JPS6312373B2 - - Google Patents
Info
- Publication number
- JPS6312373B2 JPS6312373B2 JP56195439A JP19543981A JPS6312373B2 JP S6312373 B2 JPS6312373 B2 JP S6312373B2 JP 56195439 A JP56195439 A JP 56195439A JP 19543981 A JP19543981 A JP 19543981A JP S6312373 B2 JPS6312373 B2 JP S6312373B2
- Authority
- JP
- Japan
- Prior art keywords
- weight
- parts
- pbo
- sio
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 35
- 229910052573 porcelain Inorganic materials 0.000 claims description 31
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 23
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 claims description 20
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 19
- 239000000126 substance Substances 0.000 claims description 16
- 239000000919 ceramic Substances 0.000 claims description 15
- 229910002367 SrTiO Inorganic materials 0.000 claims description 14
- 239000003990 capacitor Substances 0.000 claims description 13
- 239000011810 insulating material Substances 0.000 claims description 13
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- 229910052593 corundum Inorganic materials 0.000 claims description 6
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 4
- 229910052681 coesite Inorganic materials 0.000 claims 2
- 229910052906 cristobalite Inorganic materials 0.000 claims 2
- 239000000377 silicon dioxide Substances 0.000 claims 2
- 235000012239 silicon dioxide Nutrition 0.000 claims 2
- 229910052682 stishovite Inorganic materials 0.000 claims 2
- 229910052905 tridymite Inorganic materials 0.000 claims 2
- 239000000203 mixture Substances 0.000 description 11
- 238000009792 diffusion process Methods 0.000 description 8
- 239000000843 powder Substances 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- 239000003985 ceramic capacitor Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- 239000000020 Nitrocellulose Substances 0.000 description 1
- -1 PbF 2 Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- BDAGIHXWWSANSR-NJFSPNSNSA-N hydroxyformaldehyde Chemical compound O[14CH]=O BDAGIHXWWSANSR-NJFSPNSNSA-N 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N lead(II) oxide Inorganic materials [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229920001220 nitrocellulos Polymers 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000018 strontium carbonate Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1272—Semiconductive ceramic capacitors
- H01G4/1281—Semiconductive ceramic capacitors with grain boundary layer
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
- C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
- C04B35/465—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates
- C04B35/47—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on strontium titanates
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Insulating Materials (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Ceramic Capacitors (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56195439A JPS5896719A (ja) | 1981-12-04 | 1981-12-04 | コンデンサ用半導体磁器及びその製造方法 |
| DE8282108979T DE3274734D1 (en) | 1981-10-01 | 1982-09-28 | Dielectric ceramic materials with insulated boundaries between crystal grains, and process for preparation |
| EP82108979A EP0076456B1 (en) | 1981-10-01 | 1982-09-28 | Dielectric ceramic materials with insulated boundaries between crystal grains, and process for preparation |
| US06/443,782 US4405479A (en) | 1981-12-04 | 1982-11-22 | Dielectric ceramic materials with insulated boundaries between crystal grains, and process for preparation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56195439A JPS5896719A (ja) | 1981-12-04 | 1981-12-04 | コンデンサ用半導体磁器及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5896719A JPS5896719A (ja) | 1983-06-08 |
| JPS6312373B2 true JPS6312373B2 (en, 2012) | 1988-03-18 |
Family
ID=16341074
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56195439A Granted JPS5896719A (ja) | 1981-10-01 | 1981-12-04 | コンデンサ用半導体磁器及びその製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US4405479A (en, 2012) |
| JP (1) | JPS5896719A (en, 2012) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4814104A (en) * | 1987-02-05 | 1989-03-21 | Uop | Tertiary alkanolamine absorbent containing an ethyleneamine promoter and its method of use |
| KR970001061B1 (ko) * | 1994-04-20 | 1997-01-25 | 한국과학기술연구원 | 경계층 콘덴서용 유전체 자기 조성물 및 그 제조방법 |
| US8178456B2 (en) * | 2008-07-08 | 2012-05-15 | Ian Burn Consulting, Inc. | Sintered dielectric ceramic, composition for making, and use thereof in multilayer capacitor and energy storage device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3933668A (en) * | 1973-07-16 | 1976-01-20 | Sony Corporation | Intergranular insulation type polycrystalline ceramic semiconductive composition |
-
1981
- 1981-12-04 JP JP56195439A patent/JPS5896719A/ja active Granted
-
1982
- 1982-11-22 US US06/443,782 patent/US4405479A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US4405479A (en) | 1983-09-20 |
| JPS5896719A (ja) | 1983-06-08 |
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