JPS63133A - フオトマスクの検査方法 - Google Patents
フオトマスクの検査方法Info
- Publication number
- JPS63133A JPS63133A JP61143359A JP14335986A JPS63133A JP S63133 A JPS63133 A JP S63133A JP 61143359 A JP61143359 A JP 61143359A JP 14335986 A JP14335986 A JP 14335986A JP S63133 A JPS63133 A JP S63133A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- predetermined
- defect
- defect detecting
- photomask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010998 test method Methods 0.000 title 1
- 230000007547 defect Effects 0.000 claims abstract description 42
- 238000001514 detection method Methods 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims abstract description 8
- 230000002950 deficient Effects 0.000 claims abstract description 6
- 230000002093 peripheral effect Effects 0.000 claims abstract 3
- 239000000758 substrate Substances 0.000 abstract description 4
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000007689 inspection Methods 0.000 description 11
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 6
- 230000002159 abnormal effect Effects 0.000 description 6
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
Landscapes
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61143359A JPS63133A (ja) | 1986-06-19 | 1986-06-19 | フオトマスクの検査方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61143359A JPS63133A (ja) | 1986-06-19 | 1986-06-19 | フオトマスクの検査方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63133A true JPS63133A (ja) | 1988-01-05 |
| JPH0375854B2 JPH0375854B2 (enrdf_load_stackoverflow) | 1991-12-03 |
Family
ID=15336950
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61143359A Granted JPS63133A (ja) | 1986-06-19 | 1986-06-19 | フオトマスクの検査方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63133A (enrdf_load_stackoverflow) |
-
1986
- 1986-06-19 JP JP61143359A patent/JPS63133A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0375854B2 (enrdf_load_stackoverflow) | 1991-12-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5804340A (en) | Photomask inspection method and inspection tape therefor | |
| US4718767A (en) | Method of inspecting the pattern on a photographic mask | |
| US20070002322A1 (en) | Image inspection method | |
| KR0172801B1 (ko) | 공정 마진 테스트용 포토 마스크와 테스트 방법 | |
| US4778745A (en) | Defect detection method of semiconductor wafer patterns | |
| CN1217399C (zh) | 检测晶片阶段缺陷的方法 | |
| JP3879904B2 (ja) | グレートーンマスクの欠陥検査方法及び欠陥検査装置 | |
| JPH04328548A (ja) | フォトマスクの検査方法および装置 | |
| US7160650B2 (en) | Method of inspecting a mask | |
| JPS63133A (ja) | フオトマスクの検査方法 | |
| JPH09211840A (ja) | レチクルの検査方法及び検査装置並びにパターンの検査方法及び検査装置 | |
| US4637714A (en) | Inspection system for pellicalized reticles | |
| JPH06232229A (ja) | 欠陥検査方法及びその装置 | |
| Gupta et al. | Defects in photomasks | |
| JPS63163464A (ja) | マスク | |
| JPH01239922A (ja) | パターン欠陥検査装置 | |
| JP2007303971A (ja) | 薬液起因の欠陥検出方法及び半導体装置の製造方法 | |
| JPH07181686A (ja) | レジストパターンの形成方法 | |
| US5403681A (en) | Method of producing semiconductor device and photomask therefor | |
| JPS6076122A (ja) | 微細ピンホ−ル欠陥検査方法 | |
| JPH01109717A (ja) | レジストパターン検査方法 | |
| Almog et al. | Size matters: defect detectability in reticle and wafer inspection including advanced aerial image simulation for defect printability | |
| JPH0644147B2 (ja) | フォトマスクの欠陥検査方法 | |
| Eran et al. | Improved image acquistion for advanced reticle inspection | |
| JPS5832416A (ja) | パタ−ン欠陥検査方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |