JPS63114178A - Manufacture of infrared detecting element - Google Patents
Manufacture of infrared detecting elementInfo
- Publication number
- JPS63114178A JPS63114178A JP61260207A JP26020786A JPS63114178A JP S63114178 A JPS63114178 A JP S63114178A JP 61260207 A JP61260207 A JP 61260207A JP 26020786 A JP26020786 A JP 26020786A JP S63114178 A JPS63114178 A JP S63114178A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- substrate
- electrode
- film
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000004065 semiconductor Substances 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims 1
- 238000005498 polishing Methods 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 abstract description 9
- 229910052594 sapphire Inorganic materials 0.000 abstract description 4
- 239000010980 sapphire Substances 0.000 abstract description 4
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 abstract description 2
- 230000015556 catabolic process Effects 0.000 abstract description 2
- 239000013078 crystal Substances 0.000 abstract description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 abstract 6
- RPPBZEBXAAZZJH-UHFFFAOYSA-N cadmium telluride Chemical compound [Te]=[Cd] RPPBZEBXAAZZJH-UHFFFAOYSA-N 0.000 description 10
- 229910052714 tellurium Inorganic materials 0.000 description 6
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 5
- 239000005083 Zinc sulfide Substances 0.000 description 4
- 229910052793 cadmium Inorganic materials 0.000 description 4
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 4
- 229910052984 zinc sulfide Inorganic materials 0.000 description 4
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 3
- 229910052753 mercury Inorganic materials 0.000 description 3
- 239000010407 anodic oxide Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔概要〕
本発明は、検知素子感度を上げるために絶縁膜を介して
成長層（水銀・カドミ・テルル）より成る動作半導体層
上に電極を設けたオーバラップ電極構造を有する赤外線
検知素子において、オーバラップ部の電極と動作半導体
層との絶縁性をよくして素子の検知感度を向上させるた
め、成長用基板（カドミ・テルル基板）上にエピタキシ
ャル成長させた水銀・カドミ・テルルの動作半導体層を
形成し、前記成長用基板を前記動作半導体層と電極との
間の絶縁膜に用いることにより両者間の耐圧を向上させ
たものである。[Detailed Description of the Invention] [Summary] The present invention provides an overlapping electrode structure in which an electrode is provided on an active semiconductor layer made of a grown layer (mercury, cadmium, tellurium) via an insulating film in order to increase the sensitivity of a sensing element. In an infrared sensing element with - By forming an active semiconductor layer of tellurium and using the growth substrate as an insulating film between the active semiconductor layer and the electrode, the breakdown voltage between the two is improved.
本発明は光導電型の赤外線検知素子に係り、特に電気的
に耐圧性の強いオーバラップ電極構造を有する赤外線検
知素子の製造方法に関するものである。The present invention relates to a photoconductive type infrared sensing element, and more particularly to a method for manufacturing an infrared sensing element having an electrically high pressure-resistant overlapping electrode structure.
オーバラップ電極構造の赤外線検知素子は、検知感度を
上げ名点から有用である。An infrared sensing element with an overlapping electrode structure is useful because it increases detection sensitivity.
かかる赤外線ヰ★知素子においては、動作半導体層と電
極間に設けられた絶縁膜の耐圧を良くする必要があり、
それがための方策が求められている。In such an infrared sensing element, it is necessary to improve the withstand voltage of the insulating film provided between the active semiconductor layer and the electrode.
Measures are needed to achieve this.
第２図は従来の赤外線検知素子の斜視図を示している。 FIG. 2 shows a perspective view of a conventional infrared sensing element.
