JPS63147379A - Manufacture of end-face light-emitting diode - Google Patents

Abstract

PURPOSE:To produce an end-face light-emitting diode with its characteristics not degraded during an embedment/growth process, excellent in light-emitting feature, and high in yield by a method wherein a semiconductor layer including an active layer is formed on a first stripe-geometry groove and a semiconductor layer capable of transmitting light from the active layer is formed on a second stripe-geometry groove crossing the first stripe-geometry groove. CONSTITUTION:A current blocking layer 2 is formed on a semiconductor substrate 1 and, penetrating through the current blocking layer 2, a first stripe-geometry groove 3 is provided, to reach the semiconductor substrate 1. On the stripe-geometry groove 3, a buffer layer 4, active layer 5, clad layer 6, and contact layer 7 are formed, in that order. Next, a second stripe-geometry groove 8 is provided, to reach the buffer layer 1 and crossing the first stripe-geometry groove 3. A semiconductor layer 12 is then formed on the stripe-geometry groove 8, capable of transmitting the light from the active layer 5. Then, electrodes 13 and 11 are built respectively on the contact layer 7 and substrate 1. An end face to cross the stripe-geometry 3 is formed at a part of the stripe-geometry groove 3, and the other end face at a part of the stripe- geometry groove 8, both by cleaving, for the formation of a chip. The light-emitting end of the two end faces is provided with a non-reflective film 16.

Description

DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to an edge light emitting diode, and more particularly, to a method for manufacturing an edge light emitting diode used as a light source in processing, data processing, etc.

(Prior technology) A surface-emitting diode that uses stimulated emission light has a high output, and is particularly suitable for single-mode fibers that suppress laser excavation by forming an anti-reflection film on the end face of a buried semiconductor laser. It has the advantage that the output of the join source to is large. However, this edge-emitting diode has the drawback of emitting laser light when operated at high currents or at low temperatures.

One way to obtain an edge-detecting diode that has high output and is difficult to oscillate at low temperatures is to place an original transparent semiconductor device between the light-emitting region and the reflective surface. In addition, the light that enters the original transparent semiconductor layer from the light emitting region spreads there, is reflected by the reflective surface, and enters the light emitting region of the casing, but as the light spreads, the original proportion that returns to the light emitting region decreases, that is, the original The presence of a transparent semiconductor reduces the effective reflectance, which makes it easier to suppress laser excavation. The effective reflectance of the edge-emitting diode in the housing is 10.
Since it is inserted by about 20%, sufficient light output can be obtained for practical use.

An example of this method is the ``1986 Institute of Electronics and Communication Engineers, Former
This is explained in ``Preliminary Lecture Results of the Radio Division National Conference 210''. In this manufacturing method, a bale with a Y-shaped cross section, a hole of 5 to 10 μm in width and 200 μm in length is formed on a cow cotton substrate, and a light-emitting region is formed in the hole by buried growth. .

(Problems to be Solved by the Invention) In the conventional method for manufacturing edge-emitting diodes described above, a multilayer semiconductor layer including a liquid-phase grown angular layer is formed in the hole, but at this time, the growth solution flows into the hole. If it remains in the solution, it will mix with the next growth solution, and the crystallinity of the growing pigeons will deteriorate. Therefore, the occurrence i%
The drawbacks were that the properties deteriorated and the yield decreased.

SUMMARY OF THE INVENTION An object of the present invention is to provide a method for manufacturing an edge light emitting diode with good detection characteristics and high yield, which eliminates these drawbacks.

(Means for Solving the Problems) The method for manufacturing an edge light emitting diode of the present invention includes a step of forming a 'fJL flow blocking layer on a semiconductor substrate, and a step of penetrating this current blocking layer and reaching the semiconductor substrate. a step of forming a first strike-shaped groove, a step of forming a next buffer layer, an active layer, a cladding layer, and a contact layer on the first strike-shaped groove; a step of forming a second stripe-like groove that intersects with the stripe-like groove; and a step of forming a light-transparent conductor layer from the active layer () on the second strike-like groove. and forming electrodes on the contact layer and the semiconductor substrate, respectively, and forming an end face intersecting the direction of the first striped groove, one of which is a part of the first striped groove, On the other hand, the present invention is characterized by comprising a step of forming a chip by cleaving each of the second striped grooves, and a step of forming a non-reflection film on the light exit side of the end face.

(Function) In the configuration of the present invention, the first
A semiconductor layer including an active layer is formed on the striped grooves, a second striped groove intersecting with the first striped groove is completely formed, and light from the active layer is formed on the groove. forms a transparent semiconductor layer. In other words, the filling growth of the striped grooves formed on the wafer is 2[i;! A desired structure is formed by one row. The filling growth of these striped grooves is easy, the crystallinity is good, the yield is good, and even if 21g is carried out once, there is no deterioration of the characteristics.

Therefore, there is no deterioration of crystallinity during buried growth, and the yield is the same as above.

(Example) Next, non-invention will be explained with reference to the drawings.

FIG. 1 is a perspective view of an edge light emitting diode for explaining one embodiment of the present invention, and FIG. A method of manufacturing a nine-edge detection diode using InP/1nGaAsPi as the material is shown.

On a P-type lnP semiconductor substrate 1 with plane orientation (100), a layer thickness of 1 μm and a carrier density of about 1×10
An n-type 1nP current block N2 of cm2 is formed.

