JPS63165857U - - Google Patents
Info
- Publication number
- JPS63165857U JPS63165857U JP5880587U JP5880587U JPS63165857U JP S63165857 U JPS63165857 U JP S63165857U JP 5880587 U JP5880587 U JP 5880587U JP 5880587 U JP5880587 U JP 5880587U JP S63165857 U JPS63165857 U JP S63165857U
- Authority
- JP
- Japan
- Prior art keywords
- drain
- transistor
- region
- insulating film
- field insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015556 catabolic process Effects 0.000 claims 1
- 230000003071 parasitic effect Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
第１図は本考案に依る静電破壊保護装置を説明
する断面図、第２図は本考案および従来の静電破
壊保護装置の等価回路を示す回路図、第３図は従
来の静電破壊保護装置を説明する断面図である。
１は半導体基板、２はフイールド酸化膜、３，
４はソースドレイン領域、５はチヤンネルストツ
プ領域、６はゲート電極、７はＮ＋型の拡散領域
、８は層間絶縁膜、９は電極材料層である。
Figure 1 is a cross-sectional view illustrating the electrostatic discharge protection device according to the present invention, Figure 2 is a circuit diagram showing an equivalent circuit of the present invention and the conventional electrostatic discharge protection device, and Figure 3 is a conventional electrostatic discharge protection device. It is a sectional view explaining a protection device. 1 is a semiconductor substrate, 2 is a field oxide film, 3,
4 is a source/drain region, 5 is a channel stop region, 6 is a gate electrode, 7 is an N + type diffusion region, 8 is an interlayer insulating film, and 9 is an electrode material layer.
Claims (1)
ＭＯＳトランジスタのドレインに接続された入力
パツドと前記入力パツドに接続されたフイールド
絶縁膜下にチヤンネル領域を形成した寄生ＭＯＳ
トランジスタと前記フイールド絶縁膜下全面に設
けたチヤンネルストツプ領域とを具備する静電破
壊保護装置において、前記フイールド絶縁膜下の
チヤンネルストツプ領域と前記オープンドレイン
型ＭＯＳトランジスタのドレイン領域とを離間さ
せ前記オープンドレイン型ＭＯＳ′トランジスタ
の前記ドレイン領域の接合耐圧を上昇させること
を特徴とした静電破壊保護装置。 An open-drain MOS transistor, an input pad connected to the drain of the MOS transistor, and a parasitic MOS in which a channel region is formed under a field insulating film connected to the input pad.
In an electrostatic discharge protection device comprising a transistor and a channel stop region provided entirely under the field insulating film, the channel stop region under the field insulating film and the drain region of the open drain type MOS transistor are separated from each other. An electrostatic discharge protection device characterized in that the junction breakdown voltage of the drain region of the open drain type MOS' transistor is increased.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5880587U JPS63165857U (en) | 1987-04-17 | 1987-04-17 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5880587U JPS63165857U (en) | 1987-04-17 | 1987-04-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63165857U true JPS63165857U (en) | 1988-10-28 |
Family
ID=30889707
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5880587U Pending JPS63165857U (en) | 1987-04-17 | 1987-04-17 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63165857U (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5265686A (en) * | 1975-11-27 | 1977-05-31 | Sharp Corp | Production of mos semiconductor device |
| JPS59224164A (en) * | 1983-06-03 | 1984-12-17 | Hitachi Ltd | Electrostatic-breakdown preventing circuit |
-
1987
- 1987-04-17 JP JP5880587U patent/JPS63165857U/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5265686A (en) * | 1975-11-27 | 1977-05-31 | Sharp Corp | Production of mos semiconductor device |
| JPS59224164A (en) * | 1983-06-03 | 1984-12-17 | Hitachi Ltd | Electrostatic-breakdown preventing circuit |
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