JPS63149603A - Method for forming diffration grating - Google Patents
Method for forming diffration gratingInfo
- Publication number
- JPS63149603A JPS63149603A JP29656886A JP29656886A JPS63149603A JP S63149603 A JPS63149603 A JP S63149603A JP 29656886 A JP29656886 A JP 29656886A JP 29656886 A JP29656886 A JP 29656886A JP S63149603 A JPS63149603 A JP S63149603A
- Authority
- JP
- Japan
- Prior art keywords
- film
- resist
- material film
- diffraction grating
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000005530 etching Methods 0.000 claims abstract description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 20
- 230000003287 optical effect Effects 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 3
- 238000010884 ion-beam technique Methods 0.000 abstract description 5
- 239000002245 particle Substances 0.000 abstract description 4
- 239000000126 substance Substances 0.000 abstract 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract 2
- 230000005540 biological transmission Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 20
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000003631 wet chemical etching Methods 0.000 description 2
- 235000017166 Bambusa arundinacea Nutrition 0.000 description 1
- 235000017491 Bambusa tulda Nutrition 0.000 description 1
- 241001330002 Bambuseae Species 0.000 description 1
- 235000015334 Phyllostachys viridis Nutrition 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000011425 bamboo Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005305 interferometry Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔発明の目的〕
（産業上の利用分野）
本発明は光導波路素子に用いて有利な微細な回折格子の
形成方法に関す。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Field of Industrial Application) The present invention relates to a method for forming a fine diffraction grating that is advantageous for use in optical waveguide devices.
（従来の技術）
従来、微細回折格子パターンを形成する手法として電子
線直接描画法が知られているが、０，７〜０．２μｍの
パターンを得るのは甚だ困難であった。又、Ｘ線、ＳＯ
Ｒ等もあるが、マスクは電子線描画に依る為に限界は直
接描画と同じである。(Prior Art) Conventionally, an electron beam direct writing method has been known as a method for forming a fine diffraction grating pattern, but it has been extremely difficult to obtain a pattern of 0.7 to 0.2 μm. Also, X-ray, SO
There are also R, etc., but since the mask relies on electron beam lithography, the limits are the same as direct lithography.
一方、０．１〜０．２μｍ程度の微細模様を実現する他
の方法として干渉露光法がある。この方法では、導波路
に重畳して、著しくは隣接して微小な格子領域を選択的
に形成する事が要せられる為に、予め所定の格子領域に
のみレジストを残すことが必要となる。On the other hand, there is interference exposure method as another method for realizing fine patterns of about 0.1 to 0.2 μm. In this method, since it is necessary to selectively form a minute grating region superimposed on, or even adjacent to, the waveguide, it is necessary to leave the resist only in predetermined grating regions in advance.
格子領域のみならず、余の所にもレジストを残した場合
は、格子パターンが全面に形成されることになり不具合
である。If the resist is left not only in the grating area but also in the remaining areas, a grating pattern will be formed over the entire surface, which is a problem.
然るに微細回折格子模様をレジストから誘電体に転写す
るにはイオン等の粒子線を用いることが要せられ、この
とき導波路表面若しくは導波路層の配置さるべきバッフ
ァ層表面に粒子線を照射する事になる。この工程を通っ
て形成した導波路の伝搬損失は照射しない場合の１．５
〜２倍になり不都合である。However, in order to transfer a fine diffraction grating pattern from a resist to a dielectric material, it is necessary to use a particle beam such as ions, and at this time, the particle beam is irradiated onto the waveguide surface or the buffer layer surface where the waveguide layer is to be placed. It's going to happen. The propagation loss of the waveguide formed through this process is 1.5 compared to the case without irradiation.
This is inconvenient as it becomes twice as large.
尚、湿式化学蝕刻では微細パターンを転写する事が甚だ
困難である。即ち、化学蝕刻に於ては等方性エツチング
となり、０．２μｍ周期のとき、３００八程度の深さが
限度であり、凸部と凹部の比も１：５程度となり、且つ
形状も矩形ではなくなり回折効率を大幅に減じ極めて不
都合である。Note that it is extremely difficult to transfer fine patterns using wet chemical etching. In other words, chemical etching results in isotropic etching, and when the period is 0.2 μm, the depth is limited to about 3008, the ratio of convex parts to concave parts is about 1:5, and the shape is not rectangular. This is extremely inconvenient as it greatly reduces the diffraction efficiency.
更にこのとき、レジストと被蝕刻領域の接触面積も穐め
て小さく剥れ等が生じ歩留りの点でも不具合である。斯
くの如く、湿式化学蝕刻では微細格子を所望深さ安定し
て加工する事は甚だ困難であった。Furthermore, at this time, the contact area between the resist and the area to be etched becomes very small and peeling occurs, which is a problem in terms of yield. As described above, it is extremely difficult to stably process fine gratings to a desired depth using wet chemical etching.
（発明が解決しようとする問題点）
本発明の目的は、上記従来技術の欠点に鑑みなされたも
のであり、光導波路伝搬損失を増大させる事なく微細回
折格子を実現することにある。(Problems to be Solved by the Invention) The object of the present invention has been made in view of the above-mentioned drawbacks of the prior art, and is to realize a fine diffraction grating without increasing optical waveguide propagation loss.
