JPS63119551A - Forming method of patterned metal film - Google Patents
Forming method of patterned metal filmInfo
- Publication number
- JPS63119551A JPS63119551A JP26536786A JP26536786A JPS63119551A JP S63119551 A JPS63119551 A JP S63119551A JP 26536786 A JP26536786 A JP 26536786A JP 26536786 A JP26536786 A JP 26536786A JP S63119551 A JPS63119551 A JP S63119551A
- Authority
- JP
- Japan
- Prior art keywords
- metal film
- film
- photosensitive resin
- resin film
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 75
- 239000002184 metal Substances 0.000 title claims abstract description 75
- 238000000034 method Methods 0.000 title claims abstract description 31
- 239000011347 resin Substances 0.000 claims abstract description 48
- 229920005989 resin Polymers 0.000 claims abstract description 48
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 20
- 239000010931 gold Substances 0.000 claims description 20
- 229910052737 gold Inorganic materials 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 15
- 239000004020 conductor Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 15
- 230000004888 barrier function Effects 0.000 description 10
- 238000007747 plating Methods 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000005368 silicate glass Substances 0.000 description 2
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- BSIDXUHWUKTRQL-UHFFFAOYSA-N nickel palladium Chemical compound [Ni].[Pd] BSIDXUHWUKTRQL-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
し発明の目的コ
（産業上の利用分野）
本発明は半導体素子の実装技術に係わり、特に良好なパ
ターニングされた金属膜の形成方法に関する。DETAILED DESCRIPTION OF THE INVENTION OBJECTS OF THE INVENTION (Industrial Application Field) The present invention relates to semiconductor device packaging technology, and particularly to a method for forming a well-patterned metal film.
（従来の技術）
近年、半導体素子を搭載する各種電子機器の小型化、低
コスト化が要求されており、これに伴いコントロール用
・駆動用半導体素子の高密度化が必要とされ、これら半
導体素子の内部配線や外部取出し電極はますます微細化
する傾向にある。(Prior Art) In recent years, there has been a demand for miniaturization and cost reduction of various electronic devices equipped with semiconductor elements, and this has led to a need for higher density control and drive semiconductor elements. The trend is for internal wiring and external electrodes to become increasingly finer.
現在の半導体素子の実装技術において、半導体素子の電
極と外部端子との接続はワイヤーボンディング法による
ものがほとんどである。しかしこの方法では実装可能な
電極のピッチに限界が有ることが知られており、この方
法に代って種々のワイヤレスボンディング法が注目され
ている。In current semiconductor element mounting technology, the electrodes of the semiconductor element and external terminals are almost always connected by wire bonding. However, it is known that this method has a limit to the pitch of the electrodes that can be mounted, and various wireless bonding methods are attracting attention as an alternative to this method.
例えばフィルムキャリア実装方式−ＴＡＢ （Ｔａｐｅ
Ａｕｔｏｍａｔｅｄ ｂｏｎｄｉｎｇ）方式は、半導
体素子の電極上に外部取出し用突起電極、いわゆるバン
プを形成しておき、これをテープ上のフィンガーリード
に接合する方式である。For example, film carrier mounting method-TAB (Tape
The automated bonding method is a method in which protruding electrodes for external extraction, so-called bumps, are formed on the electrodes of a semiconductor element, and these are bonded to finger leads on a tape.
従来、この金属バンプは例えば次のようにして形成され
ている。第３図（Ａ＞に示すように、半導体基板１の表
面に配線領域２ａと絶縁領域２ｂと・を有する配線層２
を形成する。Conventionally, this metal bump has been formed, for example, in the following manner. As shown in FIG. 3 (A>), a wiring layer 2 having a wiring region 2a and an insulating region 2b on the surface of the semiconductor substrate 1.
form.
