JPS63111652A - Wafer bonding - Google Patents
Wafer bondingInfo
- Publication number
- JPS63111652A JPS63111652A JP25705486A JP25705486A JPS63111652A JP S63111652 A JPS63111652 A JP S63111652A JP 25705486 A JP25705486 A JP 25705486A JP 25705486 A JP25705486 A JP 25705486A JP S63111652 A JPS63111652 A JP S63111652A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- film
- silicon
- bonding
- sio2 film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 235000012431 wafers Nutrition 0.000 claims abstract description 63
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 52
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 25
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 21
- 238000010438 heat treatment Methods 0.000 claims abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 21
- 229910052710 silicon Inorganic materials 0.000 abstract description 21
- 239000010703 silicon Substances 0.000 abstract description 21
- 229910052681 coesite Inorganic materials 0.000 abstract description 14
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 14
- 229910052682 stishovite Inorganic materials 0.000 abstract description 14
- 229910052905 tridymite Inorganic materials 0.000 abstract description 14
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 abstract description 4
- 230000003647 oxidation Effects 0.000 abstract description 4
- 238000007254 oxidation reaction Methods 0.000 abstract description 4
- 235000011149 sulphuric acid Nutrition 0.000 abstract description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 4
- 239000007767 bonding agent Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000006482 condensation reaction Methods 0.000 description 2
- 230000018044 dehydration Effects 0.000 description 2
- 238000006297 dehydration reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- 239000002023 wood Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910008051 Si-OH Inorganic materials 0.000 description 1
- 229910006358 Si—OH Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 1
- 125000005372 silanol group Chemical group 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
Landscapes
- Ceramic Products (AREA)
- Local Oxidation Of Silicon (AREA)
Abstract
Description
【発明の詳細な説明】
〔概要〕
本発明は、ウェハ接着方法に於いて、一方のウェハに於
ける二酸化シリコン膜表面には親水性処理を施し、他方
のウェハに於ける二酸化シリコン膜表面は親水性処理を
行うことなく、それ等を重ね合わせて熱処理を行って接
着することに依り、接着剤を要しないことは勿論、接着
された界面に空隙などが存在しない均一な接着を可能と
したものである。[Detailed Description of the Invention] [Summary] In the wafer bonding method of the present invention, the surface of the silicon dioxide film on one wafer is subjected to hydrophilic treatment, and the surface of the silicon dioxide film on the other wafer is By stacking them and heat-treating them without hydrophilic treatment, we not only do not need adhesive, but also achieve uniform adhesion with no voids at the bonded interface. It is something.
本発明は、ウェハ、例えば半導体ウェハを接着剤なしで
他の半導体ウェハや基板に貼付したい場合に用いて好適
なウェハ接着方法に関する。The present invention relates to a wafer bonding method suitable for use when it is desired to bond a wafer, such as a semiconductor wafer, to another semiconductor wafer or a substrate without using an adhesive.
現在、半導体ウェハを同様な半導体ウェハ或いは他の基
板に貼付する技術は、半導体装置を高集積化及び高性能
化する上で甚だ重要なものとなりつつある。At present, the technique of bonding a semiconductor wafer to a similar semiconductor wafer or another substrate is becoming extremely important in increasing the integration and performance of semiconductor devices.
第６図及び第７図はウェハ接着方法の従来例を説明する
為の工程要所に於けるウェハの要部切断側面図をそれぞ
れ表し、以下、これ等の図を参照しつつ解説する。6 and 7 are cutaway side views of essential parts of a wafer at key points in the process for explaining a conventional wafer bonding method, and the explanation will be given below with reference to these figures.
第６図参照
（１） 化学気相堆積（ｃｈｅｍｉｃａｌ ｖａｐ
。See Figure 6 (1) Chemical vapor deposition
.
ｒ ｄｅｐｏｓｉｔｉｏｎ：ＣＶＤ）法を適用するこ
とに依り、シリコン・ウェハ１の表面に二酸化シリコン
（ＳｔＯｚ）膜２を形成し、また、シリコン・ウェハ３
の表面には５ｉ０２膜４を形成する。尚、Ｓ ｉ Ｏ２
膜２或いは４を形成するには、前記ＣＶＤ法の外、熱酸
化法、シリカ液をスピン・コート法で塗布して乾燥させ
る方法などを適用しても良く、何れにせよ、それ等の表
面は鏡面になっている必要がある。By applying a deposition (CVD) method, a silicon dioxide (StOz) film 2 is formed on the surface of a silicon wafer 1, and a silicon wafer 3 is
A 5i02 film 4 is formed on the surface. Furthermore, S i O2
In order to form the film 2 or 4, in addition to the above-mentioned CVD method, a thermal oxidation method, a method of applying a silica liquid by spin coating and drying, etc. may be applied, and in any case, the surface must have a mirror surface.
