JPS63142906U - - Google Patents
Info
- Publication number
- JPS63142906U JPS63142906U JP3530887U JP3530887U JPS63142906U JP S63142906 U JPS63142906 U JP S63142906U JP 3530887 U JP3530887 U JP 3530887U JP 3530887 U JP3530887 U JP 3530887U JP S63142906 U JPS63142906 U JP S63142906U
- Authority
- JP
- Japan
- Prior art keywords
- amplification stage
- voltage
- power amplification
- fet
- current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003321 amplification Effects 0.000 claims description 8
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 8
- 230000005856 abnormality Effects 0.000 claims 1
- 230000000295 complement effect Effects 0.000 claims 1
- 230000002265 prevention Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
Landscapes
- Tone Control, Compression And Expansion, Limiting Amplitude (AREA)
- Amplifiers (AREA)
Description
第1図は本考案の一実施例を示す回路図、第2
図は接合型FETの特性図である。
主な図番の説明、10……プリドライバトラン
ジスタ、18,19……ドライバトランジスタ、
21,22……出力トランジスタ、27……電圧
増幅段、28……電力増幅段、29……FET、
30……ダイオード。
Figure 1 is a circuit diagram showing one embodiment of the present invention;
The figure is a characteristic diagram of a junction type FET. Explanation of main figure numbers, 10... pre-driver transistor, 18, 19... driver transistor,
21, 22... Output transistor, 27 ... Voltage amplification stage, 28 ... Power amplification stage, 29... FET,
30...Diode.
Claims (1)
で電力増幅してスピーカを駆動する低周波増幅器
において、前記電圧増幅段及び前記電力増幅段間
にドレイン・ソース間が接続されたFETと、前
記電力増幅段の初段を構成するコンプリメンタリ
プツシユプル回路のトランジスタの逆方向電流を
防止するべく設けられた逆流防止用のダイオード
とを備え、前記FETの定電流特性により異常時
における前記電力増幅段に流入する電流を制限す
ると共に大入力信号時において前記FETのドレ
イン・ソース間電圧が増大することにより前記プ
ツシユプル回路のトランジスタのベース・エミツ
タ間を逆方向電流が流れるのを前記ダイオードに
より防止したことを特徴とする低周波増幅器の電
流制限回路。 A low frequency amplifier that drives a speaker by power amplifying a signal voltage amplified in a voltage amplification stage in a power amplification stage, the FET having a drain and source connected between the voltage amplification stage and the power amplification stage; A reverse current prevention diode is provided to prevent reverse current in the transistor of the complementary push-pull circuit that constitutes the first stage of the power amplification stage, and the constant current characteristic of the FET prevents the power amplification stage from flowing in the event of an abnormality. The diode prevents a reverse current from flowing between the base and emitter of the transistor of the push-pull circuit by limiting the inflowing current and increasing the voltage between the drain and source of the FET at the time of a large input signal. Characteristic current limiting circuit for low frequency amplifiers.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3530887U JPS63142906U (en) | 1987-03-11 | 1987-03-11 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3530887U JPS63142906U (en) | 1987-03-11 | 1987-03-11 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63142906U true JPS63142906U (en) | 1988-09-20 |
Family
ID=30844682
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3530887U Pending JPS63142906U (en) | 1987-03-11 | 1987-03-11 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63142906U (en) |
-
1987
- 1987-03-11 JP JP3530887U patent/JPS63142906U/ja active Pending
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