JPS63124616A - Multiplexer - Google Patents

Multiplexer

Info

Publication number
JPS63124616A
JPS63124616A JP27069886A JP27069886A JPS63124616A JP S63124616 A JPS63124616 A JP S63124616A JP 27069886 A JP27069886 A JP 27069886A JP 27069886 A JP27069886 A JP 27069886A JP S63124616 A JPS63124616 A JP S63124616A
Authority
JP
Japan
Prior art keywords
control line
nmosfet
metal oxide
logic
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP27069886A
Other languages
Japanese (ja)
Inventor
Masayuki Hata
雅之 畑
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP27069886A priority Critical patent/JPS63124616A/en
Publication of JPS63124616A publication Critical patent/JPS63124616A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To constitute a multiplexer with priority and a few number of transistors (TR) by constituting the titled multiplexer by a 1st metal oxide film field effect TR MOSFET, a complementary conduction MOSFET and a 2nd MOSFET and using a 2nd electrodes of a 1st MOSFET and the 2nd MOSFET as the outputs. CONSTITUTION:With a 1st control line 1 at logic 'H', the 1st NMOSFET 5 is turned on and the logic state of a 1st signal line 3 is selected. With the 1st control line 1 at logic 'L' and the a control line at logic 'H', although the 1st NMOSFET 5 is turned off, the PMOSFET 7 is turned on and the NMOSFET 8 is turned off. Then the 2nd NMOSFET 6 is turned on to give logic 'H' of a 2nd control line 2 to the gate terminal of the 2nd NMOSFET 6 and only the logical state of a 2nd signal line 4 is selected. That is, either the 1st signal line 3 or the 2nd signal line 4 is selected optionally by controlling the level of the 1st and 2nd control lines 1, 2.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、優先度を有し、構成に要するトランジスタ
数の少ないマルチプレクサに関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a multiplexer that has priority and requires a small number of transistors to be constructed.

〔従来の技術〕[Conventional technology]

第2図は従来の制御線に優先度を設けたマルチプレクサ
の構成を示す図である。この図において、1は第1の制
am、2は前記第1の制御線1より優先度の低い第2の
制御線、3,4は第1および第2の信号線、5は前記第
1の制御線1がゲート端子に、前記第1の信号線3が第
1の電極に接続されている第1のNチャネル金属酸化膜
電界効果トランジスタ(以下Nチャネル金属酸化膜電界
効果トランジスタをNMOSFETと称す)、6は前記
第2の信号線4が第1の電極に接続されている第2のN
MOSFET、9は前記第2の制ga線2に接続されて
いるインバータ回路、10は前記インバータ回路9の出
力と前記第1の制御線1が入力に接続されているNOR
回路、11は前記第1のNMOSFET5の第2の電極
と前記第2のNMOSFET6の第2の電極とが接続さ
れたマルチプレクサの出力である。
FIG. 2 is a diagram showing the configuration of a conventional multiplexer in which priorities are assigned to control lines. In this figure, 1 is a first control line, 2 is a second control line with a lower priority than the first control line 1, 3 and 4 are the first and second signal lines, and 5 is the first control line. A first N-channel metal oxide field effect transistor (hereinafter N-channel metal oxide field effect transistor is referred to as NMOSFET) has a control line 1 connected to a gate terminal and a first signal line 3 connected to a first electrode. ), 6 is a second N signal line to which the second signal line 4 is connected to the first electrode.
MOSFET, 9 is an inverter circuit connected to the second control line 2, 10 is a NOR whose input is connected to the output of the inverter circuit 9 and the first control line 1.
The circuit 11 is the output of a multiplexer in which the second electrode of the first NMOSFET 5 and the second electrode of the second NMOSFET 6 are connected.

次に動作について説明する。Next, the operation will be explained.

第1の制御線1と第2の制御線2が論理“L”のときは
第1のNMOSFET5と第2のNMOSFET6はと
もにオフされ、第1の信号線3と第2の信号線4の論理
状態は選択されない。
When the first control line 1 and the second control line 2 are at logic "L", both the first NMOSFET 5 and the second NMOSFET 6 are turned off, and the logic of the first signal line 3 and the second signal line 4 is No state is selected.

第1の制御線1が論理“H”のとき、第1のNMOSF
ET5はオンされ、マルチプレクサの出力11に第1の
信号線3の論理状態が選択される。しかし、このとき第
2の制御線2の状態にかかわらず第2のNMOSFET
6はオフされ、第2の信号線4の論理状態は選択されな
い。第1の制御線1が論理“L”で、かつ第2の制御線
2が論理“H′”のとき、第1のNMOSFET5がオ
フ、第2のNMOSFET6がオンとなり、第2の信号
線4の論理状態が選択される。
When the first control line 1 is at logic “H”, the first NMOSF
ET5 is turned on and the logic state of the first signal line 3 is selected for the output 11 of the multiplexer. However, at this time, regardless of the state of the second control line 2, the second NMOSFET
6 is turned off and the logic state of the second signal line 4 is not selected. When the first control line 1 is at logic "L" and the second control line 2 is at logic "H'", the first NMOSFET 5 is turned off, the second NMOSFET 6 is turned on, and the second signal line 4 The logical state of is selected.

〔発明が解決しようとする問題点〕 上記のような従来のマルチプレクサでは、第1および第
2の制御線1,2に優先度をつけるために2つの素子、
インバータ回路9とNOR回路10が必要であり、トラ
ンジスタの数で6素子も付加しなければならず、回路が
大きくなるという問題点があった。
[Problems to be Solved by the Invention] In the conventional multiplexer as described above, two elements are used to prioritize the first and second control lines 1 and 2.
An inverter circuit 9 and a NOR circuit 10 are required, and six elements must be added in terms of the number of transistors, resulting in a problem that the circuit becomes large.

この発明は、かかる問題点を解決するためになされたも
ので、優先度を有し、少ないトランジスタ数で実現でき
るマルチプレクサを得ることを目的とする。
The present invention was made to solve these problems, and aims to provide a multiplexer that has priority and can be realized with a small number of transistors.

〔問題点を解決するための手段〕[Means for solving problems]

この発明に係るマルチプレクサは、第1の電極が第1の
信号線と接続され、ゲート端子が第1の制御線に接続さ
れた第1の金属酸化膜電界効果トランジスタと、ドレイ
ンが互いに結合され、それらのゲート端子がともに第1
の制御線に接続されるとともに、一方のソースに第2の
制御線が接続され、他方のソースに電源またはグランド
を接続した相補の伝導性の金属酸化膜電界効果トランジ
スタと、そのゲート端子が相補の伝導性の金属酸化膜電
界効果トランジスタのドレイン端子に接続され、その第
1の電極が第2の信号線に接続されている第2の金属酸
化膜電界効果トランジスタとから構成され、第1の金属
酸化膜電界効果トランジスタの第2の電極および第2の
金属酸化膜電界効果トランジスタの第2の電極を出力と
したものである。
A multiplexer according to the present invention includes a first metal oxide film field effect transistor whose first electrode is connected to a first signal line, whose gate terminal is connected to a first control line, and whose drains are coupled to each other, Their gate terminals are both the first
a complementary conductive metal oxide field effect transistor with one source connected to a second control line and the other source connected to a power supply or ground; a second metal oxide field effect transistor connected to the drain terminal of the conductive metal oxide field effect transistor, the first electrode of which is connected to the second signal line; The second electrode of the metal oxide field effect transistor and the second electrode of the second metal oxide field effect transistor are outputs.

〔作用〕[Effect]

この発明においては、第1の制御線により第1の金属酸
化膜電界効果トランジスタのゲートが制御され、第1の
金属酸化膜電界効果トランジスタのゲートがオフで、か
つ第2の制御線が所定のレベルとなっているときに、第
2の制御線のレベルが第2の金属酸化膜電界効果トラン
ジスタのゲート端子に送られてゲートを制御する。
In this invention, the gate of the first metal oxide field effect transistor is controlled by the first control line, the gate of the first metal oxide field effect transistor is off, and the second control line is in a predetermined state. When the metal oxide field effect transistor is at a high level, the level on the second control line is sent to the gate terminal of the second metal oxide field effect transistor to control the gate.

〔実施例〕〔Example〕

第1図はこの発明のマルチプレクサの一実施例の構成を
示す図である。この図において、第2図と同一符号は同
一部分を示し、7はソースに前記第2の制御線2が接続
され、ゲート端子に前記第1の制御線1が接続されたP
MO3FET、8はドレインに前記PMO5FET7の
ドレインが接続され、ソースが接地され、ゲート端子に
前記第1の制御線1が接続されたNMO3FETであり
、これらは相補の伝導性の対となっている。
FIG. 1 is a diagram showing the configuration of an embodiment of the multiplexer of the present invention. In this figure, the same reference numerals as in FIG. 2 indicate the same parts, and reference numeral 7 denotes P to which the second control line 2 is connected to the source and the first control line 1 is connected to the gate terminal.
The MO3FET 8 is an NMO3FET whose drain is connected to the drain of the PMO5FET 7, whose source is grounded, and whose gate terminal is connected to the first control line 1, and these form a pair of complementary conductivity.

次に動作について説明する。Next, the operation will be explained.

第1の制御線1と第2の制御線2が論理“L′”のとき
、第1のNMOSFET5と第2のNMOSFET6は
ともにオフされ、第1の信号線3と第2の信号線4の論
理状態はともに選択されない。
When the first control line 1 and the second control line 2 are at logic "L'", the first NMOSFET 5 and the second NMOSFET 6 are both turned off, and the first signal line 3 and the second signal line 4 are turned off. Neither logic state is selected.

第1の制御線1が論理“H”のとき、第1のNMOSF
ET5はオンされ、第1の信号線3の論理状態が選択さ
れる。しかし、このときPMO3FET7はオフ、NM
OSFET8はオンで、第、2のNMOSFET6のゲ
ート端子に論理“L′を伝えるため、第2の制御線2の
状態にかかわらず第2のNMOSFET6はオフされ、
第2の信号線4の論理状態が選択されない。
When the first control line 1 is at logic “H”, the first NMOSF
ET5 is turned on and the logic state of the first signal line 3 is selected. However, at this time, PMO3FET7 is off and NM
Since the OSFET 8 is on and transmits the logic "L" to the gate terminal of the second NMOSFET 6, the second NMOSFET 6 is turned off regardless of the state of the second control line 2.
The logic state of the second signal line 4 is not selected.

しかし、第1の制御線1が論理゛L ”で、かつ第2の
制御線2が論理14H″のとき、第1のNM03FET
5はオフであるが、PMO3FET7がオン、NMOS
FET8がオフであり、第2のNMOSFET6のゲー
ト端子に第2の制御線2の論理“HIIを伝えるため第
2のNMOSFET6はオンとなり、第2の信号線4の
論理状態のみが選択される。
However, when the first control line 1 is at logic "L" and the second control line 2 is at logic 14H", the first NM03FET
5 is off, but PMO3FET7 is on, NMOS
The FET 8 is off, and the second NMOSFET 6 is turned on to transmit the logic "HII" on the second control line 2 to the gate terminal of the second NMOSFET 6, so that only the logic state of the second signal line 4 is selected.

すなわち、第1の制御線1および第2の制御線2のレベ
ルを制御することにより、第1の信号線3および第2の
信号線4のうちの一方を任意に選択することができる。
That is, by controlling the levels of the first control line 1 and the second control line 2, one of the first signal line 3 and the second signal line 4 can be arbitrarily selected.

〔発明の効果〕〔Effect of the invention〕

この発明は以上説明したとおり、第1の電極が第1の信
号線と接続され、ゲート端子が第1の制御線に接続され
た第1の金属酸化膜電界効果トランジスタと、ドレイン
が互いに結合され、それらのゲート端子がともに第1の
制御線に接続されるとともに、一方のソースに第2の制
御線がvi続され、他方のソースに電源またはグランド
を接続した相補の伝導性の金属酸化膜電界効果トランジ
スタと、そのゲート端子が相補の伝導性の金属酸化膜電
界効果トランジスタのドレイン端子に接続され、その第
1の電極が第2の信号線に接続されている第2の金属酸
化膜電界効果トランジスタとから構成され、第1の金属
酸化膜電界効果トランジスタの第2の電極および第2の
金属酸化膜電界効果トランジスタの第2の電極を出力と
したので、少ないトランジスタ数で優先度のあるマルチ
プレクサを構成できるという効果がある。
As described above, the present invention includes a first metal oxide film field effect transistor whose first electrode is connected to a first signal line, whose gate terminal is connected to a first control line, and whose drain is connected to each other. , complementary conductive metal oxide films whose gate terminals are both connected to the first control line, a second control line is connected to one source, and a power supply or ground is connected to the other source. a field effect transistor and a second metal oxide field having its gate terminal connected to the drain terminal of a complementary conducting metal oxide field effect transistor and its first electrode connected to a second signal line; The second electrode of the first metal oxide field effect transistor and the second electrode of the second metal oxide field effect transistor are used as outputs. This has the effect of configuring a multiplexer.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの発明のマルチプレクサの一実施例の構成を
示す図、第2図は従来のマルチプレクサの構成を示す図
である。 図において、1は第1の制御線、2は第2の制御線、3
は第1の信号線、4は第2の信号線、5は第1のNMO
SFET、6は第2のNMOS FET、7thPMO
5FET、8はNMOSFET、11はマルチプレクサ
の出力である。 なお、各図中の同一符号は同一または相九部分を示す。
FIG. 1 is a diagram showing the configuration of an embodiment of the multiplexer of the present invention, and FIG. 2 is a diagram showing the configuration of a conventional multiplexer. In the figure, 1 is the first control line, 2 is the second control line, 3
is the first signal line, 4 is the second signal line, and 5 is the first NMO
SFET, 6 is the second NMOS FET, 7th PMO
5 is an FET, 8 is an NMOSFET, and 11 is an output of a multiplexer. Note that the same reference numerals in each figure indicate the same or identical parts.

Claims (1)

【特許請求の範囲】[Claims] 第1の電極が第1の信号線と接続され、ゲート端子が第
1の制御線に接続された第1の金属酸化膜電界効果トラ
ンジスタと、ドレインが互いに結合され、それらのゲー
ト端子がともに前記第1の制御線に接続されるとともに
、一方のソースに第2の制御線が接続され、他方のソー
スに電源またはグランドを接続した相補の伝導性の金属
酸化膜電界効果トランジスタと、そのゲート端子が前記
相補の伝導性の金属酸化膜電界効果トランジスタのドレ
イン端子に接続され、その第1の電極が第2の信号線に
接続されている第2の金属酸化膜電界効果トランジスタ
とから構成され、前記第1の金属酸化膜電界効果トラン
ジスタの第2の電極および前記第2の金属酸化膜電界効
果トランジスタの第2の電極を出力としたことを特徴と
するマルチプレクサ。
a first metal oxide film field effect transistor having a first electrode connected to a first signal line and a gate terminal connected to a first control line; a complementary conductive metal oxide field effect transistor connected to a first control line, having one source connected to a second control line and the other source connected to a power supply or ground; and a gate terminal thereof; a second metal oxide field effect transistor connected to the drain terminal of the complementary conductive metal oxide field effect transistor and having a first electrode connected to a second signal line; A multiplexer characterized in that a second electrode of the first metal oxide field effect transistor and a second electrode of the second metal oxide field effect transistor are outputs.
JP27069886A 1986-11-13 1986-11-13 Multiplexer Pending JPS63124616A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP27069886A JPS63124616A (en) 1986-11-13 1986-11-13 Multiplexer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27069886A JPS63124616A (en) 1986-11-13 1986-11-13 Multiplexer

Publications (1)

Publication Number Publication Date
JPS63124616A true JPS63124616A (en) 1988-05-28

Family

ID=17489712

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27069886A Pending JPS63124616A (en) 1986-11-13 1986-11-13 Multiplexer

Country Status (1)

Country Link
JP (1) JPS63124616A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1619797A2 (en) * 2004-07-14 2006-01-25 Via Technologies, Inc. Dynamic multi-input priority multiplexer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1619797A2 (en) * 2004-07-14 2006-01-25 Via Technologies, Inc. Dynamic multi-input priority multiplexer
EP1619797A3 (en) * 2004-07-14 2007-05-09 Via Technologies, Inc. Dynamic multi-input priority multiplexer

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