（２）Ｓｉ０２膜２或いは４が形成されたシリコン・ウ
ェハ１及び３をＨ２ＳＯ４＋Ｈ２Ｏ２（２＝１）液中に
浸漬して５ｔ０２膜２及び４の表面を親木処理する。(2) The silicon wafers 1 and 3 on which the Si02 films 2 or 4 have been formed are immersed in a H2SO4+H2O2 (2=1) solution to perform parent wood treatment on the surfaces of the 5t02 films 2 and 4.
これに依り、５ｉ０２膜２及び４の表面には水分が吸着
され、図では、その水分層を記号５及び６で指示しであ
る。As a result, moisture is adsorbed on the surfaces of the 5i02 films 2 and 4, and the moisture layers are indicated by symbols 5 and 6 in the figure.
第７図参照
（３）シリコン・ウェハ１及び３のＳ ｉ ０２膜２及
び４側を対向して重ね合わせてから、温度１０００（’
Ｃ）、時間３０〔分〕の熱処理を行って両者を接着する
。尚、記号７は、５ｉ０２膜２及び４の表面に吸着され
ていた水分が気化して生成された剥離部分を指示してい
る。Refer to FIG. 7. (3) The Si 02 films 2 and 4 sides of the silicon wafers 1 and 3 are stacked facing each other, and then heated to a temperature of 1000 ('
C), heat treatment is performed for 30 minutes to bond the two. Note that the symbol 7 indicates a peeled portion formed by vaporization of moisture adsorbed on the surfaces of the 5i02 films 2 and 4.
このようにしてシリコン・ウェハ１及び３が接着される
のは、Ｓ ｉ Ｏ２膜２及び４の表面が親木処理された
ことから、そこにシラノール（Ｓｉ−ＯＨ）基が存在し
、それが熱処理に依って脱水縮合反応することでシロキ
サン結合するからである。The reason why the silicon wafers 1 and 3 are bonded together in this way is that the surfaces of the SiO2 films 2 and 4 have been subjected to parent wood treatment, and silanol (Si-OH) groups exist there. This is because siloxane bonds are formed by a dehydration condensation reaction caused by heat treatment.
その場合の反応を式で表すと、
（Ｓ ｉ −０Ｈ） ＋ （Ｓ ｉ −０Ｈ）→Ｈｚ
Ｏ＋（Ｓ ｉ −０−３ｉ）
となる。The reaction in that case is represented by the formula: (S i -0H) + (S i -0H) → Hz
O+(S i -0-3i).
前記のようなシロキサン結合を利用すると、シリコン・
ウェハ以外のもの、例えばＧａＡｓウェハは勿論のこと
、ＳｉＯ２膜を形成できるものであれば前記と同様にし
て接着することができる。By using the siloxane bond as described above, silicon
Any material other than a wafer, such as a GaAs wafer, or any material on which a SiO2 film can be formed can be bonded in the same manner as described above.
”前記の説明、特に、第７図及びそれに関する説明から
明らかなように、従来技術に依った場合、接着されたＳ
ｉ Ｏ２膜２及び４の界面に剥離部分７を生ずること
が多く、均一に接着するのは容易でない。``As is clear from the foregoing description, particularly from FIG. 7 and the related description, in the prior art the bonded
A peeled portion 7 often occurs at the interface between the i O2 films 2 and 4, and it is not easy to bond them uniformly.
本発明は、シラノール基の脱水縮合反応に依るシロキサ
ン結合を利用してウェハを接着するに際し、その界面に
剥離部分が発生することがないウェハ接着方法を提供し
ようとする。The present invention aims to provide a wafer bonding method that does not generate peeling portions at the interface when bonding wafers using siloxane bonds resulting from a dehydration condensation reaction of silanol groups.
前記したように、ウェハ１及び３を接着して剥離部分７
を生ずるのは、水分が気化して空隙が形成されることに
依るものである。As described above, the wafers 1 and 3 are bonded and the peeled portion 7 is
This is caused by the vaporization of moisture and the formation of voids.
従って、これを回避するには、５ｉ０２膜２及び４に吸
着される水分を少なくすることが必要である。Therefore, to avoid this, it is necessary to reduce the amount of water adsorbed by the 5i02 films 2 and 4.
