TWI762550B - Substrate cleaning method, substrate cleaning system and recording medium - Google Patents

Abstract

This invention aims to promote the peeling of a treatment film from a substrate. A substrate cleaning method according to this invention comprises a film formation treatment liquid supply step, a peeling treatment liquid supply step and a dissolution treatment liquid supply step. In the film formation treatment liquid supply step, film formation treatment liquid containing volatile constituent and being used for forming a film on the substrate is supplied to the substrate. In the peeling treatment liquid supply step, pure water used as peeling treatment liquid for peeling, from the substrate, a treatment film formed from the film formation treatment liquid that solidifies or hardens on the substrate due to the vaporization of volatile constituent, is supplied to the treatment film. After the peeling treatment liquid supply step, in the dissolution treatment liquid supply step, dissolution treatment liquid for dissolving the treatment film is supplied to the treatment film. And, in the peeling treatment liquid supply step, after supplying a mixture liquid obtained by mixing pure water with a liquid having a surface tension smaller than pure water, pure water used as a peeling treatment liquid is supplied to the treatment film.

Description

Substrate cleaning method, substrate cleaning system and recording medium

The embodiments disclosed in this case relate to a substrate cleaning method, a substrate cleaning system, and a recording medium.

Conventionally, a substrate cleaning apparatus for removing particles adhering to a substrate such as a silicon wafer or a compound semiconductor wafer has been used.

For example, Patent Document 1 discloses a substrate cleaning method in which a process film is formed on the surface of the substrate, and the process film is peeled off in a "film" state to remove particles on the substrate together with the process film. [Prior Art Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2015-119164

[The problem to be solved by the invention]

However, the technique described in the above-mentioned Patent Document 1 has room for further improvement in terms of promoting peeling of the treatment film.

One aspect of the embodiment of the present application is to provide a substrate cleaning method, a substrate cleaning system, and a recording medium, which can promote the peeling of the treatment film from the substrate. [Means of Solving Problems]

A substrate cleaning method according to an aspect of an embodiment of the present invention includes a film-forming treatment liquid supplying step, a peeling treatment liquid supplying step, and a dissolution treatment liquid supplying step. In the film formation treatment liquid supply step, a film formation treatment liquid containing volatile components for forming a film on the substrate is supplied to the substrate. In the peeling treatment liquid supply step, pure water is supplied as a peeling treatment liquid for peeling the treatment film from the substrate to a treatment film formed by curing or curing the film-forming treatment liquid on the substrate due to volatilization of volatile components. In the dissolving treatment liquid supply step, after the peeling treatment liquid supply step, the dissolving treatment liquid for dissolving the treatment film is supplied to the treatment film. In addition, in the peeling treatment liquid supply step, a mixed liquid obtained by mixing a liquid having a surface tension smaller than pure water and pure water is supplied to the treatment film, and then pure water is supplied as a peeling treatment liquid. [Effect of invention]

According to one aspect of the embodiment of the present invention, the peeling of the processing film from the substrate can be accelerated.

Hereinafter, embodiments of the substrate cleaning method, substrate cleaning system, and recording medium disclosed in the present application will be described in detail with reference to the accompanying drawings. In addition, this invention is not limited to embodiment shown below.

(First Embodiment) <Contents of Substrate Cleaning Method> First, the contents of the substrate cleaning method according to the first embodiment will be described with reference to FIGS. 1A to 1E . 1A to 1E are explanatory diagrams of a substrate cleaning method according to the first embodiment.

As shown in FIG. 1A , in the substrate cleaning method according to the first embodiment, the pattern forming surface of a substrate (hereinafter referred to as “wafer W”) such as a silicon wafer or a compound semiconductor wafer is supplied for cleaning the wafer. The above-mentioned treatment liquid containing volatile components for forming a film (hereinafter referred to as "film-forming treatment liquid").

The film-forming treatment liquid supplied to the pattern-forming surface of the wafer W shrinks in volume due to volatilization of volatile components, and cures or hardens to become a treatment film. Therefore, the pattern formed on the wafer W or the particles P attached to the pattern are in a state covered with the processing film (see FIG. 1B ). In addition, the term "curing" here means solidification, and the term "hardening" means that molecules are connected to each other to be polymerized (for example, cross-linking, polymerization, etc.).

Next, as shown in FIG. 1B , a peeling treatment liquid is supplied to the treatment film on the wafer W. As shown in FIG. The so-called peeling processing liquid is a processing liquid for peeling the aforementioned processing film from the wafer W. As shown in FIG. In the substrate cleaning method according to the first embodiment, pure water at normal temperature (about 23 to 25 degrees) is used as the stripping treatment liquid.

The pure water supplied to the processing film penetrates into the processing film and reaches the interface of the wafer W. Furthermore, the pure water reaching the interface of the wafer W penetrates into the interface of the wafer W, that is, the pattern forming surface.

As described above, since the pure water as the peeling treatment liquid permeates between the wafer W and the treatment film, the treatment film is peeled off from the wafer W in the state of a "film", and particles adhering to the pattern forming surface are accompanied by this. P is peeled off from wafer W together with the handle film (see FIG. 1C ).

In addition, the film-forming treatment liquid causes volume shrinkage due to volatilization of volatile components, and the particles P attached to the pattern or the like can be removed from the pattern or the like by the strain (tensile force) generated by the volume shrinkage.

Next, to the processing film peeled off from the wafer W, a dissolving processing liquid for dissolving the processing film is supplied. Thereby, the treatment film is dissolved, and the particles P that have entered the treatment film are in a state of floating in the dissolution treatment liquid (see FIG. 1D ). After that, the particles P are removed from the wafer W by washing the dissolved treatment liquid or the dissolved treatment film with pure water or the like (see FIG. 1E ).

As described above, in the substrate cleaning method according to the first embodiment, the processing film formed on the wafer W is peeled off from the wafer W in the state of a "film", whereby the particles P attached to the pattern or the like and the processing film are separated. removed from wafer W together.

Therefore, according to the substrate cleaning method of the first embodiment, since particle removal is performed without chemical action, erosion of the underlying film due to etching action or the like can be suppressed.

Moreover, according to the substrate cleaning method of the first embodiment, since the particles P can be removed with a weaker force than the conventional substrate cleaning method using physical force, pattern collapse can also be suppressed.

