JPS5925483B2 - push pull amplifier circuit - Google Patents

push pull amplifier circuit

Info

Publication number
JPS5925483B2
JPS5925483B2 JP14829577A JP14829577A JPS5925483B2 JP S5925483 B2 JPS5925483 B2 JP S5925483B2 JP 14829577 A JP14829577 A JP 14829577A JP 14829577 A JP14829577 A JP 14829577A JP S5925483 B2 JPS5925483 B2 JP S5925483B2
Authority
JP
Japan
Prior art keywords
transistor
output
resistor
amplifier circuit
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP14829577A
Other languages
Japanese (ja)
Other versions
JPS5480658A (en
Inventor
昭夫 小沢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Electronic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Electronic Corp filed Critical Pioneer Electronic Corp
Priority to JP14829577A priority Critical patent/JPS5925483B2/en
Publication of JPS5480658A publication Critical patent/JPS5480658A/en
Publication of JPS5925483B2 publication Critical patent/JPS5925483B2/en
Expired legal-status Critical Current

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  • Amplifiers (AREA)

Description

【発明の詳細な説明】 本発明はオーディオ機器の出力増幅等に用いられるプッ
シュプル増幅回路に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a push-pull amplifier circuit used for output amplification of audio equipment.

一般にか\るプッシュプル増幅回路ハパワーアンプと称
され各種のタイプのものが採用されているが、その基本
となるものはA級及びB級のコンプリメンタリプッシュ
プル増幅回路である。
These push-pull amplifier circuits are generally referred to as power amplifiers, and various types are employed, but the basic ones are class A and class B complementary push-pull amplifier circuits.

A級のものは1対の出力トランジスタが常に能動領域で
動作し遮断領域へ移行することがないので、スイッチン
グ歪は発生しない利点があるが、バイアス電流を多(流
す必要があシ、熱損失が太き(なる欠点がある。
Class A transistors have a pair of output transistors that always operate in the active region and never shift to the cutoff region, so they have the advantage of not generating switching distortion. It is thick (there is a drawback).

これに対してB級のものはA級に比べてバイアス電流は
少なく熱損失も少ないが、出力トランジスタが交互に遮
断するためスイッチング歪が発生する。
On the other hand, class B transistors have less bias current and less heat loss than class A transistors, but switching distortion occurs because the output transistors are alternately cut off.

本発明はこのような点に鑑み、A級とB級のプッシュプ
ル増幅回路における欠点を除去すべ(。
In view of these points, the present invention aims to eliminate the drawbacks of class A and class B push-pull amplifier circuits.

熱損失が少ないと共にスイッチング歪のないプッシュプ
ル増幅回路を提供するものである。
A push-pull amplifier circuit with low heat loss and no switching distortion is provided.

この目的のため本発明は、エミッタかそれぞれ抵抗を介
して出力点にて共通接続された第1及び第2の出力トラ
ンジスタを有するものにおいて、それぞれのソースに負
荷抵抗が接続されたNチャンネルとPチャンネルのFE
T’¥有し、このFETのソースが出力トランジスタの
ベースに接続され各ゲートに与えるバイアスをそれぞれ
略1/2IDs sの点に設定し、前記FETのゲート
に信号入力が印加されたときに第1及び第2の出力トラ
ンジスタのベース間電圧を増大する方向に変化させ、前
記各一方のエミッタ抵抗の端子間電圧の減少を補って名
一方の出力トランジスタの遮断遷移を阻止するようにし
たことを特徴とする。
For this purpose, the present invention provides an N-channel transistor and a P-channel transistor, each having a first and a second output transistor whose emitters are connected in common at the output point through a resistor, respectively, and whose source is connected to a load resistor. Channel FE
The source of this FET is connected to the base of the output transistor, and the bias applied to each gate is set to approximately 1/2 IDs s, and when a signal input is applied to the gate of the FET, the The voltage between the bases of the first and second output transistors is changed in the direction of increasing, thereby compensating for the decrease in the voltage between the terminals of the emitter resistor of each one, thereby preventing the cutoff transition of the one output transistor. Features.

