JPWO2018128088A1 - Substrate cleaning method, substrate cleaning system, and storage medium - Google Patents

Abstract

The substrate cleaning method according to the embodiment includes a film forming process liquid supply process, a stripping process liquid supply process, and a dissolution process liquid supply process. In the film formation treatment liquid supply step, a film formation treatment liquid for forming a film on the substrate containing a volatile component is supplied to the substrate. The peeling treatment liquid supply step supplies pure water as a peeling treatment liquid for peeling the treatment film from the substrate to the treatment film formed by solidifying or curing the film formation treatment liquid on the substrate by volatilization of volatile components. . The dissolution treatment liquid supply step supplies a dissolution treatment liquid that dissolves the treatment film with respect to the treatment film after the peeling treatment liquid supply step. In the stripping treatment liquid supply step, pure water as the stripping treatment liquid is supplied to the treatment film after supplying a mixed liquid obtained by mixing a liquid having a surface tension smaller than that of pure water and pure water.

Description

  Embodiments disclosed herein relate to a substrate cleaning method, a substrate cleaning system, and a storage medium.

  Conventionally, there has been known a substrate cleaning apparatus that removes particles adhering to a substrate such as a silicon wafer or a compound semiconductor wafer.

  For example, Patent Document 1 discloses a substrate cleaning method in which a treatment film is formed on the surface of a substrate, and the treatment film is peeled off in a “film” state to remove particles on the substrate together with the treatment film. Yes.

JP2015-119164A

  However, the technique described in Patent Document 1 described above has room for further improvement in terms of promoting the peeling of the treatment film.

  An object of one embodiment is to provide a substrate cleaning method, a substrate cleaning system, and a storage medium that can promote the separation of a treatment film from a substrate.

  The substrate cleaning method according to an aspect of the embodiment includes a film forming process liquid supply process, a stripping process liquid supply process, and a dissolution process liquid supply process. In the film formation treatment liquid supply step, a film formation treatment liquid for forming a film on the substrate containing a volatile component is supplied to the substrate. The stripping treatment liquid supply step supplies pure water as a stripping treatment liquid for stripping the treatment film from the substrate to the treatment film formed by solidifying or curing the film deposition treatment liquid on the substrate by volatilization of volatile components. . The dissolution treatment liquid supply step supplies a dissolution treatment liquid that dissolves the treatment film with respect to the treatment film after the peeling treatment liquid supply step. In the stripping treatment liquid supply step, pure water as the stripping treatment liquid is supplied to the treatment film after supplying a mixed liquid obtained by mixing a liquid having a surface tension smaller than that of pure water and pure water.

  According to one aspect of the embodiment, peeling of the treatment film from the substrate can be promoted.

FIG. 1A is an explanatory diagram of a substrate cleaning method according to the first embodiment. FIG. 1B is an explanatory diagram of the substrate cleaning method according to the first embodiment. FIG. 1C is an explanatory diagram of the substrate cleaning method according to the first embodiment. FIG. 1D is an explanatory diagram of the substrate cleaning method according to the first embodiment. FIG. 1E is an explanatory diagram of the substrate cleaning method according to the first embodiment. FIG. 2 is a schematic diagram illustrating a configuration of the substrate cleaning system according to the first embodiment. FIG. 3 is a schematic diagram showing the configuration of the substrate cleaning apparatus according to the first embodiment. FIG. 4 is a flowchart showing a processing procedure of substrate cleaning processing executed by the substrate cleaning system according to the present embodiment. FIG. 5 is a flowchart illustrating an example of a processing procedure of the peeling process. FIG. 6 is a schematic side view of the substrate holding mechanism according to the second embodiment. FIG. 7 is a schematic plan view (part 1) of the substrate holding mechanism according to the second embodiment. FIG. 8 is a schematic enlarged view (No. 1) around the first gripping body. FIG. 9 is a schematic enlarged view (No. 1) around the second gripping body. FIG. 10 is a schematic plan view (part 2) of the substrate holding mechanism according to the second embodiment. FIG. 11 is a schematic enlarged view (No. 2) around the second gripping body. FIG. 12 is a schematic enlarged view (No. 2) around the first gripping body.

  Hereinafter, embodiments of a substrate cleaning method, a substrate cleaning system, and a storage medium disclosed in the present application will be described in detail with reference to the accompanying drawings. In addition, this invention is not limited by embodiment shown below.

(First embodiment)
<Contents of substrate cleaning method>
First, the contents of the substrate cleaning method according to the first embodiment will be described with reference to FIGS. 1A to 1E. 1A to 1E are explanatory views of a substrate cleaning method according to the first embodiment.

  As shown in FIG. 1A, the substrate cleaning method according to the first embodiment includes a volatile component with respect to the pattern formation surface of a substrate such as a silicon wafer or a compound semiconductor wafer (hereinafter referred to as “wafer W”). A processing liquid for forming a film on the wafer W (hereinafter referred to as “film forming processing liquid”) is supplied.

  The film-forming treatment liquid supplied to the pattern formation surface of the wafer W is solidified or cured while causing volume shrinkage due to volatilization of the volatile components, thereby forming a treatment film. As a result, the pattern formed on the wafer W and the particles P adhering to the pattern are covered with the processing film (see FIG. 1B). Here, “solidification” means solidification, and “curing” means that molecules are connected to each other to be polymerized (for example, crosslinking or polymerization).

  Subsequently, as shown in FIG. 1B, the peeling treatment liquid is supplied to the treatment film on the wafer W. The peeling treatment liquid is a treatment liquid for peeling the above-described treatment film from the wafer W. In the substrate cleaning method according to the first embodiment, pure water at room temperature (about 23 to 25 degrees) is used as the stripping treatment liquid.

  The pure water supplied onto the treatment film penetrates into the treatment film and reaches the interface of the wafer W. Further, the pure water that has reached the interface of the wafer W penetrates into the pattern forming surface that is the interface of the wafer W.

