JPS63107808A - Preparation of octachlorotrisilane - Google Patents
Preparation of octachlorotrisilaneInfo
- Publication number
- JPS63107808A JPS63107808A JP25193986A JP25193986A JPS63107808A JP S63107808 A JPS63107808 A JP S63107808A JP 25193986 A JP25193986 A JP 25193986A JP 25193986 A JP25193986 A JP 25193986A JP S63107808 A JPS63107808 A JP S63107808A
- Authority
- JP
- Japan
- Prior art keywords
- contact
- copper
- octachlorotrisilane
- chlorine gas
- particles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- PZKOFHKJGUNVTM-UHFFFAOYSA-N trichloro-[dichloro(trichlorosilyl)silyl]silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)[Si](Cl)(Cl)Cl PZKOFHKJGUNVTM-UHFFFAOYSA-N 0.000 title claims abstract description 17
- 239000011856 silicon-based particle Substances 0.000 claims abstract description 25
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 21
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000010949 copper Substances 0.000 claims abstract description 17
- 229910052802 copper Inorganic materials 0.000 claims abstract description 14
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 claims abstract description 7
- 238000004519 manufacturing process Methods 0.000 claims description 27
- 239000005749 Copper compound Substances 0.000 claims description 15
- 150000001880 copper compounds Chemical class 0.000 claims description 15
- 238000005660 chlorination reaction Methods 0.000 claims description 11
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 7
- 239000005046 Chlorosilane Substances 0.000 claims description 5
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 claims description 5
- 229960004643 cupric oxide Drugs 0.000 claims description 4
- 229910021591 Copper(I) chloride Inorganic materials 0.000 claims description 3
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 claims description 3
- 229960003280 cupric chloride Drugs 0.000 claims description 3
- 229940045803 cuprous chloride Drugs 0.000 claims description 3
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 claims description 2
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 claims description 2
- 229940112669 cuprous oxide Drugs 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 10
- 239000010703 silicon Substances 0.000 abstract description 10
- 239000004065 semiconductor Substances 0.000 abstract description 2
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 abstract description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 abstract 5
- 229910052801 chlorine Inorganic materials 0.000 abstract 5
- 239000000460 chlorine Substances 0.000 abstract 5
- 229910021592 Copper(II) chloride Inorganic materials 0.000 abstract 1
- 229910003910 SiCl4 Inorganic materials 0.000 abstract 1
- 239000007858 starting material Substances 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 238000006243 chemical reaction Methods 0.000 description 12
- 238000000034 method Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000011863 silicon-based powder Substances 0.000 description 3
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 3
- 239000006227 byproduct Substances 0.000 description 2
- 238000004821 distillation Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- YGYGASJNJTYNOL-CQSZACIVSA-N 3-[(4r)-2,2-dimethyl-1,1-dioxothian-4-yl]-5-(4-fluorophenyl)-1h-indole-7-carboxamide Chemical compound C1CS(=O)(=O)C(C)(C)C[C@@H]1C1=CNC2=C(C(N)=O)C=C(C=3C=CC(F)=CC=3)C=C12 YGYGASJNJTYNOL-CQSZACIVSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910021346 calcium silicide Inorganic materials 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910021338 magnesium silicide Inorganic materials 0.000 description 1
- YTHCQFKNFVSQBC-UHFFFAOYSA-N magnesium silicide Chemical compound [Mg]=[Si]=[Mg] YTHCQFKNFVSQBC-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Silicon Compounds (AREA)
- Catalysts (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はシリコン粒子を塩素化してクロロシランを製造
する方法において、オクタクロロトリシランの生成率の
高い製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method for producing chlorosilane by chlorinating silicon particles, which produces a high production rate of octachlorotrisilane.
オクタクロロトリシラン５ｉ３Ｃ１Ｂは熱分解してエピ
タキシャルシリコン等とする事も勿論出来るが、更に還
元してトリシラン（Ｓｉ３Ｈｓ）とし、半導体用シリコ
ンやアモルファスシリコンが製造される。Of course, octachlorotrisilane 5i3C1B can be thermally decomposed to produce epitaxial silicon or the like, but it is further reduced to trisilane (Si3Hs) to produce silicon for semiconductors or amorphous silicon.