（問題点を解決する為の手段）
上記目的を達成する為に、本発明による微細回折格子の
形成方法を以下に示す。(Means for Solving the Problems) In order to achieve the above object, a method for forming a fine diffraction grating according to the present invention will be described below.
干渉露光法を用い、光導波路に重畳し或は光導波路に隣
接して回折格子を形成するに際し、回折格子形成領域に
有機膜を配置し、それ以外の領域に金属膜等の第１の物
質膜を設け、リフトオフ法により格子部を開口した後筒
２の物質膜を全体上に被着し、レジスト塗布後干渉露光
法によりパターン形成し、エツチングした後、レジスト
、第１の物質膜を除去して所望の格子を得た後、これに
隣接若しくは重畳して光導波路を設ける。When forming a diffraction grating superimposed on or adjacent to an optical waveguide using an interference exposure method, an organic film is placed in the diffraction grating formation area, and a first material such as a metal film is placed in the other area. After forming the film and opening the lattice portion using the lift-off method, the material film of cylinder 2 is applied over the entire surface, and after applying a resist, a pattern is formed using the interference exposure method, and after etching, the resist and the first material film are removed. After obtaining the desired grating, an optical waveguide is provided adjacent to or overlapping the grating.
（作用）
この方法に於ては、必要な格子部以外を物質膜で覆うの
で、粒子線等によるエツチングの際、導波路若しくは導
波路が接触するバッファ層表面を傷つけることがない。(Function) In this method, since parts other than the necessary lattice parts are covered with a material film, the waveguide or the surface of the buffer layer with which the waveguide comes into contact is not damaged during etching with a particle beam or the like.
（実施例）
本発明による微細回折格子の形成方法の一実施例を第１
図を参照して説明する。第１図は本発明による工程を試
料断面により示したものである。(Example) A first example of the method for forming a fine diffraction grating according to the present invention will be described below.
This will be explained with reference to the figures. FIG. 1 shows the process according to the present invention using a cross section of a sample.
＠１図（ａ）はＩｎＰ基板１上にスパッタリング或はＣ
ＶＤ法により酸化珪素膜２を３〜４μ被着した後、回折
格子部となる領域に有機膜としてレジスト３を配置し、
その全体上に第１の物質膜としてアルミニウム（Ａｌ）
膜４を真空蒸着法により、０．２μ被着した状態を示す
。第１図（ｂ）はり７トオフ法によりレジスト３を除去
した状態を示し、その上に第２の物質膜としてＴｉ０．
３００Ａ５を絖いてレジスト６を配置した状態を第１図
（Ｑに示す。@1 Figure (a) shows sputtering or C on InP substrate 1.
After depositing a silicon oxide film 2 of 3 to 4 μm by the VD method, a resist 3 is placed as an organic film in the region that will become the diffraction grating portion,
Aluminum (Al) is used as a first material film on the entire surface.
The state in which the film 4 is deposited to a thickness of 0.2μ by vacuum evaporation is shown. FIG. 1(b) shows a state in which the resist 3 has been removed by the beam 7-off method, and a second material film of Ti0.
300A5 and the resist 6 is placed is shown in FIG. 1 (Q).
ここでＨｅ−Ｃｄレーザの二光束干渉法を用い、０．２
〜０．３μ周期の微細回折格子模様を形成し、Ａｒイオ
ンビーム７を照射しＴｉｅ、を蝕刻する（第１図（ｄ）
）。このとき、Ａｒイオンは格子部以外を照射する事は
ない。レジストを除去した後、Ａｌ膜４を希弗酸で除去
すると、第１図（ｅ）に示す如く格子部８が残る。（ｆ
）に示す如く、導波路９を格子部８に隣接して工程を終
える。Here, using the He-Cd laser two-beam interferometry, 0.2
A fine diffraction grating pattern with a period of ~0.3μ is formed, and the Tie is etched by irradiation with an Ar ion beam 7 (Fig. 1(d)).
). At this time, Ar ions do not irradiate areas other than the lattice portion. After removing the resist, the Al film 4 is removed with dilute hydrofluoric acid, leaving a lattice portion 8 as shown in FIG. 1(e). (f
), the process is completed by placing the waveguide 9 adjacent to the grating section 8.
この実施例では、基板としてＩｎＰを用いたが、珪素、
ＬｉＮｂ０１石英専特に制限はなく、又熱酸化膜を配置
した珪素基板のような構成でも可である。また基板上の
１９［Ｂとして酸化珪素膜の他に窒化珪素、アルミナ、
或はガラス等でも勿論良い。In this example, InP was used as the substrate, but silicon,
LiNb01 quartz is not particularly limited, and a structure such as a silicon substrate on which a thermal oxide film is arranged is also possible. In addition to the silicon oxide film, silicon nitride, alumina,
Alternatively, glass or the like may of course be used.
有機膜としてはポリイシド等でも可である。The organic film may also be made of polyamide or the like.