  In this way, when pure water as a peeling treatment liquid permeates between the wafer W and the treatment film, the treatment film is peeled off from the wafer W in a “film” state, and attached to the pattern formation surface accordingly. The particles P are peeled off from the wafer W together with the treatment film (see FIG. 1C).

  Note that the film-forming treatment liquid can separate the particles P attached to the pattern or the like from the pattern or the like due to distortion (tensile force) generated by volume contraction accompanying volatilization of the volatile component.

  Subsequently, a solution for dissolving the treatment film is supplied to the treatment film peeled from the wafer W. Thereby, the treatment film is dissolved, and the particles P taken in the treatment film are in a state of floating in the dissolution treatment liquid (see FIG. 1D). After that, the particles P are removed from the wafer W by washing away the dissolution treatment liquid or the dissolved treatment film with pure water or the like (see FIG. 1E).

  As described above, in the substrate cleaning method according to the first embodiment, the processing film formed on the wafer W is peeled from the wafer W in a “film” state, so that the particles P attached to the pattern or the like are processed into the processing film. At the same time, the wafer W was removed.

  Therefore, according to the substrate cleaning method according to the first embodiment, particle removal is performed without using a chemical action, so that erosion of the underlying film due to an etching action or the like can be suppressed.

  In addition, according to the substrate cleaning method according to the first embodiment, the particles P can be removed with a weak force as compared with the conventional substrate cleaning method using physical force, so that pattern collapse can be suppressed. it can.

  Furthermore, according to the substrate cleaning method according to the first embodiment, it is possible to easily remove particles P having a small particle diameter, which are difficult to remove by the conventional substrate cleaning method using physical force. .

  In the substrate cleaning method according to the first embodiment, after the processing film is formed on the wafer W, it is completely removed from the wafer W without performing pattern exposure. Therefore, the cleaned wafer W is in a state before the film-forming treatment liquid is applied, that is, a state where the pattern forming surface is exposed.

  Here, as the film-forming treatment liquid, for example, a topcoat liquid, a “substrate cleaning composition” described in JP 2016-36012 A, or the like is used. However, since the treatment film formed with these film-forming treatment liquids has water repellency, even if pure water as a peeling treatment liquid is supplied to the treatment film, the pure water is repelled on the surface of the treatment film. Therefore, it is difficult to efficiently penetrate pure water into the treatment membrane.

  Therefore, in the substrate cleaning method according to the first embodiment, prior to supplying pure water as the stripping treatment liquid (that is, between the process shown in FIG. 1A and the process shown in FIG. 1B), In addition, a mixed liquid obtained by mixing a liquid having a small surface tension and pure water is supplied to the treatment film.

  Since such a mixed liquid has a smaller surface tension than pure water, it is not easily repelled on the surface of the treatment film and easily penetrates into the treatment film. By permeating the mixed solution into the treatment membrane, a passage of pure water is formed in the treatment membrane. Thereby, after that, when pure water as the peeling treatment liquid is supplied to the treatment film, the pure water can reach the pattern forming surface at an early stage.

  As described above, according to the substrate cleaning method according to the first embodiment, the pure water as the peeling treatment liquid is mixed with the pure water and the liquid whose surface tension is smaller than that of the pure water before supplying the treatment film. By supplying the mixed liquid to the treatment membrane, pure water can easily penetrate into the treatment membrane. Thereby, peeling of the processing film from the wafer W can be promoted.

<Configuration of substrate cleaning system>
Next, the configuration of the substrate cleaning system according to the first embodiment will be described with reference to FIG. FIG. 2 is a schematic diagram illustrating a configuration of the substrate cleaning system according to the first embodiment. In the following, in order to clarify the positional relationship, the X axis, the Y axis, and the Z axis that are orthogonal to each other are defined, and the positive direction of the Z axis is the vertically upward direction.

  As shown in FIG. 2, the substrate cleaning system 1 includes a carry-in / out station 2 and a processing station 3. The carry-in / out station 2 and the processing station 3 are provided adjacent to each other.

  The carry-in / out station 2 includes a carrier placement unit 11 and a transport unit 12. A plurality of transfer containers (hereinafter referred to as “carrier C”) that can store a plurality of wafers W in a horizontal state are placed on the carrier placement unit 11.

  The transport unit 12 is provided adjacent to the carrier placement unit 11. A substrate transfer device 121 and a delivery unit 122 are provided inside the transfer unit 12.

  The substrate transfer device 121 includes a wafer holding mechanism that holds the wafer W. Further, the substrate transfer device 121 can move in the horizontal direction and the vertical direction and can turn around the vertical axis, and transfers the wafer W between the carrier C and the delivery unit 122 using a wafer holding mechanism. Do.

  The processing station 3 is provided adjacent to the transfer unit 12. The processing station 3 includes a transfer unit 13 and a plurality of substrate cleaning apparatuses 14. The plurality of substrate cleaning apparatuses 14 are provided side by side on both sides of the transport unit 13.

  The transport unit 13 includes a substrate transport device 131 inside. The substrate transfer device 131 includes a wafer holding mechanism that holds the wafer W. Further, the substrate transfer device 131 can move in the horizontal direction and the vertical direction and can turn around the vertical axis, and the wafer W can be transferred between the delivery unit 122 and the substrate cleaning device 14 using a wafer holding mechanism. Transport.

  The substrate cleaning apparatus 14 is an apparatus that executes a substrate cleaning process based on the above-described substrate cleaning method. A specific configuration of the substrate cleaning apparatus 14 will be described later.