従来オクタクロロトリシランはカルシウムシリサイド等
の金属とケイ素の合金や金属ケイ素を塩素化してクロロ
シランを製造する際に、テトラクロロシラン（ＳｉＣ１
４）やヘキサクロロジシラン（Ｓｉ２Ｃ１ｅ）と共に生
成されている。Conventionally, octachlorotrisilane was used as tetrachlorosilane (SiC1
4) and hexachlorodisilane (Si2C1e).
また他にはマグネシウムシリサイドを酸によって分解し
て、シラン（ＳｉＨ４）やジシラン（Ｓｉ２Ｈａ）、ト
リシラン（Ｓｉ３Ｈ８）を生成した後、該トリシランを
塩素化して製造する方法がある。Another method is to decompose magnesium silicide with an acid to produce silane (SiH4), disilane (Si2Ha), or trisilane (Si3H8), and then chlorinate the trisilane.
ところが、上記いずれの方法においてもオクタクロロト
リシラン５ｉ３Ｃ１Ｂの生成率は極めて低く、例えば金
属シリコンに塩素ガスを通じる従来方法においては、主
な生成物は５ｉＣ１４であり、５ｉ３Ｃ１４は５ｉＣ１
４生成に伴って副生するものを利用しているに過ぎない
。囚に従来方法によって得られる５ｉ３Ｃ１６の生成率
が５％を越えるのは極めて稀であり１通常１％未満であ
る。However, in any of the above methods, the production rate of octachlorotrisilane 5i3C1B is extremely low. For example, in the conventional method of passing chlorine gas through metal silicon, the main product is 5iC14, and 5i3C14 is 5iC1
4.It merely utilizes the by-products that accompany the production. It is extremely rare for the production rate of 5i3C16 obtained by conventional methods to exceed 5%, and is usually less than 1%.
前述したようにシリコン粒子に塩素ガスを通じて塩素化
する方法においては５ｉＣ１４が生成し易く、クロロポ
リシラン５ｉｎＣｈｎ＋ｚ （口≧２）の生成率は低い
。本発明者等は１本発明に先立ち、上記シリコンの塩素
化法において、シリコン粒子に銅、銅化合物を添加して
塩素化すれば、５ｉＣ１４の生成が抑制され、クロロポ
リシランの生成が促進されることを見出した。本発明者
等は、５ｉ３Ｃ１４の生成率を高める観点から上記製造
方法を更に改善し、塩素ガスをシリコン粒子に接触させ
る前に予め銅ないし銅触媒に接触させ、次いでシリコン
粒子に接触させれば、クロロポリシラン（Ｓｉ２Ｃ１６
、Ｓｉ３Ｃ］４）のうち、特にオクタクロロトリシラン
５ｉ３Ｃ１４の生成率が格段に向上することを見出した
。As described above, in the method of chlorinating silicon particles by passing chlorine gas, 5iC14 is easily produced, and the production rate of chloropolysilane 5inChn+z (mouth≧2) is low. Prior to the present invention, the present inventors discovered that in the silicon chlorination method described above, by adding copper or a copper compound to silicon particles and chlorinating them, the production of 5iC14 is suppressed and the production of chloropolysilane is promoted. I discovered that. The present inventors have further improved the above production method from the viewpoint of increasing the production rate of 5i3C14, by bringing the chlorine gas into contact with copper or a copper catalyst in advance before contacting the silicon particles, and then bringing it into contact with the silicon particles. Chloropolysilane (Si2C16
, Si3C]4), the production rate of octachlorotrisilane 5i3C14 was particularly found to be significantly improved.
本発明によれば、シリコン粒子に塩素ガスを通じ、シリ
コン粒子の塩素化によりクロロシランを製造する際、塩
素ガスをシリコン粒子に接触させる前に予め加熱した銅
ないし銅化合物に塩素ガスを接触させ、次いでシリコン
粒子に導入することを特徴とするオクタクロロトリシラ
ンの製造方法が提供される。According to the present invention, when producing chlorosilane by passing chlorine gas through silicon particles and chlorinating the silicon particles, before bringing the chlorine gas into contact with the silicon particles, the chlorine gas is brought into contact with pre-heated copper or a copper compound, and then A method for producing octachlorotrisilane is provided, which comprises introducing octachlorotrisilane into silicon particles.
