JPS63145324U - - Google Patents
Info
- Publication number
- JPS63145324U JPS63145324U JP3883087U JP3883087U JPS63145324U JP S63145324 U JPS63145324 U JP S63145324U JP 3883087 U JP3883087 U JP 3883087U JP 3883087 U JP3883087 U JP 3883087U JP S63145324 U JPS63145324 U JP S63145324U
- Authority
- JP
- Japan
- Prior art keywords
- gas
- valve
- reaction
- exhaust
- closed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007789 gas Substances 0.000 claims 7
- 239000012495 reaction gas Substances 0.000 claims 5
- 238000000034 method Methods 0.000 claims 1
- 238000001947 vapour-phase growth Methods 0.000 claims 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
第１図は本考案にかかるＭＯＣＶＤ装置の概要
断面図、第２図は従来のＭＯＣＶＤ装置の概要断
面図である。
図において、１は反応チヤンバ、２，１２はガ
スノズル、３はウエハー、４はサセプタ、５は高
周波加熱コイル、６は排気口、７，８は原料ガス
供給口、９はガス導入管、１０は開閉弁（第１の
開閉弁）、１１は第２の開閉弁、１３は排ガス管
、を示している。
FIG. 1 is a schematic sectional view of an MOCVD apparatus according to the present invention, and FIG. 2 is a schematic sectional view of a conventional MOCVD apparatus. In the figure, 1 is a reaction chamber, 2 and 12 are gas nozzles, 3 is a wafer, 4 is a susceptor, 5 is a high-frequency heating coil, 6 is an exhaust port, 7 and 8 are source gas supply ports, 9 is a gas introduction pipe, and 10 is a Reference numeral 11 indicates an on-off valve (first on-off valve), 11 indicates a second on-off valve, and 13 indicates an exhaust gas pipe.
Claims (1)
ルを配設し、該ガスノズルに反応ガスを送入する
ガス導入管の中途に第１の開閉弁を具備せしめ、
前記ガスノズルの他端に排気系に接続した排ガス
管を連結して、該排ガス管の中途に第２の開閉弁
を具備せしめ、成長処理時には第２の開閉弁を閉
じて、第１の開閉弁を開いて反応チヤンバ内に反
応ガスを噴射せしめ、且つ、反応ガス切り換え時
には第１の開閉弁を閉じ、第２の開閉弁を開けて
急速に反応チヤンバ外に排気されるように構成し
たことを特徴とする気相成長装置。 A gas nozzle for injecting a reaction gas is arranged in the reaction chamber, and a first on-off valve is provided in the middle of a gas introduction pipe for feeding the reaction gas to the gas nozzle,
An exhaust gas pipe connected to an exhaust system is connected to the other end of the gas nozzle, and a second on-off valve is provided in the middle of the exhaust gas pipe, and during the growth process, the second on-off valve is closed and the first on-off valve is closed. The reaction gas is opened to inject the reaction gas into the reaction chamber, and when switching the reaction gas, the first on-off valve is closed and the second on-off valve is opened to rapidly exhaust the gas out of the reaction chamber. Characteristic vapor phase growth equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3883087U JPS63145324U (en) | 1987-03-16 | 1987-03-16 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3883087U JPS63145324U (en) | 1987-03-16 | 1987-03-16 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63145324U true JPS63145324U (en) | 1988-09-26 |
Family
ID=30851444
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3883087U Pending JPS63145324U (en) | 1987-03-16 | 1987-03-16 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63145324U (en) |
-
1987
- 1987-03-16 JP JP3883087U patent/JPS63145324U/ja active Pending
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