0.1 to 3.0 mole parts of the main component and firing the subcomponent added to the main component.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62002996A JPS63170803A (en) | 1987-01-08 | 1987-01-08 | Manufacture of non-reducing dielectric ceramic |
| US07/141,999 US4988468A (en) | 1987-01-08 | 1988-01-06 | Method for producing non-reducible dielectric ceramic composition |
| DE3800198A DE3800198C2 (en) | 1987-01-08 | 1988-01-07 | Process for making a non-reducible dielectric ceramic composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62002996A JPS63170803A (en) | 1987-01-08 | 1987-01-08 | Manufacture of non-reducing dielectric ceramic |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63170803A true JPS63170803A (en) | 1988-07-14 |
Family
ID=11544989
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62002996A Pending JPS63170803A (en) | 1987-01-08 | 1987-01-08 | Manufacture of non-reducing dielectric ceramic |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63170803A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013022064A1 (en) * | 2011-08-11 | 2013-02-14 | 株式会社村田製作所 | Dielectric ceramic, layered ceramic electronic part, layered ceramic capacitor, and method for producing layered ceramic capacitor |
-
1987
- 1987-01-08 JP JP62002996A patent/JPS63170803A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013022064A1 (en) * | 2011-08-11 | 2013-02-14 | 株式会社村田製作所 | Dielectric ceramic, layered ceramic electronic part, layered ceramic capacitor, and method for producing layered ceramic capacitor |
| JPWO2013022064A1 (en) * | 2011-08-11 | 2015-03-05 | 株式会社村田製作所 | Dielectric ceramic, multilayer ceramic electronic component, multilayer ceramic capacitor, and multilayer ceramic capacitor manufacturing method |
| US9522847B2 (en) | 2011-08-11 | 2016-12-20 | Murata Manufacturing Co., Ltd. | Dielectric ceramic, laminated ceramic electronic component, laminated ceramic capacitor, and method for producing laminated ceramic capacitor |
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