JPS63108650U - - Google Patents
Info
- Publication number
- JPS63108650U JPS63108650U JP20070686U JP20070686U JPS63108650U JP S63108650 U JPS63108650 U JP S63108650U JP 20070686 U JP20070686 U JP 20070686U JP 20070686 U JP20070686 U JP 20070686U JP S63108650 U JPS63108650 U JP S63108650U
- Authority
- JP
- Japan
- Prior art keywords
- concentration impurity
- impurity region
- field effect
- effect transistor
- insulated gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20070686U JPS63108650U (enExample) | 1986-12-27 | 1986-12-27 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20070686U JPS63108650U (enExample) | 1986-12-27 | 1986-12-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63108650U true JPS63108650U (enExample) | 1988-07-13 |
Family
ID=31163470
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20070686U Pending JPS63108650U (enExample) | 1986-12-27 | 1986-12-27 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63108650U (enExample) |
-
1986
- 1986-12-27 JP JP20070686U patent/JPS63108650U/ja active Pending
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