Furthermore, according to the substrate cleaning method of the first embodiment, the particles P with small particle diameters, which are difficult to remove by the conventional substrate cleaning method using physical force, can be easily removed.

Furthermore, in the substrate cleaning method according to the first embodiment, after the process film is formed on the wafer W, the entirety of the process film is removed from the wafer W without performing pattern exposure. Therefore, the wafer W after cleaning is in the state before the film-forming treatment liquid is applied, that is, the state in which the pattern forming surface is exposed.

Here, as the film-forming treatment liquid, for example, a top coating liquid, the "substrate cleaning composition" described in Japanese Patent Laid-Open No. 2016-36012, and the like are used. However, since the treatment film formed from these film-forming treatment liquids has hydrophobicity, even if pure water is supplied to the treatment film as a stripping treatment liquid, the pure water is repelled on the surface of the treatment film, and it is difficult to make pure water Efficient penetration into the treatment membrane.

Therefore, according to the substrate cleaning method of the first embodiment, before supplying pure water as the stripping treatment liquid (that is, between the treatment shown in FIG. 1A and the treatment shown in FIG. 1B ), the treatment film is supplied with The surface tension is smaller than pure water, which is a mixed liquid obtained by mixing a liquid with a smaller surface tension and pure water.

Since the surface tension of this mixed solution is lower than that of pure water, it is not easily repelled on the surface of the treatment membrane and easily penetrates into the treatment membrane. By allowing the mixed solution to permeate into the treatment membrane, a flow path of pure water is formed in the treatment membrane. Thereby, when the pure water as the peeling processing liquid is supplied to the processing film later, the pure water can be made to reach the pattern forming surface early.

As described above, according to the substrate cleaning method of the first embodiment, before supplying pure water as a stripping treatment liquid to the treatment film, a liquid having a surface tension smaller than that of pure water is supplied to the treatment film and mixed with pure water The obtained mixed solution allows pure water to easily permeate into the treatment membrane. Thereby, peeling of the handle film from the wafer W can be promoted.

<Configuration of Substrate Cleaning System> Next, the configuration of the substrate cleaning system according to the first embodiment will be described with reference to FIG. 2 . FIG. 2 is a schematic diagram showing the constitution of the substrate cleaning system according to the first embodiment. Hereinafter, in order to clarify the positional relationship, the X-axis, the Y-axis, and the Z-axis which are perpendicular to each other are defined, and the Z-axis positive direction is shown as the vertical direction.

As shown in FIG. 2 , the substrate cleaning system 1 includes a loading and unloading station 2 and a processing station 3 . Both the carry-in and carry-out station 2 and the processing station 3 are installed adjacent to each other.

The carry-in and carry-out station 2 includes a carrier placement unit 11 and a conveyance unit 12 . A plurality of transport containers (hereinafter referred to as "carriers C") capable of accommodating a plurality of wafers W in a horizontal state are mounted on the carrier mounting portion 11 .

The conveyance portion 12 is provided adjacent to the carrier placement portion 11 . Inside the conveyance unit 12, a board conveyance device 121 and a transfer unit 122 are provided.

The substrate transfer device 121 has a wafer holding mechanism for holding the wafer W. Further, the substrate transfer device 121 is movable in the horizontal and vertical directions, and rotates around the vertical axis to transfer the wafer W between the carrier C and the transfer unit 122 using the wafer holding mechanism.

The processing station 3 is provided adjacent to the conveyance unit 12 . The processing station 3 includes a conveyance unit 13 and a plurality of substrate cleaning apparatuses 14 . A plurality of substrate cleaning apparatuses 14 are arranged side by side on both sides of the conveyance unit 13 .

The inside of the conveyance part 13 is equipped with the board|substrate conveyance apparatus 131. The substrate transfer device 131 has a wafer holding mechanism for holding the wafer W. The substrate transfer device 131 is movable in the horizontal and vertical directions, and rotates around the vertical axis to transfer the wafer W between the transfer unit 122 and the substrate cleaning device 14 using the wafer holding mechanism.

The substrate cleaning apparatus 14 is an apparatus for performing the substrate cleaning process according to the above-mentioned substrate cleaning method. The specific configuration of the substrate cleaning apparatus 14 will be described later.

Moreover, the substrate cleaning system 1 includes a control device 4 . The control device 4 is a device that controls the operation of the substrate cleaning system 1 . The control device 4 is, for example, a computer, and includes a control unit 15 and a storage unit 16 . The storage unit 16 stores programs for controlling various processes such as the substrate cleaning process. The control unit 15 controls the operation of the substrate cleaning system 1 by reading and executing the program stored in the storage unit 16 . The control unit 15 is, for example, a CPU (Central Processing Unit), an MPU (Micro Processor Unit), or the like, and the storage unit 16 is, for example, a ROM (Read Only Memory), a RAM (Random Access Memory), or the like.

In addition, this program may be stored in a computer-readable recording medium, or may be installed in the storage unit 16 of the control device 4 from the recording medium. As the computer-readable recording medium, there are, for example, a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magneto-optical disk (MO), a memory card, and the like.

In the substrate cleaning system 1 configured as described above, first, the wafer W is taken out from the carrier C by the substrate transfer device 121 of the transfer station 2 , and the taken wafer W is placed on the transfer unit 122 . The wafer W placed on the transfer unit 122 is taken out from the transfer unit 122 by the substrate transfer device 131 of the processing station 3 , and carried into the substrate cleaning device 14 , and the substrate cleaning device 14 performs a substrate cleaning process. The cleaned wafer W is unloaded from the substrate cleaning device 14 by the substrate transfer device 131 , placed on the transfer unit 122 , and then returned to the carrier C by the substrate transfer device 121 .

<Configuration of Substrate Cleaning Apparatus> Next, the configuration of the substrate cleaning apparatus 14 will be described with reference to FIG. 3 . FIG. 3 is a schematic diagram showing the structure of the substrate cleaning apparatus 14 according to the first embodiment.

As shown in FIG. 3 , the substrate cleaning apparatus 14 includes a chamber 20 , a substrate holding mechanism 30 , a liquid supply unit 40 , and a recovery cup 50 .

The chamber 20 accommodates the substrate holding mechanism 30 , the liquid supply unit 40 , and the recovery cup 50 . On the ceiling portion of the chamber 20, an FFU (Fan Filter Unit) 21 is installed. The FFU 21 forms a downflow in the chamber 20 .