以下、図面を参照して本発明の一実施例を具体的に説明
すると、第1図において、コンプリメンタリ出力トラン
ジスタとしてのNPN)ランジスタ1とPNP)ランジ
スタ1′のエミッタがそれぞれ抵抗2.2”’¥介して
出力点Oに共通接続され、更に負荷3の方へ接続されて
いる。
Hereinafter, one embodiment of the present invention will be described in detail with reference to the drawings. In FIG. 1, the emitters of NPN) transistor 1 and PNP) transistor 1' as complementary output transistors each have a resistor of 2.2"'. It is commonly connected to the output point O via ¥, and is further connected to the load 3.

トランジスタ1.1′のベースはコンプリメンタリFE
TとしてのNチャンネルFET4とPチャンネルFET
4’のソースにそれぞれ接続され、これらのFET4
゜4′のソースと電源との間に抵抗5,5′がそれぞれ
接続される。
The base of transistor 1.1' is complementary FE
N-channel FET4 and P-channel FET as T
4' sources, respectively, and these FETs 4'
Resistors 5 and 5' are connected between the source of 4' and the power supply, respectively.

FET4.4’の両ゲート間にはトランジスタ1,1′
にバイアス電流を流すためのバイアス回路6の抵抗7が
接続され、この抵抗7は定電流源8によシハイアス電流
が供給されている。
Transistors 1 and 1' are connected between both gates of FET4 and 4'.
A resistor 7 of a bias circuit 6 for flowing a bias current is connected to the resistor 7, and the resistor 7 is supplied with a high bias current by a constant current source 8.

また更にバイアス回路6には人力トランジスタ9が接続
されておシ、そのトランジスタ9のベースに入力点Sか
らの信号が印加されることにょシ。
Furthermore, a human-powered transistor 9 is connected to the bias circuit 6, and a signal from an input point S is applied to the base of the transistor 9.

その信号はFET4,4’を介してトランジスタ1゜1
′に印加され、該トランジスタ1,1′によりプッシュ
プル増幅され″c1負荷3を駆動するようになつ℃いる
The signal is transmitted to transistor 1゜1 through FET4, 4'.
' is applied to 'c1' and is push-pull amplified by the transistors 1 and 1' to drive the 'c1 load 3'.

次いで第2図と第3図を用いて第1図のプッシュプル増
幅回路の動作を説明すると、先ず無信号状態ではFET
4. イの動作点か共に第2図のA点、即ちドレイン
電流が0.5IDssとなる点に設定する。
Next, the operation of the push-pull amplifier circuit shown in Fig. 1 will be explained using Figs. 2 and 3. First, in a no-signal state, the FET
4. The operating point A and A are both set at point A in FIG. 2, that is, the point where the drain current is 0.5 IDss.

FETは2乗特性を有しているため。このときのゲート
・ソース間電圧VGSは、0.29Vpとなる。
This is because FETs have square characteristics. The gate-source voltage VGS at this time is 0.29Vp.

そして人力信号条件により出力点Oが正側に振れたとき
抵抗2の両端の電圧”寵、は増加し、抵抗2′の両端の
電圧VE2は減少する。
When the output point O swings to the positive side due to the human input signal condition, the voltage across the resistor 2 increases, and the voltage VE2 across the resistor 2' decreases.

このときFET4のソースと抵抗5の接続点Pも正側に
振れるため、抵抗5に流れる電流が増加し、FET4の
ドレイン電流も増加する。
At this time, the connection point P between the source of the FET 4 and the resistor 5 also swings to the positive side, so the current flowing through the resistor 5 increases and the drain current of the FET 4 also increases.

−万FET4’のソースと抵抗5′の接続点Vも正側に
振れるため、抵抗5′に流れる電流は減少しFET 4
’のドレイン電流も減少する。
-The connection point V between the source of FET 4' and resistor 5' also swings to the positive side, so the current flowing through resistor 5' decreases and FET 4
The drain current of ' also decreases.

