JPS6144732A - Glass for substrate - Google Patents

Glass for substrate

Info

Publication number
JPS6144732A
JPS6144732A JP16441284A JP16441284A JPS6144732A JP S6144732 A JPS6144732 A JP S6144732A JP 16441284 A JP16441284 A JP 16441284A JP 16441284 A JP16441284 A JP 16441284A JP S6144732 A JPS6144732 A JP S6144732A
Authority
JP
Japan
Prior art keywords
glass
mol
substrate
zro2
heat resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16441284A
Other languages
Japanese (ja)
Other versions
JPH0372022B2 (en
Inventor
Masaru Shinpo
新保 優
Kiyoshi Fukuda
潔 福田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP16441284A priority Critical patent/JPS6144732A/en
Publication of JPS6144732A publication Critical patent/JPS6144732A/en
Publication of JPH0372022B2 publication Critical patent/JPH0372022B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00Glass compositions
    • C03C3/04Glass compositions containing silica
    • C03C3/076Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/083Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
    • C03C3/085Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
    • C03C3/087Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal containing calcium oxide, e.g. common sheet or container glass

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Glass Compositions (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To aim improvement in heat resistance, chemical resistance, and mass productivity, by blending SiO2 with Al2O3, ZrO2, MgO, PbO, ZnO, B2O3, etc. in a specific ratio. CONSTITUTION:Glass for substrate comprising 45-60mol% SiO2, 20-35mol% Al2O3, 1-5mol% ZrO2, 10-25mol% MgO, 2-10mol% RO (R is one or more of Ca, Ba, and Sr), 4X10<-4>-4X10<-3>mol% R'O (R' is As and/or Sb), at least one of 0.05-5mol% PbO, 0.5-5mol% ZnO, and 0.5-3mol% B2O3, and 70-86mol% SiO2+Al2O3+ZrO2. The glass has improved heated resistance, and good chemical resistance and is melted uniformly at <=1,600 deg.C.

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は半導体、金属等の各種の膜形成がなされる基板
に用いるガラスに関する。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a glass used for a substrate on which various films such as semiconductors and metals are formed.

〔発明の技術的背景とその問題点〕[Technical background of the invention and its problems]

各種の半導体、金属1M電体の薄膜は現在、電子部品の
ほとんどあらゆる分野に使われている。
Various semiconductor and metal 1M electric thin films are currently used in almost every field of electronic components.

これら簿膜は適当な基板に加熱蒸着、スパッタリングな
どの物理的方法や熱分解、光分解などの化学的方法で形
成される。こうした薄膜をオプトエレクトロニクスやデ
ィスプレイなどに使用する場合、基板は透明であること
が必要であり、安価。
These films are formed on a suitable substrate by a physical method such as heated vapor deposition or sputtering, or a chemical method such as thermal decomposition or photolysis. When such thin films are used in optoelectronics or displays, the substrate must be transparent and inexpensive.

入手が簡単などの理由からガラス基板が多用されている
Glass substrates are often used because they are easily available.

ところで、基板用ガラスは薄膜素子の厳しい要求に対応
して以下に示す高度な特性が必要となってきている。
Incidentally, glass for substrates is required to have the following advanced characteristics in response to the strict requirements of thin film devices.

■ アルカリを含まないこと。基板ガラス中にアルカリ
が含まれていると、そのイオンが形成した薄膜中に拡散
して特性を劣化させる。      ′■ 耐熱性が高
いこと。基板上に結晶が良好で特性の優れた薄膜を形成
するには高い蒸着温度で行うことが必要である。また、
高温での熱処理工程を行う場合もある。しかるに、現在
、入手できる基板用ガラスの耐熱性は500〜600℃
が限界であり、例えばシリコン薄膜トランジスタのよう
に800℃程度の熱処理を必要とするものには不適当で
ある。
■ Must not contain alkali. If the substrate glass contains alkali, its ions will diffuse into the formed thin film and deteriorate its properties. ′■ High heat resistance. In order to form a thin film with good crystallization and excellent properties on a substrate, it is necessary to perform the deposition at a high temperature. Also,
A heat treatment process at high temperature may also be performed. However, currently available glass for substrates has a heat resistance of 500 to 600°C.
is the limit, and is not suitable for devices that require heat treatment at about 800° C., such as silicon thin film transistors, for example.