The FFU 21 is connected to the downflow gas supply source 23 via the valve 22 . The FFU 21 ejects the downflow gas (eg, dry air) supplied from the downflow gas supply source 23 into the chamber 20 .

The substrate holding mechanism 30 includes a rotation holding portion 31 , a support portion 32 , and a driving portion 33 . The rotation holding portion 31 is provided in substantially the center of the chamber 20 . On the top surface of the rotating holding portion 31, a holding member 311 for holding the wafer W from the side is provided. By this holding member 311 , the wafer W is held horizontally in a state of being slightly spaced from the top surface of the rotating holding portion 31 .

The strut portion 32 is a member extending in the vertical direction, the base end portion is rotatably supported by the driving portion 33 , and the front end portion horizontally supports the rotation holding portion 31 . The drive part 33 rotates the support part 32 around the vertical axis.

The substrate holding mechanism 30 uses the driving part 33 to rotate the support part 32 to rotate the rotating holding part 31 supported by the support part 32 , thereby rotating the wafer W held by the rotating holding part 31 .

The liquid supply unit 40 supplies various processing liquids to the wafer W held by the substrate holding mechanism 30 . The liquid supply unit 40 includes a plurality of (here, four) nozzles 41a to 41d, an arm portion 42 for horizontally supporting the nozzles 41a to 41d, and a rotation elevating mechanism 43 for rotating and raising and lowering the arm portion 42.

The nozzle 41a is connected to the chemical solution supply source 45a via the valve 44a and the flow rate regulator 46a. The nozzle 41b is connected to the film formation treatment liquid supply source 45b via the valve 44b and the flow rate regulator 46b. The nozzle 41c is connected to the stripping treatment liquid supply source 45c via the valve 44c and the flow rate regulator 46c. The nozzle 41d is connected to the dissolution treatment liquid supply source 45d via the valve 44d and the flow rate regulator 46d.

The chemical liquid supplied from the chemical liquid supply source 45a is ejected from the nozzle 41a. As the chemical liquid, for example, DHF (diluted hydrofluoric acid), SC1 (a mixture of ammonia water/hydrogen peroxide solution/water), DSP (Diarrhetic Shellfish Poisoning) and the like can be used.

The film formation treatment liquid supplied from the film formation treatment liquid supply source 45b is ejected from the nozzle 41b. As the film-forming treatment liquid, for example, a top coating liquid, the "substrate cleaning composition" described in Japanese Patent Laid-Open No. 2016-36012, and the like can be used. In addition, the top coating film (an example of a treatment film) formed from the top coating liquid is a protective film applied on the top surface of the photoresist in order to prevent the immersion liquid from penetrating into the photoresist. In addition, the so-called immersion liquid is used for liquid immersion exposure in, for example, a lithography step.

The stripping process liquid supplied from the stripping process liquid supply source 45c is ejected from the nozzle 41c. The peeling treatment liquid is DIW as described above.

The dissolving treatment liquid supplied from the dissolving treatment liquid supply source 45d is ejected from the nozzle 41d. As the dissolution treatment liquid, for example, IPA (isopropyl alcohol), diluent, MIBC (4-methyl-2-pentanol), toluene, acetates, alcohols, glycols (propylene glycol monomethyl ether) can be used and other organic solvents.

Here, as the dissolution treatment liquid, IPA heated to a predetermined temperature (for example, 65° C.) is used.

In addition, as the dissolution treatment liquid, IPA at room temperature may be used. Moreover, as a dissolution process liquid, it is not limited to an organic solvent, For example, an alkaline developing solution or an acidic developing solution can be used. The alkaline developer may be a developer containing at least one of ammonia water, tetramethylammonium hydroxide (TMAH: Tetra Methyl Ammonium Hydroxide) and other quaternary ammonium hydroxide aqueous solutions, and choline aqueous solutions. As the acidic developer, acetic acid, formic acid, glycolic acid, or the like can be used.

The recovery cup 50 is arranged so as to surround the rotary holding portion 31 , and the processing liquid scattered from the wafer W is collected and collected by the rotation of the rotary holding portion 31 . A liquid discharge port 51 is formed at the bottom of the recovery cup 50 , and the processing liquid collected by the recovery cup 50 is discharged from the liquid discharge port 51 to the outside of the substrate cleaning apparatus 14 . In addition, an exhaust port 52 is further formed at the bottom of the recovery cup 50 , and the exhaust port 52 exhausts the downflow gas supplied from the FFU 21 to the outside of the substrate cleaning apparatus 14 .

<Specific Operation of Substrate Cleaning System> Next, with reference to FIG. 4 , the specific operation of the substrate cleaning apparatus 14 will be described. FIG. 4 is a flowchart showing the processing sequence of the substrate cleaning process performed by the substrate cleaning system 1 according to the present embodiment. Each device included in the substrate cleaning system 1 performs each processing sequence shown in FIG. 4 in accordance with the control of the control unit 15 .

As shown in FIG. 4, in the substrate cleaning apparatus 14, a substrate carrying-in process is first performed (step S101). In this substrate carrying process, the wafer W carried into the chamber 20 by the substrate carrying device 131 (see FIG. 2 ) is held by the holding members 311 of the substrate holding mechanism 30 . At this time, the wafer W is held by the holding member 311 with the patterned surface facing upward. Then, the rotation holding part 31 is rotated by the driving part 33 . Thereby, the wafer W rotates together with the rotary holding portion 31 in a state of being held horizontally by the rotary holding portion 31 . The number of revolutions of the wafer W is set to, for example, 1000 rpm.

Next, chemical solution processing is performed in the substrate cleaning apparatus 14 (step S102). In the chemical liquid processing, first, the nozzle 41 a of the liquid supply unit 40 is positioned above the center of the wafer W. As shown in FIG. After that, by opening the valve 44a for a predetermined time, a chemical solution such as DHF is supplied to the patterning surface of the wafer W on which the photoresist is not formed. The chemical solution supplied to the wafer W is spread on the patterned surface of the wafer W due to the centrifugal force accompanying the rotation of the wafer W.

