JPS63120444A - Interlayer insulating film - Google Patents
Interlayer insulating filmInfo
- Publication number
- JPS63120444A JPS63120444A JP26627286A JP26627286A JPS63120444A JP S63120444 A JPS63120444 A JP S63120444A JP 26627286 A JP26627286 A JP 26627286A JP 26627286 A JP26627286 A JP 26627286A JP S63120444 A JPS63120444 A JP S63120444A
- Authority
- JP
- Japan
- Prior art keywords
- film
- boron
- nitrogen
- thin film
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011229 interlayer Substances 0.000 title claims abstract description 11
- 239000010408 film Substances 0.000 claims abstract description 60
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 41
- 239000010409 thin film Substances 0.000 claims abstract description 31
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052796 boron Inorganic materials 0.000 claims abstract description 24
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 22
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 21
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 9
- 239000010703 silicon Substances 0.000 claims abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000010410 layer Substances 0.000 claims abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 9
- 239000003513 alkali Substances 0.000 abstract description 9
- 230000000694 effects Effects 0.000 abstract description 9
- 150000002500 ions Chemical class 0.000 abstract description 9
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 9
- 238000000034 method Methods 0.000 abstract description 8
- 238000002161 passivation Methods 0.000 abstract description 6
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract description 6
- 239000007789 gas Substances 0.000 abstract description 5
- 239000000463 material Substances 0.000 abstract description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 1
- CFOAUMXQOCBWNJ-UHFFFAOYSA-N [B].[Si] Chemical compound [B].[Si] CFOAUMXQOCBWNJ-UHFFFAOYSA-N 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
- 238000005530 etching Methods 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000000862 absorption spectrum Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Landscapes
- Local Oxidation Of Silicon (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、低容量でかつ耐湿性、耐アルカリイオン性に
優れる層間絶縁膜に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to an interlayer insulating film that has low capacity and excellent moisture resistance and alkali ion resistance.
従来、多層配線の層間絶縁膜として用いられてきたシリ
コン酸化膜は、その比誘電率は約４と小さいものの、耐
湿性、耐アルカリイオン性共に低く、配線の信頼性の点
で問題があった。また、シリコン酸化膜にリンを添加し
たリンガラス膜は、耐アルカリイオン性は飛躍的に向上
するものの、耐湿性は低く、吸湿した水分と膜中のリン
が反応してリン酸を形成し、それが配線材料を腐食する
という問題点があった。さらにいずれの膜においても、
膜厚を厚くするとクラック等が生じ、また段差被覆性に
劣るという欠点があった。Although the silicon oxide film conventionally used as an interlayer insulating film for multilayer wiring has a small dielectric constant of approximately 4, it has low moisture resistance and alkali ion resistance, which poses problems in terms of wiring reliability. . In addition, although phosphorus glass film, which is made by adding phosphorus to silicon oxide film, has dramatically improved alkali ion resistance, its moisture resistance is low, and absorbed moisture reacts with phosphorus in the film to form phosphoric acid. There was a problem that it corroded the wiring material. Furthermore, in any film,
When the film thickness is increased, cracks occur, and the step coverage is poor.
一方、プラズマＣＶＤ法で形成したシリコン窒化膜は、
耐湿性、耐アルカリイオン性共に優れ、かつ低温形成が
可能なことから、特にアルミニウムを配線材料に用いる
多層配線において、シリコン酸化膜あるいはリンガラス
膜に替る層間絶縁膜として適用が図られてきている。こ
の膜は段差被覆性も良好で厚膜化してもクラックが生じ
ない。しかし、シリコン窒化膜の比誘電率は約７とシリ
コン酸化膜での値よりも大きく、特に超高速と目指すデ
バイスにおいては配線の寄生容量を低減する目的から、
シリコン窒化膜の低誘電率化が望まれていた。On the other hand, the silicon nitride film formed by plasma CVD method is
Because it has excellent moisture resistance and alkali ion resistance, and can be formed at low temperatures, it is being used as an interlayer insulating film to replace silicon oxide films or phosphorous glass films, especially in multilayer wiring that uses aluminum as the wiring material. . This film also has good step coverage, and no cracks occur even when the film is thickened. However, the dielectric constant of silicon nitride film is approximately 7, which is higher than that of silicon oxide film, and in order to reduce the parasitic capacitance of wiring, especially in devices aiming for ultra-high speed,
It has been desired to lower the dielectric constant of silicon nitride films.
シリコン、ボロンおよび窒素を主成分とし、少おいては
膜中のボロン濃度が増加するにしたがって、膜の比誘電
率が低減しシリコン酸化膜の値よｐも小さな値が実現で
きることが分っている（特願昭６０−２９９４０２号）
。It has been found that silicon, boron, and nitrogen are the main components, and as the boron concentration in the film increases, the dielectric constant of the film decreases and a value of p smaller than that of a silicon oxide film can be achieved. (Patent Application No. 60-299402)
.