  The substrate cleaning system 1 includes a control device 4. The control device 4 is a device that controls the operation of the substrate cleaning system 1. The control device 4 is a computer, for example, and includes a control unit 15 and a storage unit 16. The storage unit 16 stores a program for controlling various processes such as a substrate cleaning process. The control unit 15 controls the operation of the substrate cleaning system 1 by reading and executing the program stored in the storage unit 16. The control unit 15 is, for example, a CPU (Central Processing Unit) or an MPU (Micro Processor Unit), and the storage unit 16 is, for example, a ROM (Read Only Memory), a RAM (Random Access Memory), or the like.

  Such a program may be recorded on a computer-readable storage medium and may be installed in the storage unit 16 of the control device 4 from the storage medium. Examples of the computer-readable storage medium include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical disk (MO), and a memory card.

  In the substrate cleaning system 1 configured as described above, first, the substrate transfer device 121 of the carry-in / out station 2 takes out the wafer W from the carrier C and places the taken-out wafer W on the delivery unit 122. The wafer W placed on the delivery unit 122 is taken out from the delivery unit 122 by the substrate transfer device 131 of the processing station 3 and carried into the substrate cleaning device 14, and the substrate cleaning process is performed by the substrate cleaning device 14. The cleaned wafer W is unloaded from the substrate cleaning device 14 by the substrate transfer device 131 and placed on the delivery unit 122, and then returned to the carrier C by the substrate transfer device 121.

<Configuration of substrate cleaning device>
Next, the configuration of the substrate cleaning apparatus 14 will be described with reference to FIG. FIG. 3 is a schematic diagram showing the configuration of the substrate cleaning apparatus 14 according to the first embodiment.

  As shown in FIG. 3, the substrate cleaning apparatus 14 includes a chamber 20, a substrate holding mechanism 30, a liquid supply unit 40, and a recovery cup 50.

  The chamber 20 accommodates the substrate holding mechanism 30, the liquid supply unit 40, and the recovery cup 50. An FFU (Fan Filter Unit) 21 is provided on the ceiling of the chamber 20. The FFU 21 forms a down flow in the chamber 20.

  The FFU 21 is connected to the downflow gas supply source 23 via the valve 22. The FFU 21 discharges downflow gas (for example, dry air) supplied from the downflow gas supply source 23 into the chamber 20.

  The substrate holding mechanism 30 includes a rotation holding unit 31, a support unit 32, and a drive unit 33. The rotation holding unit 31 is provided in the approximate center of the chamber 20. A holding member 311 that holds the wafer W from the side surface is provided on the upper surface of the rotation holding unit 31. The wafer W is horizontally held by the holding member 311 while being slightly separated from the upper surface of the rotation holding unit 31.

  The support | pillar part 32 is a member extended in a perpendicular direction, a base end part is rotatably supported by the drive part 33, and supports the rotation holding | maintenance part 31 horizontally in a front-end | tip part. The drive unit 33 rotates the column unit 32 around the vertical axis.

  The substrate holding mechanism 30 rotates the rotation holding unit 31 supported by the column unit 32 by rotating the column unit 32 using the driving unit 33, and thereby the wafer W held by the rotation holding unit 31 is rotated. Rotate.

  The liquid supply unit 40 supplies various processing liquids to the wafer W held by the substrate holding mechanism 30. The liquid supply unit 40 includes a plurality (here, four) of nozzles 41a to 41d, an arm 42 that horizontally supports the nozzles 41a to 41d, and a turning lift mechanism 43 that turns and lifts the arm 42.

  The nozzle 41a is connected to the chemical solution supply source 45a via the valve 44a and the flow rate regulator 46a. The nozzle 41b is connected to a film forming process liquid supply source 45b via a valve 44b and a flow rate regulator 46b. The nozzle 41c is connected to the stripping treatment liquid supply source 45c via the valve 44c and the flow rate regulator 46c. The nozzle 41d is connected to a dissolution processing liquid supply source 45d via a valve 44d and a flow rate regulator 46d.

  The chemical liquid supplied from the chemical liquid supply source 45a is discharged from the nozzle 41a. As the chemical solution, for example, DHF (dilute hydrofluoric acid), SC1 (ammonia / hydrogen peroxide / water mixed solution), DSP (Diarrhetic Shellfish Poisoning) and the like are used.

  From the nozzle 41b, the film-forming process liquid supplied from the film-forming process liquid supply source 45b is discharged. As the film forming treatment liquid, for example, a top coat liquid, “a composition for substrate cleaning” described in JP-A-2016-36012, or the like is used. Note that a top coat film (an example of a treatment film) formed by the top coat liquid is a protective film applied to the upper surface of the resist in order to prevent the immersion liquid from entering the resist. The immersion liquid is a liquid used for immersion exposure in a lithography process, for example.

  From the nozzle 41c, the peeling treatment liquid supplied from the peeling treatment liquid supply source 45c is discharged. The stripping treatment liquid is DIW as described above.

  From the nozzle 41d, the dissolution processing liquid supplied from the dissolution processing liquid supply source 45d is discharged. As the dissolution treatment liquid, for example, an organic solvent such as IPA (isopropyl alcohol), thinner, MIBC (4-methyl-2-pentanol), toluene, acetate esters, alcohols, glycols (propylene glycol monomethyl ether) is used. It is done.

  Here, IPA heated to a predetermined temperature (for example, 65 ° C.) is used as the dissolution treatment liquid.

  Note that room temperature IPA may be used as the dissolution treatment liquid. Further, the dissolution treatment liquid is not limited to an organic solvent, and for example, an alkali developer or an acid developer can be used. The alkaline developer may contain at least one of aqueous ammonia, quaternary ammonium hydroxide such as tetramethylammonium hydroxide (TMAH), and aqueous choline. Acetic acid, formic acid, hydroxyacetic acid, etc. can be used as the acidic developer.