次に同図（Ｂ）に示すように、配線Ｒ２の表面にリンケ
イ酸化ガラス等からなる保護膜３を形成し、この保護膜
３に配線領域２ａに通じるコンタクトホール３ａを穿設
する０次いで保護膜３の表面および配線領域２ａの露出
表面にクロム等からなる付着金属Ｒ４を形成し、この付
着金属Ｊｆ！１４の表面に銅等からなるバリアメタル７
！１５を形成する。Next, as shown in FIG. 2B, a protective film 3 made of phosphorus silicate glass or the like is formed on the surface of the wiring R2, and a contact hole 3a communicating with the wiring area 2a is formed in this protective film 3. A deposited metal R4 made of chromium or the like is formed on the surface of the film 3 and the exposed surface of the wiring region 2a, and this deposited metal Jf! Barrier metal 7 made of copper etc. on the surface of 14
! form 15.
次に同図（Ｃ）に示すように、バリアメタル層５の表面
に感光性樹脂膜６を形成し、この感光性樹脂膜６に配線
領域２ａの上方に対応するコンタクトホール６ａをバリ
アメタル層５に通じるように穿設する。次いでこの感光
性樹脂膜６をマスクとしてコンタクトホール６ａを通じ
てバリアメタル層５に接続する金属バンプ７をメッキ法
等により形成する。Next, as shown in FIG. 2C, a photosensitive resin film 6 is formed on the surface of the barrier metal layer 5, and a contact hole 6a corresponding to the upper part of the wiring area 2a is formed in the photosensitive resin film 6 in the barrier metal layer. Make a hole so that it leads to 5. Next, using the photosensitive resin film 6 as a mask, metal bumps 7 connected to the barrier metal layer 5 through the contact holes 6a are formed by plating or the like.
しかる後、残余の感光性樹脂膜と金属バンプ７をマスク
として付着金属層４とバリアメタル層５の不要な部分を
エツチングにより除去して同図（Ｄ）に示す構造を得て
いる。Thereafter, using the remaining photosensitive resin film and metal bumps 7 as a mask, unnecessary portions of the adhered metal layer 4 and barrier metal layer 5 are removed by etching to obtain the structure shown in FIG. 4(D).
（発明が解決しようとする問題点）
しかしながらこのような従来の金属膜の形成方法では、
メッキマスク用の感光性樹脂膜が所望の金属膜、すなわ
ち金属バンプの厚さより薄いため、金属膜の成長過程に
おいて感光性樹脂膜を越えて金属膜が析出しはじめると
縦方向の成長と同時に横方向へも成長が進み、形成され
る金属膜の形状がいわゆる耳型となり、隣接する他の金
！ｉｃ膜と接触しショートしやすいという問題があった
。(Problems to be solved by the invention) However, in such a conventional method of forming a metal film,
Because the photosensitive resin film for the plating mask is thinner than the desired metal film, that is, the thickness of the metal bump, when the metal film begins to precipitate beyond the photosensitive resin film during the growth process of the metal film, it will grow horizontally at the same time as the vertical growth. Growth also progresses in this direction, and the shape of the metal film formed becomes what is called an ear shape, and other adjacent gold! There was a problem in that it easily came into contact with the IC film and caused a short circuit.
これは半導体素子の高密度化により電極の間隔が狭くな
ればなるほどその危険性は大となる。This risk becomes greater as the spacing between electrodes becomes narrower due to higher density semiconductor devices.