Next, the nozzle 41c of the liquid supply unit 40 is positioned above the center of the wafer W. As shown in FIG. After that, DIW is supplied to the patterning surface of the wafer W by opening the valve 44c for a predetermined time. The DIW supplied to the wafer W spreads on the patterning surface of the wafer W due to the centrifugal force accompanying the rotation of the wafer W. Thereby, the chemical solution remaining on the wafer W is washed away by DIW.

Next, a pre-wetting process is performed in the substrate cleaning apparatus 14 (step S103). In the pre-wetting process, the nozzle 41d of the liquid supply unit 40 is positioned above the center of the wafer W. As shown in FIG. Then, the IPA is supplied to the patterning surface of the wafer W by opening the valve 44d for a predetermined time. The IPA supplied to the wafer W spreads on the patterning surface of the wafer W due to the centrifugal force accompanying the rotation of the wafer W.

Since the top coating liquid or the substrate cleaning composition, which is a film-forming treatment liquid, has high hydrophobicity, even if the film-forming treatment liquid is supplied to the wafer W after chemical treatment, it will remain on the wafer W. The DIW on the surface is repelled, so that it takes a long time to form a liquid film of the film-forming treatment liquid on the surface of the wafer W. FIG.

Therefore, in the substrate cleaning system 1 according to the first embodiment, IPA is supplied to the wafer W after the chemical treatment, and DIW remaining in the wafer W after the chemical treatment is replaced with IPA. As described above, by coating the wafer W with IPA having an affinity for the film-forming treatment liquid in advance, the film-forming treatment liquid can be easily supplied in the film-forming treatment liquid supply process (step S104 ) to be described later. It spreads on the top surface of the wafer W and becomes easy to enter the gaps of the patterns. Therefore, the usage-amount of a film-forming process liquid can be reduced, and the particle|grains P which have entered the gap|interval of a pattern can be removed more reliably. In addition, shortening of the processing time of the film-forming processing liquid supply processing can also be achieved.

Here, in the pre-wetting process, IPA is supplied to the wafer W, but the processing liquid used for the pre-wetting process is not limited to IPA. As the treatment liquid for the pre-wetting treatment, organic solvents other than IPA such as ethanol and acetone can be used.

Next, a film formation treatment liquid supply process is performed in the substrate cleaning apparatus 14 (step S104). In the film formation treatment liquid supply process, the nozzle 41 b of the liquid supply unit 40 is positioned above the center of the wafer W. As shown in FIG. After that, by opening the valve 44b for a predetermined period of time, the film-forming treatment liquid is supplied to the patterning surface of the wafer W. As shown in FIG.

The film-forming treatment liquid supplied to the wafer W spreads on the surface of the wafer W due to the centrifugal force accompanying the rotation of the wafer W. Thereby, a liquid film of the film-forming treatment liquid is formed on the patterning surface of the wafer W. As shown in FIG. The liquid film is preferably formed to cover at least the pattern on the wafer W (eg, 45 nm or more).

Next, a drying process is performed in the substrate cleaning apparatus 14 (step S105). In this drying process, for example, by increasing the rotational speed of the wafer W for a predetermined time, the film-forming treatment liquid is dried. Thereby, for example, part or all of the organic solvent contained in the film-forming treatment liquid is vaporized, and the solid content contained in the film-forming treatment liquid is cured or hardened, thereby forming a treatment film on the patterned surface of the wafer W.

In addition, the drying process in step S105 may be, for example, a process of forming a decompressed state in the chamber 20 by a decompression device not shown, or may be a process of reducing the humidity in the chamber 20 by using downflow gas supplied from the FFU 21. deal with. Moreover, the film-forming process liquid can also be hardened or hardened by these processes.

In addition, the substrate cleaning apparatus 14 may allow the wafer W to stand by until the film-forming treatment liquid is naturally cured or cured. In addition, the rotation of the wafer W is stopped, or the wafer W is rotated at a number of revolutions "so as to prevent the film-forming treatment liquid from being thrown off and the surface of the wafer W is not exposed", thereby curing or curing the film-forming treatment liquid. Can.

Next, a peeling process is performed in the substrate cleaning apparatus 14 (step S106). In this peeling process, the processing film formed on the wafer W is peeled off from the wafer W. As shown in FIG. The specific content of this peeling process is mentioned later.

Next, a dissolving process liquid supply process is performed in the substrate cleaning apparatus 14 (step S107 ). In the dissolving liquid supply process, the nozzle 41d of the liquid supply part 40 is positioned above the center of the wafer W. As shown in FIG. After that, by opening the valve 44d for a predetermined time, IPA is supplied to the process film peeled off from the wafer W. The IPA supplied to the wafer W spreads on the surface of the wafer W due to the centrifugal force accompanying the rotation of the wafer W. Thereby, the treatment film is dissolved.

In the substrate cleaning system 1 according to the first embodiment, since IPA heated to a predetermined temperature is used as the dissolving treatment liquid, the treatment film peeled from the wafer W can be dissolved in a shorter time.

Next, a rinsing process is performed in the substrate cleaning apparatus 14 (step S108). In the rinsing process, the nozzle 41c of the liquid supply unit 40 is positioned above the center of the wafer W. As shown in FIG. Then, DIW is supplied to the process film peeled off from the wafer W by opening the valve 44c for a predetermined time. The DIW supplied to the wafer W spreads on the surface of the wafer W due to the centrifugal force accompanying the rotation of the wafer W. Thereby, the dissolved process film or the particles P floating in the IPA are removed from the wafer W.

Next, a drying process is performed in the substrate cleaning apparatus 14 (step S109). In the drying process, for example, by increasing the rotational speed of the wafer W for a predetermined time, the DIW remaining on the surface of the wafer W is thrown off, and the wafer W is dried.

In addition, in the substrate cleaning apparatus 14, instead of the processes of the above-mentioned steps S108 and S109, the following process may be performed: subsequent to the dissolving treatment liquid supply process of the step S107, the IPA is supplied to the rotating wafer W from the nozzle 41d After that, the wafer W is rotated at a high speed, and the wafer W is dried.

Next, a substrate unloading process is performed in the substrate cleaning apparatus 14 (step S110). In this substrate removal process, the wafer W is removed from the chamber 20 of the substrate cleaning device 14 by the substrate transfer device 131 (see FIG. 2 ). Then, the wafer W is accommodated in the carrier C placed on the carrier placement unit 11 via the transfer unit 122 and the substrate conveyance device 121 . When this substrate unloading process ends, the substrate cleaning process performed on one wafer W ends.

