JPS6313380A - Amorphous silicon solar cell - Google Patents
Amorphous silicon solar cellInfo
- Publication number
- JPS6313380A JPS6313380A JP61156040A JP15604086A JPS6313380A JP S6313380 A JPS6313380 A JP S6313380A JP 61156040 A JP61156040 A JP 61156040A JP 15604086 A JP15604086 A JP 15604086A JP S6313380 A JPS6313380 A JP S6313380A
- Authority
- JP
- Japan
- Prior art keywords
- type
- layer
- film
- solar cell
- amorphous silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract description 21
- 230000003287 optical effect Effects 0.000 claims abstract description 10
- 239000010409 thin film Substances 0.000 claims abstract description 7
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 14
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 239000010408 film Substances 0.000 abstract description 40
- 238000006243 chemical reaction Methods 0.000 abstract description 8
- 238000000354 decomposition reaction Methods 0.000 abstract description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 3
- 239000011521 glass Substances 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 3
- 239000000126 substance Substances 0.000 abstract 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 57
- 230000007423 decrease Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はアモルファスシリコン太陽電池に係り、大きな
開放電圧を有する高効率なアモルファスシリコン太陽電
池に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to an amorphous silicon solar cell, and more particularly, to a highly efficient amorphous silicon solar cell having a large open-circuit voltage.
従来、ｐ型層−ＳｉＣ： Ｈ（水素含有アモルファス炭
化シリコン）とｉ型層−５ｉ：Ｈ（水素含有アモルファ
スシリコン）によるヘテロ接合を有する太陽電池におい
て、接合のｐ／ｉ界面に、カーボン量と膜厚を調整した
バッファ層を設けることにより２層と＋５のバンド幅が
連続的につながるようにしτ光電変換効率を高くできる
ことが報告されている（第１７回太陽エネルギー推進委
員会第１１回アモルファス連絡会予稿集第１９４および
１９５頁参照）。Conventionally, in a solar cell having a heterojunction with a p-type layer -SiC:H (hydrogen-containing amorphous silicon carbide) and an i-type layer -5i:H (hydrogen-containing amorphous silicon), the amount of carbon and It has been reported that by providing a buffer layer with an adjusted film thickness, the two layers and the +5 band width can be connected continuously and the τ photoelectric conversion efficiency can be increased (17th Solar Energy Promotion Committee 11th Amorphous (See Proceedings of the Liaison Committee, pages 194 and 195).
すなわち、この場合のバッファ層はアモルファスシリコ
ン（ａ−３ｉ）であったり、またアモルファス炭化シリ
コン（ａ−５ｉＣ）の場合には、その光学的バンドギャ
ップ幅は、Ｐ型ａ−ＳｉＣ：Ｈ膜とｉ型ａ−８ｉ：Ｈ膜
のバンドギャップ幅を連続的につなげるために、Ｐ型層
側からｉ型層側へ向ってバンドギャップ幅が減少してい
るようなものであり、したがってＰ型層のバンドギャッ
プ幅と同じかより小さいもの、又はｉ型層と同じかより
大きいものである。That is, in this case, the buffer layer is amorphous silicon (a-3i), or in the case of amorphous silicon carbide (a-5iC), its optical bandgap width is similar to that of the P-type a-SiC:H film. In order to continuously connect the bandgap width of the i-type a-8i:H film, the bandgap width decreases from the P-type layer side to the i-type layer side, and therefore the P-type layer The bandgap width is the same as or smaller than the bandgap width of the i-type layer.
なお、この太陽電池の性能は、光電変換効率が１０％、
開放電圧が０．８８Ｖであった。The performance of this solar cell is that the photoelectric conversion efficiency is 10%,
The open circuit voltage was 0.88V.
上記従来技術による太陽電池の開放電圧は、主要光電変
換部であるｉ型ａ−Ｓｉ：Ｈ膜のバンドギャップが１．
８２〜１．８６ ｅＶであることがら推定して充分な値
ではない。したがって本発明の目的は、開放電圧が大き
く、光電変換効率の高いアモルファスシリコン太陽電池
を提供することにある。The open-circuit voltage of the solar cell according to the above-mentioned conventional technology is determined by the band gap of the i-type a-Si:H film, which is the main photoelectric conversion part, of 1.
Since it is 82 to 1.86 eV, it is not a sufficient value. Therefore, an object of the present invention is to provide an amorphous silicon solar cell with a high open circuit voltage and high photoelectric conversion efficiency.