本発明はこのような問題を解決するためになされたもの
で、高密度化された半導体素子においても隣接する金属
膜どうしが接触することなく、良好なパターニングされ
た金属膜を形成する方法を提供することを目的とする。The present invention has been made to solve these problems, and provides a method for forming well-patterned metal films without causing adjacent metal films to come into contact with each other even in high-density semiconductor devices. The purpose is to
（発明の構成コ
（問題点を解決するための手段）
本発明のパターニングされた金ＲＭの形成方法は、基板
上または導電層を有する基板上に感光性樹脂を塗布し乾
燥して感光性樹脂膜を形成する工程と、前記感光性樹脂
膜を所望の金属膜のパターンに応じたマスクにより露光
しこの露光部分を溶解除去する工程と、前記感光性樹脂
膜の溶解除去された部分の基板上に金属膜を形成する工
程と、残余の前記感光性樹脂膜を除去する工程とから成
るパターニングされた金属膜の形成方法において、前記
感光性樹脂膜が、例えば前記感光性樹脂膜を形成する工
程を複数回繰返し行うことにより前記金属膜の所望の厚
さと同等またはそれ以上の厚さを有することを特徴とし
ている。(Structure of the Invention (Means for Solving Problems)) The method for forming a patterned gold RM of the present invention is to coat a photosensitive resin on a substrate or a substrate having a conductive layer and dry it. a step of forming a film; a step of exposing the photosensitive resin film to light using a mask according to a desired pattern of the metal film and dissolving and removing the exposed portion; and a step of dissolving and removing the portion of the photosensitive resin film on the substrate. In the method for forming a patterned metal film, which comprises the steps of forming a metal film on the substrate and removing the remaining photosensitive resin film, the photosensitive resin film may include, for example, the step of forming the photosensitive resin film. By repeating this process multiple times, the metal film has a thickness equal to or greater than the desired thickness of the metal film.
（作 用）
本発明のパターニングされた金！Ｘ膜の形成方法におい
て、例えば感光性樹脂膜の形成工程を複数回行うことに
よって、感光性樹脂膜の厚さを所望の金属膜の厚さと同
等またはそれ以上とすることにより、感光性樹脂膜に形
成したコンタクトポール内のみに金属膜を形成すること
ができる。これにより得られる金属膜の外面は実質的に
直線状となり、近接する金属膜どうしが接触する恐れが
なくなる。(Function) Patterned gold of the present invention! In the method for forming the X film, for example, by performing the photosensitive resin film formation step multiple times to make the thickness of the photosensitive resin film equal to or greater than the desired thickness of the metal film, the photosensitive resin film can be formed. A metal film can be formed only within the contact pole formed in the first place. The outer surface of the metal film thus obtained becomes substantially linear, eliminating the possibility that adjacent metal films will come into contact with each other.
（実施例） 以下本発明の実施例を図面を参照しながら説明する。(Example) Embodiments of the present invention will be described below with reference to the drawings.
まず本発明の方法によりＴＡＢ実装方式における金属バ
ンプを形成した場合の例を説明する。First, an example of forming metal bumps in the TAB mounting method using the method of the present invention will be described.
第１図（Ａ）に示すように、予め表面に図示を省略した
絶縁層が形成されている半導体基板８を使用して、この
半導体基板８の表面に厚さ約１μｍのアルミニウム層を
形成し、このアルミニウム層に選択的に陽極酸化を施し
てアルミニウムからなる配線領域９ａと酸化アルミニウ
ムからなる絶縁領域９ｂとで構成されている配線Ｍ９を
形成する。このとき配線領域９ａと絶縁領域９ｂとはほ
ぼ同等の厚さとする。As shown in FIG. 1A, using a semiconductor substrate 8 on which an insulating layer (not shown) has been formed in advance, an aluminum layer with a thickness of about 1 μm is formed on the surface of the semiconductor substrate 8. Then, this aluminum layer is selectively anodized to form a wiring M9 composed of a wiring region 9a made of aluminum and an insulating region 9b made of aluminum oxide. At this time, the wiring region 9a and the insulating region 9b have approximately the same thickness.