■ 耐薬品性に優れていること。基板上に形成された薄
膜はフォトリソグラフィなどの手段でエツチングされて
目的とする素子に作られるが、このパターニング工程で
は強酸やアルカリなどの腐蝕性の高い薬品が使われ、こ
の時基板自体が腐蝕(エツチング)されてはならない。
■ Excellent chemical resistance. The thin film formed on the substrate is etched using methods such as photolithography to create the desired device, but highly corrosive chemicals such as strong acids and alkalis are used in this patterning process, and at this time the substrate itself is corroded. (etched) must not be done.

上述した種々の要求を満たすガラスとしては、従来より
石英ガラスかが知られている。しかしながら、石英ガラ
スは特殊な製法を必要とするため、極めて高価である。
Quartz glass is conventionally known as a glass that satisfies the various requirements mentioned above. However, quartz glass requires a special manufacturing method and is therefore extremely expensive.

また、低熱膨張という特性を有するが、例えば異種材料
との接合や封着を必要とするデバイスの場合は欠点にな
り易い。
In addition, although it has the characteristic of low thermal expansion, it tends to be a drawback in devices that require bonding or sealing with different materials, for example.

高耐熱性ガラスの公知例として、たとえば特開昭56−
54252号公報のアルミノ硅酸塩ガラス組成及び特開
昭56−169148号公報のRO−zno−Al10
3−8 i 02系組成などがある。しかしながらこれ
ら公知例においても、耐熱性の目安であるガラス転移温
度(TQ)は高々700℃であり、800℃を越えるも
のはない。
As a well-known example of highly heat-resistant glass, for example, JP-A-56-
Aluminosilicate glass composition of No. 54252 and RO-zno-Al10 of JP-A-56-169148
There are 3-8 i 02 type compositions. However, even in these known examples, the glass transition temperature (TQ), which is a measure of heat resistance, is at most 700°C, and none exceeds 800°C.

〔発明の目的〕[Purpose of the invention]

本発明は耐熱性、耐薬品性が共に優れた、量産的な無ア
ルカリの基板用ガラスを提供するものである。
The present invention provides a mass-produced alkali-free glass for substrates that has excellent heat resistance and chemical resistance.

〔発明の概要〕[Summary of the invention]

本発明は5iO245〜60モル%、八β○y20〜3
5モル%、ZrO21〜5モル%。
The present invention is 5iO245-60 mol%, 8β○y20-3
5 mol%, ZrO21-5 mol%.

MQ010〜25モル%、RO(但しRはCa。MQ010-25 mol%, RO (where R is Ca.

Ba、Srのうちの少なくとも一種)2〜10モル%、
R’O,/ (但しR′はAs、、Sbうちの少なくと
も一種)4X104〜4X10−3モル%及び0.5〜
5モル%のPbO,ZnO又はBOの少なくとも一種を
含むものである。なお、スは高アルミナ質のアルカリ土
類−アルミノシリケートに属し、ZrO2の配合により
耐熱性と耐薬品性の向上がなされ、更にAS203゜3
b203の少なくとも一種の配合により脱泡清澄化がな
される。ざらに015〜5モル%のPbO,ZnO又は
B20ヨを加える事により、耐熱性や耐薬品性を損わず
に溶融性を向上させ、脱泡をより容易にする事ができる
at least one of Ba and Sr) 2 to 10 mol%,
R'O,/ (where R' is at least one of As, Sb) 4X104 to 4X10-3 mol% and 0.5 to
It contains 5 mol% of at least one of PbO, ZnO, or BO. In addition, S belongs to high alumina alkaline earth-aluminosilicate, and its heat resistance and chemical resistance are improved by adding ZrO2, and it also has AS203゜3.
Defoaming and clarification is achieved by blending at least one type of b203. By adding 0.15 to 5 mol % of PbO, ZnO, or B20, melting properties can be improved without impairing heat resistance or chemical resistance, and defoaming can be made easier.

次に、上記各成分の作用及びその配合割合の限定理由に
ついて説明する。
Next, the effects of each of the above-mentioned components and the reasons for limiting their blending ratios will be explained.

(I)SiO2 S i 02はガラスの主成分をなずものである。(I)SiO2 S i02 is a natural glass material.