第１図及び第２図は本発明の詳細な説明する為のウェハ
の要部切断側面図を表し、以下、これ等の図を参照しつ
つ説明する。1 and 2 are cross-sectional side views of essential parts of a wafer for explaining the present invention in detail, and the following description will be made with reference to these figures.
第１図参照
（１）表面にＳｉＯ２膜２を有するシリコン・ウェハ１
と同じく表面にＳ ｆ Ｏ２膜４を有するシリコン・ウ
ェハ３を用意し、Ｓ ｉ Ｏ２膜２の表面は形成時のま
まとし、５ｉ０２膜４の表面は親水性にする。See Figure 1 (1) Silicon wafer 1 with SiO2 film 2 on the surface
Similarly, a silicon wafer 3 having a S f O2 film 4 on its surface is prepared, the surface of the S i O2 film 2 is left as it was when it was formed, and the surface of the 5i02 film 4 is made hydrophilic.
これに依り、５ｉ０２膜４の表面には水分が吸着されて
水分層６が形成される。As a result, moisture is adsorbed on the surface of the 5i02 film 4 and a moisture layer 6 is formed.
第２図参照
（２） ウェハ１及び３を５ｉ０２膜２と４が対向す
るように重ね合わせ、熱処理を行って接着を行う。See FIG. 2 (2) Wafers 1 and 3 are placed one on top of the other so that 5i02 films 2 and 4 face each other, and bonded by heat treatment.
このようにして接着を行うと、Ｓ ｉ Ｏ２膜２と４の
間に介在する水分は従来技術に依る場合の半分以下にな
り、その界面に空隙が発生することはなく、従って、剥
離部分は存在しない。When bonding is performed in this way, the amount of water intervening between the SiO2 films 2 and 4 is less than half of that in the case of conventional technology, and no voids are generated at the interface, so the peeled portion is not exist.
前記したようなことから、本発明に依るウェハ接着方法
に於いては、接着されるべきウェハ（例えばシリコン・
ウェハ１１及び１３）の表面に二酸化シリコン膜（例え
ば５ｉ０２膜１２及び５ｉ０２膜１４）を形成する工程
と、次いで、一方のウェハに於ける二酸化シリコン膜の
表面に親水性処理（例えばＨ２ＳＯ４＋Ｈ２Ｏ２（２：
１）液中に浸漬）を施す工程と、次いで、親水性処理を
施したウェハと施していないウェハとを二酸化シリコン
膜が対向するように重ね合わせて熱処理する工程とが含
まれてなる構成を採っている。As described above, in the wafer bonding method according to the present invention, the wafer to be bonded (for example, silicon
Forming a silicon dioxide film (for example, 5i02 film 12 and 5i02 film 14) on the surface of the wafers 11 and 13), and then applying a hydrophilic treatment (for example, H2SO4+H2O2 (2:
1) a process of immersing the wafer in a liquid), and then a process of superimposing a wafer that has undergone hydrophilic treatment and a wafer that has not undergone hydrophilic treatment so that their silicon dioxide films face each other and heat-treating the wafer. I'm picking it up.
前記手段に依ると、接着すべきウェハの一方の表面は水
分を吸着し易い状態に、また、他方は水分・を吸着し難
い状態になっていて、接着時にウェハ間に介在する水分
は従来技術に依る場合と比較すると約半分の量になって
いるから、接着の為の熱処理を行っても、界面に空隙が
できる程の気体は発生せず、従って、剥離も起こらずに
均一な接着が可能である。According to the above means, one surface of the wafers to be bonded is in a state where it is easy to adsorb moisture, and the other surface is in a state where it is difficult to adsorb moisture. The amount is about half that of the case where the bonding is done, so even if heat treatment is performed for bonding, gas will not be generated to the extent that voids will form at the interface, and therefore uniform bonding will not occur without peeling. It is possible.
第３図乃至第５図は本発明一実施例を解説する為の工程
要所に於けるウェハの要部切断側面図を表し、以下、こ
れ等の図を参照しつつ説明する。FIGS. 3 to 5 are cross-sectional side views of essential parts of a wafer at key points in the process for explaining one embodiment of the present invention, and the following description will be made with reference to these figures.
第３図参照
（１） 熱酸化法を適用することに依り、シリコン・
ウェハ１１の表面にはＳｔＯ，膜１２を、そして、シリ
コン・ウェハ１３の表面には５ｉ０２膜１４をそれぞれ
成長させる。See Figure 3 (1) By applying the thermal oxidation method, silicon
A StO film 12 is grown on the surface of the wafer 11, and a 5i02 film 14 is grown on the surface of the silicon wafer 13.