本発明は次の如き構成で実現出来る。即ち、ρ型、ｉ型
、ｎ型の各層が積層されたｐｉｎ構造を有するアモルフ
ァス・シリコン太陽電池におけるＰ型層とｉ型層との間
に当該Ｐ型層よりも光学的バンドギャップ幅の大きい薄
膜を有するバッファ層を設けることである。具体例を例
示すればバッファ層として、Ｐ型ａ−ＳｉＣ：Ｈ膜より
も光学的バンドギャップの大きいｉ型ａ−ＳｉＣ：Ｈ膜
を少なくとも一層用いることである。The present invention can be realized with the following configuration. That is, in an amorphous silicon solar cell having a pin structure in which ρ-type, i-type, and n-type layers are laminated, the optical band gap width between the P-type layer and the i-type layer is larger than that of the P-type layer. A buffer layer having a thin film is provided. A specific example is to use at least one layer of an i-type a-SiC:H film, which has a larger optical bandgap than a P-type a-SiC:H film, as the buffer layer.
該バッファ層は、２層とｉ層のバンドの連続性、特に伝
導帯側を従来技術に比し、より連続的につなぐ作用をな
し、その結果界面再結合速度が減少して、開放電圧が大
きくなる。バッファ層としてｐＪｌより大きいバンドギ
ャップを有するｉ型ａ −５ｉＣ： Ｈ膜一層だけでな
く、同種類の膜で順次１ｆｆｌ側へバンドギャップが漸
減するような膜を連続的にあるいは積層することにより
、上記作用は顕著となり、さらに開放電圧の増加が図れ
た。The buffer layer acts to connect the band continuity of the 2-layer and the i-layer, especially the conduction band side, more continuously than in the prior art, and as a result, the interfacial recombination rate decreases and the open circuit voltage increases. growing. As a buffer layer, not only a single layer of i-type a-5iC:H film having a band gap larger than pJl, but also continuous or laminated films of the same type whose band gap gradually decreases toward 1ffl side, The above effect became remarkable, and the open-circuit voltage was further increased.
以下、本発明を実施例により説明する。 Hereinafter, the present invention will be explained by examples.
実施例１
第１図に本発明の実施例を示す。まずガラス基板１１上
にＩＴＯ／５ｎ０２の２層膜から成る透明導電膜１２を
形成した。この上に、ＳｉＨ４゜ＣＨ４，Ｈ２ベースＢ
２Ｈ６の混合ガスの高周波プラズマ分解法により膜厚
８０人のｐ型ａ−ＳｉＣ：Ｈ膜１３を形成し、さらに膜
１３よりもＣ量が多く、シたがって膜１３より光学的バ
ンドギャップの大きい膜厚８０人のｉ型ａ−ＳｉＣ：Ｈ
膜のバッファ層１４を形成した。該バッファ層は、５ｉ
）（ａ、ｃ）Ｉ４およびＨ２の混合ガスを用い周知の高
周波プラズマ分解法によって成膜した。さらに、この上
にｉ型ａ−３ｉ：Ｈ膜１５．’ｎ型微結晶ＳＳ模膜６を
順次形成し、最後にＡｇ電極１７を蒸着して太陽電池を
作成した。本太陽電池の開放電圧は０．９２Ｖと高い値
を示し、光電変換効率は１１．１％であった。Example 1 FIG. 1 shows an example of the present invention. First, a transparent conductive film 12 consisting of a two-layer film of ITO/5n02 was formed on a glass substrate 11. On top of this, SiH4゜CH4, H2 base B
A p-type a-SiC:H film 13 with a film thickness of 80 mm was formed by high-frequency plasma decomposition of a mixed gas of 2H6, and furthermore, it contained a larger amount of C than the film 13, and therefore had a larger optical bandgap than the film 13. Film thickness 80 people i type a-SiC:H
A buffer layer 14 of the film was formed. The buffer layer is 5i
) (a, c) Films were formed by a well-known high frequency plasma decomposition method using a mixed gas of I4 and H2. Furthermore, an i-type a-3i:H film 15. An n-type microcrystalline SS pattern film 6 was sequentially formed, and finally an Ag electrode 17 was deposited to form a solar cell. The open circuit voltage of this solar cell was as high as 0.92 V, and the photoelectric conversion efficiency was 11.1%.
実施例２ 第２図を用いて説明する。Example 2 This will be explained using FIG.
上記実施例１においては、バッファ層１４は、Ｐ型層よ
りバンドギャップの大きいｉ型ａ−ＳｉＣ二■（膜の１
層より成っているが、本実施例は、バッファ層が２層（
第１層目２４．第２層目３４）より構成されている太陽
電池である。該太陽電池は２層から成るバッファ層薄膜
以外は全て実施例１と同じ構造である。第２図における
２層のバッファ層は、第１層目２４が２層よりバンドギ
ャップの大きい膜厚４０Ａのｉ型ａ−ＳｉＣ：Ｈ膜であ
り、第２層目３４が第１層目２４のｉ型ａ −５ｉＣ：
Ｈ膜よりバンドギャップが小さくかつｉ型ａ−５ｉ
： Ｈ暎１５よりもバンドギャップが大きい膜厚４０Ａ
のｉ型ａ−ＳｉＣ：Ｈ膜であり、Ｐ型層側からｉ型層側
へ向ってバッファ層２４゜３４の順でバンドギャップが
小さくなっている。In the first embodiment described above, the buffer layer 14 is made of i-type a-SiC2 (one layer of the film) which has a larger band gap than the P-type layer.
However, in this example, the buffer layer consists of two layers (
1st layer 24. This solar cell is composed of a second layer 34). The solar cell had the same structure as Example 1 except for the buffer layer thin film consisting of two layers. In the two buffer layers in FIG. 2, the first layer 24 is an i-type a-SiC:H film with a film thickness of 40A with a larger band gap than the second layer, and the second layer 34 is the first layer 24. Type i a-5iC:
The bandgap is smaller than the H film and the i-type a-5i
: Film thickness 40A with larger band gap than H15
It is an i-type a-SiC:H film, and the band gap decreases in the order of buffer layers 24° to 34 from the P-type layer side to the i-type layer side.
２層のバッファ層２４．３４を有る本太陽電池の開放電
圧は０．９５Ｖとより高い値を示し、光電変換効率は１
１．５％であった。The open circuit voltage of this solar cell with two buffer layers 24.34 shows a higher value of 0.95V, and the photoelectric conversion efficiency is 1
It was 1.5%.
本実施例では、Ｐ型層側からｉ型層側へバンドギャップ
が小さくなる様に２層のバッファ層を積層したものであ
るが、同様に３層以上のバッファ層を積層しても同じく
高い開放電圧が得られる。In this example, two buffer layers are laminated so that the band gap becomes smaller from the P-type layer side to the i-type layer side, but if three or more buffer layers are laminated in the same way, the band gap will be the same. Open circuit voltage can be obtained.
また、バッファ層にＰ型層側からｉ型層側へバンドギャ
ップが連続的に減少するようなグレイディソドバンドギ
ャップ層を設けてた場合も同様の結果が得られる。Further, similar results can be obtained when the buffer layer is provided with a graded bandgap layer in which the bandgap decreases continuously from the P-type layer side to the i-type layer side.
本発明によれば、ｐ型ａ−ＳｉＣ： Ｈ膜のバンドギャ
ップよりも大きいｉ型ａ−ＳｉＣ：Ｈ膜をバッファ層と
してｐｉ接合のｐ／ｉ界面に設けるのみで、アモルファ
スシリコン太陽電池の開放電圧を大きくすることができ
、その結果、開放電圧が０．９Ｖ以上、光電変換効率が
１１％以上という高性能な太陽電池を簡便に、かつ低コ
ストで作製できる。According to the present invention, by simply providing an i-type a-SiC:H film, which has a bandgap larger than that of the p-type a-SiC:H film, as a buffer layer at the p/i interface of the pi junction, it is possible to open an amorphous silicon solar cell. The voltage can be increased, and as a result, a high-performance solar cell with an open circuit voltage of 0.9 V or more and a photoelectric conversion efficiency of 11% or more can be easily produced at low cost.
第１図は、バッファ層一層からなるアモルファスシリコ
ン太陽電池の縦断面図、第２図は、バッファ層が２層の
薄、膜からなるアモルファスシリコン太陽電池の縦断面
図である。
１１・・・ガラス基板、１２・・・透明導電膜、１３−
ｐ型ａ−ＳｉＣ： Ｈ膜、１４−・・バッファ層、１５
− ｉ型ａ−３ｉ：Ｈ膜、１６− ｎ型微結晶Ｓｉ膜、
１７・・・Ａｇ電極、２４・・・バッファ層の第一層、
３４・・・バッファ層の第二層。FIG. 1 is a longitudinal sectional view of an amorphous silicon solar cell having a single buffer layer, and FIG. 2 is a longitudinal sectional view of an amorphous silicon solar cell having two buffer layers. 11...Glass substrate, 12...Transparent conductive film, 13-
p-type a-SiC: H film, 14--buffer layer, 15
- i-type a-3i: H film, 16- n-type microcrystalline Si film,
17...Ag electrode, 24...First layer of buffer layer,
34...Second layer of buffer layer.
