JPS63106609A - Optical waveguide - Google Patents
Optical waveguideInfo
- Publication number
- JPS63106609A JPS63106609A JP25078186A JP25078186A JPS63106609A JP S63106609 A JPS63106609 A JP S63106609A JP 25078186 A JP25078186 A JP 25078186A JP 25078186 A JP25078186 A JP 25078186A JP S63106609 A JPS63106609 A JP S63106609A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- substrate
- sputtering
- al2o3
- optical waveguide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 8
- 239000010409 thin film Substances 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000004544 sputter deposition Methods 0.000 claims abstract description 12
- 238000007740 vapor deposition Methods 0.000 claims abstract description 9
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims description 5
- 229910000423 chromium oxide Inorganic materials 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052593 corundum Inorganic materials 0.000 abstract description 7
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract description 7
- 239000013078 crystal Substances 0.000 abstract description 5
- 229910052681 coesite Inorganic materials 0.000 abstract description 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 4
- 239000010408 film Substances 0.000 abstract description 4
- 239000000377 silicon dioxide Substances 0.000 abstract description 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 4
- 229910052682 stishovite Inorganic materials 0.000 abstract description 4
- 229910052905 tridymite Inorganic materials 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 2
- 238000010438 heat treatment Methods 0.000 abstract 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 abstract 1
- BYFGZMCJNACEKR-UHFFFAOYSA-N aluminium(i) oxide Chemical compound [Al]O[Al] BYFGZMCJNACEKR-UHFFFAOYSA-N 0.000 description 2
- 235000001674 Agaricus brunnescens Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Optical Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】 見匪夏技権光互 本発明は、先導波路に関する。[Detailed description of the invention] Mizuka Gigon Kotou The present invention relates to a guiding waveguide.
見匪災従来艮権
従来、知られている導波路としては、Ａｌ□０゜基板上
にＰＬＺＴ等の高屈折率の物質を薄膜状に形成した導波
路が知られている。Conventional Waveguides Conventionally known are waveguides in which a thin film of a high refractive index material such as PLZT is formed on an Al□0° substrate.
上記の形の導波路を用いる場合は、単結晶からなるＡｌ
、Ｏ，基板を必要とされ、工業的に高価なものとなって
いた。そこで出来るだけ安価でかつ、簡易に製造できる
基板が要望されていた。When using the above-mentioned waveguide, Al
, O, and a substrate, making it industrially expensive. Therefore, there has been a demand for a board that is as inexpensive as possible and that can be easily manufactured.
本発明者等は、鋭意検討した結果、上記問題点を解決す
べく以下の発明をなした。As a result of intensive study, the present inventors have made the following invention to solve the above problems.
ｍ針Ｍ栽。M-needle M-plant.
本発明は、絶縁基板上にＡ１．０３より小さい屈折率か
らなる薄膜を形成し、前記薄膜上にスパッタ及び又は蒸
着法によりＡｌ２Ｏ３薄膜を形成した光導波路に関する
。さらに、他の発明として、絶縁基板上にＡｌ２Ｏ，よ
り小さい屈折率からなる薄膜を形成し、前記薄膜上にス
パッタ及び又は蒸着法により、Ａｌ、Ｏ，と酸化クロム
の混合薄膜を形成し、前記混合薄膜上に、前記混合薄膜
よりも高屈折率である物質の薄膜を形成した光導波路を
提供する。The present invention relates to an optical waveguide in which a thin film having a refractive index smaller than A1.03 is formed on an insulating substrate, and an Al2O3 thin film is formed on the thin film by sputtering and/or vapor deposition. Furthermore, as another invention, a thin film made of Al2O with a smaller refractive index is formed on an insulating substrate, and a mixed thin film of Al, O, and chromium oxide is formed on the thin film by sputtering and/or vapor deposition, and An optical waveguide is provided in which a thin film of a substance having a higher refractive index than the mixed thin film is formed on a mixed thin film.
見更勿几生五皿里 本発明の基板の対象となる絶縁基板は、Ａｌ。Misara Mushroom Gosara The insulating substrate to which the substrate of the present invention is applied is Al.