Next, an example of a specific procedure of the peeling process in step S106 will be described with reference to FIG. 5 . FIG. 5 is a flowchart showing an example of the processing sequence of the peeling process.

As shown in FIG. 5 , in the substrate cleaning apparatus 14, a DIW packaging process is first performed (step S201). In the DIW packaging process, the nozzle 41c of the liquid supply unit 40 is positioned above the center of the wafer W. As shown in FIG. After that, DIW is supplied to the process film formed on the wafer W by opening the valve 44c for a predetermined time. The DIW supplied to the processing film on the wafer W spreads on the surface of the processing film due to the centrifugal force accompanying the rotation of the wafer W. Thereby, a liquid film of DIW is formed on the processing film.

In addition, the DIW packaging process is performed in order to form a liquid film of DIW on the process film. Therefore, the supply time of DIW in the DIW containing process is set to be shorter than that of the subsequent mixed solution supply process (step S202 ) or the DIW supply process (step S203 ). For example, the supply time of DIW in the DIW packaging process is 2 sec. In addition, in the DIW loading process, the wafer W may be rotated at a lower speed than that in the subsequent mixed solution supply process (step S202 ) or the DIW supply process (step S203 ).

Next, a mixed solution supply process is performed in the substrate cleaning apparatus 14 (step S202). In the mixed liquid supply process, for example, the intermediate position between the nozzle 41c and the nozzle 41d of the liquid supply unit 40 is positioned above the center of the wafer W. After that, by opening the valve 44c and the valve 44d for a predetermined time, DIW and IPA are simultaneously supplied to the processing film on the wafer W. The DIW and IPA supplied to the processing film on the wafer W are mixed while being diffused on the surface of the processing film by the centrifugal force accompanying the rotation of the wafer W. Thereby, a liquid film of a mixed liquid of both DIW and IPA is formed on the processing film.

The surface tension of IPA is 20.8 mN/m at 20° C., which is smaller than that of DIW (72.75 mN/m). Since the surface tension of the mixture of IPA and DIW is smaller than that of DIW, it is not easy to be repelled on the surface of the treatment film, and it is easy to penetrate into the treatment film. Therefore, the flow path of pure water can be formed early in the treatment membrane.

Here, the IPA concentration of the mixed solution is preferably less than 25%. The reason is that when the concentration of IPA is 25% or more, the treated film is dissolved by the mixed solution, and the phenomenon of peeling of the treated film in the state of "film" does not occur, resulting in a decrease in the particle removal rate. The IPA concentration of the mixed solution is preferably below 7.5%.

The control unit 15 controls the flow rate regulators 46c and 46d so that the IPA concentration of the mixed solution is 7.5% or less. For example, the controller 15 controls the flow rate regulators 46c and 46d so that the flow rate ratio of DIW and IPA is 1000:75, so that a mixed solution having an IPA concentration of 7.5% is supplied to the treatment membrane.

Here, even if the mixed solution with an IPA concentration of 7.5% is continuously supplied to the treatment film for a long time, the treatment film may be dissolved and the particle removal rate may decrease. From this viewpoint, the supply time of the mixed solution having an IPA concentration of 7.5% is preferably 60 sec or less, and the supply time of the mixed solution is more preferably 2 sec.

Moreover, the present inventors set the flow rate of DIW to 1000 ml/min and the flow rate of IPA to 75 ml/min to obtain a mixed solution with an IPA concentration of 7.5%. Furthermore, by conducting experiments, the particle removal rate after the peeling treatment was measured for both the case of supplying this mixed solution to the treatment film for 60 sec and the case of supplying the treatment film to the treatment film for 2 sec. As a result, it was confirmed that the removal rate in the case of supplying 2 sec was higher than that in the case of supplying 60 sec.

Next, a DIW supply process is performed in the substrate cleaning apparatus 14 (step S203). In the DIW supply process, the nozzle 41c of the liquid supply unit 40 is positioned above the center of the wafer W. As shown in FIG. After that, DIW is supplied to the process film formed on the wafer W by opening the valve 44c for a predetermined time. The DIW supplied to the processing film on the wafer W spreads on the surface of the processing film due to centrifugal force accompanying the rotation of the wafer W. Thereby, a liquid film of DIW is formed on the processing film.

The DIW penetrates into the processing film and reaches the interface of the wafer W through the flow path of the DIW formed in the processing film by supplying the mixed solution. Then, the DIW penetrates into the interface of the wafer W, that is, the pattern forming surface, and the processing film is peeled off from the wafer W. As shown in FIG. Thereby, the particles P attached to the patterned surface of the wafer W are peeled off from the wafer W together with the processing film.

As described above, in the substrate cleaning apparatus 14 according to the first embodiment, before supplying DIW as the peeling treatment liquid to the treatment film, the mixed liquid of both DIW and IPA is supplied to the treatment film, and the mixed liquid of both DIW and IPA is supplied to the treatment film. Form the circulation path of DIW. Thereby, since the time until the DIW penetrates into the pattern forming surface is shortened, the time until the processing film is peeled off from the wafer W can be shortened. Therefore, peeling of the handle film from the wafer W can be promoted.

Furthermore, in the substrate cleaning apparatus 14 according to the first embodiment, IPA heated to a predetermined temperature (for example, 65°) is mixed with DIW. By heating the IPA, the surface tension of the IPA becomes smaller, so the surface tension of the mixed solution can be made smaller. Therefore, the flow path of pure water can be formed earlier in the treatment membrane.

In addition, in the substrate cleaning apparatus 14 according to the first embodiment, by supplying IPA and DIW to the processing film respectively, and mixing them on the processing film, the mixed liquid is supplied to the processing film. Thereby, it is not necessary to separately provide a mixing section for generating a mixed liquid of a predetermined concentration, and the apparatus can be constructed at low cost.

In addition, in the substrate cleaning apparatus 14 according to the first embodiment, since DIW is supplied to the processing film, and DIW is placed on the processing film, and then the mixed liquid is supplied to the processing film, it is possible to prevent the processing film from being damaged between DIW and IPA. In the case of being dissolved by IPA before mixing.