またその好適な実施態様として、塩素化の反応温度が１
００℃以上２５０℃以下である製造方法、あるいは、銅
ないし銅化合物と塩素ガスとの接触温度が５０℃以上３
５０℃以下である製造方法、あるいは銅化合物が塩化第
一銅、塩化第二銅、酸化第一銅、酸化第二銅である製造
方法が夫々提供される。In a preferred embodiment, the chlorination reaction temperature is 1
A manufacturing method in which the temperature is 00°C or more and 250°C or less, or the contact temperature between copper or a copper compound and chlorine gas is 50°C or more3
A manufacturing method in which the temperature is 50° C. or lower, or a manufacturing method in which the copper compound is cuprous chloride, cupric chloride, cuprous oxide, or cupric oxide is provided.
本発明において、塩素ガスをシリコン粒子に接触させて
、シリコンを塩素化するに際し、予め塩素ガスを銅ない
し銅化合物に接触させ、次いでシリコン粒子に接触させ
る。In the present invention, when bringing chlorine gas into contact with silicon particles to chlorinate silicon, the chlorine gas is brought into contact with copper or a copper compound in advance, and then brought into contact with the silicon particles.
銅化合物としては、シリコン粒子ないし生成ガスを汚染
しないものが用いられる。塩素化反応に用いることがら
該銅化合物としては塩化第一銅ＣｕＣ１，塩化第二銅Ｃ
ｕＣｌ２が好適に用いられる。また酸化銅ＣｕＯ１Ｃｕ
２０を用いることができる。該銅、銅化合物は、例えば
、塩素ガスの供給路に沿って。As the copper compound, one that does not contaminate the silicon particles or the generated gas is used. The copper compounds used in the chlorination reaction include cuprous chloride CuC1, cupric chloride C
uCl2 is preferably used. Also, copper oxide CuO1Cu
20 can be used. The copper and copper compound are applied, for example, along the chlorine gas supply path.
反応容器のシリコン粒子充填層の直前に該シリコン層と
は分離して充填される。Immediately before the silicon particle packed layer of the reaction vessel, it is filled separately from the silicon layer.
銅、銅化合物と塩素ガスとの接触温度は５０℃〜３５０
℃が好ましい。５０℃より低いと、塩素ガスを接触させ
る効果が不充分であり、 また３５０℃を超えて高温に
しても効果に大差なく、経済的設備的観点から３５０℃
以下とするのが良い。The contact temperature between copper, copper compounds and chlorine gas is 50°C to 350°C.
°C is preferred. If it is lower than 50℃, the effect of contacting chlorine gas will be insufficient, and even if the temperature is higher than 350℃, there will be no significant difference in the effect.
It is best to set it to the following.
塩素ガスを銅、銅化合物に接触させた後に、シリコン粒
子に接触させ、シリコンを塩素化する。After bringing chlorine gas into contact with copper and a copper compound, it is brought into contact with silicon particles to chlorinate the silicon.
該塩素化の反応温度は１００℃〜２５０℃が好適である
。The reaction temperature for the chlorination is preferably 100°C to 250°C.
１００℃より低いと、塩素化が進行せず、また２５０℃
を超えると生成物が分解し易くなる。該シリコンの塩素
化により、主に５ｉＣ１４と５ｉ３Ｃ１Ｂ、および微址
の５ｉ２Ｃ１６等を含むクロロシランガスが生成し、こ
れを凝縮液として捕集し、蒸留分離することによりＳｉ
３Ｃ１ｇを得ることができる。上記塩素化によって得ら
れるクロロシランガスには５ｉＣ１４が約７０％前後、
５ｉ３Ｃ１Ｂが約３０％前後含有されており。If the temperature is lower than 100℃, chlorination will not proceed, and if the temperature is lower than 250℃
If it exceeds 100%, the product will be easily decomposed. Chlorination of silicon produces chlorosilane gas containing mainly 5iC14, 5i3C1B, and a small amount of 5i2C16, which is collected as a condensate and separated by distillation.
3C1g can be obtained. The chlorosilane gas obtained by the above chlorination contains about 70% 5iC14,
Contains approximately 30% of 5i3C1B.