この場合、Ｓｉｏ２膜１２及び１４の厚さとしては、１
００ （ｎｍ） 〜１０００ （ｎｍ）、好ましくは２
００（ｎｍ）程度にすると良い。In this case, the thickness of the Sio2 films 12 and 14 is 1
00 (nm) to 1000 (nm), preferably 2
It is preferable to set it to about 00 (nm).
ＳｉＯ２膜１２及び１４の厚さを２００（ｎｍ〕とする
には、温度１０００（”Ｃ）の酸化性雰囲気中にて４５
〔分〕の熱酸化を行うことで達成される。In order to make the thickness of the SiO2 films 12 and 14 200 (nm), the thickness of
This is achieved by performing thermal oxidation for [minutes].
第４図参照
（２）Ｓｉ０２膜１４が成長されたシリコン・ウェハ１
３をＨ２ＳＯ４＋Ｈ２Ｏ２（２： １）液中に浸漬し、
Ｓ ｉ ０２膜１４０表面を親水性にする。尚、記号１
５はＳ ｉ Ｏ２膜１４の表面に在る水分層を指示して
いる。See Figure 4 (2) Silicon wafer 1 on which Si02 film 14 is grown
3 is immersed in H2SO4 + H2O2 (2: 1) solution,
The surface of the S i 02 film 140 is made hydrophilic. Furthermore, symbol 1
5 indicates a moisture layer existing on the surface of the S i O 2 film 14 .
第５図参照
（３１Ｓ ｉ Ｏ２膜工４に親水性処理を施したシリコ
ン・ウェハ１３及び親水性処理を施していない５ｉ０２
膜１２を有するシリコン・ウェハ１１を５ｉ０２膜１２
及び１４が対向するように重ね合わせた後、温度を９０
０（ｔ）とし、時間１０〔分〕の熱処理を行って両者を
接着する。See Figure 5 (31S i silicon wafer 13 with O2 film 4 subjected to hydrophilic treatment and 5i02 without hydrophilic treatment).
5i02 silicon wafer 11 with film 12
and 14 are placed on top of each other so that they face each other, and then the temperature is set to 90
0 (t) and heat treatment for 10 minutes to bond the two.
このようにして接着したシリコン・ウェハ１１及び１２
の界面には空隙は発生せず、従って、剥離もなかった。Silicon wafers 11 and 12 bonded in this way
No voids were generated at the interface, and therefore there was no peeling.
、本発明に依るウェハ接着方法に於いては、一方のウェ
ハに於ける二酸化シリコン膜表面には親水性処理を施し
、他方のウェハに於ける二酸化シリコン膜表面は親水性
処理を行うことなく、それ等を重ね合わせて熱処理を行
って接着するようにしている。In the wafer bonding method according to the present invention, the silicon dioxide film surface of one wafer is subjected to hydrophilic treatment, and the silicon dioxide film surface of the other wafer is not subjected to hydrophilic treatment. They are stacked on top of each other and heat treated to bond them together.
前記構成に依ると、接着すべきウェハの一方の−表面は
親水性で水分を吸着し易い状態に、また、他方は水分を
吸着し難い状態になっていて、接着時にウェハ間に介在
する水分は従来技術に依る場合と比較すると約半分の量
になっているから、接着の為の熱処理を行っても、界面
に空隙ができる程の気体は発生せず、従って、剥離も起
こらずに均一な接着が可能である。According to the above configuration, one surface of the wafers to be bonded is hydrophilic and easily adsorbs moisture, and the other surface is in a state that is difficult to adsorb moisture, so that the moisture intervening between the wafers during bonding is The amount is about half that of the case using conventional technology, so even if heat treatment is performed for adhesion, gas is not generated to the extent that voids are created at the interface, and therefore, there is no peeling and a uniform bonding is achieved. Adhesion is possible.