  The collection cup 50 is disposed so as to surround the rotation holding unit 31 and collects the processing liquid scattered from the wafer W by the rotation of the rotation holding unit 31. A drain port 51 is formed at the bottom of the recovery cup 50, and the processing liquid collected by the recovery cup 50 is discharged from the drain port 51 to the outside of the substrate cleaning apparatus 14. Further, an exhaust port 52 for discharging the downflow gas supplied from the FFU 21 to the outside of the substrate cleaning apparatus 14 is formed at the bottom of the recovery cup 50.

<Specific operation of substrate cleaning system>
Next, a specific operation of the substrate cleaning apparatus 14 will be described with reference to FIG. FIG. 4 is a flowchart showing the processing procedure of the substrate cleaning processing executed by the substrate cleaning system 1 according to the present embodiment. Each apparatus provided in the substrate cleaning system 1 executes each processing procedure shown in FIG. 4 according to the control of the control unit 15.

  As shown in FIG. 4, in the substrate cleaning apparatus 14, first, a substrate carry-in process is performed (step S101). In such a substrate carry-in process, the wafer W carried into the chamber 20 by the substrate carrying device 131 (see FIG. 2) is held by the holding member 311 of the substrate holding mechanism 30. At this time, the wafer W is held by the holding member 311 with the pattern forming surface facing upward. Thereafter, the rotation holding unit 31 is rotated by the drive unit 33. Thereby, the wafer W rotates together with the rotation holding unit 31 while being held horizontally by the rotation holding unit 31. The rotation speed of the wafer W is set to 1000 rpm, for example.

  Subsequently, the substrate cleaning apparatus 14 performs chemical solution processing (step S102). In the chemical processing, first, the nozzle 41a of the liquid supply unit 40 is positioned above the center of the wafer W. Thereafter, the valve 44a is opened for a predetermined time, whereby a chemical solution such as DHF is supplied to the pattern formation surface of the wafer W on which no resist is formed. The chemical solution supplied to the wafer W spreads on the pattern forming surface of the wafer W due to the centrifugal force accompanying the rotation of the wafer W.

  Subsequently, the nozzle 41 c of the liquid supply unit 40 is located above the center of the wafer W. Thereafter, the valve 44c is opened for a predetermined time, whereby DIW is supplied to the pattern forming surface of the wafer W. The DIW supplied to the wafer W spreads on the pattern forming surface of the wafer W due to the centrifugal force accompanying the rotation of the wafer W. Thereby, the chemical solution remaining on the wafer W is washed away by the DIW.

  Subsequently, in the substrate cleaning apparatus 14, a pre-wet process is performed (step S103). In the pre-wet process, the nozzle 41d of the liquid supply unit 40 is positioned above the center of the wafer W. Thereafter, the valve 44d is opened for a predetermined time, whereby IPA is supplied to the pattern forming surface of the wafer W. The IPA supplied to the wafer W spreads on the pattern forming surface of the wafer W due to the centrifugal force accompanying the rotation of the wafer W.

  Since the topcoat liquid and the substrate cleaning composition as the film-forming treatment liquid have high water repellency, even if the film-forming treatment liquid is supplied to the wafer W after the chemical liquid treatment, the DIW remaining on the surface of the wafer W It will be repelled, and it will take a lot of time to form a liquid film of the film forming treatment liquid on the surface of the wafer W.

  Therefore, in the substrate cleaning system 1 according to the first embodiment, IPA is supplied to the wafer W after the chemical processing, and the DIW remaining on the wafer W after the chemical processing is replaced with IPA. In this way, by spreading IPA having affinity with the film forming treatment liquid on the wafer W in advance, the film forming treatment liquid is transferred to the upper surface of the wafer W in the film forming treatment liquid supply process (step S104) described later. And easily enter the gaps between the patterns. Therefore, it is possible to reduce the amount of film forming treatment liquid used and more reliably remove the particles P that have entered the gaps in the pattern. Further, it is possible to shorten the processing time of the film forming process liquid supply process.

  Here, IPA is supplied to the wafer W in the pre-wet processing, but the processing liquid used for the pre-wet processing is not limited to IPA. As the treatment liquid used for the pre-wet treatment, for example, an organic solvent other than IPA such as ethanol or acetone can be used.

  Subsequently, in the substrate cleaning apparatus 14, a film forming process liquid supply process is performed (step S104). In the film forming process liquid supply process, the nozzle 41 b of the liquid supply unit 40 is positioned above the center of the wafer W. Thereafter, the valve 44b is opened for a predetermined time, whereby the film forming treatment liquid is supplied to the pattern forming surface of the wafer W.

  The film forming treatment liquid supplied to the wafer W spreads on the surface of the wafer W due to the centrifugal force accompanying the rotation of the wafer W. As a result, a liquid film of the film forming treatment liquid is formed on the pattern forming surface of the wafer W. The liquid film is preferably formed to a thickness (for example, 45 nm or more) covering at least the pattern on the wafer W.

  Subsequently, the substrate cleaning apparatus 14 performs a drying process (step S105). In such a drying process, for example, the film forming process liquid is dried by increasing the rotation speed of the wafer W for a predetermined time. Thereby, for example, part or all of the organic solvent contained in the film forming treatment liquid is vaporized, and the solid content contained in the film forming treatment liquid is solidified or hardened, and a treatment film is formed on the pattern forming surface of the wafer W. .

  Note that the drying process in step S105 may be, for example, a process for reducing the pressure in the chamber 20 with a decompression device (not shown), or a process for reducing the humidity in the chamber 20 with the downflow gas supplied from the FFU 21. It may be. Also by these treatments, the film forming treatment liquid can be solidified or cured.

  Further, the substrate cleaning apparatus 14 may cause the substrate cleaning apparatus 14 to wait until the film-forming treatment liquid is naturally solidified or cured. Further, the film formation processing liquid is solidified by stopping the rotation of the wafer W or rotating the wafer W at a rotation speed that does not expose the surface of the wafer W by shaking the film formation processing liquid. It may be cured.