Next, a first striped groove 3'ft8i (Jz't mask) in the (011) direction reaching the semiconductor substrate 1 is formed.
A mixed solution of 1, H, and 1'04 is used as an etching solution. The cross section of the groove is V-shaped, and the depth and width of the groove are 1.5 μm and 3 μm, respectively. The mask 8102 is removed, resulting in the image shown in FIG. 2(a).

Next, using a crystal growth method, a p-type lnP buffer layer 4 and an InGaAs layer are sequentially formed on this first stripe-shaped groove 3.
P active layer 5, n-type 1nP cladding layer 6n-type 1nGa
An AsP contact layer 7 is formed to have the shape shown in FIG. 2(b). The layer thickness is 5μm and 10.15μ at the groove part.
m, 1.5 μm, and 1 μm. The carrier density is 1 x 101, /7 doped, 013 CIIL, 2x10 cm. The wavelength corresponding to the band gap of the active layer 5 and the contact layer 7 is L3μm% 1.15μm, respectively.

Next, it intersects with the first stripe-like 143 (011
) direction of the second stripe v reaching the buffer layer 4
#8fSi (formed on J2 using a mixture of HCl and island P04 as an etching solution as a mask.This groove 8
The depth of and @ are approximately 3.5 μm, respectively.

At 400 μm, the cross-sectional shape is an inverted trapezoid. After completely removing the mask of 5i02, the result is as shown in FIG. 2(C). Next, by crystal growth method, n-type 1nP 9. n-type 1nP 10,p
InP molds 11 are successively formed, resulting in the structure shown in FIG. 2(d).

The thickness of the growth layer in this #I#8 portion is 0.5μ, respectively.
m0.5μm, λ5μm, carrier Fumin is 5X each
IO”(In, IXIQ CTL, 5XIQ
It is CIIL. This p-type InP9, n-type 1nP1
The semiconductor layer 12 is transparent to light from the 0 and p-type 1nP11tl active layers. Conductivity type of this layer: kp type, n type, p type
The current scissors 9 used here are used to eliminate leakage current.

Next, an n-type electrode 1FIA13k is formed on the contact layer 7, a p-type electrode 14 is formed on the semiconductor substrate 1, and furthermore, one part of the first striped groove 3 and the other part of the second striped groove 8 are formed. Separate each part and form a chip.
The length of the striped groove 3 in the light emitting region 15 is approximately 1
A portion of the second stripe-shaped groove 10 is a semiconductor layer 12 that is transparent to light from the active layer of the light emitting region 15, and has a length of about 150 μm.

Next, on the end surface of the first stripe-shaped groove 3, a groove of about 1
A non-reflective film 16 of silicon nitride film of 80 nm is formed as a light emitting surface, and an edge light emitting diode shown in FIG. 1 can be fabricated.

In this example, a semiconductor included in the active layer 715 is formed on the first striped groove 3 formed on the semiconductor substrate 1, and then a second semiconductor is formed on the semiconductor substrate 1 and included in the active layer 715, which is perpendicular to the first striped groove 3.
A stripe-shaped groove 8 is formed, and a semiconductor layer 12 that is transparent to light from active/i# is entirely formed thereon. In this method, all 2 of the T-striped grooves formed on the wafer are buried.
The desired structure is formed by turning. The filling growth of striped grooves is easy and there is no deterioration in the characteristics.Therefore, the deterioration in characteristics caused by conventional crystal growth is eliminated and the yield is improved.

In this example, the lengths of the light emitting region 15 and the semiconductor layer 12 through which light from the active layer is transparent are each about 150 μm, but depending on the desired characteristics of the edge-emitting diode, the lengths may be 100 to 300 pm, 50 to 50 μm, respectively. Optimization is possible within the range of 200 Am. Furthermore, p-type and n-type may be exchanged. Furthermore, the semiconductor materials f, InP, and 1nGaAsP are
Combinations of other semiconductor materials such as lGaAs and GaAs can also be applied.

(Effects of the Invention) As explained above, the present invention embeds striped grooves during crystal growth in the manufacturing process, so it can be easily manufactured, there is no deterioration of characteristics during this buried growth, and the yield is low. can be improved. The end-face detection diode produced by this fabrication has sufficient original power, and at the same time, laser excavation can be easily suppressed.

[Brief explanation of the drawing]

Fig. 1 is a perspective view of an edge light emitting diode for fully explaining an example of the present invention, and Figs. ... Semiconductor substrate, 2... Current blocking layer, 3...
・First striped groove, 4... buffer layer, 5.
...active layer, 6... cladding layer, 7... contact layer, 8... second stripe-shaped groove, 9... n-type 1
nP, 10...n-type LnP, 11...n-type 1nP
, 12... Semiconductor layer in which the part from the active layer is transparent, 13.
... n-type electrode, 14 ... p-type electrode, 15 ... light emitting region, 16 ... non-reflection film.

Claims (1)

[Claims] forming a current blocking layer on a semiconductor substrate; forming a first striped groove that penetrates the current blocking layer and reaching the semiconductor substrate; and sequentially forming a first striped groove on the first striped groove. a step of forming a buffer layer, an active layer, a cladding layer, and a contact layer; a step of forming a second stripe-shaped groove that reaches the buffer layer and intersects the first stripe-shaped groove; forming a semiconductor layer that is transparent to light from the active layer on the striped groove; forming electrodes on the contact layer and the semiconductor substrate; and forming the first striped groove on the first striped groove. forming a chip by forming end faces intersecting the direction by cleavage, one of which is a part of the first striped groove and the other part of the second striped groove; 1. A method for manufacturing an edge light emitting diode, comprising the step of forming a non-reflective film on the light emitting side of the edge surface.