Claims (1)
するアモルファスシリコン太陽電池において、該ｐ型層
と該ｉ型層との間に該ｐ型層よりも光学的バンドギャッ
プ幅の大きい薄膜を少なくとも含むバッファ層を有する
ことを特徴とするアモルファスシリコン太陽電池。 ２、上記バッファ層が２層以上の多層薄膜を有し、該多
層薄膜の上記ｐ型層側の第１層は上記ｐ型層よりも光学
的バンドギャップ幅が大きく、第２層目以降は上記ｐ型
層から上記ｉ型層に向って順次第１層目の光学的バンド
ギャップ幅よりも次第に光学的バンドギャップ幅が小さ
くなるようになっていることを特徴とする特許請求の範
囲第１項記載のアモルファスシリコン太陽電池。 ３、上記ｐ層がｐ型水素含有アモルファス炭化シリコン
（ａ−ＳｉＣ：Ｈ）であり、上記バッファ層がｉ型ａ−
ＳｉＣ：Ｈであることを特徴とする特許請求の範囲第１
もしくは２項記載のアモルファスシリコン太陽電池。 ４、上記多層薄膜のうちの最も小さいバンドギャップ幅
が上記ｉ型層のバンドギャップ幅より大きいことを特徴
とする特許請求の範囲第２項記載のアモルファスシリコ
ン太陽電池。[Claims] 1. In an amorphous silicon solar cell having a pin structure consisting of a p-type layer, an i-type layer, and an n-type layer, there is a layer between the p-type layer and the i-type layer that is larger than the p-type layer. An amorphous silicon solar cell characterized by having a buffer layer including at least a thin film with a large optical bandgap width. 2. The buffer layer has a multilayer thin film of two or more layers, the first layer on the p-type layer side of the multilayer thin film has a larger optical bandgap width than the p-type layer, and the second and subsequent layers have Claim 1 characterized in that the optical bandgap width is gradually smaller from the optical bandgap width of the first layer from the p-type layer to the i-type layer. The amorphous silicon solar cell described in . 3. The p layer is p-type hydrogen-containing amorphous silicon carbide (a-SiC:H), and the buffer layer is i-type amorphous silicon carbide (a-SiC:H).
Claim 1 characterized in that it is SiC:H.
Or an amorphous silicon solar cell according to item 2. 4. The amorphous silicon solar cell according to claim 2, wherein the smallest bandgap width of the multilayer thin film is larger than the bandgap width of the i-type layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61156040A JPS6313380A (en) | 1986-07-04 | 1986-07-04 | Amorphous silicon solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61156040A JPS6313380A (en) | 1986-07-04 | 1986-07-04 | Amorphous silicon solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6313380A true JPS6313380A (en) | 1988-01-20 |
Family
ID=15619002
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61156040A Pending JPS6313380A (en) | 1986-07-04 | 1986-07-04 | Amorphous silicon solar cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6313380A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0461385A (en) * | 1990-06-29 | 1992-02-27 | Sharp Corp | Amorphous solar cell |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57160175A (en) * | 1981-03-28 | 1982-10-02 | Semiconductor Energy Lab Co Ltd | Photoelectric converter |
| JPS60242682A (en) * | 1984-05-16 | 1985-12-02 | Hitachi Maxell Ltd | Semiconductor photoelectric conversion device |
| JPS62106670A (en) * | 1985-11-05 | 1987-05-18 | Kanegafuchi Chem Ind Co Ltd | Semiconductor device |
-
1986
- 1986-07-04 JP JP61156040A patent/JPS6313380A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57160175A (en) * | 1981-03-28 | 1982-10-02 | Semiconductor Energy Lab Co Ltd | Photoelectric converter |
| JPS60242682A (en) * | 1984-05-16 | 1985-12-02 | Hitachi Maxell Ltd | Semiconductor photoelectric conversion device |
| JPS62106670A (en) * | 1985-11-05 | 1987-05-18 | Kanegafuchi Chem Ind Co Ltd | Semiconductor device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0461385A (en) * | 1990-06-29 | 1992-02-27 | Sharp Corp | Amorphous solar cell |
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