As described above, the substrate cleaning system 1 according to the first embodiment includes a film formation processing liquid supply unit (liquid supply unit 40 ), a peeling processing liquid supply unit (liquid supply unit 40 ), and a dissolution processing liquid supply unit (liquid supply unit 40). The film-forming treatment liquid supply unit supplies, to the substrate (wafer W), a film-forming treatment liquid (for example, a top coating liquid or a substrate cleaning composition) containing volatile components for forming a film on the substrate. The peeling treatment liquid supply unit supplies pure water (DI W) as a peeling treatment liquid for peeling the treatment film from the substrate to the treatment film formed by the film formation treatment liquid cured or cured on the substrate due to volatilization of the volatile components. The dissolution treatment liquid supply unit supplies a dissolution treatment liquid (for example, IPA) for dissolving the treatment film to the treatment film. In addition, the peeling treatment liquid supply unit supplies a "mixed liquid obtained by mixing a liquid with a surface tension smaller than that of pure water (for example, IPA) and pure water" to the treatment film, and then supplies pure water as a peeling treatment liquid. water.

Therefore, according to the substrate cleaning system 1 of the first embodiment, peeling of the processing film from the wafer W can be promoted.

(Second Embodiment) In the second embodiment, a specific configuration example of the substrate holding mechanism will be described. The substrate holding mechanism according to the second embodiment is provided with two clamper groups that can operate independently, and the wafer W is switched in the above-mentioned dissolving liquid supply process using these two clamper groups.

FIG. 6 is a schematic side view of the substrate holding mechanism according to the second embodiment. 7 is a schematic plan view (Part 1) of the substrate holding mechanism according to the second embodiment. Fig. 8 is a schematic enlarged view of the periphery of the first clamping body (No. 1). Fig. 9 is a schematic enlarged view of the periphery of the second clamping body (No. 1).

10 is a schematic plan view (Part 2) of the substrate holding mechanism according to the second embodiment. Fig. 11 is a schematic enlarged view of the periphery of the second clamping body (Part 2). Fig. 12 is a schematic enlarged view of the periphery of the first clamping body (Part 2).

6 to 9 show the state in which the wafer W is clamped by the first clamp body 330_1 described later, and FIGS. 10 to 12 show the state in which the wafer W is clamped by the second clamp body 330_2 described later.

As shown in FIGS. 6 and 7 , the substrate cleaning apparatus 14A according to the second embodiment includes a substrate holding mechanism 30A. The board|substrate holding mechanism 30A has the rotation holding part 31A, the support|pillar part 32, and the drive part 33 (refer FIG. 3).

The rotation holding part 31A has a first base part 310 and a second base part 320 . The first base portion 310 is a disc-shaped member connected to the pillar portion 32 , and the second base portion 320 is placed on the top surface of the first base portion 310 .

In the lower part of the second base part 320, a plurality of (here, three) pillars 321 extending in the vertical direction are provided. The support column 321 extends downward of the first base portion 310 through the through hole 312 provided in the first base portion 310 .

A push-up mechanism 323 is provided below the support column 321 . The push-up mechanism 323 includes a push-up portion 323a extending in the extending direction, and a drive portion 323b for raising and lowering the push-up portion 323a in the vertical direction. The push-up mechanism 323 uses the driving portion 323b to move the push-up portion 323a vertically upward, so as to push up the support column 321 of the second base portion 320 vertically upward.

As described above, the second base portion 320 can be separated from the top surface of the first base portion 310 by the push-up mechanism 323 to move upward. A plurality of (here, three) pins 324 are disposed on the upper portion of the second base portion 320 to support the wafer W when the second base portion 320 moves upward.

In addition, an engaging convex portion 313 is formed on the top surface of the first base portion 310 , and an engaging concave portion 326 is formed on the bottom surface of the second base portion 320 . The engaging convex portion 313 is formed so as to surround the circumference of the through hole 312 , and the engaging concave portion 326 is formed so as to surround the circumference of the engaging convex portion 313 . By engaging the engaging protrusions 313 with the engaging recesses 326 , the first base portion 310 and the second base portion 320 can be integrally rotated without positional displacement.

Furthermore, as shown in FIG. 7 , the substrate holding mechanism 30A includes a plurality of (three in this case) first holding bodies 330_1 and a plurality of (three in this case) second holding bodies 330_2. A plurality of the first holding bodies 330_1 and the second holding bodies 330_2 are alternately arranged in a circumferential shape on the outer peripheral portion of the first base portion 310 . In addition, each of the clamping bodies 330_1 and 330_2 is rotatably supported relative to the first base portion 310 with the rotation shaft 332 extending in the horizontal direction as the center.

The plurality of first clamping bodies 330_1 and the second clamping bodies 330_2 are provided with clamping portions 331 for clamping the peripheral edge portion of the wafer W at a position above the rotating shaft 332 , and a top surface disposed on the first base portion 310 The push-down portion 333 between the bottom surface of the second base portion 320 and the second base portion 320 . For example, the first clamping body 330_1 and the second clamping body 330_2 are substantially L-shaped in side view, the rotating shaft 332 is arranged at the corner of the L-shape, and the clamping portion 331 and the push-down portion 333 are respectively arranged in the L-shape end of .

Biasing members (not shown) are provided on the rotating shafts 332 of the plurality of first clamping bodies 330_1 and the second clamping bodies 330_2. With this biasing member, the plurality of first clamping bodies 330_1 and second clamping bodies 330_2 are biased so as to rotate toward the direction in which the clamping portion 331 is separated from the wafer W.

On the lower part of the second base portion 320, as shown in FIG. 7, a plurality of (three in this case) first recesses 325_1 and a plurality of (three in this case) second recesses 325_2 are formed.

For example, as shown in FIG. 7 , the plurality of second recesses 325_2 are arranged at positions corresponding to the plurality of second holding bodies 330_2, and the plurality of first recesses 325_1 are arranged at positions corresponding to the plurality of first holding bodies 330_1 A position that deviates from a predetermined angle (eg 10°).

At this time, as shown in FIG. 8 , the plurality of first clamping bodies 330_1 are in a state in which the push-down portions 333 thereof are pushed down by the bottom surface of the second base portion 320 . Since the push-down portion 333 is pushed down, the rotation of the clamping portion 331 in the direction of separation from the wafer W by the biasing member (not shown) is restricted. Thereby, the plurality of first clamping bodies 330_1 are in a state in which the peripheral edge portion of the wafer W is clamped by the clamping portions 331 .