ｏ３． Ｚ ｎ ｏ、、 Ｓ ｉ Ｏｘ等である。これ
らは、本発明の場合単結晶であることを要しない。つぎ
にＡ１□○、より屈折率の小さい薄膜をこれらの基板上
にスパッタ及び又は蒸着法により薄膜状に形成する。例
えば、Ｓｉｏ２等である。その後、Ａｌ２Ｏ３の薄膜を
スパッタ及び又は蒸着法により形成する。o3. Zno, SiOx, etc. These do not need to be single crystals in the case of the present invention. Next, A1□○, a thin film having a smaller refractive index is formed on these substrates by sputtering and/or vapor deposition. For example, Sio2 etc. Thereafter, a thin film of Al2O3 is formed by sputtering and/or vapor deposition.
この際、基板上の薄膜との密着性を良くするためには、
酸化クロムを含ませた薄膜を形成させることが好ましい
。At this time, in order to improve the adhesion with the thin film on the substrate,
It is preferable to form a thin film containing chromium oxide.
酸化クロムの添加量は、２〜７ｗｔ％程度が好ましい。The amount of chromium oxide added is preferably about 2 to 7 wt%.
また、密着性をさらに強固とするためには、前記薄膜を
形成した基板を２００〜４００℃で５〜１０時間程時間
外理することが好ましい。Further, in order to further strengthen the adhesion, it is preferable to heat the substrate on which the thin film is formed at 200 to 400° C. for about 5 to 10 hours.
以上のように本発明を実施することにより、以下のよう
な効果を得ることができる。By implementing the present invention as described above, the following effects can be obtained.
見肌夏免困
（１）基板が、単結晶であることを要せずに、安価な光
導波路を得ることができる。(1) An inexpensive optical waveguide can be obtained without requiring the substrate to be a single crystal.
実施例１
単結晶でないＡ１□Ｑ３の基板上にスパッタリングによ
りＳｉｎ、膜を形成し、その上にＡ１□○。Example 1 A Sin film was formed by sputtering on a non-single-crystal A1□Q3 substrate, and then A1□○.
膜を酸化クロムが４ｗｔ％となるようにスパッタリング
で形成する。A film is formed by sputtering so that the chromium oxide content is 4 wt %.
この場合、Ａｒ及び０２ガスを導入した高周波スパッタ
により行う。In this case, high frequency sputtering using Ar and 02 gases is performed.
このようにして得られた基板を３００’Ｃ７時間熱処理
することにより、Ｓ ｉ Ｏ２膜を形成した基板との密
着性をさらに強固とする。By heat-treating the substrate thus obtained at 300'C for 7 hours, the adhesion to the substrate on which the SiO2 film is formed is further strengthened.
以上の処理により、安価な先導波路を得た。Through the above processing, an inexpensive leading waveguide was obtained.
Claims (2)
らなる薄膜を形成し、前記薄膜上にスパッタ及び又は蒸
着法によりＡｌ＿２Ｏ＿３薄膜を形成したことを特徴と
する光導波路。(1) An optical waveguide characterized in that a thin film having a refractive index smaller than Al_2O_3 is formed on an insulating substrate, and an Al_2O_3 thin film is formed on the thin film by sputtering and/or vapor deposition.
らなる薄膜を形成し、前記薄膜上にスパッタ及び又は蒸
着法により、Ａｌ＿２Ｏ＿３と酸化クロムの混合薄膜を
形成したことを特徴とする光導波路。(2) An optical waveguide characterized in that a thin film having a refractive index smaller than Al_2O_3 is formed on an insulating substrate, and a mixed thin film of Al_2O_3 and chromium oxide is formed on the thin film by sputtering and/or vapor deposition.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25078186A JPS63106609A (en) | 1986-10-23 | 1986-10-23 | Optical waveguide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25078186A JPS63106609A (en) | 1986-10-23 | 1986-10-23 | Optical waveguide |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63106609A true JPS63106609A (en) | 1988-05-11 |
Family
ID=17212949
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25078186A Pending JPS63106609A (en) | 1986-10-23 | 1986-10-23 | Optical waveguide |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63106609A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0247256A (en) * | 1988-06-22 | 1990-02-16 | Boc Group Inc:The | Formation of an oxide coating by reactive-sputtering |
-
1986
- 1986-10-23 JP JP25078186A patent/JPS63106609A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0247256A (en) * | 1988-06-22 | 1990-02-16 | Boc Group Inc:The | Formation of an oxide coating by reactive-sputtering |
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