このときFET4の動作点は第2図のA点からB点に移
行してゲート・ソース間電圧が0.29 V p カら
O,13Vpに変化するが、FET4′の動作点は第2
図のA点から0点に移行してゲート・ソース間電圧が0
.29Vpから0.5 V pに変化する。
At this time, the operating point of FET4 shifts from point A to point B in Figure 2, and the gate-source voltage changes from 0.29 Vp to O.13Vp, but the operating point of FET4' shifts from point A to point B in Figure 2.
The voltage between the gate and source becomes 0 as it moves from point A in the figure to point 0.
.. It changes from 29Vp to 0.5Vp.

そこでFET4,4’のソース間電圧。即ち、トランジ
スタ1,1′のベース間’に圧VBBはFET4のゲー
ト・ソース間電圧の変化量0.16VpとEFT 4’
のゲート・ソース間電圧の変化量0.21Vpとの差の
0.05Vpだけ変化し、この変化はトランジスタ1,
1′のベース間電圧VBBが増える方向となる。
Therefore, the voltage between the sources of FET4 and 4'. That is, the voltage VBB between the bases of transistors 1 and 1' is equal to the change in voltage between the gate and source of FET 4, 0.16Vp, and EFT 4'.
It changes by 0.05Vp, which is the difference between the gate-source voltage change amount of 0.21Vp, and this change is caused by
1' is in the direction of increasing the base-to-base voltage VBB.

これは、抵抗10両端の電圧v02の減少を補う方向で
あシ、この結果トランジスタ1′の遮断遷移を阻止する
ことが可能になる。
This is in the direction of compensating for the decrease in the voltage v02 across the resistor 10, and as a result, it becomes possible to prevent the transistor 1' from switching off.

これに対して入力信号条件によシ出力点0が負側に振れ
た場合には、同様にしてFET4゜4′のベース間層上
VBBが増加し、トランジスタ1の遮断遷移が阻止され
る。
On the other hand, when the output point 0 swings to the negative side due to the input signal condition, VBB on the interbase layer of the FET 4° 4' similarly increases, and the cutoff transition of the transistor 1 is prevented.

同第3図においてはDは出力電圧波形を示し、EはFE
T4.4’のソース間電圧、即ちトランジスタ1,1′
のベース間電圧vBBの波形を示している。
In Fig. 3, D indicates the output voltage waveform, and E indicates the FE
T4.4' source voltage, i.e. transistors 1,1'
The waveform of the base-to-base voltage vBB is shown.

従って第4図に示すように、トランジスタ1の電流aと
トランジスタ1′お電流a′は零となることはな(常に
能動領域にて動作させることができ、且つ無信号時のア
イドル電流はA級の増幅回路に比して充分小さくするこ
とが可能である。
Therefore, as shown in FIG. 4, the current a of transistor 1 and the current a' of transistor 1' never become zero (they can always operate in the active region, and the idle current when there is no signal is A). It is possible to make the amplifier circuit sufficiently small compared to a class amplifier circuit.

尚図中破線す、b’は従来のB級のプッシュプル増幅回
路の電流波形を示し、CTC’は無信号時のアイドル電
流波形である。
In the figure, broken lines S and b' indicate current waveforms of a conventional class B push-pull amplifier circuit, and CTC' indicates an idle current waveform when there is no signal.

このように本発明によると、出力トランジスタ1.1′
は常に能動領域で動作し遮断領域へ移行することがない
ので、B級の増幅回路におけるようなスイッチング歪は
発生しない。
Thus, according to the invention, the output transistor 1.1'
Since the amplifier always operates in the active region and never shifts to the cutoff region, switching distortion unlike in a class B amplifier circuit does not occur.

またバイアス電流を多(流す必要がないため、A級の増
幅回路に比へて熱損失を小さくすることができる。
Furthermore, since there is no need to flow a large bias current, heat loss can be reduced compared to a class A amplifier circuit.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明によるプッシュプル増幅回路の一実施例
を示す回路図、第2図はFETの動作特性図、第3図は
出力電圧波形と出力トランジスタベース間電圧波形の図
、第4図は出力トランジスタの電流波形図である。
Fig. 1 is a circuit diagram showing an embodiment of the push-pull amplifier circuit according to the present invention, Fig. 2 is a diagram of the operating characteristics of the FET, Fig. 3 is a diagram of the output voltage waveform and the voltage waveform between the base of the output transistor, and Fig. 4 is a current waveform diagram of the output transistor.