On the other hand, as shown in FIG. 9 , the plurality of second holding bodies 330_2 have second recesses 325_2 disposed at positions corresponding to the push-down portions 333 , so the push-down portions 333 of the second holding bodies 330_2 are different from the first push-down portions 333 . A clamping body 330_1 is not pushed down by the bottom surface of the second base portion 320 . Therefore, the second holding body 330_2 is rotated toward the direction in which the holding portion 331 is separated from the wafer W by a biasing member (not shown), that is, a state in which the wafer W is not held.

The substrate holding mechanism 30A according to the second embodiment can switch from the state of holding the wafer W by the first holding body 330_1 to the state of holding the wafer W by the second holding body 330_2.

During this conversion, the rotation of the wafer W is first stopped, and then the second base portion 320 is pushed up by using the push-up mechanism 323 . By raising the second base portion 320 , the clamping of the wafer W by the first clamping body 330_1 is released, and the wafer W is supported by the pins 324 .

Next, in a state where the second base portion 320 is pushed up, the first base portion 310 is rotated by a predetermined angle (here, 10°) by the driving portion 33 . Thus, as shown in FIG. 10 , the plurality of first recesses 325_1 are arranged at positions corresponding to the plurality of first holding bodies 330_1, and the plurality of second recesses 325_2 are arranged at the slave and the plurality of second holding bodies 330_2 The corresponding position deviates from a predetermined angle (in this case, 10°).

After that, the second base portion 320 is lowered using the push-up mechanism 323 . Thereby, as shown in FIG. 11 , the push-down portions 333 of the plurality of second clamping bodies 330_2 are pushed down by the bottom surface of the second base portion 320 , and the plurality of second clamping bodies 330_2 are pushed down with the rotating shaft 332 as the center. When rotated, the clamping portions 331 of the plurality of second clamping bodies 330_2 are in a state of clamping the peripheral edge portion of the wafer W. As shown in FIG.

On the other hand, as shown in FIG. 12 , since the first concave portion 325_1 is arranged at a position corresponding to the push-down portion 333 , the push-down portion 333 is not formed to be moved by the second base portion 320 . Pushed down state. Therefore, the plurality of first clamping bodies 330_1 are in a state in which the wafer W is not clamped.

Thereby, the state in which the wafer W is clamped by the first clamping body 330_1 is switched to the state in which the wafer W is clamped by the second clamping body 330_2.

Also, as shown in FIG. 7 , the through hole 312 formed in the first base portion 310 has a shape extending along the circumferential direction of the first base portion 310 so that the rotation of the first base portion 310 is not affected by the second base portion. The struts 321 of the seat 320 get in the way.

In addition, as shown in FIGS. 6 and 7 , a plurality of (here, six) locking portions 315 are provided on the top surface of the first base portion 310 , and a plurality of (here, six) locking portions 315 are formed on the peripheral portion of the second base portion 320 This is the notch part 327 of six). As shown in FIG. 7 , when the plurality of second concave portions 325_2 are arranged at positions corresponding to the plurality of second holding bodies 330_2, the locking portion 315 abuts against an end portion of the cutout portion 327 on one side in the rotational direction. , and as shown in FIG. 10 , when the plurality of first concave portions 325_1 are arranged at positions corresponding to the plurality of first holding bodies 330_1, they are in contact with the end portion on the other side of the notch portion 327 in the rotational direction. .

As described above, according to the substrate holding mechanism 30A of the second embodiment, the wafer W can be held by the plurality of first holding bodies 330_1 and the plurality of first holding bodies 330_1 can be operated independently of the first holding bodies 330_1. The state in which the two holding bodies 330_2 hold the wafer W is switched.

In the second embodiment, the control unit 15 performs the above-mentioned switching process of both the first holder 330_1 and the second holder 330_2 in the dissolving process liquid supply process (step S107 in FIG. 4 ). For example, the control unit 15 stops the supply of IPA and the rotation of the wafer W after supplying the IPA as the dissolving treatment liquid to the wafer W for a predetermined period of time, and performs the above-described switching process to switch from the first holder 330_1 to the After the second holder 330_2, the supply of the IPA and the rotation of the wafer W are restarted. In this way, even if the processing film or the particles P are attached to the first holding body 330_1, the wafer W can still be prevented from being stained or dust generated by switching to the second holding body 330_2.

Moreover, as shown in FIG. 6, the substrate cleaning apparatus 14A according to the second embodiment includes a recovery cup 50A. The recovery cup 50A has an outer cup body 53 and an inner cup body 54 arranged inside the outer cup body 53 . The inner cup 54 receives the liquid scattered from the bottom surface of the wafer W. As shown in FIG. In addition, the inner cup 54 is formed lower than the outer cup 53, and between the outer cup 53 and the inner cup 54, a liquid discharge port 51 is formed to receive the liquid scattered from the top surface of the wafer W to the liquid discharge port 51. Guided drainage path. As described above, the recovery cup 50A can separate both the liquid scattered from the top surface of the wafer W and the liquid scattered from the bottom surface of the wafer W.

In the above-described embodiments, all of the substrate cleaning apparatuses 14 and 14A perform the film formation treatment liquid supply process, the peeling treatment liquid supply treatment, and the dissolution treatment liquid supply treatment.

In addition, further effects or modifications can be easily derived by those skilled in the art. Therefore, the broader aspects of the present invention are not limited to the specific detailed and representative embodiments shown and described above. Therefore, with regard to the idea or scope of the general inventive concept defined by the appended claims and their equivalents, various changes may be made without departing from the idea or scope.