3 i Q 2の配合割合を45モル%未満にすると耐
薬品性が低下し、例えば濃塩酸を水で1=1の割合で希
釈した希塩酸中で煮沸すると、表面が曇る。
When the blending ratio of 3 i Q 2 is less than 45 mol %, chemical resistance decreases, and for example, when concentrated hydrochloric acid is boiled in diluted hydrochloric acid diluted with water at a ratio of 1:1, the surface becomes cloudy.

一方、SiO2が60モル%を越えると、高温粘性が顕
著に増加し、1600℃以下で溶融できなくなり、生産
上の障害となる。
On the other hand, if SiO2 exceeds 60 mol%, the high-temperature viscosity increases markedly, making it impossible to melt at temperatures below 1600° C., which poses a problem in production.

(II)AβOB A (l OM  もガラスの主成分をなすものである
(II) AβOB A (l OM is also a main component of glass.

ガラスの粘性が高くなり、脱泡が事実上不可能ときなく
なる。
The glass becomes so viscous that defoaming becomes virtually impossible.

(I[[)Zr02 ZrO2はガラスの耐熱性の向上に寄与する。(I[[)Zr02 ZrO2 contributes to improving the heat resistance of glass.

例えばS i 02−AflOy   MQO−CaO
系ガラス及びこれにZn0(Ilf化亜鉛亜鉛どを加え
た低膨張、耐熱性のガラスは公知であるが、実用的な組
成範囲ではガラス転移温度(Tg)が800℃に達しな
い。しかし、上記成分系にZrO2を添加することで、
ガラスの溶融性を損わずにTc+を800℃以上にする
ことができた。
For example, S i 02-AflOy MQO-CaO
Low-expansion, heat-resistant glasses made by adding ZnO (zinc Ilf), etc. to these glasses are known, but the glass transition temperature (Tg) does not reach 800°C in a practical composition range.However, the above-mentioned By adding ZrO2 to the component system,
It was possible to raise Tc+ to 800° C. or higher without impairing the meltability of the glass.

また、ZrO2は耐薬品性の向上にも寄与する。ZrO2 also contributes to improving chemical resistance.

こうしたZrO2の配合割合を1モル%未満にすると、
その効果を充分に達成できず、かといって5モル%をを
越えると、ガラスが失透し易くなる。
When the blending ratio of ZrO2 is less than 1 mol%,
If this effect cannot be fully achieved, and on the other hand, the amount exceeds 5 mol %, the glass tends to devitrify.

(IV)MgO MQOは耐熱性等の向上の点で重要な成分である。MQ
Oの配合割合を10モル%未満にすると、その効果を充
分に発揮できず、かといって25モル%を越えると、ガ
ラスが失透し易くなる。
(IV) MgO MQO is an important component in terms of improving heat resistance and the like. MQ
If the blending ratio of O is less than 10 mol %, the effect cannot be fully exhibited, whereas if it exceeds 25 mol %, the glass tends to devitrify.

(V)RO ROはCab、Bad、S i 02のうちの少なくと
も一種からなるもので、MQOの補助成分であり、溶融
性の向上に寄与する。均質かつ安定なガラスを得るには
これら成分を2モル%以上配合することが必要であり、
かといってその量が10モル%を越えると、ガラスの耐
熱性が劣りTp=800℃以上にならなくなる。なお、
ROととして特にCaOは上記特性の向上の点で最も有
益である。
(V)RO RO is composed of at least one of Cab, Bad, and S i 02, is an auxiliary component of MQO, and contributes to improving meltability. In order to obtain a homogeneous and stable glass, it is necessary to mix 2 mol% or more of these components,
On the other hand, if the amount exceeds 10 mol %, the heat resistance of the glass will be poor and Tp will not reach 800° C. or higher. In addition,
CaO, in particular, is most useful as RO in terms of improving the above properties.

(Vl)R’  Oy 少なくとも一種からなり、これらの配合割合は脱泡、清
澄により均質なガラスを得る上で4×10−’〜4X1
0’モル%の範囲にすることが必要である。
(Vl) R' Oy consists of at least one kind, and the blending ratio of these is 4 x 10-' to 4 x 1 in order to obtain a homogeneous glass by defoaming and clarification.
It is necessary to keep it in the range of 0'mol%.

