JPS6315717B2 - - Google Patents
Info
- Publication number
- JPS6315717B2 JPS6315717B2 JP59112000A JP11200084A JPS6315717B2 JP S6315717 B2 JPS6315717 B2 JP S6315717B2 JP 59112000 A JP59112000 A JP 59112000A JP 11200084 A JP11200084 A JP 11200084A JP S6315717 B2 JPS6315717 B2 JP S6315717B2
- Authority
- JP
- Japan
- Prior art keywords
- emitting layer
- light
- light emitting
- layer
- metal oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910044991 metal oxide Inorganic materials 0.000 claims description 16
- 150000004706 metal oxides Chemical class 0.000 claims description 16
- 150000004703 alkoxides Chemical class 0.000 claims description 13
- 239000000243 solution Substances 0.000 description 11
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 9
- 239000000758 substrate Substances 0.000 description 6
- 239000000499 gel Substances 0.000 description 5
- 229910052748 manganese Inorganic materials 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- -1 silicon alkoxide Chemical class 0.000 description 4
- 238000007738 vacuum evaporation Methods 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 229910052711 selenium Inorganic materials 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910052771 Terbium Inorganic materials 0.000 description 2
- 239000013543 active substance Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 108010025899 gelatin film Proteins 0.000 description 2
- 238000005470 impregnation Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- 125000003158 alcohol group Chemical group 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 150000008282 halocarbons Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910003455 mixed metal oxide Inorganic materials 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000012047 saturated solution Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59112000A JPS60254594A (ja) | 1984-05-31 | 1984-05-31 | エレクトロルミネツセンス素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59112000A JPS60254594A (ja) | 1984-05-31 | 1984-05-31 | エレクトロルミネツセンス素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60254594A JPS60254594A (ja) | 1985-12-16 |
| JPS6315717B2 true JPS6315717B2 (cs) | 1988-04-06 |
Family
ID=14575439
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59112000A Granted JPS60254594A (ja) | 1984-05-31 | 1984-05-31 | エレクトロルミネツセンス素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60254594A (cs) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0364873U (cs) * | 1989-10-30 | 1991-06-25 |
-
1984
- 1984-05-31 JP JP59112000A patent/JPS60254594A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0364873U (cs) * | 1989-10-30 | 1991-06-25 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60254594A (ja) | 1985-12-16 |
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