第１の物質膜と第２の物質膜としてはＡ ｌ 、！＝Ｔ
ｉＯ。As the first material film and the second material film, A l,! =T
iO.
の他ＴｉとＴｉｏ、、ｌ！とＴ ｉ Ｏ，等基板との組
合せも考慮して定める事ができる。ドライエツチングの
手法としてＡｒイオンビーム照射を用いたが、反応性イ
オンエツチング、反応性イオンビームエツチング°、化
学増速式反応性イオンビームエツチング等でも構わない
。Besides Ti and Tio,,l! It can be determined by considering the combination of substrates such as and T i O. Although Ar ion beam irradiation was used as the dry etching method, reactive ion etching, reactive ion beam etching, chemically enhanced reactive ion beam etching, etc. may also be used.
更に、導波路として三次元導波路を用いたが、二次元導
波路でも良゛＜、格子部は導波路の上側でも良い。Further, although a three-dimensional waveguide is used as the waveguide, a two-dimensional waveguide may also be used. The grating portion may be placed above the waveguide.
本発明を用いる事により、極めて微細な回折格子を、こ
れと隣接若しくは重畳する光導波路の伝搬損失を増大さ
せる事なく実現できる。By using the present invention, an extremely fine diffraction grating can be realized without increasing the propagation loss of the optical waveguide adjacent to or overlapping with the diffraction grating.
第１図は本発明による工程の試料断面図である。 １・・・基板 ２・・・基板上の薄膜 ３・・・有機膜 ４・・・第１の物質膜 ５・・・第２の物質膜 ６・・・レジスト ７・・・微細回折格子 ８・・・導波路 代理人 弁理士 則 近 憲 佑 同 竹 花 喜久男 第１図 FIG. 1 is a cross-sectional view of a sample in a process according to the present invention. 1... Board 2... Thin film on the substrate 3...Organic film 4...first material film 5...Second material film 6...Resist 7...Fine diffraction grating 8... Waveguide Agent: Patent Attorney Noriyuki Chika Same Bamboo Flower Kikuo Figure 1
Claims (3)
路に隣接して回折格子を形成するに際し、基板上に所定
模様の有機膜を載置し、この有機膜の上に前記基板とは
異なる蝕刻速度を持つ第１の物質膜を被着し、リフトオ
フ法により前記有機膜をその上の第１の物質膜と共に少
なくとも一部分除去し、前記第１の物質膜上及び前記基
板上に前記第１の物質膜と異なる蝕刻速度を持つ第２の
物質膜を被着しレジストを塗布した後、干渉露光法によ
り所定の回折格子模様を形成し、前記第２の物質膜を蝕
刻した後、前記レジスト並びに第１の物質膜を除去し残
置する第２の物質膜領域に重畳する若しくは隣接する光
導波路を形成する事を特徴とする回折格子の形成方法。(1) When forming a diffraction grating superimposed on or adjacent to an optical waveguide using interference exposure, an organic film with a predetermined pattern is placed on a substrate, and the substrate is placed on top of this organic film. depositing a first material film having an etching rate different from that of the first material film, removing at least a portion of the organic film together with the first material film thereon by a lift-off method, and depositing a first material film on the first material film and the substrate. A second material film having an etching speed different from that of the first material film is deposited, a resist is applied, a predetermined diffraction grating pattern is formed by an interference exposure method, and the second material film is etched. . A method for forming a diffraction grating, which comprises removing the resist and the first material film and forming an optical waveguide that overlaps or is adjacent to a second material film region that remains.
請求の範囲第１項記載の回折格子の形成方法。(2) The method for forming a diffraction grating according to claim 1, wherein the substrate is an InP substrate.
のであることを特徴とする特許請求の範囲第１項記載の
回折格子の形成方法。(3) The method for forming a diffraction grating according to claim 1, wherein the substrate is an InP substrate with a silicon oxide film formed thereon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29656886A JPS63149603A (en) | 1986-12-15 | 1986-12-15 | Method for forming diffration grating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29656886A JPS63149603A (en) | 1986-12-15 | 1986-12-15 | Method for forming diffration grating |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63149603A true JPS63149603A (en) | 1988-06-22 |
Family
ID=17835225
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29656886A Pending JPS63149603A (en) | 1986-12-15 | 1986-12-15 | Method for forming diffration grating |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63149603A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0490320A2 (en) * | 1990-12-10 | 1992-06-17 | Canon Kabushiki Kaisha | A method for producing a diffraction grating |
| US7159304B2 (en) * | 2000-11-28 | 2007-01-09 | Hitachi Global Storage Technologies Japan, Ltd. | Method of manufacturing a spin-valve giant magnetoresistive head |
-
1986
- 1986-12-15 JP JP29656886A patent/JPS63149603A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0490320A2 (en) * | 1990-12-10 | 1992-06-17 | Canon Kabushiki Kaisha | A method for producing a diffraction grating |
| US7159304B2 (en) * | 2000-11-28 | 2007-01-09 | Hitachi Global Storage Technologies Japan, Ltd. | Method of manufacturing a spin-valve giant magnetoresistive head |
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