(旧ZnO,P bO9Boy これらの成分は、ガラスの溶解温度を下げ、脱泡を容易
にする成分である。その効果は0.5モル%以上で顕著
になるが、5モル%を越えると耐熱性を低下させ、本発
明の目的からはずれてしまう。
(Former ZnO, P bO9Boy These components lower the melting temperature of glass and facilitate defoaming.The effect becomes noticeable when it exceeds 0.5 mol%, but when it exceeds 5 mol%, the heat resistance decreases. This results in a loss of performance and defeats the purpose of the present invention.

本発明にかかるガラスにおいて、充分な耐熱性を得ルタ
メニハ、S i O2+ A (l Oy  +ZrO
2の和が重要である。この和は少なくとも70モル%以
上を占める必要がある。しかしながら一方、この和が大
きすぎると、ガラスの溶融温度が高くなり、均質化がき
わめて困難になる。その限界は86モル%程度の所にあ
る。
In the glass according to the present invention, sufficient heat resistance can be obtained by combining Rutameniha, S i O2+ A (l Oy + ZrO
The sum of two is important. This sum must account for at least 70 mol%. However, if this sum is too large, the melting temperature of the glass will increase, making homogenization extremely difficult. The limit is about 86 mol%.

なお、前述した各種の酸化物は通常のガラス原料をその
まま使用できる。即ち、精製珪砂、水酸化アルミニウム
、マグネシア、ジルコニア、炭酸カルシウム、炭酸バリ
ウム、亜鉛華、鉛丹、ホウ酸などを目標組成に調合し、
電気炉などで溶融。
Note that ordinary glass raw materials can be used as they are for the various oxides mentioned above. That is, refined silica sand, aluminum hydroxide, magnesia, zirconia, calcium carbonate, barium carbonate, zinc white, red lead, boric acid, etc. are mixed to a target composition,
Melt in an electric furnace, etc.

均質化させる。亜砒酸、酸化アンチモンなどの消。Homogenize. Eliminates arsenous acid, antimony oxide, etc.

泡剤を使う場合は、常法どおり成分の一部を硝酸塩の形
で用い、酸化性にする。こうして得られたガラスはロー
ル法、プレス法などで成形し、研磨して基板用ガラスと
する。
When using foaming agents, some of the ingredients are conventionally used in the form of nitrates, making them oxidizing. The glass thus obtained is formed by a roll method, a press method, etc., and polished to obtain a substrate glass.

〔発明の効果〕〔Effect of the invention〕

本発明によれば、Tgが800℃以上と耐熱性にすぐれ
、かつ耐薬品性も良好で、更に1600℃以下で均質に
溶解でき、半導体、金属、誘電体等の薄膜の蒸着に適し
た安価で高性能の基板用ガラスを提供できる。
According to the present invention, it has excellent heat resistance with a Tg of 800°C or higher, good chemical resistance, can be homogeneously melted at 1600°C or lower, and is inexpensive and suitable for vapor deposition of thin films of semiconductors, metals, dielectrics, etc. We can provide high-performance glass for substrates.

〔発明の実施例〕[Embodiments of the invention]

次に本発明の詳細な説明する。 Next, the present invention will be explained in detail.

まず、精製珪砂、水酸化アルミニウム、酸化ジルコニウ
ム、酸化マグネシウム、硝酸マグネシウム、炭酸カルシ
ウム、炭酸ストロンチウム、炭酸バリウム、亜砒酸、三
酸化アンチモン、亜鉛華。
First, refined silica sand, aluminum hydroxide, zirconium oxide, magnesium oxide, magnesium nitrate, calcium carbonate, strontium carbonate, barium carbonate, arsenous acid, antimony trioxide, and zinc white.

亜丹及びホウ酸を原料とし、これらを調合して下記第1
表に示す試料N011〜10の組成のガラスを作った。
Using nitrous oxide and boric acid as raw materials, mix these and make the following 1st
Glasses having the compositions of samples Nos. 011 to 10 shown in the table were made.

