JPS63112337U - - Google Patents

Info

Publication number
JPS63112337U
JPS63112337U JP316487U JP316487U JPS63112337U JP S63112337 U JPS63112337 U JP S63112337U JP 316487 U JP316487 U JP 316487U JP 316487 U JP316487 U JP 316487U JP S63112337 U JPS63112337 U JP S63112337U
Authority
JP
Japan
Prior art keywords
layer
etching rate
insulating
thickness
upper layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP316487U
Other languages
English (en)
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP316487U priority Critical patent/JPS63112337U/ja
Publication of JPS63112337U publication Critical patent/JPS63112337U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
JP316487U 1987-01-12 1987-01-12 Pending JPS63112337U (no)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP316487U JPS63112337U (no) 1987-01-12 1987-01-12

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP316487U JPS63112337U (no) 1987-01-12 1987-01-12

Publications (1)

Publication Number Publication Date
JPS63112337U true JPS63112337U (no) 1988-07-19

Family

ID=30782670

Family Applications (1)

Application Number Title Priority Date Filing Date
JP316487U Pending JPS63112337U (no) 1987-01-12 1987-01-12

Country Status (1)

Country Link
JP (1) JPS63112337U (no)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09251996A (ja) * 1995-06-20 1997-09-22 Semiconductor Energy Lab Co Ltd 半導体装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09251996A (ja) * 1995-06-20 1997-09-22 Semiconductor Energy Lab Co Ltd 半導体装置の製造方法

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