５ｉＣ１４の量が多いものの、従来の製造方法に比較す
ると、従来Ｓｉ３Ｃ］４の生成率が通常１％以下である
ことを考えれば、５ｉ３Ｃ１４の生成率が飛躍的に向上
すると云える。Although the amount of 5iC14 is large, it can be said that the production rate of 5i3C14 is dramatically improved considering that the production rate of conventional Si3C]4 is usually 1% or less compared to the conventional manufacturing method.
本発明において使用されるシリコンは可及的に高純度で
ある方が不純物に起因する固形副生物の生成量が少ない
。純度はこのことを考慮して決定される問題であるが、
９７％以上が望ましい。The higher the purity of the silicon used in the present invention, the lower the amount of solid by-products caused by impurities produced. Purity is a matter to be determined with this in mind,
97% or more is desirable.
本発明方法において、シリコン粒の平均粒径は５０μｍ
以上２ＩＩＩＩ１１以下が望ましく、塩素化は１４０℃
以上３００℃以下で行なう事が望ましい。シリコン粒の
平均粒径が２ｍ＋＋＋より大きいと活性に乏しくクロロ
ポリシランの生成率が下がり、好ましくなく。In the method of the present invention, the average particle size of silicon particles is 50 μm.
Above 2III and below 11 is desirable, and chlorination is at 140℃
It is desirable to carry out the process at a temperature of 300°C or less. If the average particle diameter of the silicon particles is larger than 2 m+++, the activity is poor and the production rate of chloropolysilane decreases, which is not preferable.
５０μｍより小さいと反応中に粉塵が発生しやはり好ま
しくない。If it is smaller than 50 μm, dust will be generated during the reaction, which is also not preferable.
本発明により、カルシウムシリサイドの塩素化等の従来
方法では実現出来なかった高い生成率でオクタクロロト
リシランを製造する事ができる。According to the present invention, octachlorotrisilane can be produced at a high production rate that could not be achieved by conventional methods such as chlorination of calcium silicide.
次に本発明を実施例によってより具体的に説明するが、
以下の実施例は本発明の範囲を限定するものではない。Next, the present invention will be explained more specifically by examples.
The following examples are not intended to limit the scope of the invention.
実施例１
平均粒径２μ償のケイ素粉末３０ｇを内径４ｃｒｎφの
ガラス製反応管に充填した。別に＠線（径約０．１１、
長さ約５０＋＋＋＋＋） １００本を互いに絡ませて径
約４０ｍｍφのボール状にして同じ反応管に充填し全体
を加熱した。この時、ケイ素粉末と銅線ボールは接触し
ておらず、またケイ素粉末は２００℃に銅線ボールは１
００℃になる様に加熱した。この状態で銅線ボールが充
填されている側から塩素ガスを５０＋＋＋ｆｌ／分の速
度で反応管に導入し１５時間反応させ、生成ガスを凝縮
緯として捕し、蒸溜によりオクタクロロトリシランＳｉ
３Ｃ１ｇを単離した。得られた５ｉ３Ｃ１ａは３９．７
ｇであり、生成率はケイ素原子換算で３０．２％であ
った。囚に、生成ガスの残余は大部分が５ｉＣ１４であ
った。Example 1 A glass reaction tube with an inner diameter of 4 crnφ was filled with 30 g of silicon powder having an average particle size of 2 μm. Separately @ wire (diameter approx. 0.11,
100 pieces (length: about 50 +++++) were entwined with each other to form a ball with a diameter of about 40 mm, filled in the same reaction tube, and heated as a whole. At this time, the silicon powder and the copper wire ball are not in contact with each other, and the silicon powder is at 200°C and the copper wire ball is at 1
It was heated to 00°C. In this state, chlorine gas was introduced into the reaction tube from the side filled with copper wire balls at a rate of 50+++ fl/min, and the reaction was allowed to proceed for 15 hours. The produced gas was captured as condensation liquid, and by distillation, octachlorotrisilane Si
1 g of 3C was isolated. The obtained 5i3C1a is 39.7
g, and the production rate was 30.2% in terms of silicon atoms. In fact, the remainder of the produced gas was mostly 5iC14.