次に同図（Ｂ）に示すように、配線層９の表面にリンケ
イ酸化ガラス、二酸化ケイ素または窒化ケイ素等の保護
膜１０を例えばＣＶＤ法により厚さ約１μｍ程度に形成
し、この保護膜１０に配線層９の配線領域９ａに通じる
コンタクトホール１０ａをホトリソグラフィにより形成
する０次いで保護膜１０の表面および配線領域９ａの露
出表面にクロムまたはチタンからなる付着金ｇ層１１を
スパッタ法等により形成し、この付着金ＨＩ層１１の表
面に銅、パラジウムまたはニッケルーパラジウム合金か
らなるバリアメタルＭ１２をスパッタ法等により形成す
る。なお付着金属層１１およびバリアメタル！１２は、
アルミニウムからなる配線領域９ａと後述する金バンプ
１４との接着力強化のためのものであり、両層の合計の
厚さは約１μｍ程度である。Next, as shown in FIG. 9B, a protective film 10 made of phosphorus silicate glass, silicon dioxide, silicon nitride, etc. is formed on the surface of the wiring layer 9 to a thickness of about 1 μm by, for example, the CVD method. Next, a contact hole 10a communicating with the wiring region 9a of the wiring layer 9 is formed by photolithography. Next, a deposited gold layer 11 made of chromium or titanium is formed by sputtering or the like on the surface of the protective film 10 and the exposed surface of the wiring region 9a. Then, a barrier metal M12 made of copper, palladium, or nickel-palladium alloy is formed on the surface of the deposited gold HI layer 11 by sputtering or the like. Note that the attached metal layer 11 and the barrier metal! 12 is
This is to strengthen the adhesive force between the wiring region 9a made of aluminum and the gold bumps 14, which will be described later, and the total thickness of both layers is about 1 μm.
次に同図（Ｃ）に示すように、バリアメタル層１２の表
面に例えばネガタイプのホトレジスト、本実施例では０
Ｐ２−Ｒ８（東京応化型、商品名）をスピンナー法等に
より塗布し、８０〜１２０℃の温度範囲で１０〜３０分
乾燥後、再度ホトレジストを塗布する。ネガタイプのホ
トレジストは１回で５〜３０μｍ程度の厚さに塗布が可
能であり、この工程を２〜４回程度繰返すことによって
、所望の金属バンプの厚さと同等またはそれ以上の厚さ
の感光性樹脂膜１３が得られる。なお本実施例では金属
バンプの厚さを２０〜３０μｍとして設定したが、所望
の金バンプ１４の厚さに応じて感光性樹脂膜１３を２０
〜５０μｍの厚さに設定することが好ましい０次いでこ
の感光性樹脂［１３の配線領域９ａの上方に対応する領
域、すなわち所望の金バンプ１４のパターンに応じたネ
ガパターンのマスクを用いて感光性樹脂膜１３を露光す
る。そしてこの露光部分を溶解除去してコンタクトホー
ル１３ａを形成する。さらにこのコンタクトホール１３
ａを通じてバリアメタル層１２に接続するように例えば
金メッキを用いて金バンブ１４を感光性樹脂膜１３の厚
さ以下になるようにメッキ条件を設定して形成する。Next, as shown in FIG.
P2-R8 (Tokyo Ohka Type, trade name) is applied by a spinner method or the like, and after drying in a temperature range of 80 to 120°C for 10 to 30 minutes, a photoresist is applied again. Negative type photoresist can be coated to a thickness of about 5 to 30 μm in one go, and by repeating this process about 2 to 4 times, a photoresist with a thickness equal to or greater than the desired metal bump thickness can be obtained. A resin film 13 is obtained. In this example, the thickness of the metal bump was set to 20 to 30 μm, but the thickness of the photosensitive resin film 13 may be set to 20 to 30 μm depending on the desired thickness of the gold bump 14.
It is preferable to set the thickness to ~50 μm. Next, the area corresponding to the upper wiring area 9a of this photosensitive resin [13, that is, the area corresponding to the area above the wiring area 9a of the gold bump 14, is photosensitive using a negative pattern mask corresponding to the desired pattern of the gold bumps 14. The resin film 13 is exposed. Then, this exposed portion is dissolved and removed to form a contact hole 13a. Furthermore, this contact hole 13
Gold bumps 14 are formed using, for example, gold plating so as to be connected to the barrier metal layer 12 through a, with plating conditions set so that the thickness is equal to or less than the thickness of the photosensitive resin film 13.
しかる後、残余の感光性樹脂膜１３と金バンプ１４をマ
スクとして付着金属層１１とバリアメタル層１２の不要
な部分をエツチングにより同時に除去して同図（Ｄ＞に
示すような構造を得る。Thereafter, using the remaining photosensitive resin film 13 and gold bumps 14 as masks, unnecessary portions of the attached metal layer 11 and barrier metal layer 12 are simultaneously removed by etching to obtain a structure as shown in FIG.
このようにして得られた半導体基板上の金属バンプは隣
接する他の金属バンプと接触することのない良好なもの
であり、またこれを用いてＴＡＢ実装方式により評価し
たところ良好な結果が得られた。The metal bumps thus obtained on the semiconductor substrate are of good quality and do not come into contact with other adjacent metal bumps, and good results were obtained when evaluated using the TAB mounting method. Ta.
すなわち本実施例によれば、上記した第１図（Ｃ）の工
程で感光性樹脂の塗布と乾燥とを複数回経返すことによ
って、感光性樹脂膜の厚さを所望の金属膜の厚さと同等
またはそれ以上とすることができ、この感光性樹脂膜を
メッキ用マスクとして金Ｘ膜を形成するので金属膜の成
長を縦方向のみに制御することができ、従来方法のよう
に横方向へ成長することがなくなり、隣接する他の金属
膜と接触することなく安定した金属膜が得られる。That is, according to this embodiment, the thickness of the photosensitive resin film can be adjusted to the desired thickness of the metal film by repeating the application and drying of the photosensitive resin multiple times in the process shown in FIG. 1(C) described above. Since the photosensitive resin film is used as a plating mask to form the gold There is no growth, and a stable metal film can be obtained without contacting other adjacent metal films.
また、上記したように金ｙｔＸ膜の成長を縦方向のみに
制御することができるので、析出する金属膜の面積はた
えず一定であり、従来方法のように面積変化による通電
電流の補正が不要となり、この点においても安定して金
属膜が得られる。Furthermore, as mentioned above, since the growth of the gold yt In this respect as well, a metal film can be stably obtained.
次に本発明の方法を転写バンプ実装技術に応用した例を
示す。Next, an example in which the method of the present invention is applied to transfer bump mounting technology will be shown.
第２図（Ａ）に示すように、半導体基板やガラス基板等
の基板１５上にメッキ法により金ＰＡ膜を形成する際に
共通電極となる導電層１６として、例えばＣｒ−１７０
層１６ａ、１６ｂをスパッタ法等によりそれぞれ約１０
００人波着させる。As shown in FIG. 2(A), when a gold PA film is formed on a substrate 15 such as a semiconductor substrate or a glass substrate by a plating method, a conductive layer 16 that becomes a common electrode is made of, for example, Cr-170.
The layers 16a and 16b are formed by sputtering or the like to form approximately 10
00 people arrive.
次に同図（Ｂ）に示すように、導電層１６上に感光性樹
脂をスピンナー法等により塗布した後、８０〜１２０℃
の範囲で乾燥する。これを複数回繰返すことにより所望
とする金属膜１８と同等またはそれ以上の厚さとなるよ
うに感光性樹脂Ｍ１７を形成する０次いでこの感光性樹
脂膜１７を所望の金属膜１８のパターンに応じたネガパ
ターンのマスクを用いて露光し、この露光部分を溶解除
去してコンタクトホール１７ａを形成する。そしてこの
感光性樹脂膜１７をマスクとしてメッキ法により金！ｉ
ｃ膜１８を形成する。この金属膜１８の材料としては例
えば金が用いられる。Next, as shown in the same figure (B), after coating a photosensitive resin on the conductive layer 16 by a spinner method or the like,
Dry within the range. By repeating this several times, the photosensitive resin M17 is formed to have a thickness equal to or greater than that of the desired metal film 18.Next, this photosensitive resin film 17 is shaped into the pattern of the desired metal film 18. Exposure is performed using a negative pattern mask, and the exposed portion is dissolved and removed to form a contact hole 17a. Then, using this photosensitive resin film 17 as a mask, gold is formed by plating. i
c film 18 is formed. For example, gold is used as the material for this metal film 18.
しかる後、残余の感光性樹脂Ｍ１７を除去することによ
り、同図（Ｃ）に示すような構造を得る。Thereafter, the remaining photosensitive resin M17 is removed to obtain a structure as shown in FIG. 3(C).
この場合にも、前述した実施例と同様な効果が得られる
。さらにこの様にして得た金属膜をフィルムリード（ポ
リイミド樹脂テープ上にバターニングされているリード
）転写し、次いでフィルムリード上に転写された金属膜
と半導体素子上の電極とを加熱、加圧して接合したとこ
ろ良好な結果が得られた。In this case as well, the same effects as in the embodiment described above can be obtained. Furthermore, the metal film obtained in this way is transferred to a film lead (a lead patterned on a polyimide resin tape), and then the metal film transferred onto the film lead and the electrode on the semiconductor element are heated and pressurized. Good results were obtained when welded them together.
［発明の効果コ
以上説明したように本発明のパターニングされた金属膜
の形成方法によれば、金属膜形成時のマスクとなる感光
性樹脂膜を所望とする金属膜の厚さと同等もしくはそれ
以上としているので、隣接する金ＩＬ膜どうしが接触す
ることなく、良好な金属膜が得られる。[Effects of the Invention] As explained above, according to the method for forming a patterned metal film of the present invention, the thickness of the photosensitive resin film serving as a mask during metal film formation is equal to or greater than the desired thickness of the metal film. Therefore, a good metal film can be obtained without adjacent gold IL films coming into contact with each other.
第１図は本発明の一実施例の工程を示す図、第２図は他
の実施例の工程を示す図、第３図は従来の金属バンプの
形成方法を示す図である。
８・・・・・・・・・半導体基板
９・・・・・・・・・配線層
１０・・・・・・・・・保護膜層
１０ａ、１３ａ・・・・・・コンタクトホール１１・・
・・・・・・・付着金属層
１２・・・・・・・・・バリアメタル層１３・・・・・
・・・・感光性樹脂膜
１４・・・・・・・・・金バンプ
（Ａ）
（Ａ）
第２図FIG. 1 is a diagram showing the steps of one embodiment of the present invention, FIG. 2 is a diagram showing the steps of another embodiment, and FIG. 3 is a diagram showing the conventional method of forming metal bumps. 8...Semiconductor substrate 9...Wiring layer 10...Protective film layer 10a, 13a...Contact hole 11.・
...Adhesive metal layer 12 ...Barrier metal layer 13 ...
...Photosensitive resin film 14... Gold bump (A) (A) Fig. 2
Claims (5)
膜を形成する工程と、前記感光性樹脂膜を所望の金属膜
のパターンに応じたマスクにより露光しこの露光部分を
溶解除去する工程と、前記感光性樹脂膜の溶解除去され
た部分の基板上に金属膜を形成する工程と、残余の前記
感光性樹脂膜を除去する工程とから成るパターニングさ
れた金属膜の形成方法において、前記感光性樹脂膜が前
記金属膜の所望の厚さと同等またはそれ以上の厚さを有
することを特徴とするパターニングされた金属膜の形成
方法。(1) A step of forming a photosensitive resin film on a substrate-like substrate or a substrate having a conductive layer, and a step of exposing the photosensitive resin film to light using a mask according to a desired metal film pattern and dissolving and removing the exposed portion. A method for forming a patterned metal film comprising the steps of: forming a metal film on the substrate in the portion where the photosensitive resin film has been dissolved and removed; and removing the remaining photosensitive resin film. A method for forming a patterned metal film, characterized in that the photosensitive resin film has a thickness equal to or greater than the desired thickness of the metal film.