  Subsequently, the substrate cleaning apparatus 14 performs a peeling process (step S106). In the peeling process, the treatment film formed on the wafer W is peeled from the wafer W. The specific contents of the peeling process will be described later.

  Subsequently, the substrate cleaning apparatus 14 performs a dissolution processing liquid supply process (step S107). In the dissolution processing liquid supply process, the nozzle 41 d of the liquid supply unit 40 is positioned above the center of the wafer W. Thereafter, the valve 44d is opened for a predetermined time, whereby IPA is supplied to the processing film peeled from the wafer W. The IPA supplied to the wafer W spreads on the surface of the wafer W due to the centrifugal force accompanying the rotation of the wafer W. Thereby, the treatment film is dissolved.

  In the substrate cleaning system 1 according to the first embodiment, since the IPA heated to a predetermined temperature is used as the dissolution processing liquid, the processing film peeled off from the wafer W can be dissolved in a shorter time.

  Subsequently, in the substrate cleaning apparatus 14, a rinsing process is performed (step S108). In the rinsing process, the nozzle 41 c of the liquid supply unit 40 is positioned above the center of the wafer W. Thereafter, the valve 44c is opened for a predetermined time, whereby DIW is supplied to the processing film peeled from the wafer W. The DIW supplied to the wafer W spreads on the surface of the wafer W due to the centrifugal force accompanying the rotation of the wafer W. Thereby, the dissolved processing film and the particles P floating in the IPA are removed from the wafer W.

  Subsequently, the substrate cleaning apparatus 14 performs a drying process (step S109). In the drying process, for example, by increasing the rotation speed of the wafer W for a predetermined time, the DIW remaining on the surface of the wafer W is shaken off to dry the wafer W.

  In the substrate cleaning apparatus 14, instead of the processing in step S 108 and step S 109 described above, the IPA is supplied to the rotating wafer W from the nozzle 41 d after the dissolution processing liquid supply processing in step S 107, and then the wafer You may perform the process which rotates W at high speed and dries the wafer W. FIG.

  Subsequently, in the substrate cleaning apparatus 14, a substrate carry-out process is performed (step S110). In such a substrate carry-out process, the wafer W is taken out from the chamber 20 of the substrate cleaning device 14 by the substrate transfer device 131 (see FIG. 2). Thereafter, the wafer W is accommodated in the carrier C placed on the carrier placement unit 11 via the delivery unit 122 and the substrate transfer device 121. When the substrate carry-out process is completed, the substrate cleaning process for one wafer W is completed.

  Next, an example of a specific procedure of the peeling process in step S106 will be described with reference to FIG. FIG. 5 is a flowchart illustrating an example of a processing procedure of the peeling process.

  As shown in FIG. 5, in the substrate cleaning apparatus 14, first, DIW liquid accumulation processing is performed (step S201). In the DIW liquid accumulation process, the nozzle 41 c of the liquid supply unit 40 is positioned above the center of the wafer W. Thereafter, the valve 44c is opened for a predetermined time, whereby DIW is supplied to the processing film formed on the wafer W. The DIW supplied to the processing film on the wafer W spreads on the surface of the processing film due to the centrifugal force accompanying the rotation of the wafer W. Thereby, a liquid film of DIW is formed on the treatment film.

  The DIW liquid accumulation process is performed to form a DIW liquid film on the processing film. For this reason, the DIW supply time in the DIW liquid build-up process is set shorter than the subsequent mixed liquid supply process (step S202) and the DIW supply process (step S203). For example, the DIW supply time in the DIW liquid accumulation process is 2 seconds. Further, in the DIW liquid accumulation process, the wafer W may be rotated at a lower speed than in the subsequent mixed liquid supply process (step S202) or the DIW supply process (step S203).

  Subsequently, in the substrate cleaning apparatus 14, a mixed liquid supply process is performed (step S202). In the mixed liquid supply process, for example, an intermediate position between the nozzle 41c and the nozzle 41d of the liquid supply unit 40 is positioned above the center of the wafer W. Thereafter, the valve 44c and the valve 44d are opened for a predetermined time, whereby DIW and IPA are simultaneously supplied to the processing film on the wafer W. DIW and IPA supplied to the processing film on the wafer W are mixed while spreading on the surface of the processing film due to the centrifugal force accompanying the rotation of the wafer W. As a result, a liquid film of a mixed liquid of DIW and IPA is formed on the treatment film.

  The surface tension of IPA is 20.8 mN / m at 20 ° C., which is smaller than the surface tension of DIW (72.75 mN / m). Such a mixed liquid of IPA and DIW has a smaller surface tension than DIW, and thus is not easily repelled on the surface of the treatment film and easily penetrates into the treatment film. Therefore, the passage of pure water can be formed early in the treatment film.

  Here, the mixed solution preferably has an IPA concentration of less than 25%. This is because when the concentration of IPA is 25% or more, the treatment film is dissolved by the mixed solution and the phenomenon that the treatment film peels off in the state of “film” does not occur, resulting in a decrease in the particle removal rate. . More preferably, the IPA concentration of the mixed solution is 7.5% or less.

  The control unit 15 controls the flow rate adjusters 46c and 46d so that the IPA concentration of the mixed solution is 7.5% or less. For example, the control unit 15 controls the flow rate adjusters 46c and 46d so that the flow rate ratio of DIW and IPA is 1000: 75, thereby supplying a liquid mixture having an IPA concentration of 7.5% to the treatment film. .

  Here, even if it is a liquid mixture with an IPA concentration of 7.5%, if the supply to the treatment film is continued for a long time, the treatment film may be dissolved and the particle removal rate may be lowered. From such a viewpoint, the supply time of the mixed liquid having an IPA concentration of 7.5% is preferably 60 sec or less. More preferably, the supply time of the mixed liquid is 2 seconds.

  The inventors of the present application supplied a mixed solution with an IPA concentration of 7.5% obtained by setting the flow rate of DIW to 1000 ml / min and the flow rate of IPA to 75 ml / min for 60 seconds and for 2 seconds. In this case, the particle removal rate after the peeling treatment is measured by experiment, and it is confirmed that the removal rate when supplied for 2 seconds is higher than the removal rate when supplied for 60 seconds.

  Subsequently, the substrate cleaning apparatus 14 performs a DIW supply process (step S203). In the DIW supply process, the nozzle 41 c of the liquid supply unit 40 is positioned above the center of the wafer W. Thereafter, the valve 44c is opened for a predetermined time, whereby DIW is supplied to the processing film formed on the wafer W. The DIW supplied to the processing film on the wafer W spreads on the surface of the processing film due to the centrifugal force accompanying the rotation of the wafer W. Thereby, a liquid film of DIW is formed on the treatment film.

  The DIW penetrates into the processing film through the DIW path formed in the processing film by the mixed liquid supply process, and reaches the interface of the wafer W. Then, the DIW penetrates the pattern forming surface that is the interface of the wafer W, and peels the treatment film from the wafer W. Thereby, the particle P adhering to the pattern formation surface of the wafer W is peeled from the wafer W together with the treatment film.

  As described above, in the substrate cleaning apparatus 14 according to the first embodiment, prior to supplying DIW as the stripping processing liquid to the processing film, a mixed liquid of DIW and IPA is supplied to the processing film and It was decided to form a DIW road. As a result, the time until DIW permeates the pattern formation surface is shortened, so that the time until the treatment film is peeled from the wafer W can be shortened. Therefore, it is possible to promote peeling of the processing film from the wafer W.

  In the substrate cleaning apparatus 14 according to the first embodiment, IPA heated to a predetermined temperature (for example, 65 °) is mixed with DIW. By heating the IPA, the surface tension of the IPA is further reduced, so that the surface tension of the mixed liquid can be further reduced. Therefore, the passage of pure water can be formed earlier in the treatment film.

  Further, in the substrate cleaning apparatus 14 according to the first embodiment, IPA and DIW are respectively supplied to the processing film and mixed on the processing film, thereby supplying the mixed solution to the processing film. It was decided. Thereby, it is not necessary to separately provide a mixing unit for generating a liquid mixture having a predetermined concentration, and the apparatus can be configured at low cost.

  In the substrate cleaning apparatus 14 according to the first embodiment, DIW is supplied to the processing film and DIW is deposited on the processing film, and then the mixed solution is supplied to the processing film. It is possible to prevent the treatment film from being dissolved by IPA before DIW and IPA are mixed.

  As described above, the substrate cleaning system 1 according to the first embodiment includes the film forming process liquid supply part (liquid supply part 40), the stripping process liquid supply part (liquid supply part 40), and the dissolution process liquid supply. Part (liquid supply part 40). The film formation treatment liquid supply unit supplies a film formation treatment liquid (for example, a topcoat liquid or a substrate cleaning composition) containing a volatile component to form a film on the substrate to the substrate (wafer W). The stripping processing liquid supply unit is pure water (DIW) as a stripping processing liquid for stripping the processing film from the substrate with respect to the processing film formed by solidifying or curing the film forming processing liquid on the substrate by volatilization of volatile components. Supply. The dissolution treatment liquid supply unit supplies a dissolution treatment liquid (for example, IPA) that dissolves the treatment film with respect to the treatment film. The stripping treatment liquid supply unit supplies pure water as the stripping treatment liquid after supplying a mixed liquid obtained by mixing a liquid (for example, IPA) having a surface tension smaller than that of pure water and pure water to the treatment film. Supply.

  Therefore, according to the substrate cleaning system 1 according to the first embodiment, peeling of the processing film from the wafer W can be promoted.

(Second Embodiment)
In the second embodiment, a specific configuration example of the substrate holding mechanism will be described. The substrate holding mechanism according to the second embodiment includes two gripping body groups that can operate independently, and uses these two gripping body groups to change the wafer W in the dissolution processing liquid supply process described above. Do.

  FIG. 6 is a schematic side view of the substrate holding mechanism according to the second embodiment. FIG. 7 is a schematic plan view (part 1) of the substrate holding mechanism according to the second embodiment. FIG. 8 is a schematic enlarged view (No. 1) around the first gripping body. FIG. 9 is a schematic enlarged view (No. 1) around the second gripping body.

  FIG. 10 is a schematic plan view (part 2) of the substrate holding mechanism according to the second embodiment. FIG. 11 is a schematic enlarged view (No. 2) around the second gripping body. FIG. 12 is a schematic enlarged view (No. 2) around the first gripping body.

  6 to 9 show a state in which the wafer W is gripped using a first gripping body 330_1 described later, and FIGS. 10 to 12 show the wafer W using a second gripping body 330_2 described later. The state which hold | gripped is shown.

  As shown in FIGS. 6 and 7, the substrate cleaning apparatus 14A according to the second embodiment includes a substrate holding mechanism 30A. The substrate holding mechanism 30A includes a rotation holding unit 31A, a support unit 32, and a drive unit 33 (see FIG. 3).

  The rotation holding unit 31 </ b> A includes a first base unit 310 and a second base unit 320. The first base portion 310 is a disk-like member connected to the support column portion 32, and the second base portion 320 is placed on the upper surface of the first base portion 310.

  A plurality of (in this case, three) support columns 321 extending in the vertical direction are provided below the second base portion 320. The support column 321 extends below the first base portion 310 through a through hole 312 provided in the first base portion 310.

  A push-up mechanism 323 is disposed below the column 321. The push-up mechanism 323 includes a push-up portion 323a extending in the extending direction and a drive unit 323b that raises and lowers the push-up portion 323a along the vertical direction. The push-up mechanism 323 pushes up the column 321 of the second base part 320 vertically upward by moving the push-up part 323a vertically upward using the drive part 323b.

  As described above, the second base portion 320 can be moved upward away from the upper surface of the first base portion 310 by the push-up mechanism 323. A plurality of (here, three) pins 324 for supporting the wafer W when the second base unit 320 moves upward are provided on the upper part of the second base unit 320.

  An engagement convex portion 313 is formed on the upper surface of the first base portion 310, and an engagement concave portion 326 is formed on the lower surface of the second base portion 320. The engaging convex portion 313 is formed so as to surround the through hole 312, and the engaging concave portion 326 is formed so as to surround the engaging convex portion 313. The engagement between the engagement convex portion 313 and the engagement concave portion 326 allows the first base portion 310 and the second base portion 320 to rotate integrally without causing positional displacement.

  Further, as illustrated in FIG. 7, the substrate holding mechanism 30A includes a plurality (here, three) first grip bodies 330_1 and a plurality (here, three) second grip bodies 330_2. The plurality of first grip bodies 330_1 and the second grip bodies 330_2 are alternately arranged in a circumferential manner on the outer peripheral portion of the first base portion 310. In addition, each of the gripping bodies 330_1 and 330_2 is supported by the first base portion 310 so as to be rotatable around a rotation shaft 332 extending in the horizontal direction.

  The plurality of first gripping bodies 330_1 and the second gripping bodies 330_2 include a gripping portion 331 that grips the peripheral edge of the wafer W above the rotation shaft 332, an upper surface of the first base portion 310, and a lower surface of the second base portion 320. And a push-down unit 333 disposed between the two. For example, the first gripping body 330_1 and the second gripping body 330_2 are formed in a substantially L shape in a side view, the rotation shaft 332 is disposed at the corner of the L shape, and the gripping portion 331 and the pressing portion 333 are end portions of the L shape. Placed in each part.

  A biasing member (not shown) is provided on the rotation shaft 332 of the plurality of first grip bodies 330_1 and the second grip bodies 330_2. By the biasing member, the plurality of first grip bodies 330_1 and the second grip bodies 330_2 are biased so that the grip portion 331 rotates in a direction away from the wafer W.

  As shown in FIG. 7, a plurality of (here, three) first recesses 325 </ b> _ <b> 1 and a plurality of (here, three) second recesses 325 </ b> _ <b> 2 are formed in the lower portion of the second base portion 320. .

  For example, as illustrated in FIG. 7, the plurality of second recesses 325_2 are arranged at positions corresponding to the plurality of second grip bodies 330_2, and the plurality of first recesses 325_1 are positions corresponding to the plurality of first grip bodies 330_1. Is disposed at a position deviated by a predetermined angle (for example, 10 °).

  In this case, as shown in FIG. 8, the plurality of first gripping bodies 330 </ b> _ <b> 1 are in a state where the pressing portion 333 is pressed down by the lower surface of the second base portion 320. When the pressing portion 333 is pressed down, the movement of the gripping portion 331 to rotate away from the wafer W is restricted by a biasing member (not shown). As a result, the plurality of first gripping bodies 330_1 are in a state where the peripheral portion of the wafer W is gripped by the gripping portion 331.

  On the other hand, as shown in FIG. 9, the plurality of second gripping bodies 330_2 are provided with the second recesses 325_2 at positions corresponding to the pressing portions 333. For this reason, unlike the 1st holding body 330_1, the pressing part 333 of the 2nd holding body 330_2 is not pushed down by the lower surface of the 2nd base part 320. FIG. Therefore, the second gripping body 330_2 is in a state where the gripping portion 331 is rotated in a direction away from the wafer W by a biasing member (not shown), that is, a state where the wafer W is not gripped.

  The substrate holding mechanism 30A according to the second embodiment can switch from a state where the wafer W is held by the first holding body 330_1 to a state where the wafer W is held by the second holding body 330_2.

  In the case of carrying out such changeover, first, the rotation of the wafer W is stopped, and then the second base unit 320 is lifted using the push-up mechanism 323. As the second base portion 320 moves up, the gripping of the wafer W by the first gripping body 330_1 is released, and the wafer W is supported by the pins 324.

  Subsequently, in a state where the second base portion 320 is lifted, the first base portion 310 is rotated by a predetermined angle (here, 10 °) using the driving portion 33. Accordingly, as shown in FIG. 10, the plurality of first recesses 325_1 are arranged at positions corresponding to the plurality of first grip bodies 330_1, and the plurality of second recesses 325_2 correspond to the plurality of second grip bodies 330_2. It is arranged at a position that is deviated by a predetermined angle (here, 10 °) from the position where

  Thereafter, the second base portion 320 is lowered using the push-up mechanism 323. Accordingly, as illustrated in FIG. 11, the pressing portions 333 of the plurality of second gripping bodies 330_2 are pushed down by the lower surface of the second base portion 320, and the plurality of second gripping bodies 330_2 rotate around the rotation shaft 332. The gripper 331 of the plurality of second grippers 330_2 grips the peripheral edge of the wafer W.

  On the other hand, as shown in FIG. 12, the plurality of first gripping bodies 330 </ b> _ <b> 1 have the first recesses 325 </ b> _ <b> 1 disposed at positions corresponding to the pressing portions 333, so It does not become a state. Therefore, the plurality of first gripping bodies 330_1 are not gripping the wafer W.

  Thereby, the state in which the wafer W is held by the first holding body 330_1 is switched to the state in which the wafer W is held by the second holding body 330_2.

  As shown in FIG. 7, the through hole 312 formed in the first base portion 310 has the first base portion 310 so that the rotation of the first base portion 310 is not hindered by the support column 321 of the second base portion 320. It has the shape extended along the circumferential direction.

  Further, as shown in FIGS. 6 and 7, a plurality of (here, six) locking portions 315 are provided on the upper surface of the first base portion 310, and the peripheral portion of the second base portion 320 is A plurality of (here, six) notches 327 are formed. As shown in FIG. 7, when the plurality of second recesses 325_2 are arranged at positions corresponding to the plurality of second gripping bodies 330_2, the locking portion 315 is on one end in the rotation direction of the notch 327. When the plurality of first recesses 325_1 are arranged at positions corresponding to the plurality of first gripping bodies 330_1 as shown in FIG. 10, the other end portion in the rotation direction of the notch portion 327 It is comprised so that it may contact | abut.

  As described above, the substrate holding mechanism 30A according to the second embodiment includes a state in which the wafer W is gripped by the plurality of first grippers 330_1 and a plurality of second grips that can operate independently of the first grippers 330_1. The state in which the wafer W is held by the body 330_2 can be switched.

  In the second embodiment, the control unit 15 performs the switching process between the first gripping body 330_1 and the second gripping body 330_2 described above during the dissolution processing liquid supply process (step S107 in FIG. 4). For example, after supplying IPA as a dissolution processing liquid to the wafer W for a predetermined time, the control unit 15 stops the supply of IPA and the rotation of the wafer W, and performs the switching process described above to start from the first gripper 330_1. After switching to the second gripping body 330_2, the supply of IPA and the rotation of the wafer W are restarted. As a result, even if the processing film and the particles P are attached to the first gripping body 330_1, the wafer W can be prevented from being soiled or dusted by changing to the second gripping body 330_2. it can.

  As shown in FIG. 6, the substrate cleaning apparatus 14A according to the second embodiment includes a recovery cup 50A. The recovery cup 50 </ b> A includes an outer cup 53 and an inner cup 54 disposed on the inner side of the outer cup 53. The inner cup 54 receives liquid scattered from the lower surface of the wafer W. Further, the inner cup 54 is formed lower than the outer cup 53, and between the outer cup 53 and the inner cup 54, the liquid scattered from the upper surface of the wafer W is received and discharged to the liquid discharge port 51. A liquid path is formed. Thus, the recovery cup 50 </ b> A can separate the liquid splashed from the upper surface of the wafer W and the liquid splashed from the lower surface of the wafer W.

  In each of the embodiments described above, the single substrate cleaning apparatus 14 or 14A performs all of the film forming process liquid supply process, the peeling process liquid supply process, and the dissolution process liquid supply process. 14 may be shared.

  Further effects and modifications can be easily derived by those skilled in the art. Thus, the broader aspects of the present invention are not limited to the specific details and representative embodiments shown and described above. Accordingly, various modifications can be made without departing from the spirit or scope of the general inventive concept as defined by the appended claims and their equivalents.

W Wafer 1 Substrate cleaning system 14 Substrate cleaning device 45a Chemical solution supply source 45b Film formation processing solution supply source 45c Stripping treatment solution supply source 45d Dissolution processing solution supply source 310 First base portion 320 Second base portion 323 Push-up mechanism 325_1 First recess 325_2 2nd recessed part 330_1 1st holding body 330_2 2nd holding body

Claims (9)

A film forming process liquid supply step for supplying a film forming process liquid for forming a film on the substrate containing a volatile component to the substrate;
A stripping process for supplying pure water as a stripping treatment liquid for stripping the treatment film from the substrate to a treatment film formed by solidifying or curing the film deposition treatment liquid on the substrate by volatilization of the volatile component. A liquid supply process;
And after the stripping treatment liquid supply step, a dissolution treatment liquid supply step of supplying a dissolution treatment liquid for dissolving the treatment film with respect to the treatment film,
The peeling treatment liquid supply step includes
A substrate cleaning method, wherein a pure liquid as the stripping treatment liquid is supplied to the treatment film after a mixed liquid obtained by mixing a liquid having a surface tension smaller than that of pure water and pure water is supplied. The peeling treatment liquid supply step includes
The liquid and pure water are respectively supplied to the treatment film, and the liquid and pure water are mixed on the treatment film, thereby supplying the mixed liquid to the treatment film. The substrate cleaning method according to claim 1. The peeling treatment liquid supply step includes
The substrate cleaning method according to claim 2, wherein pure water is supplied to the treatment film to deposit pure water on the treatment film, and then the mixed solution is supplied to the treatment film.   The substrate cleaning method according to claim 1, wherein the liquid is IPA.   The substrate cleaning method according to claim 4, wherein the IPA is heated IPA.   The substrate cleaning method according to claim 4, wherein the liquid mixture has an IPA concentration of less than 25%. The dissolution treatment liquid supply step includes
Using a holding unit comprising a plurality of first gripping bodies for gripping the peripheral edge of the substrate and a plurality of second gripping bodies for gripping the peripheral edge of the substrate operable independently of the first gripping body, The substrate cleaning method according to claim 1, wherein a state in which the peripheral edge portion of the substrate is gripped by the plurality of first grippers and a state in which the peripheral edge portion of the substrate is gripped by the plurality of second grippers are switched. A film-forming treatment liquid supply unit that supplies a film-forming treatment liquid containing a volatile component to form a film on the substrate;
A stripping process for supplying pure water as a stripping treatment liquid for stripping the treatment film from the substrate to a treatment film formed by solidifying or curing the film deposition treatment liquid on the substrate by volatilization of the volatile component. A liquid supply unit;
A dissolution treatment liquid supply unit for supplying a dissolution treatment liquid for dissolving the treatment film with respect to the treatment film,
The peeling treatment liquid supply unit is
A substrate cleaning system for supplying pure water as the stripping treatment liquid after supplying a mixed liquid obtained by mixing a liquid having a surface tension smaller than that of pure water and pure water to the treatment film. A computer-readable storage medium that operates on a computer and stores a program for controlling the substrate cleaning system,
A storage medium that, when executed, causes a computer to control the substrate cleaning system so that the substrate cleaning method according to claim 1 is performed.

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