実施例２
銅線ボールを酸化第二銅線のボールを用いた他は、実施
例１と同条件で反応を行った。オクタクロロトリシラン
の生成社は３３．８ ｇであり、生成率は２５．７％で
あった。Example 2 A reaction was carried out under the same conditions as in Example 1, except that a cupric oxide wire ball was used as the copper wire ball. The amount of octachlorotrisilane produced was 33.8 g, and the production rate was 25.7%.
実施例３〜４．比較例１
塩素化の反応温度を変えた他は実施例１と同条件で反応
を行った。結果は表１の通りである。Examples 3-4. Comparative Example 1 A reaction was carried out under the same conditions as in Example 1 except that the reaction temperature for chlorination was changed. The results are shown in Table 1.
表１
比較例１５００
実施例３ １００ ２６．１１１
４ ２５０ ２８．９参考例
３００ ４．３実施例５〜６．比
較例２、参考例
銅線ボールの温度を変えた他は実施例１と同様の反応を
行った。結果は表２の通りである。Table 1 Comparative example 1500 Example 3 100 26.111
4 250 28.9 Reference example
300 4.3 Examples 5-6. Comparative Example 2, Reference Example The same reaction as in Example 1 was carried out except that the temperature of the copper wire ball was changed. The results are shown in Table 2.
表２
比較例２２５゜
実施例５ ５０ ２７．４１１
６ ３５０ ２９．７参考例
４００ ２９．３実施例７〜
９
銅線ボールに変えて銅化合物粉５ｇを銅線ボールと同じ
位置に置いた他は実施例１と同条件で反応を行った。結
果は表３の通りである。Table 2 Comparative example 225° Example 5 50 27.411
6 350 29.7 Reference example
400 29.3 Example 7~
9 The reaction was carried out under the same conditions as in Example 1, except that 5 g of copper compound powder was placed in the same position as the copper wire ball instead of the copper wire ball. The results are shown in Table 3.
表３
実施例 銅化合物の種類 オクタクロロトリシランの生
成率〔％〕Table 3 Example Type of copper compound Production rate of octachlorotrisilane [%]
Claims (4)
塩素化によりクロロシランを製造する際、塩素ガスをシ
リコン粒子に接触させる前に予め加熱した銅ないし銅化
合物に塩素ガスを接触させ、次いでシリコン粒子に導入
することを特徴とするオクタクロロトリシランの製造方
法。(1) When producing chlorosilane by passing chlorine gas through silicon particles and chlorinating the silicon particles, before bringing the chlorine gas into contact with the silicon particles, the chlorine gas is brought into contact with pre-heated copper or a copper compound, and then the silicon particles are exposed to the chlorine gas. A method for producing octachlorotrisilane, which comprises introducing octachlorotrisilane.
ある特許請求の範囲第１項の製造方法。(2) The manufacturing method according to claim 1, wherein the chlorination reaction temperature is 100°C or more and 250°C or less.
℃以上３５０℃以下である特許請求の範囲第１項の製造
方法。(3) The contact temperature between copper or copper compound and chlorine gas is 50
2. The manufacturing method according to claim 1, wherein the temperature is from .degree. C. to 350.degree.
、酸化第二銅である特許請求の範囲第１項の製造方法。(4) The manufacturing method according to claim 1, wherein the copper compound is cuprous chloride, cupric chloride, cuprous oxide, or cupric oxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25193986A JPS63107808A (en) | 1986-10-24 | 1986-10-24 | Preparation of octachlorotrisilane |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25193986A JPS63107808A (en) | 1986-10-24 | 1986-10-24 | Preparation of octachlorotrisilane |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63107808A true JPS63107808A (en) | 1988-05-12 |
Family
ID=17230221
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25193986A Pending JPS63107808A (en) | 1986-10-24 | 1986-10-24 | Preparation of octachlorotrisilane |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63107808A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5061672A (en) * | 1990-01-30 | 1991-10-29 | Elkem Metals Company | Active mass for making organohalosilanes |
-
1986
- 1986-10-24 JP JP25193986A patent/JPS63107808A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5061672A (en) * | 1990-01-30 | 1991-10-29 | Elkem Metals Company | Active mass for making organohalosilanes |
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