JPS63159289A - 液相エピタキシヤル成長方法及び成長装置 - Google Patents
液相エピタキシヤル成長方法及び成長装置Info
- Publication number
- JPS63159289A JPS63159289A JP30711486A JP30711486A JPS63159289A JP S63159289 A JPS63159289 A JP S63159289A JP 30711486 A JP30711486 A JP 30711486A JP 30711486 A JP30711486 A JP 30711486A JP S63159289 A JPS63159289 A JP S63159289A
- Authority
- JP
- Japan
- Prior art keywords
- solution
- epitaxial growth
- liquid phase
- phase epitaxial
- substrate holder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007791 liquid phase Substances 0.000 title claims abstract description 45
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 238000003860 storage Methods 0.000 claims abstract description 25
- 238000009423 ventilation Methods 0.000 claims abstract description 13
- 239000012535 impurity Substances 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims description 11
- 239000007789 gas Substances 0.000 description 29
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000009776 industrial production Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 210000000078 claw Anatomy 0.000 description 1
- 238000010411 cooking Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP30711486A JPS63159289A (ja) | 1986-12-23 | 1986-12-23 | 液相エピタキシヤル成長方法及び成長装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP30711486A JPS63159289A (ja) | 1986-12-23 | 1986-12-23 | 液相エピタキシヤル成長方法及び成長装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS63159289A true JPS63159289A (ja) | 1988-07-02 |
JPH0580439B2 JPH0580439B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-11-09 |
Family
ID=17965198
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP30711486A Granted JPS63159289A (ja) | 1986-12-23 | 1986-12-23 | 液相エピタキシヤル成長方法及び成長装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63159289A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5922126A (en) * | 1996-05-31 | 1999-07-13 | Kabushiki Kaisha Toshiba | Semiconductor liquid phase epitaxial growth method and apparatus, and its wafer holder |
JP2010180085A (ja) * | 2009-02-04 | 2010-08-19 | Ihi Corp | 基板ホルダ |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53139970A (en) * | 1977-05-13 | 1978-12-06 | Sanyo Electric Co Ltd | Liquid phase epitaxial growth method of gaas crystal |
JPS59189621A (ja) * | 1983-04-12 | 1984-10-27 | Sharp Corp | 液相エピタキシヤル成長装置 |
-
1986
- 1986-12-23 JP JP30711486A patent/JPS63159289A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53139970A (en) * | 1977-05-13 | 1978-12-06 | Sanyo Electric Co Ltd | Liquid phase epitaxial growth method of gaas crystal |
JPS59189621A (ja) * | 1983-04-12 | 1984-10-27 | Sharp Corp | 液相エピタキシヤル成長装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5922126A (en) * | 1996-05-31 | 1999-07-13 | Kabushiki Kaisha Toshiba | Semiconductor liquid phase epitaxial growth method and apparatus, and its wafer holder |
JP2010180085A (ja) * | 2009-02-04 | 2010-08-19 | Ihi Corp | 基板ホルダ |
Also Published As
Publication number | Publication date |
---|---|
JPH0580439B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-11-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US3665888A (en) | Horizontal liquid phase crystal growth apparatus | |
CN111304738A (zh) | 熔融盐辅助化学气相沉积生长多层二硒化钨单晶的方法 | |
US3627499A (en) | Method of manufacturing a crystalline compound | |
KR102107626B1 (ko) | 탄화규소 단결정 성장 장치 및 탄화규소 단결정 성장 방법 | |
US3615878A (en) | Process for the thermal treatment of a semiconductor material having a volatile component | |
JPS63159289A (ja) | 液相エピタキシヤル成長方法及び成長装置 | |
US2446403A (en) | Process and apparatus for the vacuum production of magnesium | |
US3340009A (en) | Method of producing crystalline boron phosphide | |
US4347097A (en) | Method and apparatus for producing a multilayer semiconductor device utilizing liquid growth | |
US3556732A (en) | Apparatus for the thermal treatment of a semiconductor material having a volatile component | |
JPH0458434B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
JP2004327534A (ja) | 有機金属原料気相成長装置 | |
JPS5855119B2 (ja) | マグネシアスピネルの気相成長法及び装置 | |
JPH04202091A (ja) | 化合物半導体の気相成長装置 | |
JPS61158890A (ja) | 結晶成長装置 | |
JPS58191423A (ja) | 3−5半導体気相成長装置 | |
JPH03193697A (ja) | 気相エピタキシャル成長装置 | |
JP2719282B2 (ja) | 低温用クヌ−ドセンセル | |
US3039857A (en) | Apparatus for growing pure crystals | |
JPS63159290A (ja) | 液相エピタキシャル成長方法 | |
JPH0339040B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
JPS63248797A (ja) | 気相エピタキシヤル成長装置 | |
JPS6335600B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
JPS59121827A (ja) | 高周波加熱膜製造装置 | |
SU1726572A1 (ru) | Устройство дл получени пленок |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |