JPS63127534A - Resist separation equipment - Google Patents

Abstract

PURPOSE:To enable separating a resist which has difficulty of being separated by combining a mechanical separation and a chemical separation using a brush and a separating liquid. CONSTITUTION:A wafer chuck table 17 for placing a sample (wafer) 11 in a cup 12 is turned by a spin motor 16, a brush 13 which is brought into contact with the sample 11 at a controlled pressure is turned at a different speed from the rotation speed of the sample, the brush 13 is turned in contact with the sample 13 in correspondence to the rotation of the spin motor 16 and is moved to one direction, and upon reaching the end, it is separated from the sample 11 and is washed. This perfectly removes the resist film on a wafer even if a degenerated layer is formed on the surface of the resist film and the operation of a wafer process can be improved.

Description

[Detailed Description of the Invention] [Summary] This is an apparatus that uses a brush and a stripping solution to remove resist that is difficult to remove by combining mechanical stripping and chemical stripping.

[Conventional technology]

In the wafer processing step (wafer process) in the manufacture of semiconductor devices, the underlying insulating film, semiconductor film,
Etching of a metal film or the like is performed. After etching is completed, the resist film used as a mask must be removed from the wafer surface. Conventional resist stripping can be broadly divided into dry (ashing, ashing) methods and wet methods (wet processing methods).The wet method uses liquid chemicals such as hot concentrated sulfuric acid, hydrogen peroxide, and organic Solvents, thermal organic acids, etc. were appropriately selected and used depending on the underlying material.

Dry methods include plasma asher-1 optical asher (using deep ultraviolet rays), and the like. For example, the ashing effect of the resist film by 02 plasma is caused by the chemical reaction between atomic oxygen (0) generated in 02 plasma and the polymer resin, which causes the polymer resin to become lower in molecular weight, and by the oxidation of the lower molecular resin.
It uses decomposition and vaporization into O2 and HJ.

(Problems to be Solved by the Invention) Both the dry method and the wet method described above have advantages and disadvantages, and in order to completely remove the resist, it is necessary to use various combinations of both methods, which makes the process complicated. There is a problem that requires a lot of time and effort.

Recently, with the progress of miniaturization of semiconductor devices, it has become necessary not only to remove the resist but also to use a dry process for etching. (reactive ion
Etching.

In the case of RIE). Furthermore, ion implantation is increasingly being used to locally introduce impurities onto the wafer surface using a resist film as a mask, and in this case, the resist film used as a mask is exposed to high-dose ion beams at high temperatures. exposed. The resist film subjected to such irradiation is
As shown in the cross-sectional view of FIG. 3, a hard degraded layer is formed on the surface, and the existence of such a degraded layer makes stripping the resist even more difficult.

In FIG. 3, 31 is a wafer, 32 is a pattern formed on the wafer, 33 is a resist film, and 34 is a degraded layer. Because the altered layer 34 is formed, the resist film 33, which is originally easily peeled off, becomes difficult to remove.

The present invention was created in view of these points, and an object of the present invention is to provide an apparatus capable of peeling off a resist film having a deteriorated layer formed on its surface.

c) Means for Solving Problems] FIG. 2 is a diagram showing the principle of the present invention. In the figure, 11 is a sample such as a wafer rotating in the direction of the arrow, and 12 is a resist stripping device in which the wafer 11 is placed. A cup of the apparatus, 13 a brush that rotates asynchronously with respect to the wafer in either arrow direction, 14 a spray, and 15 a stripping solution.

The apparatus of the invention moves a brush 13, which itself rotates at a speed asynchronous to the rotational speed of the wafer 11, in the illustrated X direction;
The brush is brought into contact with the wafer 11 to peel off the resist on the wafer.

[Effect]

When the rotating brush 13 contacts the wafer 11, the brush 13 removes or even damages the degraded layer 34 of the resist as shown in FIG.

When the deteriorated layer 34 is scratched, the stripping liquid 15 enters into the resist film 33 and dissolves the resist film 33.
The resist film 33 is completely removed.

〔Example〕

Embodiments of the present invention will be described in detail below with reference to the drawings.

FIGS. 1(a) and 1(bl) are front sectional views of an embodiment of the present invention. Referring to FIGS. The wafer 11 is placed and rotated as described above (1?, P, M, = 500).

A stripping liquid (stripper liquid) 15 and a rinsing liquid are sprayed onto the wafer 11 from a spray 14 and a rinsing spray 18, respectively. The rinsing spray 18 is heated by a heater 14a, and the stripper liquid is maintained at a constant temperature, for example, 80°C. Sprays 14 and 18 are
They are connected to tanks 14b and 18a for stripper liquid and rinse liquid, respectively. The liquid in the cup 12 is discharged from the drain 12a.

The pressure applied to the wafer 11 by the brush 13 is controlled by a pressure weight 19, and the brush 13 is rotated by, for example, R, P, M = 200 rotations by a belt 21 that transmits rotational force given by a motor 20 for rotating the brush. to do. The belt 21 is the rotating shaft 20a of the motor 20.

It is arranged so as to reach the rotating shaft 13a of the brush 13 via the roller 20b.

Belt 21 also includes links 2 connected to binions 22.
It engages with a roller 24 provided on the opposite side from the pinion No. 3,
The rollers 20b, 24 and the rotating shaft 13a of the brush are always arranged on the same line. The gear of the binion 22 is engaged by the cylinder 25 with the gear of the rack 26 which reciprocates in the direction of the arrow in FIG.
It is movable between the position shown by the solid line and the position shown by the dotted line.

As shown in FIG. 1(a), a brush cleaning tank 27 is arranged outside and above the cup 12, and a cleaning liquid is supplied to it from a cleaning liquid supply nozzle 28.

In operation, with the brush 13 in the position shown by the solid line in FIGS. 1(a) and 1(b), the wafer 11 starts rotating in the direction of the arrow in FIG. 2, causing the brush rotation motor 20 to rotate. First, the brush 13 is rotated in one of the arrow directions at a speed slower than the rotational speed of the wafer.

At the same time, the cylinder 25, which operates in accordance with the rotation of the spin motor 16, does not move to the left when looking at the rack 26 in FIG. 1(b). During this time, the brush 13 comes into contact with the resist film on the wafer, and at the same time the stripper liquid 15 is sprayed onto the wafer. When the rack 26 is at the leftmost position, the belt 21 reaches the position shown by the dotted line in FIG. The cleaning liquid enters the tank 27 and is supplied from the cleaning liquid supply nozzle 28 to clean the brush 13, which itself is rotating.The waste liquid is discharged from the drain 27a.

Next, the spin motor 16 is rotated in the reverse direction, and the brush returns to the position shown by the solid line in FIG.
A rinsing liquid is supplied from step 8 to clean the wafer. The brush 13, which has returned to the position indicated by the solid line in FIG. 1, repeats the above-described operation on the next wafer.

When the brush 13 removes all of the degraded layer, the stripper liquid dissolves and removes the undegraded resist under the degraded layer. Even if the damaged layer is not removed, if the damaged layer is scratched with a brush, the stripper liquid penetrates into the resist film through the scratches and dissolves the resist, so that the damaged layer is removed by the principle of lift-off.

Note that the mechanism shown in FIG. 1 is one example, and the scope of the present invention is not limited to the illustrated example. As shown in FIG. 2, the mechanism shown in FIG. The key point of the present invention is that the brush is placed in contact with the resist film on the wafer, and at the same time the brush is provided with a spray that dissolves the resist with the stripper solution. Another possible method is to rotate the .

〔Effect of the invention〕

As described above, according to the present invention, the resist film on the wafer is completely removed even if a degraded layer is formed on the surface thereof, which is effective in improving the workability of the wafer process.

[Brief explanation of the drawing]

Fig. 1 is a diagram of an embodiment of the present invention, fa) and fb) are a plan view and a front sectional view of the embodiment, Fig. 2 is a diagram showing the principle of the invention, and Fig. 3 is a cross section of a resist film. It is a diagram. 1 to 3, 11 is a wafer, 12 is a cup, 12a is a drain, 13 is a brush, 13a is a rotating shaft of the brush, 14 is a spray, 14a is a heater, 14b is a stripper liquid tank, 15 is a stripper liquid , 16 is a spin motor, 17 is a wafer chuck stand (N empty chuck), 18 is a rinsing spray, 18a is a rinsing liquid tank, 19 is a pressure meter, 20 is a brush rotation motor, 20a is a rotation shaft of the motor 20 , 20b is a roller, 21 is a belt, 22 is a pinion, 23 is a link, 24 is a roller, 25 is a cylinder, 26 is a rack, 27 is a brush cleaning tank, 27a is a drain, and 28 is a cleaning liquid supply nozzle. Agent: Moto Kuki, Patent Attorney: Akifuku Agent: Yoshio Osuga

Claims (1)

[Claims] This is an apparatus for removing resist on a sample (11), and a wafer chuck table (17) for placing the sample (11) in a cup (12) is rotated by a spin motor (16). , a brush (13) that contacts the sample (11) with controlled pressure.
) is rotated at a speed asynchronous to the rotational speed of the sample, and the brush (13) moves in one direction while rotating in contact with the sample (11) in response to the rotation of the spin motor (16); After the movement is completed, the resist stripper is separated from the sample (11) and cleaned, and then the above-mentioned movement is repeated.