JPS63146403A - Manufacture of ptc thermistor - Google Patents
Manufacture of ptc thermistorInfo
- Publication number
- JPS63146403A JPS63146403A JP61294053A JP29405386A JPS63146403A JP S63146403 A JPS63146403 A JP S63146403A JP 61294053 A JP61294053 A JP 61294053A JP 29405386 A JP29405386 A JP 29405386A JP S63146403 A JPS63146403 A JP S63146403A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- ptc thermistor
- mol
- present
- resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 5
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 4
- 229910002113 barium titanate Inorganic materials 0.000 claims description 4
- 238000010304 firing Methods 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 claims description 4
- 150000002697 manganese compounds Chemical class 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 238000001816 cooling Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 235000006693 Cassia laevigata Nutrition 0.000 description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 2
- 241000522641 Senna Species 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229940124513 senna glycoside Drugs 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- AYJRCSIUFZENHW-DEQYMQKBSA-L barium(2+);oxomethanediolate Chemical compound [Ba+2].[O-][14C]([O-])=O AYJRCSIUFZENHW-DEQYMQKBSA-L 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- BDAGIHXWWSANSR-NJFSPNSNSA-N hydroxyformaldehyde Chemical compound O[14CH]=O BDAGIHXWWSANSR-NJFSPNSNSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 229910000018 strontium carbonate Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Thermistors And Varistors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
産業上の利用分野
本発明はセラミック半導体材料の一種で、温度が上昇す
ると抵抗値が増加する（正の抵抗温度係数をもつ）性質
を有したチタン酸バリウムとチタン酸ストロンチウムを
主成分とするＰＴＣサーミスタの製造方法に関するもの
である。[Detailed Description of the Invention] Industrial Application Field The present invention is a type of ceramic semiconductor material made of barium titanate and titanate, which have the property of increasing resistance (having a positive temperature coefficient of resistance) as the temperature rises. The present invention relates to a method for manufacturing a PTC thermistor containing strontium as a main component.
従来の技術
ＰＴＣサーミスタには抵抗温度係数が１０％／Ｃを越え
、主に限流素子、ヒータなどに用いられるものと、抵抗
温度係数が１０％／℃以下で温度センナとして用いられ
るものとがある。後者のＰＴＣサーミスタはキュリ一温
度を常温以下の低温にずらし、抵抗値が温度に対してほ
ぼ一定に増加する領域を使用したものである。従って、
ＰＴＣサーミスタとしての温度係数が負から正に変化す
る温度（キュリ一温度近辺であり、以下Ｔｃ温度と略記
する）及びＴｃ温度より高温側で温度係数が正から負に
変化する温度Ｃ以下ピーク温度あるいはＴｐ温度と略記
する）の２点があり、センサとして用いるためにはＴｃ
温度とＴｐ温度間で使用しなければならない。Conventional PTC thermistors have a temperature coefficient of resistance of more than 10%/°C and are mainly used as current limiting elements and heaters, while others have a temperature coefficient of resistance of 10%/°C or less and are used as temperature sensors. be. The latter PTC thermistor uses a region in which the Curie temperature is shifted to a low temperature below room temperature and the resistance value increases almost constantly with temperature. Therefore,
The temperature at which the temperature coefficient as a PTC thermistor changes from negative to positive (near the Curie temperature, hereinafter abbreviated as Tc temperature), and the temperature below C where the temperature coefficient changes from positive to negative on the higher temperature side than Tc temperature.Peak temperature (also abbreviated as Tp temperature), and in order to use it as a sensor, Tc
and Tp temperature.
発明が解決しようとする問題点
従来、このようなセンサ用のＰＴＣサーミスタは、抵抗
温度係数が２〜６に７℃でＴｃ温度はほぼ一３０℃付近
、Ｔｐ温度はは＃’！’ ２００℃であり。Problems to be Solved by the Invention Conventionally, PTC thermistors for such sensors have a temperature coefficient of resistance of 2 to 6 to 7 degrees Celsius, a Tc temperature of about -30 degrees Celsius, and a Tp temperature of ! 'It's 200℃.