数回繰返し行うことにより金属膜の所望の厚さと同等ま
たはそれ以上の厚さを有する特許請求の範囲第１項記載
のパターニングされた金属膜の形成方法。(2) The patterned resin film according to claim 1, wherein the photosensitive resin film has a thickness equal to or greater than the desired thickness of the metal film by repeating the process of forming the photosensitive resin film multiple times. A method for forming a metal film.
る特許請求の範囲第１項または第２項記載のパターニン
グされた金属膜の形成方法。(3) The method for forming a patterned metal film according to claim 1 or 2, wherein the photosensitive resin film has a thickness in the range of 20 to 50 μm.
第１項または第３項記載のパターニングされた金属膜の
形成方法。(4) The method for forming a patterned metal film according to claim 1 or 3, wherein the photosensitive resin film is of a negative type.
請求の範囲第１項ないし第４項のいずれか１項記載のパ
ターニングされた金属膜の形成方法。(5) The method for forming a patterned metal film according to any one of claims 1 to 4, wherein the patterned metal film is a gold bump.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26536786A JPS63119551A (en) | 1986-11-07 | 1986-11-07 | Forming method of patterned metal film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26536786A JPS63119551A (en) | 1986-11-07 | 1986-11-07 | Forming method of patterned metal film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63119551A true JPS63119551A (en) | 1988-05-24 |
Family
ID=17416194
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26536786A Pending JPS63119551A (en) | 1986-11-07 | 1986-11-07 | Forming method of patterned metal film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63119551A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6417449A (en) * | 1987-07-10 | 1989-01-20 | Fuji Electric Co Ltd | Formation of bump electrode of semiconductor device |
| US5565379A (en) * | 1993-01-29 | 1996-10-15 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing a semiconductor device having a bump electrode by a proximity exposure method |
-
1986
- 1986-11-07 JP JP26536786A patent/JPS63119551A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6417449A (en) * | 1987-07-10 | 1989-01-20 | Fuji Electric Co Ltd | Formation of bump electrode of semiconductor device |
| US5565379A (en) * | 1993-01-29 | 1996-10-15 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing a semiconductor device having a bump electrode by a proximity exposure method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5226232A (en) | Method for forming a conductive pattern on an integrated circuit | |
| KR100264479B1 (en) | Structure of bump electrode and method of forming the same | |
| JP3362545B2 (en) | Method for manufacturing semiconductor device | |
| EP0411165B1 (en) | Method of forming of an integrated circuit chip packaging structure | |
| EP0145862B1 (en) | Metallization of a ceramic substrate | |
| JPH029198A (en) | Method of bonding metal layer to board | |
| JPH0513418A (en) | Semiconductor device and manufacture thereof | |
| US20070166978A1 (en) | Microelectronic interconnect device comprising localised conductive pins | |
| JPH0642503B2 (en) | High density integrated circuit support and manufacturing method thereof | |
| JPH02251145A (en) | Formation of bump electrode | |
| JPS63119551A (en) | Forming method of patterned metal film | |
| JP2811741B2 (en) | Method for manufacturing semiconductor device | |
| JP3664707B2 (en) | Semiconductor device and manufacturing method thereof | |
| JP3573894B2 (en) | Semiconductor device and manufacturing method thereof | |
| JP2000299339A (en) | Semiconductor device and manufacture thereof | |
| JPH07201922A (en) | Method for forming solder bump on board | |
| JP3087819B2 (en) | Terminal electrode formation method for solder bump mounting | |
| JP3877691B2 (en) | Semiconductor device | |
| JPH03101233A (en) | Electrode structure and its manufacture | |
| JPH09232321A (en) | Bump electrode and manufacture thereof | |
| JPH04278542A (en) | Semiconductor device and manufacture thereof | |
| JPH01238044A (en) | Semiconductor device | |
| JP3351878B2 (en) | Semiconductor device and method of manufacturing the same | |
| JPS63166249A (en) | Metal protrusion and manufacture thereof | |
| GB2244176A (en) | Method and apparatus for forming a conductive pattern on an integrated circuit |