JPS63108650U - - Google Patents

Info

Publication number
JPS63108650U
JPS63108650U JP20070686U JP20070686U JPS63108650U JP S63108650 U JPS63108650 U JP S63108650U JP 20070686 U JP20070686 U JP 20070686U JP 20070686 U JP20070686 U JP 20070686U JP S63108650 U JPS63108650 U JP S63108650U
Authority
JP
Japan
Prior art keywords
concentration impurity
impurity region
field effect
effect transistor
insulated gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20070686U
Other languages
English (en)
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP20070686U priority Critical patent/JPS63108650U/ja
Publication of JPS63108650U publication Critical patent/JPS63108650U/ja
Pending legal-status Critical Current

Links

JP20070686U 1986-12-27 1986-12-27 Pending JPS63108650U (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20070686U JPS63108650U (de) 1986-12-27 1986-12-27

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20070686U JPS63108650U (de) 1986-12-27 1986-12-27

Publications (1)

Publication Number Publication Date
JPS63108650U true JPS63108650U (de) 1988-07-13

Family

ID=31163470

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20070686U Pending JPS63108650U (de) 1986-12-27 1986-12-27

Country Status (1)

Country Link
JP (1) JPS63108650U (de)

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