1‧‧‧Substrate cleaning system 2‧‧‧Loading and unloading station 3‧‧‧Processing station 4‧‧‧Control device 11‧‧‧Carrier mounting part 12, 13‧‧‧Conveying part 121, 131‧‧‧Substrate conveying Device 122‧‧‧Transmission part 14, 14A‧‧‧Substrate cleaning device 15‧‧‧Control part 16‧‧‧Storage part 20‧‧‧Chamber 21‧‧‧FFU22‧‧‧valve 23‧‧‧downflow gas Supply source 30, 30A‧‧‧substrate holding mechanism 31, 31A‧‧‧rotating holding part 32‧‧‧pillar part 33‧‧‧driving part 310‧‧‧first base part 311‧‧‧holding member 312‧‧ ‧Through hole 313‧‧‧Engaging convex part 315‧‧‧Locking part 320‧‧‧Second base part 321‧‧‧Strut 323‧‧‧Push-up mechanism 323a‧‧‧Push-up part 323b‧‧‧ Driving part 324‧‧‧pin 325_1‧‧‧first concave part 325_2‧‧‧second concave part 326‧‧‧engaging concave part 327‧‧‧notch part 330_1‧‧first clamping body 330_2‧‧‧second Clamping body 331‧‧‧Clamping part 332‧‧‧Rotating shaft 333‧‧‧Push-down part 40‧‧‧Liquid supply part 41a~41d‧‧‧Nozzle 42‧‧‧arm part 43‧‧‧Rotating elevating mechanism 44a ~44d‧‧‧Valve 45a‧‧‧chemical solution supply source 45b‧‧‧film formation processing solution supply source 45c‧‧‧stripping process solution supply source 45d‧‧‧dissolution processing solution supply source 46a~46d‧‧‧flow adjustment 50, 50A‧‧‧Recovery Cup 51‧‧‧Drain port 52‧‧‧Exhaust port 53‧‧‧Outer cup body 54‧‧‧Inner cup body C‧‧‧Carrier P‧‧‧Particles S101~S110 , S201~S203‧‧‧step W‧‧‧wafer

1A is an explanatory diagram of a substrate cleaning method according to the first embodiment. 1B is an explanatory diagram of the substrate cleaning method according to the first embodiment. 1C is an explanatory diagram of the substrate cleaning method according to the first embodiment. 1D is an explanatory diagram of the substrate cleaning method according to the first embodiment. 1E is an explanatory diagram of the substrate cleaning method according to the first embodiment. FIG. 2 is a schematic diagram showing the configuration of the substrate cleaning system according to the first embodiment. FIG. 3 is a schematic diagram showing the configuration of the substrate cleaning apparatus according to the first embodiment. FIG. 4 is a flowchart showing the processing sequence of the substrate cleaning process performed by the substrate cleaning system according to the first embodiment. FIG. 5 is a flowchart showing an example of the processing procedure of the peeling process. 6 is a schematic side view of the substrate holding mechanism according to the second embodiment. FIG. 7 is a schematic plan view (Part 1) of the substrate holding mechanism according to the second embodiment. [FIG. 8] It is a schematic enlarged view of the periphery of the first clamping body (No. 1). [FIG. 9] It is a schematic enlarged view of the periphery of the second clamping body (No. 1). FIG. 10 is a schematic plan view (Part 2) of the substrate holding mechanism according to the second embodiment. [FIG. 11] It is a schematic enlarged view of the periphery of the second clamping body (Part 2). [FIG. 12] It is a schematic enlarged view of the periphery of the first clamping body (Part 2).

Steps S101~S110‧‧‧

Claims (9)

A method for cleaning a substrate, comprising: a film-forming treatment liquid supplying step of supplying a film-forming treatment liquid containing volatile components to a substrate for forming a film on the substrate; The process film formed by volatilization of components and solidified or hardened on the substrate is supplied with pure water, and a liquid film of pure water is formed on the process film; the mixed liquid film formation step, after the pure water film formation step, for the treatment The membrane is supplied with pure water from the first nozzle, and at the same time, a liquid whose surface tension is smaller than that of pure water is supplied from the second nozzle, and a liquid film of a mixture of pure water and the liquid is formed on the processing membrane; After the mixed liquid film forming step, pure water is supplied to the treatment film to peel the treatment film from the substrate; and a dissolving treatment liquid supply step is supplied to the treatment film after the peeling step, which dissolves the treatment film. Dissolve the treatment solution. The substrate cleaning method of claim 1, wherein the supply time of pure water in the pure water film forming step is compared with the supply time of pure water and the liquid in the mixed liquid film forming step, and the The supply time of pure water in the peeling step is short. The substrate cleaning method as claimed in claim 1 or 2 of the claimed scope, wherein the rotational speed of the substrate in the pure water film forming step is compared with the rotational speed of the substrate in the mixed liquid film forming step and the speed of the substrate in the peeling step The rotational speed of the substrate is low. According to the substrate cleaning method of claim 1 or 2, the liquid is IPA. According to the substrate cleaning method of claim 4, the IPA is heated IPA. According to the substrate cleaning method of claim 4 of the patented scope, the IPA concentration of the mixed solution is less than 25%. The substrate cleaning method according to claim 1 or 2, wherein, in the dissolving treatment liquid supply step, a plurality of first holding bodies having "holding the peripheral edge portion of the substrate, and a A holding part of a plurality of second holding bodies "operating to hold the peripheral edge of the substrate" by holding the body, the state in which the peripheral part of the substrate is held by the plurality of first holding bodies, and the state of using the plurality of first holding bodies to hold the peripheral part of the substrate. The state in which the peripheral edge portion of the substrate is clamped by the plurality of second clamping bodies is switched. A substrate cleaning system comprising: a film-forming treatment liquid supply unit for supplying a film-forming treatment liquid containing volatile components for forming a film on the substrate to a substrate; A process film formed by volatilization of components and cured or hardened on the substrate is supplied with pure water as a peeling process liquid for peeling the process film from the substrate; and a dissolving process liquid supply unit for supplying the process film to the process film Dissolved dissolving treatment liquid; wherein the stripping treatment liquid supply unit includes: a first nozzle for supplying pure water; and a second nozzle for supplying a liquid whose surface tension is smaller than that of pure water; and the stripping treatment liquid supply section executes: pure water A film forming process, for which pure water is supplied from the first nozzle to form a liquid film of pure water on the process film; Mixed liquid film formation treatment, after the pure water film formation treatment, to the treatment film, pure water is supplied from the first nozzle and the liquid is supplied from the second nozzle at the same time, and pure water and the treatment film are formed on the treatment film. A liquid film of a mixed liquid of both liquids; and a peeling process, after the mixed liquid film forming process, the process film is peeled from the substrate by supplying pure water from the first nozzle to the process film. A recording medium is a recording medium that can be read by a computer, and stores a program that operates on the computer to control the substrate cleaning system. When the program is executed, the computer controls the substrate cleaning system, so as to carry out the patent application No. 1 The substrate cleaning method of any one of items 1 to 7.

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