JPS63167172U - - Google Patents
Info
- Publication number
- JPS63167172U JPS63167172U JP5954287U JP5954287U JPS63167172U JP S63167172 U JPS63167172 U JP S63167172U JP 5954287 U JP5954287 U JP 5954287U JP 5954287 U JP5954287 U JP 5954287U JP S63167172 U JPS63167172 U JP S63167172U
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- bath
- single crystal
- crystal
- crystal production
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 claims description 19
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 238000010583 slow cooling Methods 0.000 claims description 7
- 238000002360 preparation method Methods 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 2
- 238000002955 isolation Methods 0.000 claims description 2
- 150000002484 inorganic compounds Chemical class 0.000 claims 2
- 229910010272 inorganic material Inorganic materials 0.000 claims 2
- 150000002894 organic compounds Chemical class 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 claims 1
- 230000003247 decreasing effect Effects 0.000 claims 1
- 230000001376 precipitating effect Effects 0.000 claims 1
- 239000012047 saturated solution Substances 0.000 claims 1
- 239000000243 solution Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000012774 insulation material Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
第１図ａ，ｂは本考案による無停電電源付徐冷
法単結晶作製装置の概略構成図、第２図は本考案
装置を構成する結晶作製槽の概略構成図、第３図
は本考案に係る無停電電源付徐冷法単結晶作製装
置の温度制御方式の概略図、第４図は従来の徐冷
法単結晶作製装置の概略構成図である。
１０……温度プログラマー、１１……温度調節
計、１２……サイリスタ、１３……マルチレンジ
モジユール、１４……インプツトコンバータ、１
５……水位低下ブザー、１６……記録計、１７…
…恒温槽、１８……電流計、１９……撹拌調整装
置、２０……循環ノズル、２１……白金抵抗測温
体、２２……結晶作製槽、２３……除震台、２４
……循環パイプ、２５……冷却機構、２６……無
停電電源、２７……内槽、２８……外槽、２９…
…温度媒体循環パイプ、３０……断熱材、３１…
…蓋部、３２……観察窓、３３……覆い蓋、３４
……シール材。
Figures 1a and b are schematic diagrams of a slow cooling single crystal production apparatus with an uninterruptible power supply according to the present invention, Figure 2 is a schematic diagram of a crystal production tank that constitutes the apparatus of the present invention, and Figure 3 is a diagram according to the present invention. A schematic diagram of a temperature control system of a slow cooling single crystal production apparatus with an uninterruptible power supply. FIG. 4 is a schematic diagram of a conventional slow cooling single crystal production apparatus. 10... Temperature programmer, 11... Temperature controller, 12... Thyristor, 13... Multi-range module, 14... Input converter, 1
5...Water level lowering buzzer, 16...Recorder, 17...
... Constant temperature bath, 18 ... Ammeter, 19 ... Stirring adjustment device, 20 ... Circulation nozzle, 21 ... Platinum resistance thermometer, 22 ... Crystal preparation tank, 23 ... Earthquake isolation table, 24
... Circulation pipe, 25 ... Cooling mechanism, 26 ... Uninterruptible power supply, 27 ... Inner tank, 28 ... Outer tank, 29 ...
...Temperature medium circulation pipe, 30...Insulation material, 31...
... Lid part, 32 ... Observation window, 33 ... Covering lid, 34
...Sealing material.
Claims (1)
入れられる結晶作製槽と、この結晶作製槽内の温
度を制御するための恒温槽と、前記恒温槽中の温
度媒体を加熱するヒータを前記結晶作製槽及び前
記恒温槽の両方または一方の測温体電圧に基づい
て制御する温度調節計とを各々少なくとも１つ以
上有してなり、 前記有機または無機化合物の飽和溶液を種結晶
の存在下または非存在下で緩やかに冷却し、その
化合物の溶解度の減少により析出させて単結晶を
作製する徐冷法単結晶作製装置において、 停電時のための無停電電源を具備し、前記結晶
作製槽及び前記恒温槽の両方あるいは一方の温度
調節を任意の温度範囲を温度調節計の入力電圧に
割り当てることのできるマルチレンジモジユール
を介した前記温度調節計により行なうようにした
ことを特徴とする無停電電源付徐冷法単結晶作製
装置。 (2) 前記恒温槽と結晶作製槽とを分離状態で設
置し、かつ結晶作製槽を除震台上に設置したこと
を特徴とする実用新案登録請求の範囲第１項に記
載の無停電電源付徐冷法単結晶作製装置。 (3) 結晶作製温度範囲が−３０°Ｃから９９．
９°Ｃ、温度精度が±０．０５°Ｃ以下、最小温
度勾配が１日あたり０．１°Ｃであることを特徴
とする実用新案登録請求の範囲第１項および第２
項に記載の無停電電源付徐冷法単結晶作製装置。[Claims for Utility Model Registration] (1) A crystal preparation tank into which a saturated solution of an organic or inorganic compound is placed, a constant temperature bath for controlling the temperature inside this crystal preparation bath, and the temperature in the constant temperature bath. and at least one temperature controller that controls a heater that heats the medium based on the temperature sensing voltage of both or one of the crystal production bath and the constant temperature bath, and saturation of the organic or inorganic compound. A slow cooling single crystal production device that produces a single crystal by slowly cooling a solution in the presence or absence of a seed crystal and precipitating a single crystal by decreasing the solubility of the compound, and is equipped with an uninterruptible power supply in case of a power outage. The temperature of both or one of the crystal production bath and the constant temperature bath is controlled by the temperature controller via a multi-range module that can assign an arbitrary temperature range to the input voltage of the temperature controller. A slow cooling single crystal production device with an uninterruptible power supply. (2) The uninterruptible power supply according to claim 1 of the utility model registration claim, characterized in that the constant temperature bath and the crystal preparation bath are installed in a separated state, and the crystal preparation bath is installed on a seismic isolation table. Single crystal production device using slow cooling method. (3) Crystal production temperature range is -30°C to 99°C.
9°C, temperature accuracy of ±0.05°C or less, and minimum temperature gradient of 0.1°C per day Claims 1 and 2
The slow cooling single crystal production device with an uninterruptible power supply described in 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5954287U JPS63167172U (en) | 1987-04-20 | 1987-04-20 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5954287U JPS63167172U (en) | 1987-04-20 | 1987-04-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63167172U true JPS63167172U (en) | 1988-10-31 |
Family
ID=30891131
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5954287U Pending JPS63167172U (en) | 1987-04-20 | 1987-04-20 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63167172U (en) |
-
1987
- 1987-04-20 JP JP5954287U patent/JPS63167172U/ja active Pending
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