センナとして使用可能な温度範囲は−２０”Ｃから８０
℃程度であった。ここで、センサとしての使用温度範囲
を拡充するために、チタン酸ストロンチウムを増加させ
ると、Ｔｃ温度を低温側にずらせば、同時にＴｐ湿温度
低温側にずれて、使用温度範囲が広くならないという問
題があった。The temperature range that can be used as senna is -20"C to 80"C.
It was about ℃. Here, in order to expand the usable temperature range as a sensor, if we increase strontium titanate, if we shift the Tc temperature to the lower temperature side, the Tp humidity temperature also shifts to the lower temperature side, and the problem is that the usable temperature range cannot be widened. was there.
本発明は上記の’ｒｅ温度とτｐ温度の間の温度領域を
広げ、センサとしての使用温度範囲を拡充するためのも
のである。The present invention is intended to expand the temperature range between the above-mentioned 're temperature and τp temperature, and expand the usable temperature range as a sensor.
問題点を解決するだめの手段
この問題点を解決するために本発明のＰＴＣサーミスタ
の製造方法は、チタン酸バリウム、チタン酸ストロンチ
ウム、二酸化ケイ素、半導体化元素を含むＰＴＣ組成物
でマンガン化合物をＭｎＯ□に換算して０．００１モル
以上０．０００５モル以下含む材料を焼成した後、毎時
３００℃以上の速度で降温するようにしたものである。Means for Solving the Problem In order to solve this problem, the method for manufacturing a PTC thermistor of the present invention includes a PTC composition containing barium titanate, strontium titanate, silicon dioxide, and a semiconductor element, in which a manganese compound is mixed with MnO. After firing a material containing 0.001 mol or more and 0.0005 mol or less in terms of □, the temperature is lowered at a rate of 300° C. or more per hour.
作用
本発明者は、上記のセンサとしての使用温度範囲を拡充
するための検討を、！’ＴＯサーミスタの添加物および
製造条件の種々の点から検討した結果、焼成後の冷却速
度（降温速度）を制御することにより抵抗温度係数を変
え得ることを見出し。The inventor of the present invention has conducted a study to expand the temperature range in which the above sensor can be used. 'After examining various aspects of TO thermistor additives and manufacturing conditions, we discovered that the temperature coefficient of resistance can be changed by controlling the cooling rate (temperature fall rate) after firing.
またマンガン添加によりＰＴＣサーミスタの抵抗変化幅
が大きくなることと合わせて本発明をなすに至ったもの
である。したがって１本発明の方法によれば、センサと
しての使用可能な温度範囲を拡張し得ることとなる。In addition, the addition of manganese increases the range of resistance change of the PTC thermistor, which led to the present invention. Therefore, according to the method of the present invention, the usable temperature range as a sensor can be expanded.
実施例 以下１本発明の実施例について説明する。Example An embodiment of the present invention will be described below.
まず、チタン酸バリウム６０モル％、チタン酸ストロン
チウム６０モル％となるように炭酸バリウム、炭酸スト
ロンチウム、酸化チタンを秤量し。First, barium carbonate, strontium carbonate, and titanium oxide were weighed so that barium titanate was 60 mol% and strontium titanate was 60 mol%.
これに適量（０，０１〜０．０５％ル）の二酸化ケイ素
、イツトリアなどの半導体化元素を適量（ｏ、ｏｏ１〜
０．００３モル）加え、さらに二酸化マンガンを加えた
組成物を通常の方法でボールミル混合し、得られた原料
を通常の方法で造粒しプレス成形した。Add an appropriate amount (0.01~0.05%) of semiconductor elements such as silicon dioxide and itria to this.
0.003 mol) and further manganese dioxide was mixed in a ball mill in a conventional manner, and the resulting raw material was granulated and press-molded in a conventional manner.
この成形体を１４００”Ｃで１時間焼成した後、種々の
冷却速度で降温した。その後この素体に通常の方法で銀
電極を形成し温度特性を測定した。マンガン添加量及び
冷却速度とキュリ一温度Ｔｃ。After firing this molded body at 1400"C for 1 hour, the temperature was lowered at various cooling rates. Thereafter, silver electrodes were formed on this body by the usual method, and the temperature characteristics were measured. The amount of manganese added, the cooling rate, and the temperature One temperature Tc.