しかしＢＮ薄膜は、例えば１４００℃程度の高温常圧Ｃ
ＶＤ法で形成した場合でも吸湿性を有することが知られ
ており、したがって、前記のシリコン。However, the BN thin film is produced at a high temperature of about 1,400 degrees Celsius at normal pressure.
It is known that even when formed by the VD method, it has hygroscopic properties, and therefore, the above-mentioned silicon.
ボロン２および窒素を主成分とする絶縁薄膜においても
薄膜の誘電率が低減する、すなわち膜中のボロン濃度が
増加するに伴って、膜の吸湿性が増加することが懸念さ
れていた。Even in insulating thin films containing boron 2 and nitrogen as main components, there has been concern that as the dielectric constant of the thin film decreases, that is, as the boron concentration in the film increases, the hygroscopicity of the film increases.
本発明の目的は、パッシベーション効果の優れた低誘電
率で厚膜可能な層間絶縁膜を提供することにある。An object of the present invention is to provide an interlayer insulating film that has an excellent passivation effect, has a low dielectric constant, and can be made thick.
本発明は、シリコン、ボロンおよび窒素を主成分とする
絶縁薄膜、あるいはボロンおよび窒素を主成分とする絶
縁薄膜の上にシリコン窒化膜を積層することを最も主要
な特徴どする。従来技術による層間絶縁膜構成は単一の
層で形成されていたのに対して、本発明では積層の層間
絶縁膜構成を用いる点が異なる。The most important feature of the present invention is that a silicon nitride film is laminated on an insulating thin film containing silicon, boron, and nitrogen as main components, or on an insulating thin film containing boron and nitrogen as main components. The interlayer insulating film structure according to the prior art is formed of a single layer, whereas the present invention is different in that a laminated interlayer insulating film structure is used.
第１図は本発明の絶縁膜構成を示す図であって、１はシ
リコン、ボロンおよび窒素、あるいはボロンおよび窒素
を主成分とする絶縁薄膜、２はシリコン窒化膜である。FIG. 1 is a diagram showing the structure of an insulating film according to the present invention, where 1 is an insulating thin film mainly composed of silicon, boron and nitrogen, or boron and nitrogen, and 2 is a silicon nitride film.
プラズマＣＶＤ法によｐＳｉＨ４−Ｂ ２ Ｈ６−ＮＩ
ｈあるいはＢ２’Ｈ６−ＮＨ１１混合ガス系を用いて形
成された絶縁薄膜１は低比誘電率材料であり、シリコン
酸化膜での値よりも小さな比誘電率をもつ。一方、プラ
ズマＣＶＤ法により、５ｉＨ４−ＮＨｓ混合ガス系を用
いて形成されたシリコン窒化膜２は水分およびアルカリ
イオンに対して極めて高いバツシベーンヨン効果を有す
ることは周知の事実である。pSiH4-B 2 H6-NI by plasma CVD method
The insulating thin film 1 formed using the h or B2'H6-NH11 mixed gas system is a low dielectric constant material and has a dielectric constant smaller than that of a silicon oxide film. On the other hand, it is a well-known fact that the silicon nitride film 2 formed by the plasma CVD method using a 5iH4-NHs mixed gas system has an extremely high bombardment effect against moisture and alkali ions.
以下図面にて、この積層絶縁薄膜の特性を述べる。The characteristics of this laminated insulating thin film will be described below with reference to the drawings.
第２図は、第１図に示した積層絶縁薄膜において、絶縁
薄膜１の膜厚を０．８５μｍとし、シリコン窒化膜２の
膜厚を帆１５μｍとした場合の実効的な比誘電率の絶縁
薄膜１中のボロン含有量に対するない場合に比べて比誘
電率は、７〜１０％程度大きくなっているが、その値は
シリコン酸化膜の値と同等かより小さな値となっている
。なお、第２図中、横座標［Ｂ］／ （［Ｓｉ） ”
［Ｂ］ ＋ ［Ｎ） ） ＝ Ｏのとき［Ｓｉ） ＝
０．４３ 、 （Ｎ） ＝ ０．５７゜横座標＝ ０．
５１ のとき［Ｓｉ］ ＝ ０ 、 ［Ｎ］ ＝ ０．
４９で、その間横座標の増加と共に［Ｓｉ）、 ［Ｎ）
共単調に減少している。Figure 2 shows the effective dielectric constant of the laminated insulating thin film shown in Figure 1 when the thickness of the insulating thin film 1 is 0.85 μm and the thickness of the silicon nitride film 2 is 15 μm. The relative permittivity of the thin film 1 is about 7 to 10% higher than that of the case without boron content, but the value is equal to or smaller than that of a silicon oxide film. In addition, in Fig. 2, the abscissa [B]/([Si)”
[B] + [N)) = When O, [Si) =
0.43, (N) = 0.57° abscissa = 0.
51, [Si] = 0, [N] = 0.
49, while the abscissa increases [Si), [N]
Both are monotonically decreasing.
次に積層絶縁薄膜の耐湿性について述べる。Next, we will discuss the moisture resistance of laminated insulating thin films.
第３図は、最も吸湿性が高いボロンおよび窒素を主成分
とする絶縁薄膜について、シリコン窒化膜を積層した場
合の耐湿性改善効果を示したものである。シリコン窒化
膜を積層しない場合、堆積直後の膜とそれを３ケ月間空
気中に放置した膜との赤外吸収スペクトルの差スペクト
ル１テハ３４３５ｅｒｎ”−”付近の窒素−水素結合お
よび２５１０ｃｍ−”付近のボロン−水素結合の減少と
同時に、１３７５ ｅｍｕ”付近のボロン−窒素結合の
減少も観測され、吸湿による明らかな構造変化を生じて
いることを示している。しかし、シリコン窒化膜を積層
した試料においては、堆積直後の膜と３ケ月間空気中放
置した膜との赤外吸収スペクトルの差スペクトル２は、
両者の構造に有異な差が生じていないことを示しており
、シリコン窒化膜積層により、ボロンおよび窒素を主成
分とする絶縁薄膜の吸湿性が完全に防止されていること
が分る。また差スペクトル１および２の場合共、３８２
５ ｃｍ’−”付近に吸収の増加が観測されるが、これ
は空気中放置の間に試料表面に吸着した水分によるもの
でちゃ、吸湿によるものではない。なお１と２で縦軸の
原点の位置はずれて示しである。シリコン窒化膜は水分
だはでなくアルカリイオンに対しても高いパッシベーシ
ョン効果を有することから積層絶縁薄膜はアルカリイオ
ンに対しても高いパッシベーション効果が期待できる。FIG. 3 shows the effect of improving moisture resistance when a silicon nitride film is laminated on an insulating thin film whose main components are boron and nitrogen, which have the highest hygroscopicity. When silicon nitride films are not stacked, the difference in infrared absorption spectra between the film immediately after deposition and the film left in the air for 3 months is the nitrogen-hydrogen bond near 3435 ern''-'' and the nitrogen-hydrogen bond near 2510 cm-''. At the same time as the boron-hydrogen bond at 1375 emu'' decreased, the boron-nitrogen bond at around 1375 emu'' was also observed to decrease, indicating a clear structural change due to moisture absorption. However, in the case of a sample with stacked silicon nitride films, the difference spectrum 2 in the infrared absorption spectra between the film immediately after deposition and the film left in the air for 3 months is as follows.
This shows that there is no significant difference between the two structures, and it can be seen that the silicon nitride film stack completely prevents the hygroscopicity of the insulating thin film whose main components are boron and nitrogen. In addition, in both cases of difference spectra 1 and 2, 382
An increase in absorption is observed near 5 cm'-'', but this is due to moisture adsorbed on the sample surface while it was left in the air, and not due to moisture absorption. Note that 1 and 2 are the origin of the vertical axis. The position of is shown as being shifted.Since the silicon nitride film has a high passivation effect not only against moisture but also against alkali ions, a laminated insulating thin film can be expected to have a high passivation effect against alkali ions as well.
本発明の積層絶縁膜はＣＦ４／１０％Ｈ２混合ガスを用
いるＲＩＥで連続してエツチング可能である。第４図に
エツチング速度を示したが膜の組成を変化させても３５
０〜４８０ Ｘ／ｍｉｎのエツチング速度が得られる。The laminated insulating film of the present invention can be continuously etched by RIE using a CF4/10% H2 mixed gas. Figure 4 shows the etching rate, and even if the composition of the film is changed, the etching rate is 35%.
Etching rates of 0 to 480 X/min are obtained.
従って、積層構造にすることによるプロセス上の複雑さ
は生じず、シリコン窒化膜と同様にスルーホール加工が
行なえる。なお横座標の成分は第２図と同様である。Therefore, there is no process complexity caused by the layered structure, and through-hole processing can be performed in the same way as with silicon nitride films. Note that the components of the abscissa are the same as in FIG.