第２図に示すように、従来の赤外線検知素子（ｎ型の場
合）は、サファイヤ板１の上面に水銀・カドミ・テルル
（以後ＨｇＣｄＴｅと記す）から成る動作半導体層２が
形成され、該動作半導体層２の両端部の上面に中電極３
と一電極４が所定の間隔を持って配設され、この区画さ
れる部分が受光部５を形成している。As shown in FIG. 2, in the conventional infrared sensing element (in the case of n-type), an active semiconductor layer 2 made of mercury, cadmium, and tellurium (hereinafter referred to as HgCdTe) is formed on the top surface of a sapphire plate 1. A middle electrode 3 is placed on the upper surface of both ends of the semiconductor layer 2.
and one electrode 4 are arranged at a predetermined interval, and this partitioned portion forms a light receiving section 5.
また、−電極４の受光部５方向の一端部分は、陽極酸化
膜や硫化亜鉛（ＺｎＳ）から成る薄い絶縁膜６を介して
動作半導体層２と対向したオーバラップ電極構造をなし
ている。Further, one end portion of the negative electrode 4 facing the light receiving portion 5 has an overlapping electrode structure in which it faces the active semiconductor layer 2 via a thin insulating film 6 made of an anodic oxide film or zinc sulfide (ZnS).
この−電極４のオーバラップ電極構造は、外部よりの赤
外線が受光部５を通って動作半導体層２に入射して受光
部５で生じた小数キャリアであるホールが一電極４で再
結合するまでの時間を一電極４と受光部５との距離を大
きくすることにより長くしており、これによって、赤外
線検知素子の感度を向上させている。This overlapping electrode structure of the -electrode 4 is such that infrared rays from the outside pass through the light receiving section 5 and enter the active semiconductor layer 2, and holes, which are minority carriers, generated in the light receiving section 5 are recombined at one electrode 4. The time period is increased by increasing the distance between one electrode 4 and the light receiving section 5, thereby improving the sensitivity of the infrared detection element.
上記、従来のオーバラップ電極構造の検知素子において
は、絶縁膜６に陽極酸化膜や蒸着によるＺｎＳを用いて
いるため、ピンホールの発生による電気的な耐圧性が弱
く、−電極４と検知素子２が対向するオーバラップ部分
でリーク電流が流れる。In the above-described sensing element with the conventional overlap electrode structure, since the insulating film 6 is made of an anodic oxide film or ZnS by vapor deposition, the electrical voltage resistance is weak due to the generation of pinholes, and the -electrode 4 and the sensing element are A leakage current flows in the overlapped portion where the two face each other.
これによって、−電極４と受光部５との電気的な距離が
短くなり、素子感度を低下せしめる。As a result, the electrical distance between the negative electrode 4 and the light receiving section 5 is shortened, and the element sensitivity is reduced.
本発明はこのような点に鑑みて創作されたもので、耐圧
の良い絶縁膜を形成し、素子感度を安定に向上すること
ができる赤外線検知素子の製造方法を提供することを目
的としている。The present invention was created in view of the above points, and an object of the present invention is to provide a method for manufacturing an infrared sensing element that can form an insulating film with good withstand voltage and stably improve the element sensitivity.
上記の問題点を解消するため、動作半導体層として成長
用基板（カドミ・テルル基板）上にエビクキシャル成長
させた成長層（水銀・カドミ・テルル）を用い、該成長
用基板の一部を用いてオーバラップ電極構造の一電極と
動作半導体層との間に設けられる絶縁膜とした構成とし
ている。In order to solve the above problems, we used a growth layer (mercury/cadmium/tellurium) that was evixtally grown on a growth substrate (cadmium/tellurium substrate) as the active semiconductor layer, and used a part of the growth substrate. The structure is such that an insulating film is provided between one electrode of the overlapping electrode structure and the active semiconductor layer.
（作用〕
絶縁膜にカドミ・テルル基板の一部を用いることにより
、絶縁膜が高耐圧となる。これにより、−電極と動作半
導体層が対向するオーバラップ部分でのリーク電流がな
くなり、−電極と受光部との電気的な距離が長くなづて
素子感度が向上する。(Function) By using a part of the cadmium-tellurium substrate as the insulating film, the insulating film has a high withstand voltage.This eliminates leakage current in the overlapped area where the - electrode and the active semiconductor layer face each other, and the - electrode The electrical distance between the photodetector and the photodetector increases, and the element sensitivity improves.
第１図（ａｌ〜（ｌｉｔ）は本発明の一実施例の赤外線
検知素子の製造工程図（ｎ型の場合）を示しており、同
図を参照して製造方法を順次説明する。FIG. 1 (al to (lit)) shows a manufacturing process diagram (in the case of n-type) of an infrared sensing element according to an embodiment of the present invention, and the manufacturing method will be sequentially explained with reference to the drawings.
まず、第１図（ａｌに示すように、成長用基板としてカ
ドミ・テルル（以後ＣｄＴｅと記す）基板７の上にＨｇ
ＣｄＴｅを成長させたエピタキシャル結晶を作成して動
作半導体層２を形成する。First, as shown in FIG. 1 (al), Hg
An active semiconductor layer 2 is formed by creating an epitaxial crystal grown from CdTe.
次に、第１図（ｂｌに示すように、第１図（ａｌの工程
で形成された動作半導体層２の表面を下にしてサファイ
ヤ板１に貼り付ける。Next, as shown in FIG. 1 (bl), the active semiconductor layer 2 formed in the step of FIG. 1 (al) is attached to the sapphire plate 1 with its surface facing down.
次に、ＣｄＴｅ基板７を研麿および／またはエツチング
して第１図（Ｃ１に示すように、２〜３μｍの厚さのＣ
ｄＴｅ膜８を形成する。次に、第１図（ｄ＞に示すよう
に、中電極３と一電極４のそれぞれが動作半導体層２と
当接するコンタクト部９−１および９−２のＣｄＴｅ膜
８を除去する。Next, the CdTe substrate 7 is polished and/or etched to form a CdTe substrate with a thickness of 2 to 3 μm, as shown in FIG. 1 (C1).
A dTe film 8 is formed. Next, as shown in FIG. 1(d), the CdTe film 8 of the contact portions 9-1 and 9-2 where the middle electrode 3 and one electrode 4 are in contact with the active semiconductor layer 2 is removed.
次に、第１図（ｅ）に示すように、コンタクト部９−１
に中電極３を蒸着する。Next, as shown in FIG. 1(e), the contact portion 9-1
A middle electrode 3 is deposited on the surface.
また、−電極４は、その一端が中電極３と所定の間隔を
持って受光部５を形成するとともに、受光部５に近い一
端部分はＣｄＴｅ膜８を介して動作半導体２と対向し、
他の一端をコンタクト部９−２に蒸着する。Furthermore, one end of the - electrode 4 forms a light-receiving section 5 with a predetermined distance from the middle electrode 3, and one end portion close to the light-receiving section 5 faces the active semiconductor 2 with a CdTe film 8 interposed therebetween.
The other end is deposited on the contact portion 9-2.
上記の製造方法によって、−電極４と動作半導体層２と
の当接個所の絶縁膜をＣｄＴｅ膜８としている。By the above manufacturing method, the CdTe film 8 is used as the insulating film at the contact point between the negative electrode 4 and the active semiconductor layer 2.
なお、上記実施例は、ｎ型赤外線検知素子について述べ
たが、ｐ帯赤外線検知素子についても上記の製造方法を
応用することにより、容易に製造することができる。Although the above embodiments have been described with respect to n-type infrared sensing elements, p-band infrared sensing elements can also be easily manufactured by applying the above manufacturing method.
また、上記実施例では基板にカドミ・テルル（ＣｄＴｅ
）基板を用いた構成で説明したが、カドミ・亜鉛・テル
ル（ＣｄＺｎＴｅ）基板を用いても同様の効果が得られ
る。Further, in the above embodiment, the substrate is made of cadmium tellurium (CdTe).
) substrate, the same effect can be obtained by using a cadmium-zinc-tellurium (CdZnTe) substrate.
以上説明したように本発明は、絶縁膜に成長用基板を用
いたので、オーバラップ電極構造の赤外線検知素子の感
度を安定して向上することが可能となる。As explained above, in the present invention, since a growth substrate is used as an insulating film, it is possible to stably improve the sensitivity of an infrared sensing element having an overlapping electrode structure.
第１図（ａｌ〜（ｅｌは本発明の一実施例の赤外線検知
素子の製造工程図、
第２図は従来の赤外線検知素子の斜視図である。
図において、１はサファイヤ板、２は動作半導体層（Ｈ
ｇＣｄＴｅ） 、３は十電極、４は一電極、５は 、受
光部、６は絶縁膜（ＺｎＳ）、７は成長用基板（ＣｄＴ
ｅ基板）、８はＣｄＴｅ膜、９−１ 、９−２はコンタ
クト部を示している。
第１図
０ら薙（和Ｓ）
第２図Figure 1 (al to (el) is a manufacturing process diagram of an infrared sensing element according to an embodiment of the present invention, and Figure 2 is a perspective view of a conventional infrared sensing element. In the figure, 1 is a sapphire plate, 2 is an operation Semiconductor layer (H
gCdTe), 3 is ten electrodes, 4 is one electrode, 5 is a light receiving part, 6 is an insulating film (ZnS), 7 is a growth substrate (CdT
(e substrate), 8 is a CdTe film, and 9-1 and 9-2 are contact portions. Fig. 1 0 Ra Nagi (Japanese S) Fig. 2
Claims (1)
電極（３，４）を配設し、該電極間隔によって受光部（
５）を画定するとともに、前記一方の電極の受光部側の
一端部分を絶縁膜（６）を介して前記動作半導体層（２
）と対向するオーバラップ型電極とした赤外線検知素子
の製造に際し、成長用基板（７）上にエピタキシャル成
長させた成長層で動作半導体層（２）を形成した後、前
記成長用基板（７）を研磨および／または蝕刻して所定
の厚さを持った膜（８）を形成し、該膜（８）の両端部
を所定量削除し、残された膜（８）を用いて前記絶縁膜
（６）としたことを特徴とする赤外線検知素子の製造方
法。Two electrodes (3, 4) are arranged on the surface of the active semiconductor layer (2) with a predetermined interval, and the light receiving part (
5), and one end portion of the one electrode on the light receiving section side is connected to the active semiconductor layer (2) via an insulating film (6).
) When manufacturing an infrared sensing element with overlapping electrodes facing the growth substrate (7), after forming the active semiconductor layer (2) with a growth layer epitaxially grown on the growth substrate (7), the growth substrate (7) is A film (8) having a predetermined thickness is formed by polishing and/or etching, and both ends of the film (8) are removed by a predetermined amount, and the remaining film (8) is used to form the insulating film (8). 6) A method for manufacturing an infrared sensing element, characterized by the following.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61260207A JPS63114178A (en) | 1986-10-30 | 1986-10-30 | Manufacture of infrared detecting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61260207A JPS63114178A (en) | 1986-10-30 | 1986-10-30 | Manufacture of infrared detecting element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63114178A true JPS63114178A (en) | 1988-05-19 |
Family
ID=17344828
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61260207A Pending JPS63114178A (en) | 1986-10-30 | 1986-10-30 | Manufacture of infrared detecting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63114178A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5004698A (en) * | 1985-12-05 | 1991-04-02 | Santa Barbara Research Center | Method of making photodetector with P layer covered by N layer |
-
1986
- 1986-10-30 JP JP61260207A patent/JPS63114178A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5004698A (en) * | 1985-12-05 | 1991-04-02 | Santa Barbara Research Center | Method of making photodetector with P layer covered by N layer |
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