ピーク温度Ｔｐの関係を表１及び図に示す。第１表中黒
１ 、７１ｉ２． ｒ亮１１Ｇ１ｏ及び図中点１は本発
明以外のものである。The relationship between peak temperature Tp is shown in Table 1 and the figure. Table 1 Nakaguro 1, 71i2. Ryo 11G1o and point 1 in the figure are other than the present invention.
ここで、マンガン化合物の量を０．０００１モル以上０
．０００５モル以下としたのは、００００１モル未満で
は添加量が少なく本発明の効果が得られず。Here, the amount of manganese compound is 0.0001 mol or more
．． The reason why the amount is set to be 0,005 mol or less is that if it is less than 00,001 mol, the amount added is too small and the effect of the present invention cannot be obtained.
ｏ、ｏｏｏｓモルを越えるとＴｐ湿温度低くなるためセ
ンサとしての使用温度範囲がせまくなる。If the value exceeds o, ooos mole, Tp humidity temperature becomes low and the usable temperature range as a sensor becomes narrow.
また降温速度が毎時３００ ℃未満では抵抗温度係数が
太きく Ｔｐ湿温度低くなり本発明の効果が得られない
。Further, if the temperature decreasing rate is less than 300° C./hour, the temperature coefficient of resistance becomes large and the Tp humidity temperature becomes low, making it impossible to obtain the effects of the present invention.
発明の効果
以上詳述したように、本発明によればキュリ一温度Ｔｏ
とピーク温度’ｒｐとの間の領域を広くし、センナとし
ての使用可能な温度範囲を拡張しうるものでありその利
用価値は大きい。Effects of the Invention As detailed above, according to the present invention, the Curie temperature To
It is possible to widen the region between the peak temperature 'rp and the temperature range that can be used as senna, and its utility value is great.
図は本発明の一実施例及び従来例の抵抗温度特性を示す
図である。The figure is a diagram showing resistance temperature characteristics of an embodiment of the present invention and a conventional example.
Claims (1)
ケイ素、半導体化元素を含むＰＴＣサーミスタ組成物で
マンガン化合物をＭｎＯ＿２に換算して０．０００１モ
ル以上０．００５モル以下含む材料を焼成した後、毎時
３００℃以上の速度で降温するようにしたＰＴＣサーミ
スタの製造方法。After firing a PTC thermistor composition containing barium titanate, strontium titanate, silicon dioxide, and a semiconductor element containing a manganese compound of 0.0001 mol or more and 0.005 mol or less in terms of MnO_2, the temperature is 300°C or more per hour. A method for manufacturing a PTC thermistor in which the temperature is lowered at a rate of .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61294053A JPS63146403A (en) | 1986-12-10 | 1986-12-10 | Manufacture of ptc thermistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61294053A JPS63146403A (en) | 1986-12-10 | 1986-12-10 | Manufacture of ptc thermistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63146403A true JPS63146403A (en) | 1988-06-18 |
Family
ID=17802669
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61294053A Pending JPS63146403A (en) | 1986-12-10 | 1986-12-10 | Manufacture of ptc thermistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63146403A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02290303A (en) * | 1989-02-28 | 1990-11-30 | Sumitomo Metal Ind Ltd | High frequency dielectric component and its manufacture |
| US6582647B1 (en) * | 1998-10-01 | 2003-06-24 | Littelfuse, Inc. | Method for heat treating PTC devices |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6186467A (en) * | 1984-10-02 | 1986-05-01 | 科学技術庁無機材質研究所長 | Manufacture of high effeciency barium titanate posister |
| JPS61294053A (en) * | 1985-06-20 | 1986-12-24 | 株式会社 日本パ−ツセンタ− | Block |
-
1986
- 1986-12-10 JP JP61294053A patent/JPS63146403A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6186467A (en) * | 1984-10-02 | 1986-05-01 | 科学技術庁無機材質研究所長 | Manufacture of high effeciency barium titanate posister |
| JPS61294053A (en) * | 1985-06-20 | 1986-12-24 | 株式会社 日本パ−ツセンタ− | Block |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02290303A (en) * | 1989-02-28 | 1990-11-30 | Sumitomo Metal Ind Ltd | High frequency dielectric component and its manufacture |
| US6582647B1 (en) * | 1998-10-01 | 2003-06-24 | Littelfuse, Inc. | Method for heat treating PTC devices |
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