なお、本実施例ではシリコン、ボロンおよび窒素を主成
分とする絶縁薄膜、あるいはボロンおよび窒素を主成分
とする絶縁薄膜、およびシリコン窒化膜の形成にプラズ
マＣＶＤ法を用いだが、これらの形成に他の方法、たと
えばスパッタリング法を用いても、あるいは両者の形成
をそれぞれ他の方法で行なう組合せによっても行えるこ
とは明らかである。In this example, a plasma CVD method was used to form an insulating thin film containing silicon, boron, and nitrogen as main components, an insulating thin film containing boron and nitrogen as main components, and a silicon nitride film, but other methods may be used to form these. It is clear that the above method can be used, for example, a sputtering method, or by a combination of forming both using other methods.
以上説明したように、シリコン、ボロンおよび窒素、あ
るいはボロンおよび窒素を主成分とする絶縁薄膜とシリ
コン窒化膜の積層絶縁薄膜は厚膜化が可能で、シリコン
酸化膜の比誘電率と同等かあるいはよシ小さい比誘電率
を有し、かつ水分およびアルカリイオンに対して高いパ
ッシベーション効果を有する絶縁薄膜であるので、多層
配線における配線間および配線層間の寄生容量を低減で
きると共に、配線の信頼性を著しく向上できる利点があ
る。As explained above, a laminated insulating thin film consisting of silicon, boron and nitrogen, or an insulating thin film mainly composed of boron and nitrogen, and a silicon nitride film can be made thicker, and has a dielectric constant equal to or equal to that of silicon oxide film. It is an insulating thin film that has a very low dielectric constant and a high passivation effect against moisture and alkali ions, so it can reduce parasitic capacitance between interconnects and interconnect layers in multilayer interconnects, and improve interconnect reliability. There are advantages that can be significantly improved.
第１図は、本発明の積層絶縁薄膜の構造を示す。
第２図は、絶縁薄膜の比誘電率のボロン濃度依存性を示
し、本発明の積層絶縁薄膜構造とシリコン窒化膜を積層
しない構造の特性を示す。
第３図は、堆積直後および３ケ月間空気中放置した膜の
赤外吸収スペクトルの差スペクトルを示し、同図におい
て、
１は、ボロンおよび窒素を主成分とする絶縁薄膜のみ、
２は、ボロンおよび窒素を主成分とする絶縁薄膜の上に
シリコン窒化膜を積層した試料の特性を示す。
第４図は、絶縁薄膜のＲＩＥに対するエツチングレート
のボロン濃度依存性を示す。
第１図において、
１は低比誘電率絶縁薄膜
２はシリコン窒化膜
特許出願人 日本電信電話株式会社
代理人弁理士 玉 蟲 久 五 部（外２名）第１図
第 ２ 図FIG. 1 shows the structure of the laminated insulating thin film of the present invention. FIG. 2 shows the boron concentration dependence of the dielectric constant of the insulating thin film, and shows the characteristics of the laminated insulating thin film structure of the present invention and the structure in which no silicon nitride film is laminated. Figure 3 shows the difference spectrum of the infrared absorption spectra of the film immediately after deposition and after being left in the air for three months. The characteristics of a sample in which a silicon nitride film is laminated on an insulating thin film whose main component is nitrogen are also shown. FIG. 4 shows the boron concentration dependence of the etching rate for RIE of an insulating thin film. In Figure 1, 1 is a low relative dielectric constant insulating thin film 2 is a silicon nitride film Patent applicant: Nippon Telegraph and Telephone Co., Ltd. Representative Patent Attorney Hisako Tamamushi (2 others) Figure 1 Figure 2
Claims (1)
薄膜あるいはボロンおよび窒素を主成分とする薄膜を使
用し、上層としてシリコン窒化膜を使用した積層構造の
層間絶縁膜。An interlayer insulating film with a laminated structure in which the lower layer is a thin film mainly composed of silicon, boron, and nitrogen, or the main components are boron and nitrogen, and the upper layer is a silicon nitride film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26627286A JPS63120444A (en) | 1986-11-08 | 1986-11-08 | Interlayer insulating film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26627286A JPS63120444A (en) | 1986-11-08 | 1986-11-08 | Interlayer insulating film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63120444A true JPS63120444A (en) | 1988-05-24 |
Family
ID=17428661
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26627286A Pending JPS63120444A (en) | 1986-11-08 | 1986-11-08 | Interlayer insulating film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63120444A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03159124A (en) * | 1989-11-16 | 1991-07-09 | Nec Corp | Manufacture of semiconductor device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5471577A (en) * | 1977-11-18 | 1979-06-08 | Toshiba Corp | Production of semiconductor device |
-
1986
- 1986-11-08 JP JP26627286A patent/JPS63120444A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5471577A (en) * | 1977-11-18 | 1979-06-08 | Toshiba Corp | Production of semiconductor device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03159124A (en) * | 1989-11-16 | 1991-07-09 | Nec Corp | Manufacture of semiconductor device |
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