JPS63139672A - Semiconductor wafer grindstone - Google Patents

Semiconductor wafer grindstone

Info

Publication number
JPS63139672A
JPS63139672A JP28695586A JP28695586A JPS63139672A JP S63139672 A JPS63139672 A JP S63139672A JP 28695586 A JP28695586 A JP 28695586A JP 28695586 A JP28695586 A JP 28695586A JP S63139672 A JPS63139672 A JP S63139672A
Authority
JP
Japan
Prior art keywords
grinding
grindstone
wafer
rough
finishing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP28695586A
Other languages
Japanese (ja)
Inventor
Isao Sato
功 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Yamagata Ltd
Original Assignee
NEC Yamagata Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Yamagata Ltd filed Critical NEC Yamagata Ltd
Priority to JP28695586A priority Critical patent/JPS63139672A/en
Publication of JPS63139672A publication Critical patent/JPS63139672A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To make it possible to continuously use one grindstone for finishing a wafer having a predetermined thickness and a predetermined surface-roughness by integrally incorporating rough-grinding and finishing grindstones with each other so as to arrange them in a ring-like pattern. CONSTITUTION:When a wafer 6 sucked and secured to a chuck table 7 is advanced toward the center from the outer peripheral surface of a grindstone, the wafer 6 is at first rough-ground by a rough-grinding grindstone part 1 in the outer peripheral part of a grindstone to a depth of DELTAt1. Further, the rough- ground surface is then subsequently ground by a finishing grindstone 2 by DELTAt2 so that the thickness of the wafer 6 then has a value such as t-(DELTAt1+DELTAt2), and the wafer is finished having a surface-roughness corresponding to the particle size of the finishing grind stone 2.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体を製造する際に使われるウェーハ裏面研
削装置に装着する研削砥石に関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a grinding wheel that is attached to a wafer back grinding device used in the manufacture of semiconductors.

〔従来の技術〕[Conventional technology]

従来、この梅の研削砥石は、粒度別に独立した回転軸に
独立した研削砥石を装着するか、回転軸でも研削砥石は
粒度別に独立したものを装着し研削を行なっていた。
Conventionally, with this Ume grinding wheel, grinding was carried out by attaching independent grinding wheels to separate rotating shafts for each particle size, or by attaching independent grinding wheels to separate rotating shafts for each particle size.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

粒度別に独立した回転軸を使用した場合、研削装置がよ
シ大型、複雑、かつ高価なものになると同時に、各回転
軸相互の高さ調整が必要となシ、高さ震災の頻度が多く
なると高さ調整時間の占める割合が大きくなってし1う
という問題点かめる。
If separate rotating shafts are used for each grain size, the grinding equipment becomes larger, more complex, and more expensive. At the same time, the height of each rotating shaft must be adjusted, which increases the frequency of height earthquakes. In this case, the problem arises that the proportion of the height adjustment time becomes large.

また、粒度別に独立した研削砥石を使用した場合は、研
削砥石の脱着、調整が研削砥石の個数倍かかってしまう
と同時に、ウェーハ割れの危険度も増大するという問題
点かめる。
In addition, when separate grinding wheels are used for each grain size, it takes twice as long to attach, remove, and adjust the grinding wheels as there are grinding wheels, and at the same time, there is a problem that the risk of wafer cracking increases.

〔問題点を解決するための手段〕[Means for solving problems]

本発明によれば、回転軸に装着した時に研削砥石が同心
円で回転する様に、外周を荒研削用、内周を仕上げ研削
用にして一体化し7とものをリング状に配列し、かつ研
削砥石低面の形状全外周から中心に同けて下方に適度の
傾斜を設けた構造の研削砥石とすることにより、概ね所
定の淳に切削することを目的とする荒研削と所定の厚さ
及び粗さに仕上げることを目的とする仕上げ研削を単一
口転軸かつ1本の研削砥石で行なうことができる。
According to the present invention, the outer periphery is used for rough grinding and the inner periphery is used for finish grinding, and the grinding wheels 7 and 7 are arranged in a ring shape so that the grinding wheel rotates concentrically when attached to the rotating shaft, and Shape of the lower surface of the grinding wheel By using a grinding wheel with a structure that has a moderate slope downward from the entire outer periphery to the center, it is possible to perform rough grinding with the aim of cutting to approximately a predetermined thickness, and to a predetermined thickness and thickness. Finish grinding for the purpose of achieving a rough finish can be performed with a single rotary shaft and one grinding wheel.

〔実施例〕〔Example〕

次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.

第1図は本発明の一実施例の縦断面図である。FIG. 1 is a longitudinal sectional view of an embodiment of the present invention.

また、第2図は、第1図に示した研削砥石の拡大図であ
る。荒研削用砥石1と仕上げ研削用砥石2から構成され
ている研削砥石は、ホイールふ及びマウントディスク4
を介して回転軸5に連結され、回転軸5の駆動によって
高速回転される。
Moreover, FIG. 2 is an enlarged view of the grinding wheel shown in FIG. 1. The grinding wheel consists of a rough grinding wheel 1 and a finish grinding wheel 2, and the wheel base and mount disk 4
The rotary shaft 5 is connected to the rotary shaft 5 through the rotary shaft 5, and rotated at high speed by the rotary shaft 5.

