JPS63143569U - - Google Patents

Info

Publication number
JPS63143569U
JPS63143569U JP3546487U JP3546487U JPS63143569U JP S63143569 U JPS63143569 U JP S63143569U JP 3546487 U JP3546487 U JP 3546487U JP 3546487 U JP3546487 U JP 3546487U JP S63143569 U JPS63143569 U JP S63143569U
Authority
JP
Japan
Prior art keywords
ion gas
sputtering
chamber
generation section
gas generation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3546487U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP3546487U priority Critical patent/JPS63143569U/ja
Publication of JPS63143569U publication Critical patent/JPS63143569U/ja
Pending legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案によるクリーニング装置の一実
施例を示す要部模式図、第2図は従来のスパツタ
リング装置を示す模式図である。 2〜5:スパツタリングチヤンバ、7:トレイ
、8:ターゲツト、9:クリーニングチヤンバ、
10:イオンガス発生室。
FIG. 1 is a schematic diagram of essential parts of an embodiment of a cleaning device according to the present invention, and FIG. 2 is a schematic diagram of a conventional sputtering device. 2 to 5: sputtering chamber, 7: tray, 8: target, 9: cleaning chamber,
10: Ion gas generation chamber.

Claims (1)

【実用新案登録請求の範囲】 基板表面に薄膜をスパツタリングにより形成す
るチヤンバと、 該チヤンバにイオンガスを供給するイオンガス
発生部と、 上記イオンガス発生部で生成したイオンガスを
チヤンバ内に設置された基板表面に衝突させる加
速装置とを備えてなることを特徴とするスパツタ
リング装置。
[Scope of Claim for Utility Model Registration] A chamber for forming a thin film on the surface of a substrate by sputtering, an ion gas generation section for supplying ion gas to the chamber, and an ion gas generation section installed in the chamber for supplying the ion gas generated by the ion gas generation section. A sputtering device comprising: an accelerator for causing the sputtering to collide with the surface of the sputtering substrate.
JP3546487U 1987-03-11 1987-03-11 Pending JPS63143569U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3546487U JPS63143569U (en) 1987-03-11 1987-03-11

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3546487U JPS63143569U (en) 1987-03-11 1987-03-11

Publications (1)

Publication Number Publication Date
JPS63143569U true JPS63143569U (en) 1988-09-21

Family

ID=30844983

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3546487U Pending JPS63143569U (en) 1987-03-11 1987-03-11

Country Status (1)

Country Link
JP (1) JPS63143569U (en)

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