JPS6314460Y2 - - Google Patents
Info
- Publication number
- JPS6314460Y2 JPS6314460Y2 JP3878485U JP3878485U JPS6314460Y2 JP S6314460 Y2 JPS6314460 Y2 JP S6314460Y2 JP 3878485 U JP3878485 U JP 3878485U JP 3878485 U JP3878485 U JP 3878485U JP S6314460 Y2 JPS6314460 Y2 JP S6314460Y2
- Authority
- JP
- Japan
- Prior art keywords
- main electrode
- metal base
- semiconductor substrate
- electrode
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000002184 metal Substances 0.000 claims description 25
- 229910052751 metal Inorganic materials 0.000 claims description 25
- 239000004065 semiconductor Substances 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 19
- 230000002950 deficient Effects 0.000 claims description 6
- 230000002265 prevention Effects 0.000 claims description 6
- 230000013011 mating Effects 0.000 claims 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 9
- 230000007547 defect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- 230000003449 preventive effect Effects 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Landscapes
- Thyristors (AREA)
- Die Bonding (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3878485U JPS60163760U (ja) | 1985-03-20 | 1985-03-20 | 平型サイリスタ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3878485U JPS60163760U (ja) | 1985-03-20 | 1985-03-20 | 平型サイリスタ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60163760U JPS60163760U (ja) | 1985-10-30 |
| JPS6314460Y2 true JPS6314460Y2 (en:Method) | 1988-04-22 |
Family
ID=30546110
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3878485U Granted JPS60163760U (ja) | 1985-03-20 | 1985-03-20 | 平型サイリスタ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60163760U (en:Method) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA2339523A1 (en) * | 1998-08-07 | 2000-02-17 | Hitachi, Ltd. | Flat semiconductor device, method for manufacturing the same, and converter comprising the same |
-
1985
- 1985-03-20 JP JP3878485U patent/JPS60163760U/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60163760U (ja) | 1985-10-30 |
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