なお、A320Bは低濃度であるため、これらを除いた
酸化物の総量を100とし、これに添加しである。得ら
れたガラスの量は夫々的2Kgで、これらを白金ルツボ
に収容し、酸素−都市ガス炉で1450〜1550℃で
溶解した。脱泡に要した時間は約6時間である。つづい
て、ガラスを鉄板上でプレスして約100aφの円板と
し、850℃から徐冷した。
Note that since A320B has a low concentration, the total amount of oxides excluding these is set to 100 and is added to this. The amount of each glass obtained was 2 kg, which was placed in a platinum crucible and melted at 1450 to 1550°C in an oxygen-city gas furnace. The time required for defoaming was about 6 hours. Subsequently, the glass was pressed on an iron plate to form a disk of about 100 aφ, and slowly cooled from 850°C.

得られた10種の円板ガラスについて熱膨張率。Thermal expansion coefficients of the 10 types of disc glasses obtained.

ガラス転移点、屈伏温度、及び耐薬品性を調べた。The glass transition point, yield temperature, and chemical resistance were investigated.

その結果を第2表に示した。なお、熱膨張率は円板ガラ
スを一部切り取り、干渉膨張計により測定した。また、
耐薬品性は表面を研磨、した円板ガラスをコンク塩酸を
水で1=1となるように希釈した希塩酸中で2時間沸騰
し、表面の変質を観察することにより評価した。また、
溶融性及び脱泡性については得られたガラス板中の残留
泡や脈理の観察から判断した。
The results are shown in Table 2. Note that the coefficient of thermal expansion was measured by cutting out a portion of the disk glass and using an interference dilatometer. Also,
Chemical resistance was evaluated by boiling a disk glass whose surface had been polished in dilute hydrochloric acid prepared by diluting conch hydrochloric acid with water at a ratio of 1=1 for 2 hours, and observing the deterioration of the surface. Also,
Meltability and defoaming properties were determined from observation of residual bubbles and striae in the obtained glass plate.

上記第2表から明らかな如く、本発明のガラスはいずれ
も耐熱性の目安であるガラス転移温度が800℃以上で
あり、かつ耐薬品性も充分であることがわかる。
As is clear from Table 2 above, all the glasses of the present invention have a glass transition temperature of 800° C. or higher, which is a measure of heat resistance, and also have sufficient chemical resistance.

また、得られた各ガラスを100sφX 1 mmtの
大きさに研磨し、化学蒸着法によりシリコン薄膜を形成
した。この時、基板(ガラス)湿度を800℃にして蒸
着したが、基板の変質もなく、その上にμmオーダの結
晶粒からなる良好な電気特性を有するシリコン薄膜を形
成できた。
Further, each of the obtained glasses was polished to a size of 100 sφX 1 mmt, and a silicon thin film was formed by chemical vapor deposition. At this time, vapor deposition was carried out at a substrate (glass) humidity of 800° C., but there was no deterioration of the substrate, and a silicon thin film having good electrical properties consisting of crystal grains on the order of μm could be formed thereon.

出願人代理人 弁理士 鈴江武彦 手続補正書 rsm  !”−188 特許庁長官 宇 賀 道 部 殿 1、事件の表示 特願昭59−164412号 2、発明の名称 基板用ガラス 3、補正をする者 事件との関係 特許出願人 (307)株式会社 東芝 4、代理人 東京都港区虎ノ門1丁目26番5号 第17森ビル7、
補正の内容 (1) 特許請求の範囲を別紙の通り訂正する。
Applicant's agent Patent attorney Takehiko Suzue Procedural amendment RSM! ”-188 Michibe Uga, Commissioner of the Japan Patent Office 1, Indication of the case, Patent Application No. 1983-164412 2, Title of the invention: Glass for substrates 3, Person making the amendment Relationship with the case Patent applicant (307) Toshiba Corporation 4. Agent No. 17 Mori Building 7, 1-26-5 Toranomon, Minato-ku, Tokyo.
Contents of amendment (1) The scope of claims is amended as shown in the attached sheet.

(2) 明細書第5頁第1行の「015〜5モル%」を
「0.5〜5モル%」と訂正する。
(2) "015-5 mol%" in the first line of page 5 of the specification is corrected to "0.5-5 mol%."

(3) 同第7頁第19行〜20行の[5モル%を超え
ると耐熱性を低下させ、」をrZno。
(3) rZno on page 7, lines 19 and 20, "If it exceeds 5 mol%, the heat resistance decreases."