Claims (1)

【特許請求の範囲】[Claims] 1 エミッタがそれぞれ抵抗を介して出力点にて共通接
続された第1及び第2の出力トランジスタを有するもの
において、それぞれのソースに負荷抵抗が接続されたN
チャンネルとPチャンネルのFETを有し、該FETの
ソースが前記出力トランジスタのベースに接続され各ゲ
ートに与えるバイアスをそれぞれ略1/2・ID5sの
点に対応するゲートバイアス電圧に設定しくID5sは
ゲートバイアスがゼロのときのドレイン電流)、前記F
ETのゲートに信号人力が印加されたときに第1及び第
2の出力トランジスタのベース間tEEEを増大する方
向に変化させ、前記各一方のエミッタ抵抗の端子間電圧
の減少を補って各一方の出力トランジスタの遮断遷移を
阻止するようにしたことを特徴とするプッシュプル増幅
回路。
1. A transistor having a first and a second output transistor whose emitters are connected in common at the output point via a resistor, and a load resistor is connected to each source.
The source of the FET is connected to the base of the output transistor, and the bias applied to each gate is set to a gate bias voltage corresponding to approximately 1/2 ID5s, and ID5s is the gate bias voltage. drain current when bias is zero), the above F
When a signal is applied to the gate of ET, the tEEE between the bases of the first and second output transistors is changed in the direction of increasing, and the decrease in the voltage between the terminals of the emitter resistor of each one is compensated for. A push-pull amplifier circuit characterized in that a cut-off transition of an output transistor is prevented.
JP14829577A 1977-12-09 1977-12-09 push pull amplifier circuit Expired JPS5925483B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14829577A JPS5925483B2 (en) 1977-12-09 1977-12-09 push pull amplifier circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14829577A JPS5925483B2 (en) 1977-12-09 1977-12-09 push pull amplifier circuit

Publications (2)

Publication Number Publication Date
JPS5480658A JPS5480658A (en) 1979-06-27
JPS5925483B2 true JPS5925483B2 (en) 1984-06-18

Family

ID=15449574

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14829577A Expired JPS5925483B2 (en) 1977-12-09 1977-12-09 push pull amplifier circuit

Country Status (1)

Country Link
JP (1) JPS5925483B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9210392B2 (en) 2012-05-01 2015-12-08 Pelican Imaging Coporation Camera modules patterned with pi filter groups
US9214013B2 (en) 2012-09-14 2015-12-15 Pelican Imaging Corporation Systems and methods for correcting user identified artifacts in light field images
US9235900B2 (en) 2012-08-21 2016-01-12 Pelican Imaging Corporation Systems and methods for estimating depth and visibility from a reference viewpoint for pixels in a set of images captured from different viewpoints
US9712759B2 (en) 2008-05-20 2017-07-18 Fotonation Cayman Limited Systems and methods for generating depth maps using a camera arrays incorporating monochrome and color cameras

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9712759B2 (en) 2008-05-20 2017-07-18 Fotonation Cayman Limited Systems and methods for generating depth maps using a camera arrays incorporating monochrome and color cameras
US9210392B2 (en) 2012-05-01 2015-12-08 Pelican Imaging Coporation Camera modules patterned with pi filter groups
US9706132B2 (en) 2012-05-01 2017-07-11 Fotonation Cayman Limited Camera modules patterned with pi filter groups
US9235900B2 (en) 2012-08-21 2016-01-12 Pelican Imaging Corporation Systems and methods for estimating depth and visibility from a reference viewpoint for pixels in a set of images captured from different viewpoints
US9214013B2 (en) 2012-09-14 2015-12-15 Pelican Imaging Corporation Systems and methods for correcting user identified artifacts in light field images

Also Published As

Publication number Publication date
JPS5480658A (en) 1979-06-27

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