そこへチャックテーブル7によって吸着固定されたウェ
ーハ6を研削砥石外周から中心に向けて進入させると、
ウェーハ6はまず荒研削用砥石1によりΔtl  だけ
荒研削される。次に荒研削面は連続して仕上は研削用砥
石2によりΔt2  だけ研削され、最終的にウェーハ
6はJ’l−さ1−(Δ11十Δt2)となシ、かつ仕
上は研削用砥石2の粒度に見合った粗さに仕上げられる
When the wafer 6, which has been suctioned and fixed by the chuck table 7, is introduced from the outer periphery of the grinding wheel toward the center,
The wafer 6 is first roughly ground by Δtl by the rough grinding wheel 1. Next, the rough ground surface is continuously ground by Δt2 by the grinding wheel 2, and finally the wafer 6 becomes J'l−Sa1−(Δ11−Δt2), and the finish is by the grinding wheel 2. Finished with a roughness commensurate with the grain size.

〔発明の効果〕〔Effect of the invention〕

本発明によれば、荒研削用砥石の許容最大切削代の範囲
内において、単一回転軸かつ1本の研削砥石で連続して
ウェーハを所定の厚さ、粗さに仕上ることができる。
According to the present invention, wafers can be continuously finished to a predetermined thickness and roughness using a single rotating shaft and one grinding wheel within the range of the maximum allowable cutting allowance of the rough grinding wheel.

単一回転軸かつ1本の研AiJ砥石であるため、研削砥
石の脱着、調整が簡素化され、研削砥石に起因するウェ
ーハ割れの危険度も最小限にすることができる。また、
研削装置もよシ小屋、簡素化され、かつ安価なものにな
るという効果がある。
Since it has a single rotating shaft and one grinding AiJ grinding wheel, attachment/detachment and adjustment of the grinding wheel are simplified, and the risk of wafer cracking caused by the grinding wheel can be minimized. Also,
This has the effect of making the grinding device simpler, simpler, and cheaper.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例の縦断面図、第2図は第1図
のA部拡大図である。 l・・・・・・荒研削用砥石、2・・・・・・仕上げ研
削用砥石、3・・・・・・ホイール、4・・・・・・マ
ウントディスク、5・・・・・・回転軸、6・・・・・
・ウェーハ、7・・・・・・チャックテーブル。
FIG. 1 is a longitudinal sectional view of an embodiment of the present invention, and FIG. 2 is an enlarged view of section A in FIG. 1... Grindstone for rough grinding, 2... Grindstone for finish grinding, 3... Wheel, 4... Mount disc, 5... Rotating axis, 6...
・Wafer, 7...Chuck table.

Claims (1)

【特許請求の範囲】[Claims] 荒研削及び仕上げ研削を必要とする半導体ウェーハ用の
研削装置において、荒研削及び仕上げ研削用砥石を一体
化しリング状に配列したことを特徴とする半導体ウェー
ハ用研削砥石。
A grinding wheel for semiconductor wafers, which is a grinding device for semiconductor wafers that requires rough grinding and finish grinding, characterized in that the grindstones for rough grinding and finish grinding are integrated and arranged in a ring shape.
JP28695586A 1986-12-01 1986-12-01 Semiconductor wafer grindstone Pending JPS63139672A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28695586A JPS63139672A (en) 1986-12-01 1986-12-01 Semiconductor wafer grindstone

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28695586A JPS63139672A (en) 1986-12-01 1986-12-01 Semiconductor wafer grindstone

Publications (1)

Publication Number Publication Date
JPS63139672A true JPS63139672A (en) 1988-06-11

Family

ID=17711116

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28695586A Pending JPS63139672A (en) 1986-12-01 1986-12-01 Semiconductor wafer grindstone

Country Status (1)

Country Link
JP (1) JPS63139672A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0355168A (en) * 1989-07-24 1991-03-08 Tokyo Seimitsu Co Ltd Cup-form grinding wheel for surface grinding machine
JPH0642064U (en) * 1992-11-17 1994-06-03 旭ダイヤモンド工業株式会社 Cup grindstone
WO2011141500A1 (en) * 2010-05-14 2011-11-17 Saint-Gobain Diamantwerkzeuge Gmbh & Co. Kg Grinding disc

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0355168A (en) * 1989-07-24 1991-03-08 Tokyo Seimitsu Co Ltd Cup-form grinding wheel for surface grinding machine
JPH0642064U (en) * 1992-11-17 1994-06-03 旭ダイヤモンド工業株式会社 Cup grindstone
WO2011141500A1 (en) * 2010-05-14 2011-11-17 Saint-Gobain Diamantwerkzeuge Gmbh & Co. Kg Grinding disc

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