PbOについては5モル%を超えると耐熱性を低下させ
、BO3/2  については3モル%を超えると脈理が
多くなって不均質になり、」と訂正する。
For PbO, if it exceeds 5 mol%, the heat resistance will decrease, and for BO3/2, if it exceeds 3 mol%, striae will increase and the material will become heterogeneous.''

2、特許請求の範囲 S i 0245〜60 モル%、 A 1037□2
0〜35モル%、Zr021〜5モル%、MO010〜
25モル%、RO(但しRはCa、Ba、Srのうちの
少なくとも一種)2〜10モル%。
2. Claims S i 0245-60 mol%, A 1037□2
0-35 mol%, Zr021-5 mol%, MO010-
25 mol%, RO (where R is at least one of Ca, Ba, and Sr) 2 to 10 mol%.

R−03/2(但しR′はAS、3bのうちの少なくと
も一種)4X10−’〜4X10−3モル%。
R-03/2 (where R' is at least one of AS and 3b) 4X10-' to 4X10-3 mol%.

1L笈弘111含み、S i 02 +AffiOH+
ZrO2の和が、70〜86モル%の範囲にある基板用
ガラス。
Contains 1L Ohiro 111, S i 02 +AffiOH+
A glass for a substrate in which the sum of ZrO2 is in the range of 70 to 86 mol%.

Claims (1)

【特許請求の範囲】[Claims] SiO_245〜60モル%、AlO_3_/_220
〜35モル%、ZrO_21〜5モル%、MgO10〜
25モル%、RO(但しRはCa、Ba、Srのうちの
少なくとも一種)2〜10モル%、R′O_3_/_2
(但しR′はAs、Sbうちの少なくとも一種)4×1
0^−^4〜4×10^−^3モル%及び0.5〜5モ
ル%のPbO、ZnO又はBO_3_/_2の少なくと
も一種を含み、SiO_2+AlO_3_/_2+Zr
O_2の和が、70〜86モル%の範囲にある基板用ガ
ラス。
SiO_245-60 mol%, AlO_3_/_220
~35 mol%, ZrO_21~5 mol%, MgO10~
25 mol%, RO (where R is at least one of Ca, Ba, and Sr) 2 to 10 mol%, R'O_3_/_2
(However, R' is at least one of As and Sb) 4×1
0^-^4~4x10^-^3 mol% and 0.5~5 mol% of at least one of PbO, ZnO or BO_3_/_2, SiO_2+AlO_3_/_2+Zr
A glass for substrates in which the sum of O_2 is in the range of 70 to 86 mol%.
JP16441284A 1984-08-06 1984-08-06 Glass for substrate Granted JPS6144732A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16441284A JPS6144732A (en) 1984-08-06 1984-08-06 Glass for substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16441284A JPS6144732A (en) 1984-08-06 1984-08-06 Glass for substrate

Publications (2)

Publication Number Publication Date
JPS6144732A true JPS6144732A (en) 1986-03-04
JPH0372022B2 JPH0372022B2 (en) 1991-11-15

Family

ID=15792647

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16441284A Granted JPS6144732A (en) 1984-08-06 1984-08-06 Glass for substrate

Country Status (1)

Country Link
JP (1) JPS6144732A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1081540A (en) * 1996-09-04 1998-03-31 Hoya Corp Material for base of information recording medium, base for information recording medium made of the material, magnetic disk and its production
JPH11116267A (en) * 1996-09-04 1999-04-27 Hoya Corp Glass having high modulus of specific elasticity
JPWO2016159344A1 (en) * 2015-04-03 2018-02-01 日本電気硝子株式会社 Glass

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1081540A (en) * 1996-09-04 1998-03-31 Hoya Corp Material for base of information recording medium, base for information recording medium made of the material, magnetic disk and its production
JPH11116267A (en) * 1996-09-04 1999-04-27 Hoya Corp Glass having high modulus of specific elasticity
JPWO2016159344A1 (en) * 2015-04-03 2018-02-01 日本電気硝子株式会社 Glass
US11261123B2 (en) 2015-04-03 2022-03-01 Nippon Electric Glass Co., Ltd. Glass

Also Published As

Publication number Publication date
JPH0372022B2 (en) 1991-11-15

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