第１図及び第２図は本発明の詳細な説明する為のウェハ
の要部切断側面図、第３図乃至第５図は本発明一実施例
を説明する為の工程要所に於けるウェハの要部切断側面
図、第６図及び第７図は従来例を説明する為の工程要所
に於けるウェハの要部切断側面図をそれぞれ表している
。
図に於いて、１１及び１３はシリコン・ウェハ、１２及
び１４は５ｉ０２膜、１５は水分層をそれぞれ示してい
る。
特許出願人 富士通株式会社
代理人弁理士 相 谷 昭 司
代理人弁理士 渡 邊 弘 −
本完明の原理を説明する為のウェハの要部切断側面図本
弁明の原理を説明する為のウェハの要部切断側面図第２
図
第３図
第４図
抗５図
第６図FIGS. 1 and 2 are cross-sectional side views of essential parts of a wafer for explaining the present invention in detail, and FIGS. 3 to 5 are cross-sectional views of a wafer at important points in the process for explaining an embodiment of the present invention. FIGS. 6 and 7 are cross-sectional side views of essential parts of a wafer at key points in the process for explaining the conventional example. In the figure, 11 and 13 are silicon wafers, 12 and 14 are 5i02 films, and 15 is a water layer, respectively. Patent Applicant Fujitsu Ltd. Representative Patent Attorney Akio Aitani Representative Patent Attorney Hiroshi Watanabe - Cutaway side view of the main part of a wafer to explain the principle of this defense Main part cutaway side view 2nd
Figure 3 Figure 4 Diagram 5 Figure 6
Claims (1)
する工程と、 次いで、一方のウェハに於ける二酸化シリコン膜の表面
に親水性処理を施す工程と、 次いで、親水性処理を施したウェハと施していないウェ
ハとを二酸化シリコン膜が対向するように重ね合わせて
熱処理する工程と が含まれてなることを特徴とするウェハ接着方法。[Claims] A step of forming a silicon dioxide film on the surface of the wafers to be bonded, a step of performing hydrophilic treatment on the surface of the silicon dioxide film on one of the wafers, and then a hydrophilic treatment. A wafer bonding method comprising the steps of stacking a wafer subjected to the process and a wafer not subjected to the process so that their silicon dioxide films face each other and subjecting them to heat treatment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25705486A JPS63111652A (en) | 1986-10-30 | 1986-10-30 | Wafer bonding |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25705486A JPS63111652A (en) | 1986-10-30 | 1986-10-30 | Wafer bonding |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63111652A true JPS63111652A (en) | 1988-05-16 |
Family
ID=17301095
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25705486A Pending JPS63111652A (en) | 1986-10-30 | 1986-10-30 | Wafer bonding |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63111652A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09223781A (en) * | 1995-12-15 | 1997-08-26 | Komatsu Electron Metals Co Ltd | Manufacture of clad soi wafer |
| KR100236065B1 (en) * | 1996-12-17 | 1999-12-15 | Hyundai Micro Electronics Co | Hydrophilic method of semiconductor device |
| WO2003097552A1 (en) * | 2002-04-30 | 2003-11-27 | Agency For Science Technology And Research | A method of wafer/substrate bonding |
| US7153759B2 (en) | 2004-04-20 | 2006-12-26 | Agency For Science Technology And Research | Method of fabricating microelectromechanical system structures |
| US7259466B2 (en) | 2002-12-17 | 2007-08-21 | Finisar Corporation | Low temperature bonding of multilayer substrates |
| US7361593B2 (en) | 2002-12-17 | 2008-04-22 | Finisar Corporation | Methods of forming vias in multilayer substrates |
| US7927975B2 (en) | 2009-02-04 | 2011-04-19 | Micron Technology, Inc. | Semiconductor material manufacture |
-
1986
- 1986-10-30 JP JP25705486A patent/JPS63111652A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09223781A (en) * | 1995-12-15 | 1997-08-26 | Komatsu Electron Metals Co Ltd | Manufacture of clad soi wafer |
| KR100236065B1 (en) * | 1996-12-17 | 1999-12-15 | Hyundai Micro Electronics Co | Hydrophilic method of semiconductor device |
| WO2003097552A1 (en) * | 2002-04-30 | 2003-11-27 | Agency For Science Technology And Research | A method of wafer/substrate bonding |
| US7192841B2 (en) | 2002-04-30 | 2007-03-20 | Agency For Science, Technology And Research | Method of wafer/substrate bonding |
| US7259466B2 (en) | 2002-12-17 | 2007-08-21 | Finisar Corporation | Low temperature bonding of multilayer substrates |
| US7361593B2 (en) | 2002-12-17 | 2008-04-22 | Finisar Corporation | Methods of forming vias in multilayer substrates |
| US7153759B2 (en) | 2004-04-20 | 2006-12-26 | Agency For Science Technology And Research | Method of fabricating microelectromechanical system structures |
| US7405466B2 (en) | 2004-04-20 | 2008-07-29 | Agency For Science, Technology And Research | Method of fabricating microelectromechanical system structures |
| US7927975B2 (en) | 2009-02-04 | 2011-04-19 | Micron Technology, Inc. | Semiconductor material manufacture |
| US8389385B2 (en) | 2009-02-04 | 2013-03-05 | Micron Technology, Inc. | Semiconductor material manufacture |
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